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  Pressurized reactor for thin film depositionUSPTO Application #: 20060188658Title: Pressurized reactor for thin film deposition Abstract: An apparatus is provided for use with thin film deposition to permit sequential deposition of discrete conformal layers onto a substrate situated within the apparatus. The apparatus includes a chamber and an outlet in substantial alignment therewith. The chamber includes an inlet to permit introduction of a pressurized gas into the chamber, and a platform on which a substrate may be placed for thin film deposition. The outlet provides an exit through which the substrate may be removed from within the chamber. The apparatus also includes a gate position within the chamber adjacent the outlet for moving between an open position and a closed position relative to the outlet. In the presence of pressurized gas within the chamber, the gate may be pushed against the outlet to provide a substantially pressure tight seal thereat. (end of abstract) Agent: Greenberg Traurig, LLP - Boston, MA, US Inventor: Robert W. Grant USPTO Applicaton #: 20060188658 - Class: 427421100 (USPTO) Related Patent Categories: Coating Processes, Spraying The Patent Description & Claims data below is from USPTO Patent Application 20060188658. Brief Patent Description - Full Patent Description - Patent Application Claims
RELATED US APPLICATION(S) [0001] The present application claims priority to U.S. patent application Ser. No. 60/655,253, filed Feb. 22, 2005, which application is hereby incorporated herein by reference. TECHNICAL FIELD [0002] The present invention relates pressurized reactors, and more particularly to pressurized reactors for use in connection with thin film deposition, such as a chemical fluid deposition (CFD) process. BACKGROUND ART [0003] Integrated circuits, micro-electromechanical systems (MEMS) devices, flat panel displays, fuel cells, and other substrates are commonly formed today by applying or depositing thin films onto substrates. New techniques in patterning and deposition have led the way in fulfilling Moore's Law (the historical increase in processor speed), as well as the trend toward lower cost via smaller feature sizes and denser circuitry. As integrated circuits and other electronic components continue to be made smaller and smaller moving into the sub-micron or nanometer size with aspect ratio approaching 100 to 1 (depth to width), it has become apparent that existing deposition approaches may not be able to provide the necessary multi-layer conformity on non-planar substrate surfaces. Existing deposition approaches also include other drawbacks, such as slow deposition rates, high carbon content, and poor conductivity. [0004] For example, conformity and stoichiometry control can act as limiting factors for Chemical Vapor Deposition (CVD). CVD can be used to deposit a dielectric, conductive metal oxide or metal using the decomposition of, for instance, metalorganic precursors in a partial vacuum condition. Since deposition is dependent on precursor concentration arriving to a surface, different deposition rates can result in non-conformal or non-uniform deposition on a non-planar substrate having deep features. "Bridging" may also occur with CVD, eventually closing off the deep feature in the substrate prior to complete coating. In addition, a CVD deposited film can include up to about 10% Carbon (i.e., CO.sub.2, CO etc.) contamination, which can affect the effectiveness of the resulting capacitor. [0005] In the case of Atomic Layer Deposition (ALD), growth rates can be exceedingly slow and carbon contamination, similar to CVD, may become an issue, even after an Oxygen annealing process. With ALD, the precursor is decomposed in Oxygen at reduced pressure to deposit only one atomic monolayer at a time. This process, therefore, can be extremely slow for applications where hundreds of layers are needed, such as the case when depositing film thickness of, for example, 600 Angstroms and only 4 Angstroms (i.e., the thickness of a monolayer) can be deposited at a time. Therefore, ALD would not be able to address the speed requirements needed. [0006] Sputtering, on the other hand, is a "line of sight" technology, which can be severely limited in non-planar architecture. In particular, droplets of metal are caused to travel across a high vacuum space from a source target toward a substrate. Momentum does not allow the droplets to easily turn or diffuse into the sides of a deep feature. As a result, this can leave a coating that essentially excludes the sides of the deep feature. Moreover, if several metals are present in the sputtering target source, there can be additional problems, such as those related to fractional distillation that can cause incorrect stoichiometry in the deep feature. A resulting film, therefore, may not perform properly. [0007] To address some of these issues, Chemical Fluid Deposition (CFD) has recently been utilized. In general, CFD is a process by which materials (e.g., metals, metal oxides, or organics) may be deposited from a supercritical or near-supercritical solution via chemical reaction of soluble precursors. Desired materials can be deposited on a substrate, such as a silicon wafer, as a high-purity thin film. The supercritical fluid employed may be used to transport a precursor material to the substrate surface where a reaction takes place, and subsequently transport ligand-derived decomposition products away from the substrate to remove potential film impurities. The entire process takes place in solution under supercritical conditions to provide substantially conformal thin films on small features. [0008] Experimental pressurized reactors have been developed for use with various deposition processes, including those utilizing supercritical gases to deposit thin films on substrates, such as those employed in CFD. These reactors, however, have opening mechanisms that can expose the reactor and the