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Semiconductor device manufacturing: process April category listing, related patent applications 04/11

20110097821 - Method for tunably repairing low-k dielectric damage: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)x(OR′)y, where y≧1... Agent: Lam Research Corporation

20110097823 - Apparatus for forming thin film and method of manufacturing semiconductor film: An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes... Agent: Mitsubishi Electric Corporation

20110097822 - Fabrication method of semiconductor device with uniform topology: A method of manufacturing a semiconductor device to have uniform topology includes forming an interlayer insulating layer on a semiconductor device, carrying out an ion implantation process by varying an amount of ion-implantation according to a height profile of the interlayer insulating layer, and planarizing the interlayer insulating layer.... Agent: Hynix Semiconductor Inc.

20110097824 - Method of creating an extremely thin semiconductor-on- insulator (etsoi) layer having a uniform thickness: A method for creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness includes: measuring a thickness of a semiconductor-on-insulator (SOI) layer at a plurality of locations; determining a removal thickness at each of the plurality of locations; and implanting ions at the plurality of locations. The implanting is... Agent: International Business Machines Corporation

20110097825 - Methods for reducing recrystallization time for a phase change material: A method for reducing recrystallization time for a phase change material of a memory cell element in conjunction with the manufacture of a memory cell device can be carried out as follows. A phase change material, a buffer layer material and a cladding layer material are selected. The buffer layer... Agent: International Business Machines Corporation

20110097826 - Device and method for detecting stress migration properties: A device and method are provided for detecting stress migration properties of a semiconductor module mounted in a housing. A stress migration test (SMT) structure is formed in the semiconductor module. An integrated heating (IH) device is formed within or in direct proximity to the SMT structure. The SMT structure... Agent: Infineon Technologies Ag

20110097828 - Method for fabricating semiconductor device: A method of manufacturing a semiconductor device, includes providing a mark above a main surface on a semiconductor substrate, separating the semiconductor substrate into a plurality of semiconductor elements by cutting the semiconductor substrate, determining a reference semiconductor element on the basis of a coordinate data indicating coordinates of the... Agent: Fujitsu Semiconductor Limited

20110097829 - Method for inspection of defects on a substrate: A method for inspection of defects on a substrate includes positioning a probe of a scanning probe microscopy (SPM) over and spaced apart from a substrate, includes scanning the substrate by changing a relative position of the probe with respect to the substrate on a plane spaced apart from and... Agent:

20110097827 - Pattern formation method and a method for manufacturing a semiconductor device: In one embodiment, a pattern formation method is disclosed. The method can place a liquid resin material on a workpiece substrate. The method can press a template against the resin material and measuring distance between a lower surface of a projection of the template and an upper surface of the... Agent:

20110097830 - Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same: In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110097833 - Light source including a wavelenght-convereted semiconductor light emitting device and a filter: A semiconductor light emitting device comprises a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer is adapted to emit first light having a first peak wavelength. A first wavelength converting material is adapted to absorb the first light and emit second light... Agent: Philips Lumileds Lighting Company, LLC

20110097832 - Method for fabricating led device: An LED device has a substrate, an N-type semiconductor layer formed on the substrate, a light-emitting layer on the N-type semiconductor layer, a P-type semiconductor layer on the light-emitting layer and a transparent electrode layer formed on the P-type semiconductor layer. A top surface of the transparent electrode layer is... Agent: He Shan Lide Electronic Enterprise Company Ltd.

20110097831 - Method of manufacturing a vertical type light-emitting diode: In a method of manufacturing a vertical type light-emitting diode, a multilayered structure of group III nitride semiconductor compounds is epitaxy deposited on an irregular surface of a substrate. The substrate is then removed to expose an irregular surface of the multilayered structure corresponding to the irregular surface of the... Agent: Tekcore Co., Ltd.

20110097834 - Thin film transistor, display device and liquid crystal display device and method for manufacturing the same: As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110097836 - Array substrate, method of manufacturing the same, and method of repairing line in the same: An array substrate includes a substrate, a gate line on the substrate, a data line crossing the gate line to define a pixel region, a thin film transistor connected to the gate and data lines, a pixel electrode in the pixel region, and a common electrode including first, second, third,... Agent:

20110097835 - Photoresist composition and method of manufacturing a display substrate using the same: A photoresist composition includes an alkali-soluble resin, a dissolution inhibitor including a quinone diazide compound, a first additive including a benzenol compound represented by the following Chemical Formula 1, a second additive including an acrylic copolymer represented by the following Chemical Formula 2 and an organic solvent. Accordingly, heat resistance... Agent: Dongwoo Fine-chem

20110097837 - Gan-based nitric oxide sensors and methods of making and using the same: GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of... Agent:

20110097838 - Photoelectric conversion apparatus, producing method therefor, image pickup module and image pickup system: A photoelectric conversion apparatus has a plurality of photoelectric conversion elements arranged on a semiconductor substrate, a plurality of wiring layers arranged on the semiconductor substrate through the first and second insulation layers, and a high refractive index region which is arranged in an opening part that is arranged in... Agent: Canon Kabushiki Kaisha

20110097839 - Photoelectric conversion device, imaging device, and process for producing the photoelectric conversion device: A photoelectric conversion device comprising: a semiconductor substrate; an inorganic photoelectric conversion layer provided within the semiconductor substrate; and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion layer, wherein the organic photoelectric conversion layer is prepared by a shadow mask method.... Agent: Fujifilm Corporation

20110097840 - Reducing surface recombination and enhancing light trapping in solar cells: Methods of improving the anti-reflection properties of one or more dielectric layers and reducing surface recombination of generated carriers of a solar cell are disclosed. In some embodiments, dopants are introduced into the dielectric layers to improve their anti-reflection properties. In other embodiments, species are introduced into the dielectric layers... Agent: Varian Semiconductor Equipment Associates, Inc.

20110097841 - Rear electrode structure for use in photovoltaic device such as cigs/cis photovoltaic device and method of making same: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting... Agent: Guardian Industries Corp.

20110097843 - Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof: A ferroelectric layer (104) is sandwiched between a lower electrode layer (103) and an upper electrode (105). When a predetermined voltage (DC or pulse) is applied between the lower electrode layer (103) and the upper electrode (105) to change the resistance value of the ferroelectric layer (104) to switch a... Agent:

20110097842 - Method for preparing igzo particles and method for preparing igzo film by using the igzo particles: A method for preparing IGZO particles and a method for preparing an IGZO thin film by using the IGZO particles are disclosed. The method for preparing the IGZO particles comprises the following steps: (A) providing a solution of metal acid salts, which contains a zinc salt, an indium salt, and... Agent: National Tsing Hua University

20110097844 - Method of fabricating a thin-film device: A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface... Agent: Nec Lcd Technologies, Ltd.

20110097845 - Method and apparatus for packaging circuit devices: A hermetically sealed package includes a lid (14) hermetically bonded to a wafer or substrate (12), with a chamber therebetween defined by a recess (16) in the lid. A circuit device (26) such as MEMS device is provided within the chamber on the substrate. A plurality of vias (41-46) are... Agent: Raytheon Company

20110097849 - Manufacturing method for semiconductor integrated device: In a chip pick-up process after dicing in an assembly process during manufacture of a semiconductor integrated circuit device it is an important subject to diminish a pick-up defect caused by the reduction in thickness of each chip which is proceeding in quick tempo. Particularly, bending of the chip peripheral... Agent: Renesas Electronics Corporation

20110097848 - Method for connecting a die assembly to a substrate in an integrated circuit and a semiconductor device comprising a die assembly: A semiconductor device includes a substrate, a die assembly attachable to the substrate and a flexible strip extending over the substrate and the die assembly. The flexible strip has one or more routing circuits carried thereon. The die assembly and the substrate are arranged to be electrically connected through the... Agent:

20110097847 - Microelectronic devices and methods for manufacturing microelectronic devices: Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. In one embodiment, a microelectronic device includes a microelectronic die, a plurality of electrical couplers projecting from the die, and a flowable material disposed on the die. The die includes an integrated circuit and a plurality of terminals operably... Agent: Micron Technology, Inc.

20110097846 - Semiconductor chip, wafer stack package using the same, and methods of manufacturing the same: A semiconductor chip comprises a substrate including a front surface and a rear surface, the substrate having a first via hole formed in the front surface and a second via hole formed in the rear surface, a first conductive plug formed on the substrate, the first conductive plug including a... Agent:

20110097851 - Method of fabricating a package structure: A method fabricates a packaging structure, including cutting a complete panel of packaging substrates with a large area into a plurality of packaging substrate blocks each having a plurality of packaging substrate units; mounting a semiconductor chip on each of the packaging substrate units and securing the semiconductor chip to... Agent: Unimicron Technology Corporation

20110097850 - Method of fabricating a packaging structure: A method of fabricating a packaging structure includes cutting a panel of packaging substrate into a plurality of packaging substrate blocks each having a plurality of packaging substrate units; mounting and packaging a semiconductor chip on each of the packaging substrate unit to form package blocks each having multiple packaging... Agent: Unimicron Technology Corporation

20110097852 - Wafer processing method without occurrence of damage to device area: A wafer processing method of processing a wafer having on a front surface a device area where a plurality of devices are formed by being sectioned by predetermined dividing lines, and an outer circumferential redundant area surrounding the device area, includes the steps of: sticking a protection tape to the... Agent: Disco Corporation

20110097853 - Via forming method and method of manufacturing multi-chip package using the same: A via forming method is provided. The via forming method includes: forming via-holes in a substrate; putting the substrate having the via-holes in a first solution to fill the via-holes with the first solution; sinking the metal particles into the via-holes by supplying a second solution containing metal particles to... Agent: Electronics And Telecommunications Research Institute

20110097854 - Method of manufacturing semiconductor device and method of manufacturing electronic device: Foreign matter formed over (or adhered to) a surface of a lead is reliably removed. A laser beam is applied to a residual resin (sealing body) which is formed in (or adhered to) a region surrounded by a sealing body (a first sealing body), a lead exposed (projected) from the... Agent: Renesas Electronics Corporation

20110097855 - Semiconductor device: A module including a carrier and a semiconductor chip applied to the carrier. An external contact element is provided having a first portion and a second portion extending perpendicular to the first portion, wherein a thickness of the second portion is smaller than a thickness of the carrier.... Agent: Infineon Technologies Ag

20110097856 - Method of manufacturing wafer level package: Disclosed is a method of manufacturing a wafer level package, which includes arranging semiconductor dies on a carrier, forming a protective layer between the semiconductor dies of the carrier through screen printing, primarily heat hardening the protective layer, simultaneously pressing and secondarily heat hardening the protective layer, and removing the... Agent:

20110097857 - Array substrate for liquid crystal display device and method of fabricating the same: An array substrate for a liquid crystal display device includes a gate line and a data line crossing each other on a substrate to define a pixel region, an insulating layer between the gate line and the data line, a gate electrode extending from the gate line, and a transistor... Agent:

20110097858 - Transition metal alloys for use as a gate electrode and devices incorporating these alloys: Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition... Agent:

20110097859 - Method of fabricating cmos transistor: A method of fabricating a CMOS transistor includes forming strained channels by re-crystallized amorphous polysilicon with the tensile film or the compressive film during annealing. C or Ge ions are optionally used to form solid-phase epitaxy to amplify the stress in the strained channel. Therefore, the charge carrier mobility in... Agent:

20110097860 - Method of manufacturing semiconductor device: The invention provides a method of manufacturing a semiconductor device having a MOS transistor, a resistor element, etc on one semiconductor substrate, in which the number of masks and the number of manufacturing steps are decreased. In an NMOS formation region, a channel stopper layer is formed in a P... Agent: Sanyo Semiconductor Co., Ltd.

