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  Process for cutting out a block of material and formation of a thin filmUSPTO Application #: 20060191627Title: Process for cutting out a block of material and formation of a thin film Abstract: (c) the separation at the level of the embrittled zone of the superficial part (14) of the block from a remaining part (16), called the mass part, from the separation initiator (30, 36) by the use of a second means, different from the first means of separation and chosen from among a thermal treatment and/or the application of mechanical forces acting between the superficial part and the embrittled zone. Application for the manufacture of components for micro-electronics, opto-electronics or micro-mechanics. (b) the formation at the level of the embrittled zone of at least one separation initiator (30, 36) by the use of a first means of separation chosen from amongst the insertion of a tool, the injection of a fluid, a thermal treatment and/or implantation of ions of an ionic nature different from that introduced during the preceding stage, and (a) the formation in the block of a buried zone (12), embrittled by at least one stage of ion introduction, the buried zone defining at least one superficial part (14) of the block, A process for cutting out a block of material (10) comprising the following stages: (end of abstract) Agent: Brinks Hofer Gilson & Lione - Chicago, IL, US Inventors: Bernard Aspar, Chrystelle Lagache USPTO Applicaton #: 20060191627 - Class: 156249000 (USPTO) The Patent Description & Claims data below is from USPTO Patent Application 20060191627. Brief Patent Description - Full Patent Description - Patent Application Claims
TECHNICAL FIELD [0001] In a general way, the present invention relates to a process for cutting out a block of material. This process can be implemented, in particular, for the formations of thin films. [0002] Thin films, self-supporting or integral with a support substrate, are widely used in the fields of micro-electronics, opto-electronics and micro-mechanics. Thus the invention is applicable to these domains, in particular for producing components or integrated circuits. STATE OF PRIOR ART [0003] As mentioned above, the use of thin films is increasingly widespread for components whose operation or manufacturing method requires special physical and electrical properties. [0004] Thin films have a thickness which is usually comprised between a few nanometres and a few micrometres. They also make it possible, for example, to use materials whose usage under the form of a thick substrate would be ruled out for reasons of cost or compatibility With other materials used. [0005] The compatibility of materials can also constitute an obstacle to the direct formation of a thin film on a support substrate on which it is finally used. A certain number of processes have been developed to form first of all a thin film on a source substrate and then to transfer the thin film from the source substrate to a target substrate. [0006] These processes as well as other techniques concerning the manufacture and transfer of thin films are described in documents [1], [2], [3], [4], [5], [6] and [7], whose complete references are given at the end of the present description. [0007] In particular, document [1] describes the possibility of forming an embrittled zone in a plate of material by ionic implantation in order to detach the superficial thin film from the plate later at the level of this zone. [0008] The separation of the thin film from the source substrate is provoked, or at least assisted, by using a certain number of mechanical or thermal stresses. In particular, the cutting out of the thin film requires an energy budget under thermal and/or mechanical form, which is linked mainly to the dose of the species implanted to form the embrittled zone. [0009] The implementation of techniques for cutting out and transferring a thin film, as described in the documents quoted above, can be linked to a certain number of difficulties. For example, the use of certain materials with a high thermal expansion coefficient is not compatible with a thermal treatment at too high a temperature. For certain substrates it is also necessary to limit the dose of the species implanted either to preserve the thin film or for economical reasons. [0010] Furthermore, the implementation of mechanical forces to separate the source substrate from the thin film, such as described above in reference [7], also makes it possible to reduce the thermal budget for fracture, especially in the case where the materials in contact have different expansion coefficients. The application of mechanical efforts on the source substrate and/or the target support is however not always possible, especially when the materials being used are brittle, or when the cleavage zone has not been sufficiently embrittled by ionic-implantation. [0011] Finally, the techniques of separation and transfer of the thin film, described above, involve a certain number of restrictions and compromises. These restrictions are imposed, in particular, by the type of materials used to constitute the source substrate, the thin film and the target support. DESCRIPTION OF THE INVENTION [0012] The aim of the invention is to propose a cutting out method making it possible, in particular, to form and transfer thin films, without the limitations mentioned above. [0013] A further aim of the invention is to propose a cutting out method able to be implemented with a reduced energy budget and in particular a reduced thermal budget. [0014] Another aim of the invention is to propose an economical process in which an eventual implantation of impurities, intended to form an embrittled zone, can be carried out with a reduced dose. [0015] In order to attain these aims, the invention has more precisely the aim of a method for cutting out a block of material, comprising the following stages: [0016] (a) the formation in the block of a buried zone, embrittled by at least one stage of ion introduction, the buried zone defining at least one superficial part of the block, [0017] (b) the formation at the level of the embrittled zone of at least one separation initiator by the use of a first means of separation chosen from amongst the insertion of a tool, the injection of a fluid, a thermal treatment and/or implantation of ions of an ionic nature different from that introduced during the preceding stage, and [0018] (c) separation at the level of the embrittled zone of the superficial part of the block from a remaining part, called the mass part, from the separation initiator by the use of a second means, different from the first means of separation and chosen from among a thermal treatment and/or the application of mechanical forces acting between the superficial part and the embrittled zone. [0019] The separation initiator(s) can be located on all or part of the periphery of the block and/or on local internal zones of the block, and are capable of spreading into the embrittled zone. [0020] The invention is based on the fact that it is possible to reduce significantly the overall energy for providing the block (either of thermal origin and/or mechanical origin) for implementing a cutting out process, by forming a separation initiator before the actual separation. [0021] The mechanical stresses which can be used profitably for the separation can be stresses applied from outside the block or internal stresses present in the block. [0022] Although the stages are preferably carried out successively in the order indicated, it is possible, at least for certain applications, to carry out stages a and b concomitantly. Moreover, stages b and c can also be concomitant. [0023] According to a special implementation of the process, intended for the manufacture of thin films, it is possible to form an embrittled zone extending closely parallel to a closely plane face of the block, to define in the block a superficial part in the form of a thin superficial film. [0024] By closely plane face, it is understood a face whose mean plane is flat, but which can comprise surface micro-rugosities whose rugosity values range from a few tenths of nanometres to several hundred nanometres. The inventors have been able to show that an implantation across a surface with a micro-rugosity, for example with an RMS (root mean square height) value of 10 nm, does not disturb the embrittling mechanism and subsequent fracture. This fact is interesting since this rugosity is of the order of the rugosity of the free face of the film after transfer. Therefore in these conditions, it is possible to recycle the same substrate several times without recourse to surface polishing. 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