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01/25/07 | 58 views | #20070020403 | Prev - Next | USPTO Class 427 | About this Page  427 rss/xml feed  monitor keywords

Process for producing extremely flat microcrystalline diamond thin film by laser ablation method

USPTO Application #: 20070020403
Title: Process for producing extremely flat microcrystalline diamond thin film by laser ablation method
Abstract: Diamond thin films deposited by known PLD processes are composed of diamond crystal grains with a size of about 1 μm and have an irregular surface. A process for producing an ultraflat nanocrystalline diamond thin film by laser ablation includes creating atomic hydrogen and a supersaturated state of carbon in a space between a target and a substrate in a hydrogen atmosphere inside a reaction chamber at a substrate temperature of 450° C. to 650° C., a laser energy of 100 mJ or more, and a target-substrate distance of 15 to 25 mm to enable the growth of an ultraflat, single-phase nanocrystalline diamond thin film containing substantially no non-diamond component. The hydrogen atmosphere has a sufficient pressure to selectively completely etch off sp2 bond fractions (graphite fractions) deposited on the substrate with sp3 bond fractions remaining. (end of abstract)
Agent: Westerman, Hattori, Daniels & Adrian, LLP - Washington, DC, US
Inventors: Tsuyoshi Yoshitake, Kunihito Nagayama, Takeshi Hara
USPTO Applicaton #: 20070020403 - Class: 427586000 (USPTO)
Related Patent Categories: Coating Processes, Direct Application Of Electrical, Magnetic, Wave, Or Particulate Energy, Chemical Vapor Deposition (e.g., Electron Beam Or Heating Using Ir, Inductance, Resistance, Etc.), Pyrolytic Use Of Laser Or Focused Light (e.g., Ir, Uv Lasers To Heat, Etc.)
The Patent Description & Claims data below is from USPTO Patent Application 20070020403.
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