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Scott Sills patents

Recent patents with Scott Sills listed as an inventor - additional entries may be under other spellings.


Scott Sills - Related organizations: Sony Corporation patents, Micron Technology, Inc. patents, Nanya Technology Corporation patents

Interfacial cap for electrode contacts in memory cell arrays

06/23/16 - 20160181519 - Exemplary embodiments of the present invention are directed towards a method for fabricated a memory cell comprising depositing a material to form an interface cap above a bulk conductive plug and below active cell materials in the memory cell.
Inventors: Scott Sills, Beth Cook, Nirmal Ramaswamy

Resistive memory with a thermally insulating region

04/14/16 - 20160104840 - A resistive memory includes a memory cell having a first electrode, a second electrode and a resistive memory element between the first electrode and the second electrode. The memory cell includes a thermally insulating region. The thermally insulating region may be included in at least one electrode of the memory
Inventors: Beth Cook, Nirmal Ramaswamy, Shuichiro Yasuda, Scott Sills, Koji Miyata

Interfacial cap for electrode contacts in memory cell arrays

07/09/15 - 20150194601 - Exemplary embodiments of the present invention are directed towards a method for fabricated a memory cell comprising depositing a material to form an interface cap above a bulk conductive plug and below active cell materials in the memory cell.
Inventors: Scott Sills, Beth Cook, Nirmal Ramaswamy

Method for providing electrical connections to spaced conductive lines

06/18/15 - 20150171090 - An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material
Inventors: Gurtej Sandhu, Scott Sills

Methods of fabricating substrates

11/13/14 - 20140335694 - A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first
Inventors: Scott Sills, Gurtej S. Sandhu, Anton Devilliers

Integrated circuit system with non-volatile memory and method of manufacture thereof

10/16/14 - 20140306172 - An integrated circuit system, and a method of manufacture thereof, including: an integrated circuit die having an address switch; a bottom electrode contact, free of halogen constituents, characteristic of a chemical vapor deposition or an atomic layer deposition, and coupled to the address switch; a transition material layer directly on
Inventors: Scott Sills, Muralikrishnan Balakrishnan, Beth Cook, Durai Vishak Nirmal Ramaswamy, Shuichiro Yasuda

Method for providing electrical connections to spaced conductive lines

08/14/14 - 20140225264 - An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material
Inventors: Gurtej Sandhu, Scott Sills

Method for providing electrical connections to spaced conductive lines

04/03/14 - 20140094026 - An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material
Inventors: Gurtej Sandhu, Scott Sills

Method for forming patterns of dense conductor lines and their contact pads, and memory array having dense conductor lines and contact pads

11/21/13 - 20130307166 - A method for forming patterns of dense conductor lines and their contact pads is described. Parallel base line patterns are formed over a substrate. Each of the base line patterns is trimmed. Derivative line patterns and derivative transverse patterns are formed as spaces on the sidewalls of the trimmed base
Inventors: Jonathan Doebler, Scott Sills

Permutational memory cells

11/14/13 - 20130301336 - Various embodiments comprise apparatuses having at least two resistance change memory (RCM) cells. In one embodiment, an apparatus includes at least two electrical contacts coupled to each of the RCM cells. A memory cell material is disposed between pairs of each of the electrical contacts coupled to each of the
Inventors: Scott Sills

Multi-function resistance change memory cells and apparatuses including the same

09/26/13 - 20130250651 - Various embodiments comprise apparatuses having a number of memory cells including drive circuitry to provide signal pulses of a selected time duration and/or amplitude, and an array of resistance change memory cells electrically coupled to the drive circuitry. The resistance change memory cells may be programmed for a range of
Inventors: Scott Sills

Method for providing electrical connections to spaced conductive lines

08/15/13 - 20130210230 - An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material
Inventors: Gurtej Sandhu, Scott Sills

Methods of forming patterns

04/25/13 - 20130102160 - Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material
Inventors: Scott Sills, Gurtej Sandhu, John Smythe, Ming Zhang

Methods of lithographically patterning a substrate

03/07/13 - 20130059255 - A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a
Inventors: Yoshiki Hishiro, Scott Sills, Hiroyuki Mori, Troy Gugel, Paul D. Shirley, Lijing Gou, Adam Olson

