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Rintaro Koda patents

Recent patents with Rintaro Koda listed as an inventor - additional entries may be under other spellings.


Rintaro Koda - Related organizations: Sony Corporation patents

Light-emitting element and method for manufacturing the same

01/12/17 - 20170012409 - A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the
Inventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida

Semiconductor-laser-device assembly

04/21/16 - 20160111857 - A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure
Inventors: Shunsuke Kono, Masaru Kuramoto, Rintaro Koda

Light-emitting element and method for manufacturing the same

12/03/15 - 20150349494 - A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the
Inventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida

Light-emitting element and method for manufacturing the same

11/12/15 - 20150325981 - A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the
Inventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida

Semiconductor laser device assembly

08/20/15 - 20150236474 - Disclosed is a semiconductor laser device assembly including a semiconductor laser device; and a dispersion compensation optical system, where a laser light exited from the semiconductor laser device is incident and exits to control a group velocity dispersion value of the laser light exited from the semiconductor laser device per
Inventors: Shunsuke Kono, Masaru Kuramoto, Takao Miyajima, Rintaro Koda, Hideki Watanabe

Light-emitting device and method of manufacturing the same

02/12/15 - 20150043603 - Provided is a high-output light-emitting device capable of emitting a light beam in a single mode. The light-emitting device includes a laminate structure body configured by laminating, in order, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer on a base substrate, a second electrode,
Inventors: Masaru Kuramoto, Rintaro Koda, Hideki Watanabe

Light-emitting element and method for manufacturing the same

02/05/15 - 20150036710 - A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the
Inventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida

Light-emitting element and method for manufacturing the same

01/08/15 - 20150010032 - A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the
Inventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida

Semiconductor-laser-device assembly

12/25/14 - 20140376575 - A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure
Inventors: Shunsuke Kono, Masaru Kuramoto, Rintaro Koda

Semiconductor laser apparatus assembly

10/16/14 - 20140307750 - A semiconductor laser apparatus is provided. The semiconductor laser apparatus includes a mode-locked semiconductor laser device and an external resonator including a dispersion compensation system, wherein the semiconductor laser apparatus is configured to generate self modulation, to introduce a negative group velocity dispersion into the external resonator, and to provide
Inventors: Shunsuke Kono, Masaru Kuramoto, Takao Miyajima, Rintaro Koda, Hideki Watanabe

Light-emitting device and method of manufacturing the same

03/28/13 - 20130075772 - Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a
Inventors: Rintaro Koda, Hideki Watanabe, Masaru Kuramoto, Shunsuke Kono, Takao Miyajima

Laser diode element assembly and method of driving the same

09/20/12 - 20120236886 - A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound
Inventors: Tomoyuki Oki, Masaru Kuramoto, Rintaro Koda, Hideki Watanabe, Hiroyuki Yokoyama

Submount, submount assembly, and submount assembling method

08/09/12 - 20120201259 - A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first
Inventors: Hideki Watanabe, Rintaro Koda, Masaru Kuramoto, Kaori Naganuma, Hiroyuki Yokoyama

Light emitting element, method for manufacturing light emitting element, light emitting element assembly, and method for manufacturing light emitting element assembly

07/12/12 - 20120175670 - A method for manufacturing a light emitting element including the steps of (A) sequentially forming on a substrate a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type; (B) forming a plurality of point-like hole portions
Inventors: Yuji Masui, Takahiro Arakida, Rintaro Koda, Tomoyuki Oki

Laser diode device

06/14/12 - 20120147917 - A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure
Inventors: Tomoyuki Oki, Hideki Watanabe, Rintaro Koda, Masaru Kuramoto, Hiroyuki Yokoyama

Vertical cavity surface emitting laser and method of manufacturing the same

02/09/12 - 20120034720 - A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR
Inventors: Tomoyuki Oki, Rintaro Koda, Naoki Jogan, Yuji Masui, Takahiro Arakida

Vertical cavity surface emitting laser and method of manufacturing thereof

01/12/12 - 20120009704 - A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in
Inventors: Yuji Masui, Takahiro Arakida, Terukazu Naruse, Rintaro Koda, Naoki Jogan

Alignment method of semiconductor optical amplifier and light output device

01/05/12 - 20120002696 - Provided is an alignment method of a semiconductor optical amplifier with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically
Inventors: Tomoyuki Oki, Rintaro Koda, Masaru Kuramoto, Takao Miyajima, Hiroyuki Yokoyama

Semiconductor optical amplifier

01/05/12 - 20120002271 - A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN
Inventors: Masaru Kuramoto, Masao Ikeda, Rintaro Koda, Tomoyuki Oki, Hideki Watanabe, Takao Miyajima, Hiroyuki Yokoyama

Semiconductor device and method of manufacturing it

12/01/11 - 20110294236 - A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each
Inventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Kayoko Kikuchi, Rintaro Koda, Norihiko Yamaguchi

Semiconductor light emitting device

07/21/11 - 20110176570 - A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped
Inventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Rintaro Koda, Tomoyuki Oki, Naoki Jogan

