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10/11/07 - USPTO Class 204 |  98 views | #20070235320 | Prev - Next | About this Page  204 rss/xml feed  monitor keywords

Reactive sputtering chamber with gas distribution tubes

USPTO Application #: 20070235320
Title: Reactive sputtering chamber with gas distribution tubes
Abstract: A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability. (end of abstract)



Agent: Patterson & Sheridan, LLP - Houston, TX, US
Inventors: John M. White, Yan Ye, Akihiro Hosokawa
USPTO Applicaton #: 20070235320 - Class: 204192100 (USPTO)

Related Patent Categories: Chemistry: Electrical And Wave Energy, Non-distilling Bottoms Treatment, Coating, Forming Or Etching By Sputtering

Reactive sputtering chamber with gas distribution tubes description/claims


The Patent Description & Claims data below is from USPTO Patent Application 20070235320, Reactive sputtering chamber with gas distribution tubes.

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Previous Patent Application:
Multi-processing using an ionized physical vapor deposition (ipvd) system
Next Patent Application:
Depositing rhuthenium films using ionized physical vapor deposition (ipvd)
Industry Class:
Chemistry: electrical and wave energy

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