20110097861 - Semiconductor device and manufacturing method thereof: An object of the invention is to reduce an area occupied by a capacitor in a circuit in a semiconductor device, and to downsize a semiconductor device on which the capacitor and an organic memory are mounted. The organic memory and the capacitor, included in a peripheral circuit, in which... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110097862 - Semiconductor memory device and method of fabrication of the same: A semiconductor memory device includes a first memory cell transistor. The first memory cell transistor includes a tunnel insulation film provided on a semiconductor substrate, a floating electrode provided on the tunnel insulation film, an inter-gate insulation film provided on the floating electrode, and a control electrode provided on the... Agent:

20110097863 - Cross od finfet patterning: A method of forming an integrated circuit structure includes providing a semiconductor substrate; providing a first lithography mask, a second lithography mask, and a third lithography mask; forming a first mask layer over the semiconductor substrate, wherein a pattern of the first mask layer is defined using the first lithography... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110097864 - Method of fabricating high-voltage semiconductor device: A method of fabricating a high-voltage semiconductor device includes the following steps: providing a semiconductor layer; forming a plurality of trenches in the semiconductor layer to define a plurality of pillars of a first conductivity type in the semiconductor layer between adjacent trenches, wherein the trenches extend from a top... Agent:

20110097865 - High voltage-resistant semiconductor device and method of manufacturing high voltage-resistant semiconductor device: High voltage-resistant semiconductor devices adapted to control threshold voltage by utilizing threshold voltage variation caused by plasma damage resulting from the formation of multilayer wiring, and a manufacturing method thereof. Exemplary high voltage-resistant semiconductor devices include a plurality of MOS transistors having gate insulating films not less than about 350... Agent:

20110097866 - Non-volatile memory cell and method of fabricating the same: A method of fabricating a non-volatile memory cell is disclosed. The method includes the steps of: forming two separate charge trapping structures on a semiconductor substrate; forming first spacers on sidewalls of the two charge trapping structures; forming a gate dielectric layer on the substrate; forming a gate on the... Agent:

20110097867 - Method of controlling gate thicknesses in forming fusi gates: A method of fabricating a semiconductor device is provided. In one embodiment, a gate structure is formed on a substrate, the gate structure having a gate dielectric layer and a first polysilicon layer formed above the gate dielectric layer. A passivation layer is formed above the first polysilicon layer. A... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110097868 - Method for fabricating p-channel field-effect transistor (fet): A method for fabrication a p-type channel FET includes forming a gate on a substrate. Then, a PAI ion implantation process is performed. Further, a pocket implantation process is conducted to form a pocket region. Thereafter, a first co-implantation process is performed to define a source/drain extension region depth profile.... Agent:

20110097869 - Semiconductor integrated circuit device having mim capacitor and method of fabricating the same: In a semiconductor integrated circuit device and a method of formation thereof, a semiconductor device comprises: a semiconductor substrate; an insulator at a top portion of the substrate, defining an insulator region; a conductive layer pattern on the substrate, the conductive layer pattern being patterned from a common conductive layer,... Agent: Samsung Electronics Co., Ltd.

20110097870 - Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep vias: A method of forming a high aspect ratio via opening through multiple dielectric layers, a high aspect ratio electrically conductive via, methods of forming three-dimension integrated circuits, and three-dimensional integrated circuits. The methods include forming a stack of at least four dielectric layers and etching the first and third dielectric... Agent: International Business Machines Corporation

20110097873 - Method for producing thin film: A method for producing a thin film includes the following steps: providing a primary substrate; forming an etching stop layer on the primary substrate; forming a sacrificial layer on the etching stop layer; implanting gas ions to form an ion implantation peak layer, which defines an effective transferred layer and... Agent: Tien-hsi Lee

20110097872 - Method of manufacturing soi substrate and method of manufacturing semiconductor device: A first substrate of single-crystal silicon within which is formed an embrittled layer and over a surface of which is formed a first insulating film is provided; a second insulating film is formed over a surface of a second substrate; at least one surface of either the first insulating film... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110097871 - Process for the transfer of a thin layer formed in a substrate with vacancy clusters: Methods for forming semiconductor structures comprising a layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect of defects, and resulting structures therefrom. For example, a semiconductor on insulator (SeOI) structure can be formed by a method comprising: —providing a donor substrate... Agent:

20110097874 - Progressive trimming method: The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer... Agent: S.o.i.tec Silicon On Insulator Technologies

20110097875 - Wafer processing method: A wafer processing method for dividing a wafer into individual devices along a plurality of crossing streets formed on the front side of the wafer, the individual devices being respectively formed in a plurality of regions partitioned by the streets. The wafer processing method includes the steps of attaching the... Agent: Disco Corporation

20110097878 - Chamber for pecvd: A method and apparatus for plasma processing of substrates in a substantially vertical orientation is described. Substrates are positioned on a carrier comprising at least two frames oriented substantially vertically. The carrier is disposed in a plasma chamber with an antenna structure positioned between the substrates. Multiple plasma chambers may... Agent: Applied Materials, Inc.

20110097876 - Chemical vapor deposition reactor having multiple inlets: A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion.... Agent:

20110097880 - Film deposition method: Provided is a film deposition method capable of improving the crystal characteristic near an interface according to the lattice constant of a material that will constitute a thin film to be deposited. Specifically, a substrate is curved relative to the direction along one main surface on which the thin film... Agent: Sumitomo Electric Industries, Ltd.

20110097877 - Method for manufacturing microcrystalline semiconductor and thin film transistor: A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper electrode, and the upper... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110097879 - Method of preparing luminescent nanocrystals, the resulting nanocrystals and uses thereof: The present invention comprises a method for preparing a nanocrystal having (i) a core comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the −III oxidation state, coated with (ii) a shell in which the outer portion comprises... Agent:

20110097881 - Method of forming mono-crystalline germanium or silicon germanium: A method is presented for forming mono-crystalline germanium or silicon germanium in a trench. In an embodiment, the method comprises providing a substrate comprising at least one active region that is adjacent to two insulating regions, forming in the active region a trench having a width of less than 100... Agent: Katholieke Universiteit Leuven, K.u. Leuven R&d

20110097882 - Isotopically-enriched boron-containing compounds, and methods of making and using same: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical... Agent: Advanced Technology Materials, Inc.

20110097883 - Reduction of sheet resistance of phosphorus implanted poly-silicon: There is a process for reducing the sheet resistance of phosphorus-implanted poly-silicon. In an example embodiment, there is an MOS transistor structure. The structure has a gate region, drain region and a source region. A method for reducing the sheet resistance of the gate region comprises depositing intrinsic amorphous silicon... Agent: Koninklijke Philips Electronics N.v.

20110097884 - Method to attain low defectivity fully silicided gates: A method of forming fully silicided (FUSI) gates in MOS transistors which is compatible with wet etch processes used in source/drain silicide formation is disclosed. The gate silicide formation step produces a top layer of metal rich silicide which is resistant to removal in wet etch processes. A blocking layer... Agent: Texas Instruments Incorporated

20110097885 - Mosfet using gate work function engineering for switching applications: This invention discloses a new MOSFET device. The MOSFET device has an improved operation characteristic achieved by manufacturing a MOSFET with a higher gate work function by implementing a P-doped gate in an N-MOSFET device. The P-type gate increases the threshold voltage and shifts the C-Vds characteristics. The reduced Cgd... Agent:

20110097886 - Semiconductor device with mushroom electrode and manufacture method thereof: A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom... Agent: Fujitsu Quantum Devices Limited

20110097888 - Semiconductor memory device and method of manufacturing the same: A semiconductor memory device comprises a plurality of transistors having a stacked-gate structure. Each transistor includes a semiconductor substrate, a gate insulator formed on the semiconductor substrate, a lower gate formed on the semiconductor substrate with the gate insulator interposed, an intergate insulator formed on the lower gate, and an... Agent: Kabushiki Kaisha Toshiba

20110097887 - Semiconductor storage device and method for manufacturing the same: A semiconductor storage device has a plurality of word lines formed with a predetermined interval on a semiconductor substrate, a selection transistor provided at an end portion of the plurality of word lines, a first insulating film formed so as to cover side surfaces of the word lines, a side... Agent: Kabushiki Kaisha Toshiba

20110097889 - Sti shape near fin bottom of si fin in bulk finfet: A method of forming an integrated circuit structure includes providing a semiconductor substrate including a top surface; forming a first insulation region and a second insulation region in the semiconductor substrate; and recessing the first insulation region and the second insulation region. Top surfaces of remaining portions of the first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110097890 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device according to an embodiment includes: forming a precursor film containing therein a predetermined metallic element on a surface of a recess portion formed in an insulating film on a semiconductor substrate; forming a wiring formation film on the precursor film; performing a heat... Agent: Kabushiki Kaisha Toshiba

20110097893 - Integrated circuit having stress tuning layer and methods of manufacturing same: Warpage and breakage of integrated circuit substrates is reduced by compensating for the stress imposed on the substrate by thin films formed on a surface of the substrate. Particularly advantageous for substrates having a thickness substantially less than about 150 μm, a stress-tuning layer is formed on a surface of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110097891 - Method of manufacturing the semiconductor device: A method of manufacturing semiconductor device includes preparing a substrate having a first surface and a second surface opposite to the first surface. A first insulation layer is formed on the second surface. A sacrificial layer is formed on the first insulation layer. An opening is formed to penetrate through... Agent:

20110097892 - Sprocket opening alignment process and apparatus for multilayer solder decal: A process for aligning at least two layers in an abutting relationship with each other comprises forming a plurality of sprocket openings in each of the layers for receiving a sprocket of diminishing diameters as the sprocket extends outwardly from a base, with the center axes of the sprocket openings... Agent: International Business Machines Corporation

20110097894 - Method of forming a topside contact to a backside terminal of a semiconductor device: A process for forming a vertically conducting semiconductor device includes providing a semiconductor substrate having a topside surface and a backside surface. The semiconductor substrate serves as a terminal of the vertically conducting device for biasing the vertically conducting device during operation. The process also includes forming an epitaxial layer... Agent:

20110097895 - Semiconductor devices including interlayer conductive contacts and methods of forming the same: In a semiconductor device and a method of forming the same, the semiconductor device comprises: a first insulating layer on an underlying contact region of the semiconductor device, the first insulating layer having an upper surface; a first conductive pattern in a first opening through the first insulating layer, an... Agent: Samsung Electronics Co., Ltd.

