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  Plating apparatus, plating method, and method for manufacturing semiconductor deviceUSPTO Application #: 20060226018Title: Plating apparatus, plating method, and method for manufacturing semiconductor device Abstract: A plating apparatus according to the present invention is provided with a plating tank 100 in which an anode electrode 5 is provided, the plating apparatus performing the plating by (i) streaming a plating solution and an electrolytic liquid into the plating tank 100, (ii) emitting a jet of the plating solution to the plating-target face W of the semiconductor wafer 1 from the underneath of the semiconductor wafer 1, and (iii) streaming the electrolytic liquid to the anode electrode 5 while electrically conducting between the semiconductor wafer 1 and the anode electrode 5, the plating tank including a partition in between the semiconductor wafer 1 and the anode electrode 5, and the partition (i) separating the semiconductor wafer 1 and the anode electrode 5 and (ii) dividing the plating tank 100 into a plating-target substrate room and an anode electrode room. Thus, in a face-down type fountain plating apparatus, the plating quality would not be degraded by micro foreign solid particles originated from, for example, a black film while maintaining the operability of the apparatus. (end of abstract) Agent: Nixon & Vanderhye, PC - Arlington, VA, US Inventor: Yoshihide Iwazaki USPTO Applicaton #: 20060226018 - Class: 205148000 (USPTO) Related Patent Categories: Electrolysis: Processes, Compositions Used Therein, And Methods Of Preparing The Compositions, Electrolytic Coating (process, Composition And Method Of Preparing Composition), Agitating Or Moving Electrolyte During Coating The Patent Description & Claims data below is from USPTO Patent Application 20060226018. Brief Patent Description - Full Patent Description - Patent Application Claims
[0001] This Nonprovisional application claims priority under 35 U.S.C. .sctn.119(a) on Patent Applications (i) No. 112888/2005 filed in Japan on Apr. 8, 2005 and (ii) No. 202283/2005 filed in Japan on Jul. 11, 2005, the entire contents of which are hereby incorporated by reference. FIELD OF THE INVENTION [0002] The present invention relates to (i) a plating apparatus, (ii) a plating method, and (iii) a method for manufacturing a semiconductor device, all of which are excellent for finely plating a plating-target face of, for example, a semiconductor wafer in order to form wiring. BACKGROUND OF THE INVENTION [0003] In the recent years, metal plating has been utilized for forming a wiring on, for example, a semiconductor wafer. Known conventional apparatuses utilized for metal plating include a face-down type fountain plating apparatus, a rack-method vertical plating apparatus, and a face-up type fountain plating apparatus. [0004] The face-down type fountain plating apparatus, as illustrated in FIG. 11, is provided with: a wafer holder 2' that holds a semiconductor wafer 1'; a cup 3'; a plating solution jet tube 4' for supplying plating solution to the cup 3'; and an anode electrode 5'. The anode electrode 5' is normally made of copper mixed with phosphorus. The anode electrode 5' is provided in the cup 3'. The wafer holder 2' is provided to the cup 3'. The semiconductor wafer 1' is held on top of the cup 3' by the wafer holder 2'. In the face-down type fountain plating apparatus, the plating solution jet tube 4' is disposed underneath of the semiconductor wafer 1'. With this structure, jets of plating solution emitted from the plating solution jet tube 4' is applied on the semiconductor wafer 1' from the underneath so as to plate the plating-target face (face to be plated). [0005] The face-down type fountain plating apparatus is provided with the following components, although these components are not illustrated in FIG. 11: a plating solution tank disposed in such a way as to surround the cup 3'; a plating solution storage tank that functions as a supply source of plating solution; a pump utilized for circulating the plating solution within the plating apparatus; a filter that filters off foreign solid particles contained in the plating solution; and a pipe that connects the above components. [0006] With the face-down type fountain plating apparatus, the pump conveys the plating solution from the plating solution storage tank to the bottom of the cup 3' via the filter. Then, the plating solution streams into the cup 3' from the underneath of the cup 3' through the plating solution jet tube 4', passes by the anode electrode 5', and finally reaches the plating-target face of the semiconductor