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Ryo Hayashi patents

Recent patents with Ryo Hayashi listed as an inventor - additional entries may be under other spellings.


Ryo Hayashi - Related organizations: Canon Kabushiki Kaisha patents

Light emitting display apparatus

12/08/16 - 20160358990 - There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light
Inventors: Yoshinori Tateishi, Masato Ofuji, Hideya Kumomi, Ryo Hayashi

Light emitting display apparatus

12/24/15 - 20150372069 - There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light
Inventors: Yoshinori Tateishi, Masato Ofuji, Hideya Kumomi, Ryo Hayashi

Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor

11/05/15 - 20150318405 - A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as
Inventors: Ryo Hayashi, Masafumi Sano, Katsumi Abe, Hideya Kumomi, Kojiro Nishi

Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus

03/26/15 - 20150084048 - Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6),
Inventors: Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta

Thin film transistor circuit, light emitting display apparatus, and driving method thereof

05/08/14 - 20140125712 - In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having
Inventors: Hisae Shimizu, Katsumi Abe, Ryo Hayashi

Light emitting display apparatus

02/13/14 - 20140042441 - There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light
Inventors: Yoshinori Tateishi, Masato Ofuji, Hideya Kumomi, Ryo Hayashi

Semiconductor device and method of driving the same

08/22/13 - 20130214854 - Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor
Inventors: Katsumi Abe, Hideya Kumomi, Ryo Hayashi, Tatsuya Iwasaki

Amorphous oxide semiconductor and thin film transistor using the same

08/15/13 - 20130207106 - There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm−3 or more to 1×1022 cm−3 or less, and a density of bonds between oxygen and
Inventors: Ryo Hayashi, Hideyuki Omura, Hideya Kumomi, Yuzo Shigesato

Driving circuit of display element and image display apparatus

05/23/13 - 20130127812 - A new driving circuit is provided. The driving circuit according to the present invention comprises a first period for setting a current to be supplied to a display element, a second period for setting a gray-scale of the display element, and a third period for supplying a driving current to
Inventors: Katsumi Abe, Masafumi Sano, Ryo Hayashi, Hideya Kumomi

Semiconductor device and method for manufacturing the same

11/08/12 - 20120282742 - A method for manufacturing a silicon semiconductor device includes the steps of diluting a silicon-containing raw material gas with hydrogen gas by a factor equal to or larger than 600, applying radiofrequency power to a gas mixture of the diluted raw material gas and hydrogen gas to induce electric discharge,
Inventors: Koichi Matsuda, Ryo Hayashi, Shinji Kodaira

Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus

07/05/12 - 20120168750 - Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6),
Inventors: Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta

Channel-etch type thin film transistor and method of manufacturing the same

06/21/12 - 20120153277 - A channel layer is formed on a substrate by using an oxide semiconductor and then a sacrificial layer of an oxide containing In, Zn and Ga and representing an etching rate greater than the etching rate of the oxide semiconductor is formed on the channel layer. Thereafter, a source electrode
Inventors: Seiichiro Yaginuma, Tatsuya Iwasaki, Ryo Hayashi, Hideya Kumomi, Masaya Watanabe

Amorphous oxide semiconductor, semiconductor device, thin film transistor and display device

06/14/12 - 20120146021 - where 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≠0.
Inventors: Hisato Yabuta, Ayanori Endo, Nobuyuki Kaji, Ryo Hayashi

Thin film transistor having a two-layer semiconductor, manufacturing method therefor, and display apparatus using the same

05/31/12 - 20120132911 - A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with
Inventors: Mikio Shimada, Ryo Hayashi, Hideya Kumomi

Amorphous oxide semiconductor and thin film transistor using the same

05/10/12 - 20120115276 - There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm−3 or more to 1×1022 cm−3 or less, and a density of bonds between oxygen and
Inventors: Ryo Hayashi, Hideyuki Omura, Hideya Kumomi, Yuzo Shigesato

Top gate thin film transistor and display apparatus including the same

02/09/12 - 20120032173 - Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn,
Inventors: Ayumu Sato, Hideya Kumomi, Hisato Yabuta, Ryo Hayashi, Yasuyoshi Takai

Electronic device, method of isolating elements of electronic device, method of producing electronic device, and display apparatus including electronic device