20110097896 - Method for fabrication of in-laid metal interconnects: The present invention relates to a method for fabrication of in-laid metal interconnects. The method comprises the steps of providing a substrate with a dielectric material (1) on top thereof, depositing a protection layer (2) on top of the dielectric material, depositing a sacrificial layer (7) on top of the... Agent: Koninklijke Philips Electronics N.v.

20110097897 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device, including: forming a barrier seed Ti layer covering a recess in an insulating film; forming a first barrier TiN layer by sputtering; forming a second barrier TiN layer by sputtering with a substrate bias power higher than that in forming the first barrier... Agent: Elpida Memory, Inc

20110097898 - Improved method for degassing cables: The present invention is a method for degassing an electrical cable having a crosslinked, semiconductive shield layer prepared from a composition made from or containing (i) a phase I material consisting essentially of a polar copolymer of ethylene and an unsaturated ester having 4 to 20 carbon atoms, (ii) a... Agent: Dow Global Technologies Inc.

20110097899 - Method of forming funnel-shaped opening: A method of forming a funnel-shaped opening is provided. First, a substrate is provided, wherein a conductive layer is formed on the substrate. Then, a dielectric layer is formed over the conductive layer. Further, a first opening is formed in the dielectric layer, wherein the first opening exposes the conductive... Agent: Nanya Technology Corporation

20110097901 - Dual mode inductively coupled plasma reactor with adjustable phase coil assembly: Embodiments of dual mode inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a dual mode inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source... Agent: Applied Materials, Inc.

20110097902 - Method and apparatus of halogen removal: A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step... Agent: Lam Research Corporation

20110097900 - Quartz window for a degas chamber: A five-sided quartz window configured to be mounted on a degas chamber as a UV-transmissive window. The quartz window is made of synthetic quartz and has a uniform thickness. The shape of the quartz window is defined by an upper surface, a lower surface and a sidewall therebetween. The sidewall... Agent: Lam Research Corporation

20110097903 - Method, apparatus and program for manufacturing silicon structure: A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the... Agent: Sumitomo Precision Products Co., Ltd.

20110097904 - Method for repairing low-k dielectric damage: A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH4 gas is provided. The repair gas is formed into a plasma, while maintaining a... Agent: Lam Research Corporation

20110097905 - Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first... Agent: Genitech, Inc.

20110097907 - Laser annealing method and apparatus: During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a mask 10 which is disposed on the optical path of a laser light 2, and the mask 10 is operated so that the amount of shielding is periodically increased and... Agent: Ihi Corporation

20110097906 - Silicon crystallization system and silicon crystallization method using laser: A silicon crystallization system includes a vibration device for vibrating a linear laser beam along a longer-axis direction of the linear laser beam. A vibration frequency at which the laser beam is vibrated is periodically generated and randomly changes within a predetermined range.... Agent:

20110091998 - Semiconductor device including ferroelectric capacitor: A semiconductor device includes a ferroelectric capacitor formed above the lower interlevel insulating film covering a MOS transistor formed on a semiconductor substrate, including lamination of a lower electrode, an oxide ferroelectric film, a first upper electrode made of conductive oxide having a stoichiometric composition AOx1 and an actual composition... Agent: Fujitsu Semiconductor Limited

20110091999 - Adapter board and method for manufacturing same, probe card, method for inspecting semiconductor wafer, and method for manufacturing semiconductor device: A method of manufacturing a semiconductor device includes preparing two package substrates, electrically coupling a semiconductor wafer to a measuring apparatus, inspecting the wafer, dicing the semiconductor wafer into semiconductor elements and packaging the semiconductor element over the prepared package substrates.... Agent: Renesas Electronics Corporation

20110092000 - Method for manufacturing and testing an integrated electronic circuit: A method for manufacturing and for testing an integrated circuit, including the steps of forming, on the upper portion of the integrated circuit, a passivation layer including openings at the level of metal tracks of the last interconnect stack of the integrated circuit; forming, in the openings, first pads connected... Agent: Stmicroelectronics (rousset) Sas

20110092001 - Light emitting diode: A semiconductor device including a wafer-level LED includes a semiconductor structure coupled to first and second electrodes. The semiconductor includes a P-doped portion of a first layer to an N-doped portion of a second layer. The first layer includes a surface configured to emit light. The first electrode is electrically... Agent: Infineon Technologies Ag

20110092002 - Method for fabricating a light emitting diode package structure: The present invention discloses a method for fabricating a light emitting diode (LED) package structure. The method comprises the following steps: a carrier having a substrate and a first protrusion is provided, wherein the first protrusion is disposed on the substrate and has a recess. An adhesion layer and a... Agent: Industrial Technology Research Institute

20110092003 - Phosphor layer arrangement for use with light emitting diodes: Phosphor layer arrangement for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a least one light emitting diode, an encapsulation covering the at least one light emitting diode, a lens having a phosphor layer formed upon a bottom surface, the lens... Agent: Bridgelux, Inc.

20110092005 - Light-emitting-diode array and method for manufacturing the same: A method for forming a light-emitting-diode (LED) array is disclosed which comprises forming a LED structure on a substrate, dividing the LED structure into at least a first and a second LED device with a gap, depositing at least one polymer material over the LED structure substantially filling the gap,... Agent:

20110092004 - Manufacturing method of flat panel display: A manufacturing method of a flat panel display according to an exemplary embodiment of the present invention includes: coating a first adhering member on a first supporting plate; disposing a first substrate on the first adhering member; using ultrasonic waves to adhere the first supporting plate and the first substrate;... Agent:

20110092006 - Method of fabricating display device using plastic substrate: Disclosed is a method of fabricating a display device that includes: forming an adhesive layer of an inorganic material on a carrier substrate having a display area and a non-display area surrounding the display area; forming a plurality of adhesive patterns of a metallic material on the adhesive layer, each... Agent:

20110092007 - Method of fabricating antireflective grating pattern and method of fabricating optical device integrated with antireflective grating pattern: A method of fabricating an antireflective grating pattern and a method of fabricating an optical device integrated with an antireflective grating pattern are provided. The method of fabricating the antireflective grating pattern includes forming a photoresist (PR) pattern on a substrate using a hologram lithography process, forming a PR lens... Agent: Gwangju Institute Of Science And Technology

20110092008 - Liquid crystal display fabrication method: A method of fabricating an LCD includes providing first and second substrates. A gate electrode, a gate line, a connection electrode, a common electrode and a pixel electrode are formed on the first substrate through a first making process. A first insulation film is formed on the first substrate. A... Agent: Lg Display Co., Ltd.

20110092009 - Package, in particular for mems devices and method of making same: A package includes a substrate provided with a passing opening and a MEMS device. The MEMS device includes an active surface wherein a portion of the MEMS device is integrated sensitive to the chemical/physical variations of a fluid. The active surface of the MEMS device faces the substrate and is... Agent: Stmicroelectronics S.r.i.

20110092010 - High-throughput printing of nanostructured semiconductor precursor layer: Materials and devices are provided for high-throughput printing of nanostructured semiconductor precursor layer. In one embodiment, a material is provided that comprises of a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and/or VIA. The microflakes may be created by milling precursor... Agent:

20110092011 - Method for antireflection treatment of a zinc oxide film and method for manufacturing solar cell using the same: Provided are a method for antireflection treatment of a zinc oxide film and a method for manufacturing a solar cell using the same. In the anti-reflection treatment, a substrate is prepared, then a polycrystalline zinc oxide film is formed on the substrate. A surface of the polycrystalline zinc oxide film... Agent: Electronics And Telecommunications Research Institute

20110092012 - Process for producing photovoltaic device: A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer... Agent: Mitsubishi Heavy Industries, Ltd.

20110092013 - Method of manufacturing photoelectric conversion device: A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110092014 - Solar cell interconnection: Methods and devices for solar cell interconnection are provided. In one embodiment, the method includes physically alloying the ink metal to the underlying foil (hence excellent adhesion and conductivity with no pre-treatment), and by fusing the solid particles in the ink on the surface (eliminating any organic components) so that... Agent:

20110092015 - Mixed solvent systems for deposition of organic semiconductors: Compositions that contain an organic semiconductor dissolved in a solvent mixture are described. More specifically, the solvent mixture includes an alkane having 9 to 16 carbon atoms in an amount equal to 1 to 20 weight percent and an aromatic compound in an amount equal to 80 to 99 weight... Agent: 3m Innovative Properties Company

20110092016 - Method of treating semiconductor element: In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor... Agent: Canon Kabushiki Kaisha

20110092017 - Semiconductor device and manufacturing method the same: An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110092020 - Method for producing electronic part package: A peeling off layer 18 is formed on an entire surface of one surface side of a support plate 10 including the inner wall surfaces respectively of a recessed part 12 for an electronic part and recessed parts 16 for posts in which the posts 20 are formed. Then, the... Agent: Shinko Electric Industries Co., Ltd.

20110092019 - Method for stacked contact with low aspect ratio: A method for an integrated circuit structure includes providing a semiconductor substrate; forming a metallization layer over the semiconductor substrate; forming a first dielectric layer between the semiconductor substrate and the metallization layer; forming a second dielectric layer between the semiconductor substrate and the metallization layer, wherein the second dielectric... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110092018 - Wafer level packaged mems device: An apparatus and method for sensor architecture based on bulk machining of silicon wafers and fusion bond joining which provides a nearly all-silicon, hermetically sealed, microelectromechanical system (MEMS) device. An example device includes a device sensor mechanism formed in an active semiconductor layer and separated from a handle layer by... Agent: Honeywell International Inc.

20110092021 - Method for manufacturing package system incorporating flip-chip assembly: A method for manufacturing a package system includes: providing a first semiconductor die; mounting a second semiconductor die on the first semiconductor die using an inter-die interconnect to form a flip-chip assembly; and attaching the flip-chip assembly on a package substrate with a contact pad, a test connection, a z-bond... Agent:

20110092022 - Semiconductor device and fabrication method thereof: A semiconductor device includes a semiconductor chip having a plurality of electrode pads, and a rewiring pattern having a plurality of interconnects which are connected to the electrode pads and extend over an insulation film. The semiconductor device also includes a plurality of columnar electrodes each of which has a... Agent: Oki Semiconductor Co., Ltd.

