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Satoru Hanzawa patents

Recent bibliographic sampling of Satoru Hanzawa patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title):



12/11/14 - 20140361241 - Semiconductor storage device and method for manufacturing same
Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substrate; a first word line (2) which is provided above the substrate; a first laminated body,...
Inventors: Yoshitaka Sasago, Akio Shima, Satoru Hanzawa, Takashi Kobayashi, Masaharu Kinoshita, Norikatsu Takaura (Hitachi, Ltd.)

08/28/14 - 20140241051 - Semiconductor device and its manufacturing method
In a semiconductor device including a memory cell array formed of memory cells using a storage element by a variable resistor and a select transistor, a buffer cell is arranged between a sense amplifier and the memory cell array and between a word driver and the memory cell array. The...
Inventors: Satoru Hanzawa, Fumihiko Nitta, Nozomu Matsuzaki, Toshihiro Tanaka (Renesas Electronics Corporation)

04/17/14 - 20140103287 - Semiconductor storage device and method for manufacturing same
Disclosed are a semiconductor storage device and a manufacturing method. The storage device has: a substrate; a first word line above the substrate; a first laminated body above the first word line and having N+1 first inter-gate insulating layers and N first semiconductor layers alternately laminated; a first bit line...
Inventors: Yoshitaka Sasago, Akio Shima, Satoru Hanzawa, Takashi Kobayashi, Masaharu Kinoshita, Norikatsu Takaura (Hitachi, Ltd.)

02/27/14 - 20140056062 - Semiconductor storage apparatus or semiconductor memory module
A semiconductor storage apparatus provides a large capacity phase-change memory possessing high speed operation, low electrical current, and high-reliability. During the period that a read-out start signal is activated in the memory region control circuit and the block of pairs of sense-latch and write driver is performing the verify read...
Inventors: Satoru Hanzawa (Hitachi, Ltd.)

10/24/13 - 20130277635 - Semiconductor device and its manufacturing method
In a semiconductor device including a memory cell array formed of memory cells using a storage element by a variable resistor and a select transistor, a buffer cell is arranged between a sense amplifier and the memory cell array and between a word driver and the memory cell array. The...
Inventors: Satoru Hanzawa, Fumihiko Nitta, Nozomu Matsuzaki, Toshihiro Tanaka

06/06/13 - 20130141968 - Semiconductor storage device
The purpose of the present invention is to improve a rewriting transmission rate and reliability of a phase change memory. To attain the purpose, a plurality of phase change memory cells (SMC or USMC) which are provided in series between a word line (2) and a bit line (3) and...
Inventors: Yoshitaka Sasago, Hiroyuki Minemura, Takashi Kobayashi, Toshimichi Shintani, Satoru Hanzawa, Masaharu Kinoshita

11/15/12 - 20120287697 - Semiconductor storage device
A semiconductor storage device crystallizes variable resistive element material layers arranged on side surfaces of multiple semiconductor layers in a stacked structure concurrently by applying a first current to any one of semiconductor layers in the stacked structure, and thereafter applies a second current to semiconductor layers other than a...
Inventors: Satoru Hanzawa, Hiroyuki Minemura (Hitachi, Ltd.)

10/25/12 - 20120268981 - Semiconductor device and its manufacturing method
In a semiconductor device including a memory cell array formed of memory cells using a storage element by a variable resistor and a select transistor, a buffer cell is arranged between a sense amplifier and the memory cell array and between a word driver and the memory cell array. The...
Inventors: Satoru Hanzawa, Fumihiko Nitta, Nozomu Matsuzaki, Toshihiro Tanaka (Renesas Electronics Corporation)

10/04/12 - 20120248399 - Semiconductor storage device and method for manufacturing same
Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substrate; a first word line (2) which is provided above the substrate; a first laminated body,...
Inventors: Yoshitaka Sasago, Akio Shima, Satoru Hanzawa, Takashi Kobayashi, Masaharu Kinoshita, Norikastsu Takaura

08/23/12 - 20120211718 - Semiconductor storage device
There is provided a semiconductor storage device which is capable of further reducing a size of a memory cell, and increasing a storage capacity. Plural memory cells each including a transistor formed on a semiconductor substrate, and a variable resistive device having a resistance value changed by voltage supply and...
Inventors: Akio Shima, Yoshitaka Sasago, Masaharu Kinoshita, Toshiyuki Mine, Norikatsu Takaura, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa (Hitachi, Ltd.)