wafer 1. Subsequently, the plating solution is drained out of the cup 3' from an upper edge of the cup 3' (the plating solution is drained through a gap between the wafer holder 2' and the cup 3'). Finally, the plating solution is collected by the plating solution tank and returned to the plating solution storage tank. [0007] In the face-down type fountain plating apparatus is provided an "outlet opening through which the plating solution streamed into the plating tank is partially drained out of the plating tank from (i) a through hole made through the anode electrode or (ii) a vicinity of the anode electrode." Another known plating apparatus is that adopting an inert electrode, a typical example of which includes platinum, as an anode electrode. [0008] The rack-method vertical plating apparatus, as illustrated in FIG. 12, is provided with an anode electrode 6'', a rack 24, and a plating tank 12. The anode electrode 6'' is normally disposed in an anode bag 13 made of cloth having a raised back. As the anode electrode 6'', (i) a ball-shaped copper mixed with phosphorus that is placed in a bascket made of titanium or (ii) a copper plate made of copper mixed with phosphorus is used. The rack 24 is a plate-shaped jig provided with a power source for supplying the semiconductor wafer 1 with power. Through the jig is made a hole having an inner diameter slightly smaller than that of the semiconductor wafer 1. Finally, the plating tank 12 is provided with a wafer holder 25 and a squeegee (not illustrated). The wafer holder 25 stabilizes the semiconductor wafer 1 on the rack 24, and insulates the rear face of the semiconductor wafer 1. The squeegee agitates the plating solution. [0009] The rack-method vertical plating apparatus is provided with the following components, although these components are not illustrated in FIG. 12: a plating solution tank; a plating solution storage tank that functions as a supply source of the plating solution; a pump utilized for circulating the plating solution within the plating apparatus; a filter that filters off foreign solid particles contained in the plating solution; a pipe that connects the above components; and accessory units. [0010] The pump conveys the plating solution from the storage tank to an inlet opening 14 via the filter. Then, the plating solution streams in the vicinity of the anode bag 13, which covers the anode electrode 6, in the plating tank 12. Subsequently, the plating solution reaches the plating-target face of the semiconductor wafer 1. Then, the plating solution is drained out from the upper edge of the plating tank 12, and streams into the dam 15. Finally, the plating solution is returned to the plating solution storage tank via the return tube that constitutes a part of the dam 15. Such rack-method vertical plating apparatus is disclosed in Document 1: Janapese Unexamined Patent Publication 2000-87299 (published on Mar. 28, 2000). [0011] Further, in the face-up type fountain plating apparatus, the plating-target face of a semiconductor wafer faces upward, and an anode electrode is so disposed as to face the plating-target face. Therefore, the plating solution is supplied onto the upper face of the semiconductor wafer. Such face-up type fountain plating apparatus is disclosed in, for example, Document 2: Japanese Unexamined Patent Publication No. 2001-49498 (published on Feb. 20, 2001) or Document 3: Japanese Unexamined Patent Publication no. 2001-24303 (published on Jan. 26, 2001). [0012] The face-down type fountain plating apparatus has a problem in that micro foreign solid particles adhere to the plating-target face, and therefore the plating quality is degraded. This problem is originated from the surface of the anode electrode in the path through which the plating solution streams; the plating solution supplied from the plating solution storage tank by the pump is filtrated by the filter, is supplied to the cup from the underneath thereof, passes by the vicinity of the anode electrode, and reaches the plating-target face of the semiconductor wafer. If the anode electrode includes copper mixed with phosphorus then a film in black called black film is formed on the surface of the anode electrode. The black film is made of copper complex (Cu.sup.+) with one valence electron, which copper complex contains chlorine (Cl) or phosphorus (P). The black film is formed by a chemical combination with copper ion having one valence electron, which copper ion is dissolved from the anode electrode. [0013] The black film suppresses a disproportionation reaction of copper according to formula (1) below, thereby preventing generation of slime. 2Cu.sup.