20110092023 - Package structure of photodiode and forming method thereof: A package structure of photodiode and a forming method of the same are provided. The method includes providing a heat-dissipation plate; placing a circuit board on the heat-dissipation plate, the circuit board having an opening exposing a top surface of the heat-dissipation plate and a first contact pad located on... Agent: Solapoint Corporation

20110092025 - Ic card and booking-account system using the ic card: It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110092024 - Stacked semiconductor package and method for manufacturing the same: A stacked semiconductor package includes a semiconductor chip module including at least two semiconductor chips, each semiconductor chip having a first face, a second face opposite to the first face, and a circuit part. A through portion passes through the first and second faces of the semiconductor chip. A recess... Agent: Hynix Semiconductor Inc.

20110092026 - Fluorination pre-treatment of heat spreader attachment indium thermal interface material: The formation of electronic assemblies including a heat spreader coupled to a die through a thermal interface material formed from an indium preform, is described. One embodiment relates to a method including providing a preform comprising indium, the preform including an indium oxide layer thereon. The method also includes exposing... Agent:

20110092027 - Integrated circuit package having a castellated heatspreader: In one aspect, an embodiment of an IC package includes an IC chip electrically connected to a substrate, a heatspreader disposed over the IC chip, wherein the heatspreader does not directly contact the IC chip, and an encapsulant material encapsulating at least a portion of the IC chip and a... Agent: Green Arrow Asia Limited

20110092028 - Lead frame and method of manufacturing the same: A lead frame includes a base material having a front surface for mounting of a semiconductor chip and a back surface for connection with an external board, and an Ni layer having a thick section and thin section. The thick section is formed on the back surface of the base... Agent: Sumitomo Metal Mining Co., Ltd.

20110092029 - Sram cell with different crystal orientation than associated logic: An integrated circuit containing logic transistors and an array of SRAM cells in which the logic transistors are formed in semiconductor material with one crystal orientation and the SRAM cells are formed in a second semiconductor layer with another crystal orientation. A process of forming an integrated circuit containing logic... Agent: Texas Instruments Incorporated

20110092030 - System comprising a semiconductor device and structure: A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the... Agent: Nupga Corporation

20110092031 - Efficient interconnect structure for electrical fuse applications: A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes... Agent: International Business Machines Corporation

20110092032 - Manufacturing method of semiconductor device: Provided is a manufacturing methods of a semiconductor device. The methods includes: forming an active layer on a first substrate; bonding a top surface of the active layer with a second substrate and separating the active layer from the first substrate; forming conductive impurity regions corresponding to source and drain... Agent: Electronics And Telecommunications Research Institute

20110092033 - Nonvolatile semiconductor memory and process of producing the same: A nonvolatile semiconductor memory of an aspect of the present invention comprises a semiconductor substrate, a pillar-shaped semiconductor layer extending in the vertical direction with respect to the surface of the semiconductor substrate, a plurality of memory cells arranged in the vertical direction on the side surface of the semiconductor... Agent:

20110092034 - Zero capacitor ram with reliable drain voltage application and method for manufacturing the same: The following discloses and describes a zero capacitor RAM as well as a method for manufacturing the same. The zero capacitor RAM includes an SOI substrate. This SOI substrate is composed of a stacked structure of a silicon substrate, an embedded insulation film and a silicon layer. This layer is... Agent: Hynix Semiconductor Inc.

20110092035 - Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process: A semiconductor device includes a transistor, a capacitor and a resistor wherein the capacitor includes a doped polysilicon layer to function as a bottom conductive layer with a salicide block (SAB) layer as a dielectric layer covered by a Ti/TiN layer as a top conductive layer thus constituting a single... Agent:

20110092036 - Method for manufacturing semiconductor device: After forming a first capacitor hole, first mask material is filled in an upper portion of the first capacitor hole. A second capacitor hole is formed so that it is aligned with the first capacitor hole. After removing the first mask material, a lower electrode is formed in the first... Agent: Elpida Memory, Inc.

20110092037 - Semiconductor device: In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor... Agent: Renesas Electronics Corporation

20110092038 - Three dimensional semiconductor memory device and method of fabricating the same: Provided are a three dimensional semiconductor memory device and a method of fabricating the same. The method includes forming a stepwise structure by using mask patterns and a sacrificial mask pattern formed on the mask patterns as a consumable etch mask.... Agent:

20110092039 - Fin field effect transistor and method for forming the same: Example embodiments are directed to a method of forming a field effect transistor (FET) and a field effect transistor (FET) including a source/drain pair that is elevated with respect to the corresponding gate structure.... Agent:

20110092040 - Semiconductor device and method for fabricating the same: A semiconductor device and a method of fabricating the same include a semiconductor substrate, a high-k dielectric pattern and a metal-containing pattern sequentially being stacked on the semiconductor substrate, a gate pattern including poly semiconductor and disposed on the metal-containing pattern, and a protective layer disposed on the gate pattern,... Agent: Samsung Electronics Co., Ltd.

20110092041 - Phase change memory with diodes embedded in substrate: An integrated circuit structure includes a semiconductor substrate; a diode; and a phase change element over and electrically connected to the diode. The diode includes a first doped semiconductor region of a first conductivity type, wherein the first doped semiconductor region is embedded in the semiconductor substrate; and a second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110092042 - Monitor pattern of semiconductor device and method of manufacturing semiconductor device: A plurality of diffused resistors and a plurality of wirings (resistive elements) are alternately disposed along a virtual line, and those diffused resistors and wirings are connected in series by contact vias. In the same wiring layer as that of the wirings, a dummy pattern is formed so as to... Agent: Fujitsu Semiconductor Limited

20110092043 - Deep trench capacitor in a soi substrate having a laterally protruding buried strap: A deep trench is formed to a depth midway into a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A top semiconductor layer is laterally recessed by an isotropic etch that is selective to the buried insulator layer. The deep trench is then etched below a bottom surface of the... Agent: International Business Machines Corporation

20110092044 - Method for manufacturing capacitor lower electrodes of semiconductor memory: A method for manufacturing capacitor lower electrodes includes a dielectric layer, a first silicon nitride layer and a hard mask layer; partially etching the hard mask layer, the first silicon nitride layer and the dielectric layer to form a plurality of concave portions; depositing a second silicon nitride layer onto... Agent: Inotera Memories, Inc.

20110092045 - Buried decoupling capacitors, devices and systems including same, and methods of fabrication: A buried decoupling capacitor apparatus and method are provided. According to various embodiments, a buried decoupling capacitor apparatus includes a semiconductor-on-insulator substrate having a buried insulator region and top semiconductor region on the buried insulator region. The apparatus embodiment also includes a first capacitor plate having a doped region in... Agent:

20110092046 - Method of forming semiconductor devices in wafer assembly: An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end,... Agent: Applied Nanostructures, Inc.

20110092047 - Strained semiconductor using elastic edge relaxation, a buried stressor layer and a sacrificial stressor layer: The present invention relates to creating an active layer of strained semiconductor using a combination of buried and sacrificial stressors. That is, a process can strain an active semiconductor layer by transferring strain from a stressor layer buried below the active semiconductor layer and by transferring strain from a sacrificial... Agent: Acorn Technologies, Inc.

20110092048 - Method of forming active region structure: A method of forming an active region structure includes preparing a semiconductor substrate having a cell array region and a peripheral circuit region, forming upper cell mask patterns having a line shape in the cell array region, forming first and second peripheral mask patterns in the peripheral circuit region, the... Agent:

20110092049 - Method and apparatus for substrate bonding: Methods for bonding a first substrate to a second substrate are described. A surface of the first substrate is coated with an adhesive layer. The adhesive layer is cured to b-stage. The surface of the first substrate is positioned in contact with the second substrate. An edge of the first... Agent:

20110092050 - Method for manufacturing semiconductor device: A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110092051 - Process for the transfer of a thin film comprising an inclusion creation step: A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form... Agent: Commissariat A L'energie Atomique

20110092052 - Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate: A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction... Agent: Sumitomo Electric Industries, Ltd.

20110092053 - Wire discharge-machining apparatus and wire discharge-machining method, semiconductor wafer manufacturing apparatus and semiconductor wafer manufacturing method, and solar-cell wafer manufacturing apparatus and solar-cell wafer manufacturing method: A wire machining method includes: a wire electrode set as cutting wires provided in parallel with a distance between the cutting wires of which a predetermined regional part faces a workpiece; a machining power source that generates a pulse-shaped machining voltage; and plural feeder units that are electrically connected to... Agent: Mitsubishi Electric Corporation

20110092054 - Methods for fixing graphene defects using a laser beam and methods of manufacturing an electronic device: Methods of fixing graphene using a laser beam and methods of manufacturing an electronic device are provided, the method of fixing graphene includes fixing a defect of a graphene nanoribbon by irradiating the laser beam onto the graphene nanoribbon.... Agent: Samsung Electronics Co., Ltd.

20110092055 - Compound semiconductor substrate grown on metal layer, method of manufacturing the same, and compound semiconductor device using the same: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor... Agent: Siltron, Inc.

20110092056 - Electrically conductive path forming below barrier oxide layer and integrated circuit: Methods of forming an electrically conductive path under a barrier oxide layer of a semiconductor-on-insulator (SOI) substrate and an integrated circuit including the path are disclosed. In one embodiment, the method includes forming an electrically conductive path below a barrier oxide layer of a semiconductor-on-insulator (SOI) substrate, the method comprising:... Agent:

20110092057 - Methods of fabricating transistors using laser annealing of source/drain regions: Fabrication of a Group III-nitride transistor device can include implanting dopant ions into a stacked Group III-nitride channel layer and Group III-nitride barrier layer to form source/drain regions therein with a channel region therebetween. The channel layer has a lower bandgap energy than the barrier layer along a heterojunction interface... Agent: Cree, Inc.

20110092058 - Ion implanted substrate having capping layer and method: In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer comprising dispersed gas pockets is deposited on the ion implanted region.... Agent: Applied Materials, Inc.

20110092059 - Techniques for processing a substrate: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one... Agent: Varian Semiconductor Equipment Associates, Inc.

20110092060 - Methods of forming wiring structures: A semiconductor memory wiring method includes: receiving a substrate having a cell array region and a peripheral circuit region; depositing a first insulating layer on the substrate; forming a first contact plug in the cell array region, the first contact plug having a first conductive material extending through the first... Agent:

20110092061 - Methods of forming silicon oxides and methods of forming interlevel dielectrics: A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising surface. Such surface is treated with a fluid that is at least 99.5% H2O by volume. A polysilazane-comprising spin-on dielectric material is formed onto the... Agent:

20110092062 - Transistor gate forming methods and transistor structures: A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within... Agent: Micron Technology, Inc.

