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Plating apparatus, cartridge and copper dissolution tank for use in the plating apparatus, and plating methodUSPTO Application #: 20070235341Title: Plating apparatus, cartridge and copper dissolution tank for use in the plating apparatus, and plating method Abstract: A plating apparatus provided with: three copper dissolution tanks connected to a plating liquid circulation path for supplying copper ions to a plating liquid; a buffer container for supplying a replacement liquid into some of the copper dissolution tanks not in use; and an undiluted replacement liquid supplying section for supplying an undiluted replacement liquid as a source of the replacement liquid into the buffer container. Copper mesh members each prepared by weaving a copper wire, straight copper pipes or copper plates are accommodated as a copper source in each of the copper dissolution tanks. The copper dissolution tanks each include a detachable cartridge, in which the copper mesh members or the like are disposed. (end of abstract)
Agent: Ostrolenk Faber Gerb & Soffen - New York, NY, US Inventors: Yasuhiro Mizohata, Hideaki Matsubara, Yoshihiro Koyama USPTO Applicaton #: 20070235341 - Class: 205081000 (USPTO) Related Patent Categories: Electrolysis: Processes, Compositions Used Therein, And Methods Of Preparing The Compositions, Electrolytic Coating (process, Composition And Method Of Preparing Composition), Involving Measuring, Analyzing, Or Testing The Patent Description & Claims data below is from USPTO Patent Application 20070235341. Brief Patent Description - Full Patent Description - Patent Application Claims BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a plating apparatus for plating a substrate such as a semiconductor wafer with copper, a copper dissolution tank and a cartridge for use in the plating apparatus, and a plating method. [0003] 2. Description of Related Art [0004] In the production of a semiconductor device, a plating process is often performed for plating one surface of a semiconductor wafer (hereinafter referred to simply as "wafer"). A typical plating apparatus for plating a wafer with copper includes a plating vessel which contains a copper-ion-containing plating liquid to be brought into contact with one surface of the wafer, a dissolvable copper anode disposed in the plating vessel, and a cathode to be brought into contact with the wafer. Such a plating apparatus is disclosed in U.S. Pat. No. 6,258,220B1. [0005] For the plating, the cathode is kept in contact with the wafer, and one surface (lower surface) of the wafer is kept in contact with the plating liquid filled in the plating vessel. In this state, the anode and the cathode are electrically energized. Thus, electrons are donated to copper ions in the plating liquid in an interface between the plating liquid and the wafer, so that copper atoms are deposited on the surface of the wafer. On the other hand, copper atoms of the anode are deprived of electrons to leach in the form of copper ions into the plating liquid in an interface between the anode and the plating liquid. The anode functions as a copper supply source for supplying copper ions to the plating liquid. [0006] Thus, copper ions are consumed in the plating liquid to be deposited in the form of copper atoms on the wafer, while being supplied in the corresponding amount from the anode. Therefore, the amount of copper ions in the plating liquid is kept virtually constant. [0007] However, the anode of the plating apparatus is consumed during the repetitive plating process, requiring replacement. The plating vessel has a small size, which is determined according to the size (diameter) of the wafer to be treated. Further, the anode has a relatively great weight. Therefore, the replacement of the anode disposed at a great depth in the plating vessel is laborious. [0008] The plating apparatus is generally disposed in a clean room. Therefore, the clean room is likely to be contaminated with copper due to the scattering of the plating liquid when the anode is replaced. Unintended contamination with copper in other process steps results in deterioration of the characteristics of the device (product). Particularly, a plating liquid containing copper sulfate is liable to cause contamination when it is dried to form powder dust. [0009] When the anode is replaced, the inside of the plating apparatus is exposed to the atmosphere in the clean room. Therefore, the inside of the plating apparatus is also contaminated. Particularly, where the cleanliness of the inside of the cleaning apparatus is set higher than the cleanliness of the clean room, the quality of the product is remarkably deteriorated by the contamination of the inside of the plating apparatus. [0010] The plating process is stably performed only with the surface of the copper anode being covered with a so-called black film. However, the formation of the black film requires preliminary electrical energization after the replacement of the anode. This prolongs the downtime of the apparatus, thereby reducing the capacity utilization rate of the apparatus. [0011] Further, the state of the black film is stabilized only when the anode is electrically energized in the same cycle. However, the plating apparatus is rarely operated in a constant cycle, but is sometimes out of operation. The black film is deteriorated when the plating apparatus is out of operation. Therefore, when the operation of the plating apparatus is thereafter resumed, the plating process cannot properly be performed, reducing a product yield. [0012] Further, slime is often generated from the black film on the surface of the anode. The black film and the slime are liable to be separated from the anode to contaminate the plating liquid. This may adversely affect the plating process. A conceivable approach to the prevention of the adverse effect is to cover the anode with a filter. However, it is difficult to completely cover the anode with the filter, because the anode has a connector for connection to a power source. Where the anode is covered with the filter, the replacement of the anode is more difficult. SUMMARY OF THE INVENTION [0013] It is an object of the present invention to provide a plating apparatus which features easier replacement of a copper supply source. [0014] It is another object of the present invention to provide a plating apparatus which ensures that a copper supply source is replaced without contamination of the surroundings. [0015] It is further another object of the present invention to provide a plating apparatus which ensures proper plating. [0016] It is still another object of the present invention to provide a plating apparatus which features a higher capacity utilization rate. [0017] It is further another object of the present invention to provide a cartridge which features easier replacement of a copper supply source for use in a plating apparatus. [0018] It is still another object of the present invention to provide a cartridge which ensures that a copper supply source is replaced for use in a plating apparatus without contamination of the surroundings. [0019] It is further another object of the present invention to provide a copper dissolution tank which ensures proper plating in a plating apparatus. [0020] It is still another object of the present invention to provide a copper dissolution tank which ensures that a plating apparatus is operated at an increased capacity utilization rate for plating. [0021] It is further another object of the present invention to provide a plating method which ensures proper plating. [0022] It is still another object of the present invention to provide a plating method which ensures that a plating apparatus is operated at an increased capacity utilization rate. Continue reading... Full patent description for Plating apparatus, cartridge and copper dissolution tank for use in the plating apparatus, and plating method Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Plating apparatus, cartridge and copper dissolution tank for use in the plating apparatus, and plating method patent application. ### 1. Sign up (takes 30 seconds). 2. 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