01/12/12 - 20120007085 - An electronic device includes: multiple electronic elements each including a semiconductor film; and an element isolation region provided between adjacent ones of the multiple electronic elements, the element isolation region including a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode,
Inventors: Sho Suzuki, Katsumi Abe, Ryo Hayashi, Hideya Kumomi

Method for forming semiconductor film, method for forming semiconductor device and semiconductor device

12/22/11 - 20110309356 - A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and
Inventors: Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi

Method of driving transistor and device including transistor driven by the method

07/21/11 - 20110175674 - Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer
Inventors: Hisae Shimizu, Katsumi Abe, Ryo Hayashi

X-ray detector and method for manufacturing the same

07/14/11 - 20110168905 - An X-ray detector includes an X-ray photoelectric conversion layer configured to produce electric charges in proportion to X-ray irradiation incident on the layer, a collecting electrode configured to collect the electric charges produced by the X-ray photoelectric conversion layer, a common electrode disposed on a surface of the X-ray photoelectric
Inventors: Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi, Masatoshi Watanabe, Taihei Mukaide, Kazunori Fukuda

Light emitting display apparatus

05/05/11 - 20110101346 - There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light
Inventors: Yoshinori Tateishi, Masato Ofuji, Hideya Kumomi, Ryo Hayashi

Method of treating semiconductor element

04/21/11 - 20110092016 - In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor
Inventors: Masato Ofuji, Katsumi Abe, Hisae Shimizu, Ryo Hayashi, Masafumi Sano, Hideya Kumomi, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko

Method for controlling threshold voltage of semiconductor element

03/31/11 - 20110076790 - A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of
Inventors: Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi

Thin film transistor

03/31/11 - 20110073856 - To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in
Inventors: Ayumu Sato, Hideya Kumomi, Ryo Hayashi, Tomohiro Watanabe

Electron device using oxide semiconductor and method of manufacturing the same

03/17/11 - 20110065269 - In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors
Inventors: Ryo Hayashi, Masafumi Sano

Method for manufacturing semiconductor device or apparatus, and apparatus for manufacturing the same

03/17/11 - 20110065216 - A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking
Inventors: Nobuyuki Kaji, Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi

Semiconductor device and display apparatus

03/17/11 - 20110062441 - Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an
Inventors: Hisato Yabuta, Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi

Thin film transistor, display device using thin film transistor, and production method of thin film transistor

03/03/11 - 20110049509 - Provided is a thin film transistor including: a first gate electrode; a first gate insulating layer covering the first gate electrode; a semiconductor layer on the first gate insulating layer; a second gate insulating layer on the semiconductor layer; a second gate electrode on the second gate insulating layer; and
Inventors: Kenji Takahashi, Ryo Hayashi, Seiichiro Yaginuma

Thin film transistor and method of manufacturing the same

02/24/11 - 20110042670 - Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including
Inventors: Ayumu Sato, Ryo Hayashi, Hisato Yabuta, Masafumi Sano

Thin film transistor circuit, light emitting display apparatus, and driving method thereof

01/06/11 - 20110001747 - In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having
Inventors: Hisae Shimizu, Katsumi Abe, Ryo Hayashi

Oxide semiconductor device including insulating layer and display apparatus using the same

11/11/10 - 20100283049 - Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including
Inventors: Ayumu Sato, Ryo Hayashi, Hisato Yabuta, Tomohiro Watanabe

Thin film transistor and method of producing same

09/30/10 - 20100244022 - A first gate electrode (2) is formed on a substrate (1); a first gate insulating layer (3) is formed so as to cover the first gate electrode (2); a semiconductor layer (4) including an oxide semiconductor is formed on the first gate insulating layer (3); a second gate insulating layer
Inventors: Kenji Takahashi, Ryo Hayashi

Thin film transistor, manufacturing method therefor, and display apparatus using the same

08/26/10 - 20100213459 - A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with
Inventors: Mikio Shimada, Ryo Hayashi, Hideya Kumomi

Method for manufacturing field-effect transistor

08/12/10 - 20100203673 - A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of
Inventors: Ryo Hayashi, Hisato Yabuta, Yoshinori Tateishi, Nobuyuki Kaji

Thin-film transistor circuit, driving method thereof, and light-emitting display apparatus

08/05/10 - 20100194450 - In a light-emitting display apparatus including a plurality of pixels each including a light-emitting element and a driving circuit of the light-emitting element, and the driving circuit includes a plurality of thin-film transistors connected in parallel, a threshold voltage of the thin-film transistor reversibly changes according to a voltage applied
Inventors: Hisae Shimizu, Ryo Hayashi, Katsumi Abe