20110092063 - Method of manufacturing silicon carbide semiconductor device: In a method of manufacturing a silicon carbide semiconductor device, a semiconductor substrate made of silicon carbide and having first and second opposing surfaces is prepared. The second surface of the semiconductor substrate is processed so that a surface roughness of the second surface is less than or equal to... Agent: Denso Corporation

20110092064 - Preventing ubm oxidation in bump formation processes: A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110092065 - Semiconductor device suitable for a stacked structure: A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side.... Agent: Fujitsu Semiconductor Limited

20110092066 - Bumping electronic components using transfer substrates: A method for forming solder bumps on an electronic component. Providing a transfer substrate having a plurality of solder balls, disposing the transfer substrate on the surface of the electronic component, heating to reflow the solder balls onto the electronic component; and removing the sacrificial substrate. The transfer substrate may... Agent:

20110092067 - Air gap structure having protective metal silicide pads on a metal feature: A hard mask is formed on an interconnect structure comprising a low-k material layer and a metal feature embedded therein. A block polymer is applied to the hard mask layer, self-assembled, and patterned to form a polymeric matrix of a polymeric block component and containing cylindrical holes. The hard mask... Agent: International Business Machines Corporation

20110092068 - Semiconductor device and method for fabricating the same: A semiconductor device includes: a first insulation film formed over a semiconductor substrate; and a plurality of first interconnects selectively formed in the first insulation film. A plurality of gaps are formed in part of the first insulation film located between adjacent ones of the first interconnects so that each... Agent: Panasonic Corporation

20110092069 - Self-aligned patterned etch stop layers for semiconductor devices: A method of forming a semiconductor device includes patterning a photoresist layer formed over a homogeneous semiconductor device layer to be etched; subjecting the semiconductor device to an implant process that selectively implants a sacrificial etch stop layer that is self-aligned in accordance with locations of features to be etched... Agent: International Business Machines Corporation

20110092070 - Method for film formation, apparatus for film formation, and computer-readable recording medium: Disclosed is a method for film formation, characterized by comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction... Agent: Tokyo Electron Limited

20110092071 - Method of producing silylated porous insulating film, method of producing semiconductor device, and silylated material: Provided is a method for the effective silylation treatment of a silica-based porous insulating film having a plurality of pores. The method of producing a silylated porous insulating film (204c) includes a process whereby a porous insulating film (204b) having a plurality of pores is formed, and a process wherein... Agent: Ulvac Inc.

20110092072 - Heating plate with planar heating zones for semiconductor processing: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes... Agent: Lam Research Corporation

20110092073 - Plasma processing apparatus, plasma processing method, and method for manufacturing electronic device: A plasma processing apparatus includes: a processing container capable of maintaining an atmosphere having a pressure lower than atmospheric pressure; an evacuation unit reducing a pressure of an interior of the processing container; a gas introduction unit introducing a process gas to the interior of the processing container; a microwave... Agent: Shibaura Mechatronics Corporation

20110092074 - Texturing and cleaning agent for the surface treatment of wafers and use thereof: A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for... Agent: Fraunhofer-gesellschaft Zur Forderung Der Angewandten Forschung E.v.

20110092076 - Apparatus and method of vapor coating in an electronic device: An apparatus and method for vapor phase deposition of a reactive surface area (RSA) material onto a substrate of an electronic device. The vapor phase deposition is conducted at ambient pressures in air, and provides capture of residual vapor to minimize environmental release of RSA and other constituents used in... Agent: E.i. Du Pont De Nemours And Company

20110092075 - Manufacturing apparatus and method for semiconductor device: A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring... Agent:

20110092077 - Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics: Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed form the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a... Agent:

20110092078 - Selective functionalization of doped group iv nanoparticle surfaces using lewis acid/lewis base interaction: A method of selectively attaching a capping agent to a Group IV semiconductor surface is disclosed. The method includes providing the Group IV semiconductor surface, the Group IV semiconductor surface including a set of covalently bonded Group IV semiconductor atoms and a set of surface boron atoms. The method also... Agent: Innovalight, Inc.

20110092079 - Method and installation for producing an anti-reflection and/or passivation coating for semiconductor devices: A method of producing an anti-reflection and/or passivation coating for semiconductor devices is provided. The method includes: providing a semiconductor device precursor 30 having a surface to be provided with the anti-reflection and/or passivation coating; treating the surface with ions; and depositing a hydrogen containing anti-reflection and/or passivation coating onto... Agent: Applied Materials, Inc.

20110086439 - Method and apparatus for manufacturing magnetoresistive element: A method of manufacturing a magnetoresistive element includes a tunnel barrier forming step. The tunnel barrier forming step comprises a metal layer forming step of forming a metal layer to have a first thickness, a plasma processing step of performing a plasma treatment which exposes the metal layer to a... Agent: Canon Anelva Corporation

20110086440 - Method for manufacturing an extraordinary magnetoresistive (emr) device with novel lead structure: A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt... Agent: Hitachi Global Storage Technologies Netherlands B.v.

20110086441 - Laser annealing method and laser annealing apparatus: In laser annealing using a solid state laser, a focus position of a minor axial direction of a rectangular beam is easily corrected depending on positional variation of a laser irradiated portion of a semiconductor film. By using a minor-axis condenser lens 29 condensing incident light in a minor axial... Agent: Ihi Corporation

20110086442 - Copper contamination detection method and system for monitoring copper contamination: A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in... Agent: International Business Machines Corporation

20110086443 - Method of manufacturing semiconductor device: A manufacturing yield of a semiconductor device (capacitive micromachined ultrasonic transducer) is increased. A plurality of first chips 1 in which a plurality of cells each having functions of transmitting and receiving ultrasonic waves are formed on a front surface of a first semiconductor wafer are manufactured, and each of... Agent:

20110086444 - Process for producing substrates free of patterns using an alpha stepper to ensure results: The present disclosure provides a method for making an integrated circuit. The method comprises processing a first surface of a substrate to create the integrated circuit and grinding a second surface of the substrate to remove material until the substrate is substantially close to a desire thickness. The method also... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110086445 - Methods relating to capacitive monitoring of layer characteristics during back end-of-the-line processing: Methods are provided that relate to the capacitive monitoring of characteristic pertaining to layer formed during the back end-of-the-line (BEOL) processing of a semiconductor device. In one embodiment, a method includes the steps of forming a first capacitor array including first and second overlying contacts each formed in a different... Agent: Globalfoundries Inc.

20110086446 - Method of forming thermal bend actuator with connector posts connected to drive circuitry: A method of forming a thermal bend actuator in an inkjet nozzle assembly. The method includes: depositing sidewalls and a roof layer to define a nozzle chamber; defining first and second vias in one sidewall to reveal first and second electrodes; filling the vias with a conductive material using electroless... Agent: Silverbrook Research Pty Ltd

20110086448 - Flip-chip light emitting diodes and method of manufacturing thereof: Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable... Agent:

20110086447 - Method for producing a multiplicity of optoelectronic components: A method for producing a multiplicity of optoelectronic components includes providing a semiconductor body carrier including on a first main area a multiplicity of semiconductor bodies, each provided with a contact structure and having an active layer that generates electromagnetic radiation, in a semiconductor layer sequence, and forming a planar... Agent: Osram Opto Semiconductors Gmbh

20110086451 - Flat panel display and method of fabricating the same: A flat panel display, and method of fabricating the same, including a substrate having a display portion and a pad that is arranged on the substrate and is electrically coupled with the display portion. The pad includes a pad electrode arranged on the substrate, a passivation layer arranged on the... Agent: Samsung Mobile Display Co., Ltd.

20110086449 - Method for fabricating oxide-confined vertical-cavity surface-emitting laser: The present invention discloses a method for fabricating a heat-resistant, humidity-resistant oxide-confined vertical-cavity surface-emitting laser (VCSEL) by slowing down the oxidizing rate during a VCSEL oxidation process to thereby reduce stress concentration of an oxidation layer and by preventing moisture invasion using a passivation layer disposed on a laser window.... Agent:

20110086450 - Method of manufacturing thin film transistor array substrate: Disclosed is a method of manufacturing a TFT array substrate having a reduced number of mask processes. The method includes sequentially depositing a first conductive material, a gate insulating layer, a semiconductor layer, and a second conductive material on a substrate, and forming a first resist pattern having three height... Agent:

20110086452 - Semiconductor having enhanced carbon doping: Methods for fabricating semiconductors with enhanced strain. One embodiment includes fabrication of a semiconductor device with an epitaxial structure. The epitaxial structure is formed with one or more semiconductor layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial... Agent: Finisar Corporation

20110086453 - Light emitting device having isolating insulative layer for isolating light emitting cells from each other and method of fabricating the same: Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells... Agent: Seoul Opto Device Co., Ltd.

20110086454 - Dibenzofurane polymers for electroluminiscent devices: Disclosed are electroluminescent materials comprising a homopolymer based on recurring structural units of the formula (I) wherein R9, R9′ R9″, R11, R13′ R14, R11′, R13′, R14′ independently are H or an organic substituent, where at least one of R9, R9′ R9″, R11, R13 R14, R11′, R13′, R14′ comprises a group... Agent: Basf Se

20110086455 - Gyroscope: A gyroscope (10) comprises an outer frame (11); an inner frame (12) positioned inside the outer frame and supported to be movable in one reciprocating direction; a plurality of proof masses (15) positioned inside the inner frame and supported to be movable in the direction orthogonal to the one reciprocating... Agent: Japan Aerospace Exploration Agency

20110086456 - betavoltaic battery with a shallow junction and a method for making same: This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+N− SiC junctions and a pillared or planar device surface (as an example). Junctions are deemed “ultra shallow”, since the thin junction layer (which is proximal to the device's radioactive source) is only... Agent:

20110086457 - Thin film laminated body manufacturing apparatus and method: A strip-shape flexible substrate is transported over a long horizontal distance, with its width extending in the vertical direction, the position of the substrate in the vertical direction is maintained with high precision, and the films are deposited onto its surface. When depositing the thin films to manufacture a thin... Agent: Fuji Electric Systems Co., Ltd.

20110086458 - Cmos image sensor with asymmetric well structure of source follower: Provided is a CMOS image sensor with an asymmetric well structure of a source follower. The CMOS image sensor includes: a well disposed in an active region of a substrate; a drive transistor having one terminal connected to a power voltage and a first gate electrode disposed to cross the... Agent: Crosstek Capital, LLC

20110086459 - Method of fabricating a complementary metal oxide semiconductor (cmos) image sensor: There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with... Agent: Crosstek Capital, LLC

20110086460 - Solid-state image pickup element, solid-state image pickup device and production method therefor: It is intended to provide a solid-state image pickup element capable of reducing an area of a read channel to increase a ratio of a surface area of a light-receiving section to the overall surface area of one pixel. The solid-state image pickup element comprises a first-conductive type planar semiconductor... Agent: Unisantis Electronics (japan) Ltd.

20110086461 - Method for making an optical device with integrated optoelectronic components: A method for making an optical device with integrated optoelectronic components, including a) making a protective structure including a support in which at least one blind hole is made, an optical element being positioned in the blind hole, b) attaching the support to a substrate including the integrated optoelectronic components,... Agent: Commiss. A L'energie Atom. Et Aux Energ. Alterna.