Semiconductor device and method of manufacturing the same

05/26/11 - 20110122910 - The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements
Inventors: Rintaro Koda, Takahiro Arakida, Yuji Masui, Tomoyuki Oki

Laser diode

05/05/11 - 20110103420 - A laser diode with which high density crystal defect and surface roughness are able to be inhibited from being generated is provided. The laser diode includes a laminated body including an active layer and a current narrowing layer on a substrate. The substrate is an inclined substrate having an off-angle
Inventors: Rintaro Koda, Yusuke Nakayama

Optical device

05/05/11 - 20110103419 - The present invention provides an optical device capable of suppressing a drive current and an optical output to be varied with a passage of the time. The optical device includes: an optical element including a first end face and a second end face, and emitting light having a wavelength from
Inventors: Rintaro Koda, Takao Miyajima, Hideki Watanabe, Hiroyuki Yokoyama, Tomoyuki Oki, Masaru Kuramoto

Laser diode

03/17/11 - 20110064109 - A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for
Inventors: Yuji Masui, Rintaro Koda, Tomoyuki Oki, Takahiro Arakida, Naoki Jogan, Yoshinori Yamauchi

Semiconductor device and method of manufacturing the same

01/27/11 - 20110019709 - The present invention provides a method of manufacturing a semiconductor device realizing improved yield. The semiconductor device includes: a substrate having a top face, an under face, and side faces; an optical function unit formed on the top face; a plurality of electrode pads formed on the under face; and
Inventors: Yuji Masui, Takahiro Arakida, Naoki Jogan, Rintaro Koda, Kouichi Kondo

Laser diode

01/13/11 - 20110007769 - A laser diode includes: a first multilayer film reflecting mirror, an active layer, and a second multilayer film reflecting mirror in this order; and a first oxide narrowing layer and a second oxide narrowing layer. The first oxide narrowing layer is formed close to the active layer, in comparison with
Inventors: Yuji Masui, Osamu Maeda, Rintaro Koda, Takahiro Arakida, Naoki Jogan, Kouichi Kondo

Light-emitting element assembly and method for manufacturing the same

11/11/10 - 20100285625 - A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting
Inventors: Rintaro Koda, Takahiro Arakida, Satoshi Taniguchi, Yuji Masui, Nobuhiro Suzuki, Tomoyuki Oki, Chiyomi Uchiyama, Kayoko Kikuchi

Vertical cavity surface emitting laser and method of manufacturing thereof

08/12/10 - 20100202486 - A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in
Inventors: Yuji Masui, Takahiro Arakida, Terukazu Naruse, Rintaro Koda, Naoki Jogan

Semiconductor light-emitting device

08/12/10 - 20100200868 - A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a
Inventors: Yuji Masui, Rintaro Koda, Osamu Maeda, Takahiro Arakida, Terukazu Naruse, Naoki Jogan

Semiconductor light-emitting device

08/05/10 - 20100193805 - A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a
Inventors: Naoki Jogan, Yuji Masui, Rintaro Koda, Takahiro Arakida

Method for producing semiconductor laser, semiconductor laser, optical pickup, and optical disk drive

04/01/10 - 20100080107 - A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region
Inventors: Rintaro Koda, Masaru Kuramoto, Eiji Nakayama, Tsuyoshi Fujimoto

Vertical cavity surface emitting laser

02/25/10 - 20100046565 - A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in
Inventors: Yuji Masui, Takahiro Arakida, Rintaro Koda, Osamu Maeda, Tomoyuki Oki, Naoki Jogan

Semiconductor light emitting device

11/19/09 - 20090285253 - A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped
Inventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Rintaro Koda, Tomoyuki Oki, Naoki Jogan

Semiconductor light receiving element and method of manufacturing semiconductor light receiving element, and optical communication system

08/06/09 - 20090194837 - The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light
Inventors: Inventors: Tomoyuki Oki, Rintaro Koda, Naoki Jogan, Yuji Masui, Takahiro ArakidaTomoyuki Oki, Rintaro Koda, Naoki Jogan, Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Takahiro Arakida, Rintaro Koda, Norihiko Yamaguchi, Yuji Masui, Tomoyuki Oki

Light-emitting element assembly and method for manufacturing the same

07/02/09 - 20090168825 - A light-emitting element assembly includes a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated
Inventors: Rintaro Koda, Takahiro Arakida, Satoshi Taniguchi, Yuji Masui, Nobuhiro Suzuki, Tomoyuki Oki, Chiyomi Uchiyama, Kayoko Kikuchi

Method for manufacturing semiconductor light-emitting device

04/16/09 - 20090098675 - A method of manufacturing a semiconductor light-emitting device includes steps of forming a vertical cavity structure including a layer to be oxidized on a semiconductor substrate, and then forming a circular groove having a depth which penetrates at least the layer to be oxidized from an upper surface of the
Inventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Rintaro Koda, Tomoyuki Oki

Semiconductor device and method of manufacturing it

02/05/09 - 20090032908 - A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each
Inventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Kayoko Kikuchi, Rintaro Koda, Norihiko Yamaguchi


### Rintaro Koda patent invention listings

The bibliographic references displayed about Rintaro Koda's patents are for a recent sample of Rintaro Koda's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Rintaro Koda filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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