Methods of fabricating substrates

12/20/12 - 20120322269 - A method of fabricating a substrate includes forming first and second spaced features over a substrate. The first spaced features have elevationally outermost regions which are different in composition from elevationally outermost regions of the second spaced features. The first and second spaced features alternate with one another. Every other
Inventors: Scott Sills, Gurtej S. Sandhu, Anton Devilliers

Methods of utilizing block copolymers to form patterns

12/13/12 - 20120315769 - Some embodiments include methods of forming patterns utilizing copolymer. A copolymer composition is formed across a substrate. The composition includes subunits A and B, and will be self-assembled to form core structures spaced center-to-center by a distance of L0. The core structures are contained within a repeating pattern of polygonal
Inventors: Scott Sills

Methods of fabricating substrates

11/22/12 - 20120295445 - A method of fabricating a substrate includes forming spaced first features and spaced second features over a substrate. The first and second features alternate with one another and are spaced relative one another. Width of the spaced second features is laterally trimmed to a greater degree than any lateral trimming
Inventors: Scott Sills, Gurtej S. Sandhu, Anton Devilliers

Epitaxial growth method and devices

10/11/12 - 20120256191 - Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without
Inventors: Anton Devilliers, Erik Byers, Scott Sills

Methods of forming patterns on substrates

09/20/12 - 20120237880 - A method of forming a pattern on a substrate includes forming spaced first features over a substrate. The spaced first features have opposing lateral sidewalls. Material is formed onto the opposing lateral sidewalls of the spaced first features. That portion of such material which is received against each of the
Inventors: Scott Sills, Gurtej S. Sandhu

Cross-point memory structures

09/20/12 - 20120235211 - Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal direction, a multi-sided container of access device materials over the first electrode material, a memory element material within the multi-sided container, and a line of second electrode material over
Inventors: Scott Sills, Gurtej S. Sandhu

Pitch division patterning techniques

07/19/12 - 20120181705 - Embodiments of the invention comprise pitch division techniques to extend the capabilities of lithographic techniques beyond their minimum pitch. The pitch division techniques described herein employ additional processing to ensure pitch divided lines have the spatial isolation necessary to prevent shorting problems. The pitch division techniques described herein further employ
Inventors: Sanh D. Tang, Scott Sills, Haitao Liu

Methods of forming patterns

06/07/12 - 20120141943 - Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material
Inventors: Scott Sills, Gurtej S. Sandhu, John Smythe, Ming Zhang

Methods of forming patterns

03/29/12 - 20120077127 - Some embodiments include methods of forming patterns in which a block copolymer-containing composition is formed over a substrate, and is then patterned to form a first mask. The block copolymer of the composition is subsequently induced into forming a repeating pattern within the first mask. Portions of the repeating pattern
Inventors: Scott Sills, Dan Millward

Methods of forming patterns, and methods of forming integrated circuits

02/23/12 - 20120045891 - Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to
Inventors: Dan Millward, Scott Sills

Method for providing electrical connections to spaced conductive lines

01/12/12 - 20120009784 - An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material
Inventors: Gurtej Sandhu, Scott Sills

Epitaxial growth method and devices

12/29/11 - 20110316021 - Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without
Inventors: Anton Devilliers, Eric Byers, Scott Sills

Cross-point memory structures

12/08/11 - 20110298014 - Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal direction, a multi-sided container of access device materials over the first electrode material, a memory element material within the multi-sided container, and a line of second electrode material over
Inventors: Scott Sills, Gurtej S. Sandhu

Methods of forming patterns on substrates

12/08/11 - 20110297646 - A method of forming a pattern on a substrate includes forming spaced features over a substrate. A polymer is adsorbed to outer lateral surfaces of the spaced features. Either material of the spaced features is removed selectively relative to the adsorbed polymer or material of the adsorbed polymer is removed
Inventors: Anton Devillers, Scott Sills

Methods of utilizing block copolymer to form patterns

11/10/11 - 20110272381 - Some embodiments include methods of forming patterns. A block copolymer film may be formed over a substrate, with the block copolymer having an intrinsic glass transition temperature (Tg,0) and a degradation temperature (Td). A temperature window may be defined to correspond to temperatures (T) within the range of Tg,0≦T≦Td. While
Inventors: Dan Millward, Scott Sills

Methods of forming patterns, and methods of forming integrated circuits

10/13/11 - 20110250745 - Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to
Inventors: Dan Millward, Scott Sills

Solid state lighting devices with cellular arrays and associated methods of manufacturing