20110086462 - Process for manufacturing solar cells including ambient pressure plasma torch step: A method of forming photovoltaic devices and modules that includes an ambient pressure thin film deposition step. The central combination of the photovoltaic device structure includes a back reflector layer, active photovoltaic material and transparent electrode. The central combination is formed on a substrate having an electrical isolation layer deposited... Agent:

20110086463 - Back-illuminated type solid-state imaging device: A method for manufacturing a back-illuminated type solid-state imaging device by (a) providing a substrate having, on a front surface side thereof, a semiconductor film on a semiconductor substrate with an insulation film therebetween; (b) forming in the semiconductor substrate a charge accumulation portion of a photoelectric conversion element that... Agent: Sony Corporation

20110086464 - Tuning of fe catalysts for growth of spin-capable carbon nanotubes: Growing spin-capable multi-walled carbon nanotube (MWCNT) forests in a repeatable fashion will become possible through understanding the critical factors affecting the forest growth. Here we show that the spinning capability depends on the alignment of adjacent MWCNTs in the forest which in turn results from the synergistic combination of a... Agent: Board Of Regents, The University Of Texas System

20110086465 - Cigs solar cell structure and method for fabricating the same: A copper/indium/gallium/selenium (CIGS) solar cell structure and a method for fabricating the same are provided. The CIGS solar cell structure includes a substrate, a molybdenum thin film layer, an alloy thin film layer, and a CIGS thin film layer. According to the present invention, the alloy thin film layer is... Agent:

20110086466 - Contact fabrication of emitter wrap-through back contact silicon solar cells: Back contact solar cells including rear surface structures and methods for making same. The rear surface has small contact areas through at least one dielectric layer, including but not limited to a passivation layer, a nitride layer, a diffusion barrier, and/or a metallization barrier. The dielectric layer is preferably screen... Agent: Applied Materials, Inc.

20110086467 - Method of fabricating an organic thin film transistor and method of surface treatment for gate insulating layer: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on... Agent: National Tsing Hua University

20110086468 - Assembly of semiconductor chips/wafers: A method for assembling a first semiconductor chip provided with pads on a second semiconductor chip or wafer provided with pads, comprising covering the chip(s) with a dielectric, superposing the two chips, the pads being arranged substantially opposite to each other, and applying a voltage difference between the pads of... Agent:

20110086469 - Modular low stress package technology: A method of manufacturing a protected package assembly: providing a protective modular package cover in accordance with a modular design; selectively applying an adhesive to the cross member of each subassembly receiving section of the protective modular package cover that will receive a subassembly to form an adhesive layer of... Agent: Rjr Polymers, Inc.

20110086470 - Additional metal routing in semiconductor devices: Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing... Agent: Micron Technology, Inc.

20110086471 - Method of producing a semiconductor device with an aluminum or aluminum alloy electrode: A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a region of the first major surface, the method has a step of forming a rear electrode in a... Agent: Fuji Electric Device Technology Co., Ltd.

20110086472 - Semiconductor device and method for forming the same: An improved type thin film semiconductor device and a method for forming the same are described. That is, in a thin film semiconductor device such as TFT formed on an insulating substrate, it is possible to prevent the intrusion of a mobile ion from a substrate or other parts, by... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110086473 - Hybrid orientation semiconductor structure with reduced boundary defects and method of forming same: The present invention provides an improved amorphization/templated recrystallization (ATR) method for forming hybrid orientation substrates and semiconductor device structures. A direct-silicon-bonded (DSB) silicon layer having a (011) surface crystal orientation is bonded to a base silicon substrate having a (001) surface crystal orientation to form a DSB wafer in which... Agent: International Business Machines Corporation

20110086474 - Method of manufacturing thin film transistor substrate: A method of manufacturing a thin film transistor substrate includes a first process in which a gate line pattern including a gate line and a gate electrode is formed with a first conductive material on a substrate using a first mask, a second process in which a first insulating layer... Agent:

20110086475 - Semiconductor device, and manufacturing method of semiconductor device: In order to form a plurality of semiconductor elements over an insulating surface, in one continuous semiconductor layer, an element region serving as a semiconductor element and an element isolation region having a function to electrically isolate element regions from each other by repetition of PN junctions. The element isolation... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110086476 - Methods of forming field effect transistors on substrates: The invention includes methods of forming field effect transistors. In one implementation, the invention encompasses a method of forming a field effect transistor on a substrate, where the field effect transistor comprises a pair of conductively doped source/drain regions, a channel region received intermediate the pair of source/drain regions, and... Agent: Micron Technology, Inc.

20110086477 - Method of manufacturing semiconductor device: A semiconductor device manufacturing method may include the following processes. A semiconductor substrate is partially removed using a first insulating film having first and second portions as a mask to form first and second pillars of the semiconductor substrate. A second insulating film is formed on side surfaces of the... Agent: Elpida Memory, Inc.

20110086478 - Systems and methods for integrated circuits comprising multiple body biasing domains: Systems and methods for integrated circuits comprising multiple body biasing domains. In accordance with a first embodiment, a semiconductor structure comprises a substrate of first type material. A first closed structure comprising walls of second type material extends from a surface of the substrate to a first depth. A planar... Agent:

20110086479 - Method for selective formation of trench: A method for selective formation of trenches is disclosed. First, a substrate is provided. The substrate includes a first semiconductor element and a second semiconductor element. The first semiconductor element has a dopant. Second, a wet etching procedure is carried out to selectively form a pair of trenches in the... Agent:

20110086480 - Semiconductor device and manufacturing method of the same: A trench is formed so as to reach a p−-type epitaxial layer from an upper surface of a source region. A gate electrode is formed so as to bury the trench. Each of body contact trenches is formed away from the gate electrode. A body contact region is formed at... Agent: Renesas Electronics Corporation

20110086481 - Methods of forming non-volatile memory structure with crested barrier tunnel layer: Embodiments of methods of forming non-volatile memory structures are provided. In one such embodiment, first and second source/drain regions are formed on a substrate so that the first and second source/drain regions define an intervening channel region. A charge blocking layer is formed over the channel region. A trapping layer... Agent: Micron Technology, Inc.

20110086482 - Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate: A method for fabricating a floating gate memory device comprises using a buried diffusion oxide that is below the floating gate thereby producing an increased step height between the floating gate and the buried diffusion oxide. The increased step height can produce a higher GCR, while still allowing decreased cell... Agent: Macronix International Co., Ltd.

20110086483 - Non-volatile memory device for 2-bit operation and method of fabricating the same: A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate,... Agent: Samsung Electronics Co., Ltd.

20110086484 - Body tie test structure for accurate body effect measurement: A body tie test structure and methods for its manufacture are provided. The transistor comprises a body-tied semiconductor on insulator (SOI) transistor formed in a layer of semiconductor material, the transistor comprising a cross-shaped gate structure with a substantially constant gate length L. An insulating blocking layer enables formation of... Agent: Globalfoundries Inc.

20110086485 - Method for manufacturing a mos semiconductor memory device, and plasma cvd device: To manufacture a MOS semiconductor memory device having an insulating film laminate in which adjacent insulating films have band-gaps of different sizes, a plasma processing device which transmits microwaves to a chamber by means of a planar antenna having a plurality of holes is used to perform plasma CVD under... Agent: Tohoku University

20110086486 - Methods of forming integrated circuit chips having vertically extended through-substrate vias therein: Methods of forming an integrated circuit device include forming an interlayer dielectric layer on a first surface of a semiconductor substrate and then forming an interconnect hole that extends through the interlayer dielectric layer and into the semiconductor substrate. A first sidewall spacer layer is formed on a sidewall of... Agent:

20110086487 - Semiconductor device with reduced capacitance tolerance value: A semiconductor device includes a capacitance, the numerical value of which is relevant for a device function. The capacitance is formed from a parallel connection of at least a first and a second capacitor element, wherein the first and second capacitor elements are formed in respective manufacturing steps that exhibit... Agent:

20110086488 - Plasma etch for chromium alloys: A reactive ion etching (RIE) process comprising a chlorine source gas and an oxygen source gas with an atomic ratio of chlorine to oxygen in the plasma of at least 6 to 1 is used to etch chromium alloy films such as SiCr, SiCrC, SiCrO, SiCrCO, SiCrCN, SiCrON, SiCrCON, CrO,... Agent: Texas Instruments Incorporated

20110086489 - Methods of manufacturing a hybrid electrical contact: Techniques for manufacturing an electronic device. In certain embodiments, a substrate includes a lower patterned layer that has a target conductor. A hybrid-vertical contact may be disposed directly on the target conductor. The hybrid vertical contact may include a lower-vertical contact directly on the target conductor and an upper-vertical contact... Agent: Micron Technology, Inc.

20110086490 - Single-side implanting process for capacitors of stack dram: A single-side implanting process for capacitors of stack DRAM is disclosed. Firstly, form a stacked structure with a dielectric layer and an insulating nitride layer on a semi-conductor substrate and etch the stacked structure to form a plurality of trenches. Then, form conductive metal plates respectively on an upper surface... Agent: Inotera Memories, Inc.

20110086491 - Growing a iii-v layer on silicon using aligned nano-scale patterns: A method of forming an integrated circuit structure includes providing a wafer having a silicon substrate; forming a plurality of shallow trench isolation (STI) regions in the silicon substrate; and forming recesses by removing top portions of the silicon substrate between opposite sidewalls of the plurality of STI regions. Substantially... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110086492 - Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate: An object of an embodiment of the disclosed invention is to provide a method suitable for reprocessing a semiconductor substrate which is reused to manufacture an SOI substrate. A semiconductor substrate is reprocessed in the following manner: etching treatment is performed on a semiconductor substrate in which a step portion... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110086493 - Semiconductor chip having island dispersion structure and method for manufacturing the same: The present invention has an object to provide a semiconductor chip of high reliability with less risk of breakage. Specifically, the present invention provides a semiconductor chip having a semiconductor silicon substrate including a semiconductor device layer and a porous silicon domain layer, the semiconductor device layer being provided in... Agent: Elpida Memory, Inc.

20110086494 - Method of removing heavy metal in semiconductor substrate: A method of removing a heavy metal in a semiconductor substrate of the present invention comprises: attaching, to a rear surface of the semiconductor substrate, a material that lowers a potential barrier of the rear surface of the semiconductor substrate, on a front surface of which a circuit is to... Agent: Sumco Corporation

20110086496 - Metal organic chemical vapor deposition apparatus and method: A metal organic chemical vapor deposition apparatus includes reaction chambers in which nitride layers is deposited on a substrate using a group III-V material, a buffer chamber connected to the reaction chambers and in which a transfer robot is disposed to transfer the substrate into the reaction chambers, a gas... Agent: Ligadp Co., Ltd.

20110086497 - Method for producing semiconductor device: A method of producing a device includes embedding trenches with an epitaxial layer having high crystallinity while a mask oxide film remains unremoved. An n-type semiconductor is formed on the surface of a silicon substrate, and a mask oxide film and a mask nitride film are formed on the surface... Agent: C/o Fuji Electric Systems Co., Ltd.