Manufacturing method of thin film transistor using oxide semiconductor

06/10/10 - 20100140612 - A manufacturing method of a thin film transistor having at least a gate electrode, a gate insulation film, an oxide semiconductor layer, a first insulation film, a source electrode, a drain electrode, and a second insulation film on a substrate, including: forming the gate electrode on the substrate; forming the
Inventors: Hideyuki Omura, Ryo Hayashi

Light emitting apparatus and method of manufacturing the same

05/13/10 - 20100117072 - To provide a light emitting apparatus in which high definition can be realized and the connection reliability of a wiring portion is excellent, the light emitting apparatus includes: a substrate; a light emitting element which includes a first electrode, an emission layer, and a second electrode which are stacked on
Inventors: Masato Ofuji, Katsumi Abe, Ryo Hayashi, Masafumi Sano, Hideya Kumomi

Active matrix display apparatus

04/15/10 - 20100090205 - An active matrix display apparatus including a transistor 20, a storage capacitor 30 and a light-emitting element 40, which are formed on a substrate 10. The transistor 20 has a source electrode 21, a drain electrode 22 and a gate electrode 23. The storage capacitor 30 has a multilayered structure
Inventors: Masato Ofuji, Katsumi Abe, Masafumi Sano, Hideya Kumomi, Ryo Hayashi

Inverter manufacturing method and inverter

04/08/10 - 20100085081 - To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the
Inventors: Masato Ofuji, Katsumi Abe, Ryo Hayashi, Masafumi Sano, Hideya Kumomi

Method for manufacturing thin film transistor using oxide semiconductor and display apparatus

03/18/10 - 20100065837 - A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second

Thin-film transistor and process for its fabrication

03/11/10 - 20100059751 - A bottom gate type thin-film transistor constituted of at least a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode. At an interface between the gate electrode and the gate insulating layer, the interface has a difference between hill tops and

Pixel circuit, light emitting display device and driving method thereof

03/04/10 - 20100053041 - A pixel circuit including at least a light emitting element, and a thin film transistor that supplies to the light emitting element a first current controlling a gray scale according to luminance-current characteristics of the light emitting element, wherein the thin film transistor has a back gate electrode, at least

Amorphous insulator film and thin-film transistor

03/04/10 - 20100051947 - An amorphous insulator film is provided which is composed of silicon (Si) oxide, in which the amorphous insulator film includes Ar and an amount of Ar included therein is equal to or larger than 3 at. % in terms of atomic ratio with respect to Si.

Amorphous oxide semiconductor and thin film transistor using the same

03/04/10 - 20100051938 - There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm−3 or more to 1×1022 cm−3 or less, and a density of bonds between oxygen and

Thin-film transistor and method of manufacturing same

03/04/10 - 20100051937 - There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga

Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus

03/04/10 - 20100051936 - Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6),

Amorphous oxide semiconductor, semiconductor device, and thin film transistor

02/25/10 - 20100044703 - where 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≠0.

Thin-film transistor fabrication process and display device

02/25/10 - 20100044701 - In a process for fabricating a thin-film transistor in which a gate electrode 4 is to be formed on a substrate 1, the process has the steps of forming the gate electrode 4 on the substrate 1, forming a metal oxide layer 7 in such a way as to cover

Production method of thin film transistor using amorphous oxide semiconductor film

12/31/09 - 20090325341 - A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and

Pixel circuit and image display apparatus having the pixel circuit

04/23/09 - 20090102829 - A pixel circuit and an image display apparatus are provided making use of a hysteresis characteristics of a transistor for driving a display element. The pixel circuit comprises: a transistor providing both different first and second relations between a gate voltage value and a drain current value at a transition

Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same

03/19/09 - 20090072233 - The present invention provides a light-emitting device, including: a pixel region provided on a substrate and including a blue pixel region, a green pixel region, and a red pixel region which correspond to lights of three primary colors of blue, green and red light, respectively, the pixel region including: a

Thin-film transistor and display device using oxide semiconductor

03/19/09 - 20090072232 - The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film


### Ryo Hayashi patent invention listings

The bibliographic references displayed about Ryo Hayashi's patents are for a recent sample of Ryo Hayashi's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Ryo Hayashi filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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