06/21/12 - 20120155162 - Semiconductor storage apparatus or semiconductor memory module
A semiconductor storage apparatus provides a large capacity phase-change memory possessing high speed operation, low electrical current, and high-reliability. During the period that a read-out start signal is activated in the memory region control circuit and the block of pairs of sense-latch and write driver is performing the verify read...
Inventors: Satoru Hanzawa (Hitachi, Ltd.)

05/31/12 - 20120137058 - Semiconductor device
A high-speed large-capacity phase-change memory is achieved. A semiconductor device according to the present invention includes: a plurality of memory planes MP; a plurality of storage information register groups SDRBK paired with the plurality of memory planes; and a chip control circuit CPCTL. The plurality of memory planes include a...
Inventors: Satoru Hanzawa (Hitachi, Ltd.)

05/31/12 - 20120135548 - Semiconductor device
A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogenide material and a memory cell constituted of a diode are stacked, and an initialization condition and...
Inventors: Satoru Hanzawa, Hitoshi Kume, Motoyasu Terao, Tomonori Sekiguchi, Makoto Saen (Hitachi, Ltd.)

05/31/12 - 20120134203 - Semiconductor device and data processing system
In a phase change memory, when M bit (8 bits=1 byte) data is written, erase operation and program operation are performed in units of n bit (M>n) data. Further, when M bit data is written, program operation is performed in units of the n bit (M>n) data. Further, when M...
Inventors: Seiji Miura, Satoru Hanzawa (Hitachi, Ltd.)

04/12/12 - 20120087178 - Semiconductor memory device
Adverse effects of a parasitic resistance and a parasitic capacitance of a driver circuit to a memory cell causes problems of thermal disturbance to a not-selected cell, unevenness of application voltage, degradation of a memory element in reading. A capacitor (C) is provided above or beneath a memory cell (MC)...
Inventors: Takao Watanabe, Satoru Hanzawa, Yoshitaka Sasago (Hitachi, Ltd.)

03/29/12 - 20120075926 - Semiconductor device
A phase change memory capable of highly reliable operations is provided. A semiconductor device has a memory array having a structure in which memory cells are stacked including memory layers using a chalcogenide material and diodes, and initialization conditions and write conditions are changed according to the layer in which...
Inventors: Satoru Hanzawa, Hitoshi Kume (Hitachi, Ltd.)

12/01/11 - 20110292722 - Semiconductor device
A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogcnidc material and a memory cell constituted of a diode are stacked, and an initialization condition and...
Inventors: Satoru Hanzawa, Hitoshi Kume, Motoyasu Terao, Tomonori Sekiguchi, Makoto Saen (Hitachi, Ltd.)

11/17/11 - 20110283039 - Semiconductor device
To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a...
Inventors: Motoyasu Terao, Satoru Hanzawa, Hitoshi Kume, Minoru Ogushi, Yoshitaka Sasago, Masaharu Kinoshita, Norikatsu Takaura (Hitachi, Ltd.)

11/10/11 - 20110273927 - Semiconductor device
A semiconductor device has multiple memory cell groups arranged at intersections between multiple word lines and multiple bit lines intersecting the word lines. The memory cell groups each have first and second memory cells connected in series. Each of the first and the second memory cells has a select transistor...
Inventors: Satoru Hanzawa, Yoshitska Sasago (Hitachi, Ltd.)