+.fwdarw.Cu+Cu.sup.2+ (1) [0014] However, the black film formed on the surface of the anode electrode is easily peeled off therefrom. A small piece of peeled black film is conveyed, along with a stream of the plating solution, to the plating-target face of the semiconductor wafer. This causes a problem in that the black film adheres to a plating-target face of the semiconductor wafer. [0015] Such problem caused by the black film can be prevented by adopting an inert electrode as the anode electrode. In this case, however, an additive agent contained in the plating solution is oxidatively decomposed on the surface of the anode electrode. This causes a problem in that the consumption of the plating solution increases. Another problem is that the oxidative decomposition may generate a decomposition product, and the decomposition product would contaminate the plating solution. [0016] In contrast, with the conventional rack-method vertical plating apparatus, the anode electrode containing copper mixed with phosphorus is disposed in the anode bag made of cloth having raised back. This prevents the foreign solid particles, which are generated from the black film, from adhering to the semiconductor wafer. However, in order to hold the semiconductor wafer in the plating tank, the vertical plating apparatus requires fixedly holding the semiconductor wafer on the rack. This causes problems in that (i) the operability is degraded, (ii) the plating quality is degraded, and (iii) automation of operation is made difficult. [0017] Further, in the face-up type fountain plating apparatus according to Document 2, the bottom portion of the anode room includes an ion exchange resin or a porous neutral membrane to prevent the black film from peeling, which may be caused by dryness, and the anode room is filled with the plating solution. Further, in the face-up type fountain plating apparatus according to Document 3, the bottom face of the anode room includes a porous element having numerous thin holes. [0018] Further, an apparatus having a different structure from the above plating apparatuses is disclosed in Document 4: Japanese Unexamined Patent Publication No. 2003-73889 (published on Mar. 12, 2003). Document 4 teaches a copper-plating apparatus that electrically plates a semiconductor wafer with copper, the copper-plating apparatus being configured such that (i) the plating tank is partitioned by an anion exchange membrane into a cathode room and an anode room, and (ii) an inert electrode is provided for functioning as the anode electrode. Further, in the plating apparatus according to Document 4, the cathode room and the anode room are separated by the anion exchange membrane, and a cathode liquid and an anode liquid are supplied to the cathode room and the anode room, respectively. [0019] With regard to the face-down type fountain plating apparatus among the above conventional plating apparatuses, there has not been suggested a plating apparatus with which the plating solution would not be contaminated with micro foreign solid particles originated from, for example, a black film. SUMMARY OF THE INVENTION [0020] In view of the above problems, the present invention has as an object to provide (i) a plating apparatus, especially a face-down type fountain plating apparatus, with which the plating quality would not be degraded by micro foreign solid particles originated from, for example, a black film, while maintaining the operability of the apparatus, (ii) a plating method, and (iii) a method for manufacturing a semiconductor device. [0021] In order to solve the above problems, a plating apparatus according to the present invention is adapted so that, in a plating apparatus for plating a plating-target face of a plating-target substrate, the plating apparatus including a plating tank in which an anode electrode is provided, the plating apparatus performing the plating by (i) streaming a plating solution and an electrolytic liquid into the plating tank, (ii) emitting a jet of the plating solution to the plating-target face of the plating-target substrate from an underneath of the plating-target substrate, and (iii) streaming the electrolytic liquid to the anode electrode provided in the plating tank while electrically conducting between the plating-target substrate and the anode electrode, the plating tank including a partition in between the plating-target substrate and the anode electrode, and the partition (i) separating the plating-target substrate and the anode electrode and (ii) dividing the plating tank into a plating-target substrate room and an anode electrode room. 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