20110086495 - Methods for protecting film layers while removing hardmasks during fabrication of semiconductor devices: Methods for fabricating semiconductor devices are provided. The methods include providing a semiconductor substrate having pFET and nFET regions, each having active areas and shallow trench isolation. A hardmask layer is formed overlying the semiconductor substrate. A photoresist layer is provided over the hardmask layer. The phoresist layer is patterned.... Agent: Globalfoundries Inc.

20110086498 - Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures: Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110086500 - Impurity implantation method and ion implantation apparatus: An impurity is implanted by ion implantation into an object to be processed. The ion implantation is performed using an ion beam which is diverged after being temporarily converged.... Agent:

20110086499 - Method for removing photoresist: A method for removing a photoresist is disclosed. First, a substrate including a patterned photoresist is provided. Second, an ion implantation is carried out on the substrate. Then, a non-oxidative pre-treatment is carried out on the substrate. The non-oxidative pre-treatment provides hydrogen, a carrier gas and plasma. Later, a photoresist-stripping... Agent:

20110086501 - Technique for processing a substrate having a non-planar surface: A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is... Agent: Varian Semiconductor Equipment Associates, Inc.

20110086502 - Method for fabricating a gate structure: An method of fabricating the gate structure comprises: sequentially depositing and patterning a dummy oxide layer and a dummy gate electrode layer on a substrate; surrounding the dummy oxide layer and the dummy gate electrode layer with a nitrogen-containing dielectric layer and an interlayer dielectric layer; removing the dummy gate... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110086503 - Method for fabricating semiconductor device with buried gates: A method for fabricating a semiconductor device includes providing a substrate including cell regions and peripheral regions; selectively forming a gate conductive layer over the substrate in the peripheral regions, forming a sealing layer over the substrate with the gate conductive layer formed thereon, forming an insulation layer over the... Agent:

20110086504 - Methods for forming integrated circuits: A method for forming an integrated circuit is provided. The method includes forming a gate dielectric structure over a substrate. A titanium-containing sacrificial layer is formed, contacting the gate dielectric structure. The whole titanium-containing sacrificial layer is substantially removed.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110086505 - Metallic bump structure without under bump metallurgy and a manufacturing method thereof: The metallic bump is directly formed on a semiconductor wafer's I/O pad without UBM. First, a zinc layer is formed on the I/O pad or an anti-oxidation layer of the I/O pad is selectively etched off. Then, an isolative layer and a copper foil are arranged sequentially in this order... Agent:

20110086506 - Method for fabricating damascene interconnect structure having air gaps between metal lines: An exemplary method for fabricating a damascene interconnect structure includes the following. First, providing a substrate. Second, depositing a multilayer dielectric film on the substrate. Third, forming a patterned photoresist on the multilayer dielectric film. Fourth, etching the multilayer dielectric film to form a plurality of trenches, a portion of... Agent: Innolux Display Corp.

20110086507 - Method for providing oxide layers: A method for providing an oxide layer on a semiconductor substrate is disclosed. In one aspect, the method includes obtaining a semiconductor substrate. The substrate may have a three-dimensional structure, which may comprise at least one hole. The method may also include forming an oxide layer on the substrate, for... Agent: Imec

20110086508 - Semiconductor device having metal wirings of laminated structure: A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material.... Agent: Fujitsu Semiconductor Limited

20110086509 - Process for forming cobalt and cobalt silicide materials in tungsten contact applications: Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma... Agent:

20110086510 - Semiconductor device and method of manufacture thereof: A semiconductor device relating to the present invention has multiple gate electrodes arranged on a semiconductor substrate at a narrow spacing and an interlayer insulating film covering the gate electrodes. The interlayer insulating film consists of a hygroscopic insulating film filling gate electrode spacing with a thinner thickness on the... Agent: Panasonic Corporation

20110086511 - Photomask having a reduced field size and method of using the same: A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field... Agent:

20110086512 - Semiconductor device fabrication method and semiconductor device: A resist pattern (5) is formed in a dimension of a limitation of an exposure resolution over a hard mask material film (4) over a work film (3). The material film (4) is processed using the resist pattern (5) as a mask. A hard mask pattern (6) is thereby formed.... Agent: Kabushiki Kaisha Toshiba

20110086514 - Substrate processing method and apparatus: A substrate processing method is arranged to perform a heat process on a substrate with a coating film formed thereon to bake and cure the coating film. At first, the substrate, with the coating film formed thereon, is held at a preparatory temperature lower than a lower limit of temperature... Agent: Tokyo Electron Limited

20110086513 - Upper electrode backing member with particle reducing features: Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are... Agent: Lam Research Corporation

20110086515 - Mask pattern verification apparatus, mask pattern verification method and method of fabricating a semiconductor device: In one embodiment, a mask pattern verification apparatus is disclosed. The mask pattern verification apparatus can include a library registration portion registered a clean circuit pattern, a memory portion saved a design circuit pattern, a verification circuit pattern, a verification mask pattern, and a verification wafer pattern, a mask verification... Agent: Kabushiki Kaisha Toshiba

20110086516 - Method of depositing dielectric film having si-n bonds by modified peald method: A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses... Agent: Asm Japan K.k.

20110086517 - Process for producing silicon nitride film, process for producing silicon nitride film laminate, computer-readable storage medium, and plasma cvd device: Disclosed is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under... Agent: Tokyo Electron Limited

20110086518 - Post chromium alloy plasma etch ashing process: A method for ashing hardened resist from a photoresist patterned chromium alloy post etch using a plasma ashing chemistry which contains no gaseous source of hydrogen and contains a gaseous source of oxygen and a gaseous source of nitrogen with an oxygen to nitrogen atomic ratio of at least 5.... Agent: Texas Instruments Incorporated

20110081732 - Method of manufacturing magnetic tunnel junction device and apparatus for manufacturing the same: A method of manufacturing a magnetic tunnel junction device includes a barrier layer forming step of forming a tunnel barrier layer. The barrier layer forming step comprises a step of depositing a first metal layer, an oxygen surfactant layer forming step of forming an oxygen surfactant layer on the first... Agent: Canon Anelva Corporation

20110081733 - Thin film photovoltaic device: The present invention provides a thin film photovoltaic device and a method of forming a thin film photovoltaic device. The thin film photovoltaic device has a substrate, a thin film layer formed on the substrate and first and second electrodes formed on one side of the thin film layer. By... Agent: Agency For Science, Technology And Research

20110081734 - Method and arrangement for producing an n-semiconductive indium sulfide thin layer: A method of producing, at atmospheric pressure, an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous precursor, and an inert carrier gas stream includes cyclically repeating first and second steps so as to produce an indium sulfide thin film... Agent: Helmholtz-zentrum Berlin Fuer Materialien Und Energie Gmbh

20110081735 - Process for forming encapsulated electronic devices: There is provided herein a process for forming an encapsulated electronic device. The device has active areas and sealing areas on a substrate. The process includes providing the substrate; forming a discontinuous pattern of a material having a first surface energy on at least a portion of the sealing areas;... Agent: E. I. Du Pont De Nemours And Company

20110081736 - Method for manufacturing light-emitting diode devices: A method for manufacturing light-emitting diode devices. Multiple metal frames are provided. The metal frames are adjacent to each other and are arranged on a same plane. Each metal frame includes a first connection pin and a second connection pin. A light-emitting diode chip is disposed on and electrically connected... Agent:

20110081737 - Method for manufacturing light emitting diode assembly: A method for manufacturing a light emitting diode (LED) assembly comprises the steps of: covering a light-reflection layer onto a substrate layer, covering a light-emitting layer onto the light-reflection layer, and forming a P type electrode and an N type electrode extended from the light-emitting layer, perforating through the light-reflection... Agent: Edison Opto Corporation

20110081738 - Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, led head that employs the semiconductor composite apparatus, and image forming apparatus that employs the led head: A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate.... Agent: Oki Data Corporation

20110081739 - Electronic device including mems devices and holed substrates, in particular of the lga or bga type: An electronic device includes a substrate provided with a passing opening and a MEMS device including an active surface wherein a portion of the MEMS device is integrated sensitive to chemical/physical variations of a fluid. The active surface of the MEMS device faces the substrate and is spaced therefrom, the... Agent: Stmicroelectronics (malta) Ltd.

20110081740 - Low stress photo-sensitive resin with sponge-like structure and devices manufactured employing same: System and method for forming a structure including a MEMS device structure. In order to prevent warpage of a substrate arising from curing process for a sacrificial material (such as a photoresist), and from subsequent high temperature process steps, an improved sacrificial material comprises (i) a polymer and (ii) a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110081741 - Thermoelectric conversion module and method for manufacturing thermoelectric conversion module: A thermoelectric conversion module includes a laminated body including a plurality of thermoelectric components laminated therein. Each of the thermoelectric components includes an insulating layer, and a thermoelectric conversion element section in which a plurality of p-type thermoelectric conversion material layers and a plurality of n-type thermoelectric conversion material layers... Agent: Murata Manufacturing Co., Ltd.

20110081742 - Texturing semiconductor substrates: Semiconductors are textured with aqueous solutions containing non-volatile alkoxylated glycols, their ethers and ether acetate derivatives having molecular weights of 170 or greater and flash points of 75° C. or greater. The textured semiconductors can be used in the manufacture of photovoltaic devices.... Agent: Rohm And Haas Electronic Materials LLC

20110081743 - Buffer layer and manufacturing method thereof, reaction solution, photoelectric conversion device, and solar cell: A buffer layer manufacturing method, including: a preparation step for preparing a reaction solution which includes a component (Z) of at least one kind of zinc source, a component (S) of at least one kind of sulfur source, a component (C) of at least one kind of citrate compound, a... Agent: Fujifilm Corporation

20110081744 - Buffer layer and manufacturing method thereof, reaction solution, photoelectric conversion device, and solar cell: A buffer layer manufacturing method, including the steps of forming a fine particle layer of ZnS, Zn(S, O), and/or Zn(S, O, OH), mixing an aqueous solution (I) which includes a component (Z), an aqueous solution (II) which includes a component (S), and an aqueous solution (III) which includes a component... Agent: Fujifilm Corporation

20110081745 - Method of manufacturing selective emitter solar cell: The present disclosure uses ammonia plasma for nitrification and for further forming a barrier pattern on a substrate. Then, a selective emitter is fabricated by forming light doping and heavy doping at one time through diffusion into the substrate. Therein, a plurality of trenches for obtaining a front contact is... Agent:

20110081746 - Method for producing semiconductor device: A method for producing a semiconductor device includes the steps of forming an organic semiconductor layer on a substrate; forming a protective pattern on the organic semiconductor layer; and patterning the organic semiconductor layer by dissolving, in an organic solvent, or subliming the organic semiconductor layer using the protective pattern... Agent: Sony Corporation

20110081747 - Method for removing electricity and method for manufacturing semiconductor device: An object is to suppress a significant change in electrical characteristics of thin film transistors and a deviation thereof from the designed range due to static electricity, and to improve the yield in manufacturing semiconductor devices. In order to prevent a substrate from being charged with static electricity by heat... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110081748 - Methods for forming resistive-switching metal oxides for nonvolatile memory elements: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be... Agent:

20110081749 - Surface modification for handling wafer thinning process: A wafer is provided with a through via extending a portion of a substrate, an interconnect structure electrically connecting the through via, and a polyimide layer formed on the interconnect structure. Surface modification of the polyimide layer is the formation of a thin dielectric film on the polyimide layer by... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110081750 - Manufacturing method for semiconductor devices: The reliability of a semiconductor device is enhanced. A first lead frame, a first semiconductor chip, a second lead frame, and a second semiconductor chip are stacked over an assembly jig in this order with solder in between and solder reflow processing is carried out to fabricate their assembly. Thereafter,... Agent: Renesas Electronics Corporation

20110081751 - Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof: In a semiconductor device of the present invention, a first base region 16 is extended to a part under a gate electrode 7 while having a vertical concentration profile of an impurity that increases from the surface of a semiconductor layer 3 and becomes maximum under an emitter region 5,... Agent: Panasonic Corporation

20110081752 - Semiconductor device and manufacturing method thereof: A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate by a double-sided adhesive tape. Then, on the thin semiconductor wafer, a trench to become a scribing line is formed by wet... Agent: Fuji Electric Systems Co., Ltd.