10/06/11 - 20110242872 - Semiconductor device
A highly-reliable, highly-integrated large-capacity phase-change memory is achieved. For this purpose, for example, memory tiles MT0, MT1 are provided respectively at points of intersection of global bit line GBL0 and global word lines GWL00B, GWL01B. Word lines WL000 of MT0, MT1 are commonly connected to an output from a word-line...
Inventors: Satoru Hanzawa (Hitachi, Ltd.)

09/08/11 - 20110216583 - Semiconductor device
A phase change memory capable of highly reliable operations is provided. A semiconductor device has a memory array having a structure in which memory cells are stacked including memory layers using a chalcogenide material and diodes, and initialization conditions and write conditions are changed according to the layer in which...
Inventors: Satoru Hanzawa, Hitoshi Kume (Hitachi, Ltd.)

09/01/11 - 20110211390 - Semiconductor device and its manufacturing method
A technique capable of manufacturing a semiconductor device without posing contamination in a manufacturing apparatus regarding a phase change memory including a memory cell array formed of memory cells using a storage element (RE) by a variable resistor and a select transistor (CT). A buffer cell is arranged between a...
Inventors: Satoru Hanzawa, Fumihiko Nitta, Nozomu Matsuzaki, Toshihiro Tanaka (Renesas Technology Crop.)

05/12/11 - 20110110150 - Semiconductor device
A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogenide material and a memory cell constituted of a diode are stacked, and an initialization condition and...
Inventors: Satoru Hanzawa, Hitoshi Kume, Motoyasu Terao, Tomonori Sekiguchi, Makoto Sean (Hitachi, Ltd.)

05/05/11 - 20110103142 - Semiconductor device
In a memory array MCA which includes memory cells MC each having a variable-resistance-based memory device RQ and a select transistor MQ, an object is to receive a fixed quantity of storage data for a short time, and to realize writing operation to the memory cell, with suppressed peak current....
Inventors: Satoru Hanzawa, Yoshikazu Iida (Renesas Electronics Corporation)

01/20/11 - 20110013447 - Semiconductor device
A phase change memory capable of highly reliable operations is provided. A semiconductor device has a memory array having a structure in which memory cells are stacked including memory layers using a chalcogenide material and diodes, and initialization conditions and write conditions are changed according to the layer in which...
Inventors: Satoru Hanzawa, Hitoshi Kume (Hitachi, Ltd.)

12/16/10 - 20100315895 - Semiconductor device
A dummy cell includes a plurality of first memory cells MC for storing “1” or “0”, arranged at points of intersection between a plurality of word lines WR0 to WR7 and a plurality of first data lines D0 to D7, a plurality of first dummy cells MCH for storing “1”...
Inventors: Satoru Hanzawa, Takeshi Sakata

08/26/10 - 20100214828 - Semiconductor device
In a memory array MCA which includes memory cells MC each having a variable-resistance-based memory device RQ and a select transistor MQ, an object is to receive a fixed quantity of storage data for a short time, and to realize writing operation to the memory cell, with suppressed peak current....
Inventors: Satoru Hanzawa, Yoshikazu Iida (Renesas Technology Corp.)

07/29/10 - 20100188877 - Storage device
The object of the invention is to avoid an unselected data line being driven in a memory array composed of memory cells each of which uses a storage element depending upon variable resistance and a selection transistor when the selection transistors in all memory cells on a selected word line...
Inventors: Satoru Hanzawa, Kiyoo Itoh, Hideyuki Matsuoka, Motoyasu Terao, Takeshi Sakata (Hitachi, Ltd.)

07/22/10 - 20100182828 - Semiconductor storage device
There is provided a semiconductor storage device which is capable of further reducing a size of a memory cell, and increasing a storage capacity. Plural memory cells each including a transistor formed on a semiconductor substrate, and a variable resistive device having a resistance value changed by voltage supply and...
Inventors: Akio Shima, Yoshitaka Sasago, Masaharu Kinoshita, Toshiyuki Mine, Norikatsu Takaura, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa (Hitachi, Ltd.)

