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Plasma source assembly and method of manufacturePlasma source assembly and method of manufacture description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20070034154, Plasma source assembly and method of manufacture. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a divisional application of U.S. patent application Ser. No. 10/601,590, filed Jun. 24, 2003, which is a non-provisional application claiming priority under 35 USC .sctn. 119(e) of U.S. Application No. 60/390,361, filed on Jun. 24, 2002. This application is related to U.S. Application Nos. 60/291,337, filed May 17, 2001 and 09/774,182, filed on Feb. 5, 2001, now U.S. Pat. No. 6,491,742, issued Dec. 10, 2002. The entire contents of each of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to manufacturing of semiconductor integrated circuits. [0004] 2. Discussion of the Background [0005] Manufacturers of semiconductor integrated circuits are faced with intense competitive pressure to improve their products and processes used to fabricate the products. The manufacturers have a large business motivation to lower production costs by improving product throughput, quality and complexity. Additionally, manufacturers have a need for repeatability and consistency in the assembly and functioning of semiconductor fabrication equipment. Accordingly, semiconductor manufacturers strive to formulate a low cost way to manufacture high quality process equipment. [0006] One goal of semiconductor manufacturers is to improve tool performance at a low cost. Another goal is to make process equipment function the same regardless of particular hardware sampled. The company that can enhance tool performance without increasing tool cost is in a position to increase profit margins. In cyclical industries such as the semiconductor capital equipment industry, increased profit margins can have a dramatic impact on market penetration. [0007] For many years Inductively Coupled Plasma (ICP) sources have been used in a variety of applications. Most recently, low pressure (<100 mTorr) ICP sources have been used in wafer production where plasmas are required to deliver high densities of ions, electrons and radicals with high uniformity over wafer diameters of 200 mm and larger. These plasma sources need to deliver ions that are uniform in density and energy distribution while keeping ion and electron energy very low. [0008] The Electrostatically Shielded Radio Frequency (ESRF) plasma source is a type of ICP source which is particularly useful in applications where substrate materials are susceptible to damage from high energy plasma ions or electrons, uncontrolled bias voltages and thermal fluxes. ESRF sources feature pure inductive coupling with reduced capacitive coupling. The radio frequency (RF) power produces only plasma density and induces very little voltage on the plasma. This inductive coupling is sufficiently devoid of capacitive coupling so that the plasma does not search for counter electrodes. The plasma remains mainly within the process (dielectric) chamber at all powers and pressures. [0009] The main components of an ESRF ICP processing system are depicted in the generic FIG. 1. The ESRF ICP processing system 10 includes a process chamber 20 with a wafer and chuck assembly 30 provided therein. A gas inject assembly 40 is provided opposite the wafer and chuck assembly 30. A plasma region or area 22 is provided adjacent a dielectric chamber wall 60 in between the wafer and chuck assembly 30 and the gas inject assembly 40. [0010] The plasma source is composed of several main elements and is affixed to an opening of a suitable process chamber 20. A wafer that is being processed is located on the chuck assembly 30. The plasma source comprises a resonator chamber or cavity 72 bounded by an outer shield or housing 50 and the dielectric chamber wall 60, within which a helical coil 90 is mounted. The outer shield 50 and the dielectric chamber wall 60 further define a fluid cooling area 70, within which the helical coil 90 is immersed. The dielectric chamber wall 60 contains the plasma area 22 of the plasma source. Furthermore, the dielectric chamber wall 60 has appropriate sealing devices to seal cooling fluid within fluid cooling area 70 and maintain the process pressure within plasma area 22 at appropriate levels. Additionally, an electrostatic shield 80 is provided on an outer surface of the dielectric chamber wall 60 in an interior of the fluid cooling area 70. [0011] In the construction of ESRF source assemblies, there are several elements that are expensive to fabricate for various reasons. The outer shield or housing can be the most expensive part in the source. It can be fabricated from several aluminum parts and subsequently furnace or dip brazed to form a singular assembly. The interface of these parts must be machined to tolerances required in the brazing process. Once machined, the parts are then assembled utilizing an appropriate holding fixture and brazed using the specified processes. Various machining operations must then be performed on the resulting brazed assembly before it is ready for use. [0012] Another problem seen in ESRF plasma sources is the method and repeatability of mounting the helical coil. In ESRF plasma sources, particularly those sources comprising a quarter-wave or half-wave resonant coil, the coil is tuned to a particular frequency. In order to tune the helical coil to a particular frequency, a labor intensive process of adjusting the length of the coil is involved. Once the coil is tuned, changes in coil position can adversely affect the tuning. SUMMARY OF THE INVENTION [0013] The present invention advantageously provides a plasma source assembly including an outer shield, a dielectric chamber wall, and a helical coil. The helical coil is advantageously mounted within a cavity bounded by the outer shield and the dielectric chamber wall. [0014] It is an object of the invention to produce the outer shield (housing) in a very cost effective manner that requires no special processes or machining after original fabrication of the parts. Such a source assembly configuration may allow quick changes and modifications to the outer shield housing and electrostatic shield using many original parts, without other special processes or special tools. [0015] In the preferred embodiment of the present invention, the plasma source assembly further includes an electrostatic shield provided outside the dielectric chamber wall, forming an interior of the cavity. The plasma source assembly preferably includes a plenum cooling plate defining a manifold configured to supply cooling fluid to the cavity and a gas inject assembly attachable to the outer shield. [0016] The plasma source assembly preferably includes structure for stacking and detachably joining a plurality of plates to form the outer shield, and structure for constructing the gas inject assembly and the dielectric chamber wall to be removable from the plasma source assembly without using a tool. The preferred embodiment of the present invention includes structure for circulating cooling fluid throughout the cavity and the gas inject assembly, and structure for removing bubbles from the cooling fluid within the cavity. [0017] It is another object of the present invention to provide a coil support assembly and method that supports, separates, and holds the helical coil in such manner that the plasma source only needs to be tuned once. Such a manufacturing method makes helical coil tuning repeatable even after complete disassembly and subsequent reassembly of the entire plasma source assembly. [0018] It is a further object to circulate cooling fluid throughout the plasma source and the gas inject assembly in a way that promotes efficient cooling, and also removes and discourages the forming of any bubbles in the cooling fluid. Air bubbles, especially bubbles located inside the resonator cavity, degrade the insulating properties of the dielectric cooling fluid. Maintenance and cleaning are needed to ensure that acceptable process conditions are met. One aspect of maintenance and cleaning is the removal of the dielectric chamber wall for wet cleaning. A goal of maintenance and cleaning operations is short machine downtime. Thus, preferably the dielectric chamber wall (process tube) may be removed and the inject assembly may be removed and/or replaced for maintenance purposes quickly without using tools. BRIEF DESCRIPTION OF THE DRAWINGS [0019] A more complete appreciation of the invention and many of the attendant advantages thereof will become readily apparent with reference to the following detailed description, particularly when considered in conjunction with the accompanying drawings, in which: [0020] FIG. 1 is a general section view of an electrostatically shielded radio frequency (ESRF) inductively coupled plasma (ICP) source; Continue reading about Plasma source assembly and method of manufacture... Full patent description for Plasma source assembly and method of manufacture Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Plasma source assembly and method of manufacture patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. 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