09/29/11 - 20110233581 - Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material
Inventors: Scott Sills, Lifang Xu, Scott Schellhammer, Thomas Gehrke, Zaiyuan Ren, Anton De Villiers

Light emitting diodes and associated methods of manufacturing

08/11/11 - 20110193115 - Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and
Inventors: Scott Schellhammer, Scott Sills, Lifang Xu, Thomas Gehrke, Zaiyuan Ren, Anton De Villiers

Pitch division patterning techniques

06/23/11 - 20110151668 - Embodiments of the invention comprise pitch division techniques to extend the capabilities of lithographic techniques beyond their minimum pitch. The pitch division techniques described herein employ additional processing to ensure pitch divided lines have the spatial isolation necessary to prevent shorting problems. The pitch division techniques described herein further employ
Inventors: Sanh D. Tang, Scott Sills, Haitao Liu

Methods of utilizing block copolymers to form patterns

05/19/11 - 20110117733 - Some embodiments include methods of forming patterns utilizing copolymer. A copolymer composition is formed across a substrate. The composition includes subunits A and B, and will be self-assembled to form core structures spaced center-to-center by a distance of L0. The core structures are contained within a repeating pattern of polygonal
Inventors: Scott Sills

Methods of utlizing block copolymer to form patterns

12/23/10 - 20100323096 - Some embodiments include methods of forming patterns utilizing copolymer. A main body of copolymer may be formed across a substrate, and self-assembly of the copolymer may be induced to form a pattern of structures across the substrate. A uniform thickness throughout the main body of the copolymer may be maintained
Inventors: Scott Sills, Dan Millward

Method for providing electrical connections to spaced conductive lines

11/25/10 - 20100295183 - An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material
Inventors: Gurtej Sandhu, Scott Sills

Methods of forming patterns on substrates

09/23/10 - 20100239983 - A method of forming a pattern on a substrate includes forming spaced first features over a substrate. The spaced first features have opposing lateral sidewalls. Material is formed onto the opposing lateral sidewalls of the spaced first features. That portion of such material which is received against each of the
Inventors: Scott Sills, Gurtej S. Sandhu

Methods of forming patterns

09/09/10 - 20100227281 - Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material
Inventors: Scott Sills, Gurtej S. Sandhu, John Smythe, Ming Zhang

Cross-point memory structures, and methods of forming memory arrays

08/19/10 - 20100207168 - Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal direction, a multi-sided container of access device materials over the first electrode material, a memory element material within the multi-sided container, and a line of second electrode material over
Inventors: Scott Sills, Gurtej S. Sandhu

Methods of fabricating substrates

06/10/10 - 20100144153 - A method of fabricating a substrate includes forming spaced first features and spaced second features over a substrate. The first and second features alternate with one another and are spaced relative one another. Width of the spaced second features is laterally trimmed to a greater degree than any lateral trimming

Methods of fabricating substrates

06/10/10 - 20100144151 - A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first

Methods of fabricating substrates

06/10/10 - 20100144150 - A method of fabricating a substrate includes forming first and second spaced features over a substrate. The first spaced features have elevationally outermost regions which are different in composition from elevationally outermost regions of the second spaced features. The first and second spaced features alternate with one another. Every other

Block copolymer-comprising compositions and methods of purifying ps-b-pxvp

06/03/10 - 20100137496 - In one embodiment, a block copolymer-containing composition includes PS-b-PXVP and a lithium salt, where “X” is 2 or 4. All lithium salt is present in the composition at no greater than 1 ppm by weight. In one embodiment, a homogenous block copolymer-including comprising has PS-b-PXVP present in the composition at

Methods of forming patterns utilizing lithography and spacers

04/15/10 - 20100093175 - Some embodiments include methods of forming patterns. A first set of features is photolithographically formed over a substrate, and then a second set of features is photolithographically formed over the substrate. At least some of the features of said second set alternate with features of the first set. Spacer material

Methods of utilizing block copolymer to form patterns

04/15/10 - 20100092873 - Some embodiments include methods of forming patterns in which a block copolymer-containing composition is formed over a substrate, and is then patterned to form a first mask. The block copolymer of the composition is subsequently induced into forming a repeating pattern within the first mask. Portions of the repeating pattern

Methods of lithographically patterning a substrate

04/09/09 - 20090092933 - A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a


### Scott Sills patent invention listings

The bibliographic references displayed about Scott Sills's patents are for a recent sample of Scott Sills's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Scott Sills filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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