20110081753 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a... Agent: Renesas Electronics Corporation

20110081754 - Methods for obtaining gate stacks with tunable threshold voltage and scaling: Methods of forming complementary metal oxide semiconductor (CMOS) structures with tunable threshold voltages are provided. The methods disclose a technique of obtaining selective placement of threshold voltage adjusting materials on a semiconductor substrate by using a block mask prior to deposition of the threshold voltage adjusting materials. The block mask... Agent: International Business Machines Corporation

20110081755 - Methods of fabricating an access transistor having a polysilicon-comprising plug on individual of opposing sides of gate material: Fabrication methods for gate transistors in integrated circuit devices enable the formation of recessed access device structures or FinFET structures having P-type workfunctions. The fabrication methods also provide for the formation of access transistor gates of an access device following formation of the periphery transistor gates. Access devices and systems... Agent: Micron Technology, Inc.

20110081757 - Memory having a vertical access device: Semiconductor memory devices having vertical access devices are disclosed. In some embodiments, a method of forming the device includes providing a recess in a semiconductor substrate that includes a pair of opposed side walls and a floor extending between the opposed side walls. A dielectric layer may be deposited on... Agent:

20110081756 - Semiconductor device having vertical mosfet and method of manufacturing the same: A method of manufacturing a semiconductor device, includes forming a first trench and a second trench in a semiconductor region of a first conductivity type simultaneously, forming a gate insulating film and a gate electrode in the first trench, forming a channel region of a second conductivity type in the... Agent: Renesas Electronics Corporation

20110081758 - Semiconductor device including i/o oxide nitrided core oxide on substrate, and method of manufacture: A semiconductor device includes a semiconductor substrate, wherein the semiconductor substrate includes a core area for core circuits and a peripheral area for peripheral circuits. The semiconductor device includes a core oxide on the semiconductor substrate in the core area, a portion of the core oxide being nitrided, a first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110081759 - Power mos electronic device and corresponding realizing method: Power MOS device of the type comprising a plurality of elementary power MOS transistors having respective gate structures and comprising a gate oxide with double thickness having a thick central part and lateral portions of reduced thickness. Such device exhibiting gate structures comprising first gate conductive portions overlapped onto said... Agent: Stmicroelectronics, S.r.l.

20110081760 - Method of manufacturing lateral diffusion metal oxide semiconductor device: A method of manufacturing a lateral diffusion metal oxide semiconductor device includes following steps. First, a substrate having a first conductive type is provided. The substrate has a well, and the well has a second conductive type. Then, a body region is formed in the well, and a channel defining... Agent:

20110081761 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first recess is formed in a semiconductor substrate to define an active region on the semiconductor substrate. The active region includes a protruding portion of the semiconductor substrate surrounded by the first... Agent: Elpida Memory, Inc.

20110081762 - Methods of fabricating non-volatile memory devices with discrete resistive memory material regions: A semiconductor memory device includes a first conductive line on a semiconductor substrate, an interlayer insulating layer on the first conductive line, a second conductive line on the interlayer insulating layer, and a memory cell in an hole through the interlayer insulating layer wherein the first and second conductive lines... Agent: Samsung Electronics Co., Ltd.

20110081763 - Process using oxide supporter for manufacturing a capacitor lower electrode of a micro stacked dram: A process using oxide supporter for manufacturing a capacitor lower electrode of a micron stacked DRAM is disclosed. First, form a stacked structure. Second, form a photoresist layer on an upper oxide layer and then etch them. Third, deposit a polysilicon layer onto the upper oxide layer and the nitride... Agent: Inotera Memories, Inc.

20110081764 - Methods for forming isolated fin structures on bulk semiconductor material: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on... Agent: Globalfoundries Inc.

20110081766 - Method for doping a selected portion of a device: A method includes forming a protective layer with an opening over a substrate, thereafter implanting a dopant into a substrate region through the opening, the protective layer protecting a different substrate region, and reducing thickness of the protective layer. A different aspect includes etching a substrate to form a recess... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110081765 - Method to improve wet etch budget in feol integration: A method of forming a semiconductor device is provided where in one embodiment an STI fill is recessed below the pad nitride and pad oxide layers, to a level substantially coplanar with the top surface of the substrate. A thin (having a thickness in the range of about 10 Å-100... Agent: International Business Machines Corporation

20110081767 - Precision trench formation through oxide region formation for a semiconductor device: Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen... Agent:

20110081768 - Workpiece dividing method: In a workpiece dividing method, an expansion tape is stuck to an adhesive film side of a workpiece in a state where an adhesive film is stuck to the rear surface of a wafer. Respective positions of the predetermined dividing lines on the front surface of the wafer are detected.... Agent: Disco Corporation

20110081769 - Method for manufacturing semiconductor device: A chip provided with a layer for separation of a surface region and a hydrophilic surface is manufactured. One or both of a hydrophilic region and a hydrophobic region are formed on a substrate surface where the chip is placed. Liquid is dropped onto the hydrophilic region on the substrate... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110081770 - Removing undesirable nanotubes during nanotube device fabrication: Fabricating single-walled carbon nanotube transistor devices includes removing undesirable types of nanotubes. These undesirable types of nanotubes may include nonsemiconducting nanotubes, multiwalled nanotubes, and others. The undesirable nanotubes may be removed electrically using voltage or current, or a combination of these. This approach to removing undesirable nanotubes is sometimes referred... Agent: Atomate Corporation

20110081771 - Multichamber split processes for led manufacturing: Embodiments described herein generally relate to methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and/or hydride vapor phase epitaxial (HVPE) processes. In one embodiment, deposition of a group III1-N layer on a substrate is performed in a first chamber, deposition of a group III2-N layer... Agent: Applied Materials, Inc.

20110081772 - Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations: Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on the floating guard rings and a silicon carbide surface... Agent:

20110081773 - Method for forming a shielded gate trench fet: A method for forming a shielded gate field effect transistor (FET) includes forming a plurality of trenches in a semiconductor region and forming a shield electrode in a bottom portion of each trench. The method also includes forming a dielectric layer comprising a first oxide layer and a nitride layer... Agent:

20110081775 - Method for adjusting the threshold voltage of a gate stack of a pmos device: A method for fabricating a semiconductor device comprising a gate stack of a gate dielectric and a gate electrode, the method including forming a gate dielectric layer over a semiconductor substrate the gate dielectric layer being a metal oxide or semimetal oxide having a first electronegativity; forming a dielectric VT... Agent:

20110081774 - Methods for a gate replacement process: A method for fabricating a semiconductor device is disclosed. In one embodiment, the method may include providing a substrate; forming a gate structure including a first dummy gate over the substrate; removing the first dummy gate from the gate structure to form a trench; forming an interfacial layer, high-k dielectric... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110081776 - Method for manufacturing semiconductor device: A first insulating film is formed on or above a substrate, and a first conductor is formed in an upper portion of the formed first insulating film. Then, a second insulating film is formed on the first insulating film so as to cover the first conductor. Then, a film quality... Agent:

20110081777 - Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern: Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern are provided, the methods include forming a self-assembly induction layer including a first region and a second region on a semiconductor substrate. A block copolymer layer is coated on the self-assembly induction layer. A first... Agent: Samsung Electronics Co., Ltd.

20110081778 - Semiconductor device having fine pattern wiring lines integrally formed with contact plug and method of manufacturing same: A semiconductor device and method are disclosed in which an interlayer insulating layer is patterned using multiple overlaying masks to define the geometry of contact plugs and corresponding wiring layers separated by fine pitches.... Agent: Samsung Electronics Co., Ltd.

20110081779 - Method and apparatus for material deposition: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to... Agent: Lam Research Corporation

20110081780 - Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method: A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a signal area of a 29Si-NMR spectrum being 2.0 to 3.0×1021/g.... Agent: Jsr Corporation

20110081781 - Method for manufacturing semiconductor: A method for manufacturing a semiconductor device includes forming a first stress film covering a first transistor arranged in a first region and a second transistor arranged in a second region on a semiconductor substrate; forming an etching stopper film, which possesses etching characteristics different from etching characteristics of the... Agent: Fujitsu Semiconductor Limited

20110081782 - Post-planarization densification: Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow... Agent: Applied Materials, Inc.

20110081783 - Showerhead electrode assemblies for plasma processing apparatuses: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact points across the... Agent: Lam Research Corporation

20110081784 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device includes: forming step of forming an etching mask on a second main face of a substrate, the etching mask being made of Cu or Cu alloy and having an opening, the second main face being on an opposite side of a first main... Agent: Sumitomo Electric Device Innovations, Inc.

20110081785 - Solution for the selective removal of metal from aluminum substrates: The present disclosure relates to a solution for selectively removing metal, such as Ta or TaN, from a substrate, such as an aluminum containing substrate. The solution comprises an acid, such as HF or buffered HF, an ingredient comprising a fluorine ion, such as ammonium fluoride (NH4F), ethylene glycol, and... Agent:

20110081786 - Methods of reducing defect formation on silicon dioxide formed by atomic layer deposition (ald) processes: Methods for reducing and inhibiting defect formation on silicon dioxide formed by atomic layer deposition (ALD) are disclosed. Defect reduction is accomplished by performing processing on the silicon dioxide subsequent to deposition by ALD. The post-deposition processing may include at least one of a pump/purge cycle and a water exposure... Agent: Micron Technology, Inc.

20110081787 - Plasma processing method and apparatus: With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power... Agent: