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Plasma processing method and apparatus, and storage mediumUSPTO Application #: 20080105378Title: Plasma processing method and apparatus, and storage medium Abstract: A plasma processing method performs a plasma processing on a substrate mounted on a mounting table installed in an airtight processing chamber, the mounting table having a smaller size than the substrate. The substrate having a surface, on which a resist mark is formed, is mounted on the mounting table and then electrostatically adsorbed on the mounting table by applying a voltage to an electrostatic chuck. The surface of the substrate is etched by using a plasma of an etching gas while the substrate is cooled through a heat transfer between the substrate and the mounting table via a thermally conductive gas supplied between a top surface of the mounting table and a bottom surface of the substrate. The supply of the thermally conductive gas is stopped, and the resist mask on the substrate is ashed by using a plasma of an ashing gas containing 02. (end of abstract) Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C. - Alexandria, VA, US Inventor: Masaru SUGIMOTO USPTO Applicaton #: 20080105378 - Class: 156345240 (USPTO)
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