substrate, after deposition, to ambient air or a similar environment that can introduce contaminants onto the substrate. These reactors also have the added inconvenience of having large and forceful opening and/or closing mechanisms that can affect the substrate removal process from within these reactors. [0009] Accordingly, it would be desirable to provide a reactor for use in connection a supercritical gas deposition process to provide conformal thin films on a substrate, and which can minimize exposure of the substrate to the environment to prevent contamination of the substrate, while providing convenience and ease of use. SUMMARY OF THE INVENTION [0010] The present invention provides, in one embodiment, an apparatus for use with a deposition process utilizing supercritical gases, such as CO.sub.2, and a metal or metal organic precursor, for depositing conformal thin films onto a substrate, for example, a Silicon substrate. [0011] In accordance with an embodiment, the apparatus includes a chamber within which a pressurized gas can be accommodated for thin film deposition of a substrate. The chamber can include an inlet through which the pressurized gas can be introduced and a platform on which a substrate can be placed. The platform, in an embodiment, can include a heating element to raise the temperature of the substrate to a desired level in order to control deposition rate onto the substrate. The apparatus can also include an outlet in substantial alignment with the chamber so that the substrate can subsequently be removed therethrough. A biasing gate may be provided adjacent the outlet for engaging the outlet, so as to minimize outflow of pressure and gas from within the chamber. In an embodiment, the gate can move between an open position and a closed position relative to the outlet. The gate may be designed so as to permit pressure from within the chamber to push the gate against the exit to enhance a seal thereat. [0012] In accordance with another embodiment, an apparatus for use in thin film deposition is provided. The apparatus includes a processing module and an exit portion coupled thereto. The processing module, in an embodiment, includes a chamber within which a substrate may be placed for thin film deposition. In accordance with one embodiment, a heated platform onto which the substrate may be placed can be provided within the chamber. The processing module may also include an inlet through which a mixture of pressurized gas and a precursor may be injected into the chamber. The exit portion, in an embodiment, may include an interior cavity in substantial alignment with the chamber when the exit portion and the processing module are coupled to one another to provide a substantially pressure tight environment. An outlet may be provided in the exit portion so that the substrate can be removed from within the chamber. A biasing gate may further be provided within the exit portion adjacent the outlet for moving between an open position and a closed position. The gate may be designed so as to permit pressure from within the chamber to push the gate against the outlet to enhance a seal thereat. [0013] The present invention also provides a method for thin film deposition. The method initially includes providing an apparatus having a chamber within which a pressurized gas can be accommodated, an outlet in substantial alignment with the chamber and through which a substrate can be removed, and a biasing gate positioned within the chamber adjacent the outlet for engaging the outlet, so as to minimize outflow of pressure and gas from within the chamber. Next, a substrate may be placed within the chamber. Thereafter, the gate may be advanced to a closed position, such that the gate engages the outlet. Subsequently, a mixture of a pressurized gas and a precursor material can be injected into the chamber, and a thin film allowed to be formed on the substrate from the mixture. The injection of the mixture into the chamber provides sufficient pressure to push the gate against the outlet to ensure a substantially pressure tight engagement thereat. In addition, the substrate may be heated to a desired temperature to control the rate of thin film deposition thereon. Once the deposition is complete, and pressure is reduced, the gate may be moved into an open position and the substrate may be removed through the outlet. [0014] The present invention further provides another method for thin film deposition. The method initially includes providing a chamber within which a pressurized gas can be accommodated for thin film deposition of a substrate. Next a substrate may be placed into the chamber through an outlet thereof. Thereafter, the outlet may be blocked from within the chamber so as to minimize outflow of pressure and gas therefrom. Subsequently, a mixture of a pressurized gas and a precursor material may be injected into the chamber, and a thin film be allowed to form on the substrate from the mixture. The injection of the mixture into the chamber, in one embodiment, provides sufficient pressure to further act on the blocking of the outlet, so that a substantially pressure tight engagement can be provided thereat. In addition, the substrate may be heated to a desired temperature to control the rate of thin film deposition thereon. Once the deposition is complete, and pressure is reduced, the outlet may be unblocked and the substrate removed through the outlet. BRIEF DESCRIPTION OF DRAWINGS [0015] FIG. 1 illustrates a cross-sectional view of a pressurized reactor, in accordance with an embodiment of the present invention. [0016] FIG. 2A illustrates a cross-sectional view of an exit portion of the reactor in FIG. 1 along with a gate in a closed position. [0017] FIG. 2B illustrates the gate in FIG. 1 in an open position. [0018] FIG. 3A illustrates a cross-sectional view of the gate in FIGS. 2A-B. [0019] FIG. 3B illustrates a seal for use in connection with the gate in FIG. 3A. 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