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Organic thin-film transistor manufacturing method, organic thin-film transistor, and organic thin-film transistor sheet

USPTO Application #: 20070221918
Title: Organic thin-film transistor manufacturing method, organic thin-film transistor, and organic thin-film transistor sheet
Abstract: An organic thin-film transistor is disclosed. The transistor may include a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer protective layer, a source electrode, and a drain electrode, wherein a layer formed on the organic semiconductor layer may have a light transmittance of not more than 10%. (end of abstract)
Agent: Cantor Colburn, LLP - Bloomfield, CT, US
Inventor: Katsura Hirai
USPTO Applicaton #: 20070221918 - Class: 257040000 (USPTO)
Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Organic Semiconductor Material
The Patent Description & Claims data below is from USPTO Patent Application 20070221918.
Brief Patent Description - Full Patent Description - Patent Application Claims  monitor keywords

CROSS REFERENCE TO RELATED APPLICATION

[0001] The present application is a continuation application under 35 U.S.C. .sctn.120 of U.S. patent application Ser. No. 11/074,287 filed on Mar. 7, 2005, the entire contents of which are incorporated herein by reference. The 11/074,287 application is a divisional application under 35 U.S.C. .sctn.120 of U.S. patent application Ser. No. 10/742,194 filed on Dec. 19, 2003, the entire contents of which are incorporated herein by reference. The 10/742,194 application claimed the benefit of the date of the earlier filed Japanese Patent Application No. JP 2002-376793 filed Dec. 26, 2002. Priority to all of the above applications is claimed herein also.

FIELD OF THE INVENTION

[0002] The present invention relates to an organic thin-film transistor manufacturing method, an organic thin-film transistor manufactured by the method, an organic thin-film transistor, and an organic thin-film transistor sheet.

BACKGROUND OF THE INVENTION

[0003] With the spread of information terminals, there are increasing demands for a flat panel display that serves as a display for a computer. Further, with development of the information technology, there has been increased a chance for information offered in a form of a sheet of paper medium in the past to be offered in an electronic form. An electronic paper or a digital paper is demanded increasingly as a display medium for a mobile that is thin, lightweight and handy.

[0004] In the case of a display device of a flat sheet type, a display medium is generally formed using an element that employs a liquid crystal, organic EL or electrophoresis method. In the display medium of this kind, a technology for using an active driving element comprised of a thin-film transistor (TFT), serving as an image driving element, is the main current for ensuring uniform image brightness and an image rewriting speed.

[0005] The TFT is manufactured by a process comprising forming, on a glass substrate, a semiconductor layer of a-Si (amorphous silicone) or p-Si (poly-silicone) and metal films of source, drain and gate electrodes, in the order. In the manufacture of a flat panel display employing such a TFT, a photolithography step with high precision is required in addition to a thin layer forming step requiring a vacuum line carrying out a CVD method or a sputtering method or a high temperature treatment step, which results in great increase of manufacturing cost or running cost. Recent demand for a large-sized display panel further increases those costs described above.

[0006] In order to overcome the above-described defects, an organic thin-film transistor employing an organic semiconducting material has been extensively studied (refer to Japanese Patent O.P.I. Publication No. 10-19000 and "Advanced Material", 2002, No. 2, p. 99 (review)). Since the organic thin-film transistor can be manufactured at low temperature employing a lightweight substrate difficult to be broken, a flexible display employing a resin film as a substrate can be realized (refer to SID '02 Digest P. 57). Further, employing an organic semiconducting material allowing a wet process such as a printing method or a coating method, a display manufacturing process can be realized which provides excellent productivity and reduced cost.

[0007] However, an organic thin-film transistor, when allowed to stand in air, deteriorates, resulting in lowering of transistor properties. Further, an organic thin-film transistor, when manufactured by a process comprising forming an organic semiconductor layer, followed by coating of a light sensitive resin layer, and development of the light sensitive resin layer air, results in deterioration of transistor properties due to a solvent used for coating or components contained in a developer used for development.

[0008] An organic thin-film transistor employing a substrate such as a resin plate or a resin film is easily folded as compared with that employing a glass plate. Therefore, the former has problem in that properties as a transistor deteriorate due to folding, or due to light.

SUMMARY OF THE INVENTION

[0009] The present invention has been made in view of the above. An object of the invention is to provide an organic thin-film transistor manufacturing method minimizing deterioration during the manufacture of transistor properties and minimizing deterioration with time or due to folding of the transistor properties, and an organic thin-film transistor manufactured by the method. Another object of the invention is to provide an organic thin-film transistor and an organic thin-film transistor sheet, each minimizing deterioration with time or due to folding of the transistor properties.

BRIEF DESCRIPTION OF THE DRAWINGS

Brief Explanation of the Drawings

[0010] FIG. 1 is a structural example of the organic thin-film transistor of the invention (top gate type).

[0011] FIG. 2 is a structural example of the organic thin-film transistor of the invention (bottom gate type).

[0012] FIG. 3 is a schematic equivalent circuit diagram of one example of the organic thin-film transistor sheet of the invention.

[0013] FIGS. 4(1) through 4(8) are illustrations for explaining one embodiment of the organic thin-film transistor manufacturing method of the invention.

[0014] FIG. 5 is an illustration showing one structural example of a comparative organic thin-film transistor.

[0015] FIG. 6 is an illustration showing another structural example of a comparative organic thin-film transistor.

[0016] FIG. 7 is an illustration showing one structural example of an inventive organic thin-film transistor.

[0017] FIG. 8 is an illustration showing another structural example of an inventive organic thin-film transistor.

[0018] FIGS. 9(1) through 9(3) are illustrations for explaining another embodiment of the organic thin-film transistor manufacturing method of the invention.

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