03/25/10 - 20100073999 - Semiconductor integrated circuit
In a readout circuit (RC) which detects a difference between a change that appears on a first signal line (CBL) and a change that appears on a second signal line (CBLdm) according to stored information of each selected memory cell, the first signal line and the second signal line are...
Inventors: Naoki Kitai, Satoru Hanzawa, Akira Kotabe

03/25/10 - 20100072451 - Semiconductor device
A recording layer 52 made of a chalcogenide material which stores a high-resistance state of a high electrical resistance value and a low-resistance state of a low electrical resistance value is used as a memory element RM in a memory cell region, and it is formed so that a concentration...
Inventors: Motoyasu Terao, Satoru Hanzawa, Takahiro Morikawa, Kenzo Kurotsuchi, Riichiro Takemura, Norikatsu Takaura, Nozomu Matsuzaki

03/11/10 - 20100061132 - Semiconductor storage device
In a semiconductor storage device such as a phase change memory, a technique which can realize high integration is provided. The semiconductor storage device includes a phase change thin film 101 having two stable phases of a crystal state with low electric resistance and an amorphous state with high electric...
Inventors: Yoshihisa Fujisaki, Satoru Hanzawa, Kenzo Kurotsuchi, Nozomu Matsuzaki, Norikatsu Takaura

03/04/10 - 20100058127 - Semiconductor device
To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a...
Inventors: Motoyasu Terao, Satoru Hanzawa, Hitoshi Kume, Minoru Ogushi, Yoshitaka Sasago, Masaharu Kinoshita, Norikatsu Takaura (Hitachi, Ltd.)

09/24/09 - 20090238013 - Semiconductor device
A dummy cell includes a plurality of first memory cells MC for storing “1” or “0”, arranged at points of intersection between a plurality of word lines WR0 to WR7 and a plurality of first data lines D0 to D7, a plurality of first dummy cells MCH for storing “1”...
Inventors: Inventors: Satoru Hanzawa, Hitoshi Kume, Motoyasu Terao, Tomonori Sekiguchi, Makoto SaenSatoru Hanzawa, Hitoshi Kume, Motoyasu Terao, Tomonori Sekiguchi, Makoto Saen, Satoru Hanzawa, Takeshi Sakata (Hitachi, Ltd.)

07/02/09 - 20090168505 - Semiconductor device
A phase change memory capable of highly reliable operations is provided. A semiconductor device has a memory array having a structure in which memory cells are stacked including memory layers using a chalcogenide material and diodes, and initialization conditions and write conditions are changed according to the layer in which...
Inventors: Satoru Hanzawa, Hitoshi Kume (Hitachi, Ltd.)

06/11/09 - 20090150604 - Semiconductor device
The range-specified IP addresses are effectively stored to reduce the number of necessary entries thereby the memory capacity of TCAM is improved. The representative means of the present invention is that: the storage information (entry) and the input information (comparison information or search key) are the common block code such...
Inventors: Satoru Hanzawa, Takeshi Sakata, Kazuhiko Kajigaya (Elpida Memory, Inc.)

05/07/09 - 20090116309 - Semiconductor device
A column circuit that amplifies signals read from a sense amplifier array SAA to local input/output lines LIO in sub-amplifiers SAMP to transfer the amplified signals to main input/output lines MIO is provided. A current control circuit IC that can set one of two kinds of currents according to read...
Inventors: Satoru Hanzawa, Tomonori Sekiguchi, Riichiro Takemura, Satoru Akiyama, Kazuhiko Kajigaya (Elpida Memory, Inc.)

Hitachi, Ltd., Renesas Electronics Corporation, Renesas Technology Crop., Renesas Technology Corp., Elpida Memory, Inc.

Archived*
(*May have duplicates - we are upgrading our archive.)

20120248399 - Semiconductor storage device and method for manufacturing same


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The bibliographic references displayed about Satoru Hanzawa's patents are for a recent sample of Satoru Hanzawa's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Satoru Hanzawa filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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