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Organic el device

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Organic el device


(iii) the difference between the maximum value and the minimum value of the ratio of the number of the carbon atoms in the distribution curve of carbon being 5 atom % or more. (ii) the distribution curve of carbon having at least one extremum, and (i) in 90% or more of the region of the gas barrier layer in the thickness direction, the ratio of the number of the silicon atoms being the second largest value, An organic EL device including a first film, a second film disposed facing the first film, and an organic EL element interposed between the first film and the second film. The second film has a gas barrier layer containing silicon atoms, oxygen atoms and carbon atoms. The distribution curve of silicon, the distribution curve of oxygen and the distribution curve of carbon of the gas barrier layer meet the following conditions:
Related Terms: Atoms Carbon Atoms

Browse recent Sumitomo Chemical Company, Limited patents - Chuo-ku, Tokyo, JP
USPTO Applicaton #: #20130328025 - Class: 257 40 (USPTO) - 12/12/13 - Class 257 
Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Organic Semiconductor Material

Inventors: Yoshinobu Ono

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The Patent Description & Claims data below is from USPTO Patent Application 20130328025, Organic el device.

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TECHNICAL FIELD

The present invention relates to an organic EL device, an illuminating device, a surface light source device and a display device.

BACKGROUND ART

An organic EL (Electro Luminescence) element has a configuration in which plural thin films are stacked. By setting appropriately the thickness, the material and the like of the respective thin films, it is possible to give flexibility to the element itself. When providing such an organic EL element on a flexible film, a whole device on which the organic EL element is mounted can become a flexible device.

The organic EL element deteriorates by being exposed to the outside air, and thus, is usually provided on a film having high gas barrier characteristics that is difficult to pass oxygen, moisture and the like therethrough. As films having such high gas barrier characteristics, there is proposed a film formed by depositing, on a plastic base material, a thin film composed of inorganic oxides such as silicon oxide, silicon nitride, silicon nitride oxide and aluminum oxide.

As a method for depositing a thin film composed of an inorganic oxide on a plastic base material, there are known physical vapor deposition (PVD) methods such as a vacuum evaporation method, a sputtering method and an ion plating method, and chemical vapor deposition (CVD) methods such as low pressure chemical vapor deposition and plasma chemical vapor deposition. As a film having high gas barrier characteristics, using such a deposition method, for example, in Japanese Unexamined Patent Application Publication No. 4-89236 (Patent Literature 1), there is disclosed a film having a stacked evaporated film layer formed by stacking two or more layers of evaporated films of a silicon oxide.

In contrast, there is disclosed a film having a ceramic-based inorganic barrier film and a polymer film which are stacked alternately, in Japanese Unexamined Patent Application Publication (Translation of PCT Application) No. 2002-532850 (Patent Literature 2).

CITATION LIST Patent Literature

[Patent Literature 1] Japanese Unexamined Patent Application Publication No. 4-89236

[Patent Literature 2] Japanese Unexamined Patent Application Publication (Translation of PCT Application) No. 2002-532850

SUMMARY

OF INVENTION Technical Problem

However, the film described in Patent Literature 1 had problems in which the gas barrier characteristics were not necessarily sufficient and, by being subjected to bending, the gas barrier characteristics lowered.

According to the film described in Patent Literature 2, the enhancement of the gas barrier characteristics, and the suppression of lowering of the gas barrier characteristics caused by bending are expected. However, there was a problem in which the process for manufacturing the film described in Patent Literature 2 was complicated and required long manufacturing time, because of an inorganic barrier film and a polymer film being stacked alternately.

A purpose of the present invention is to provide an organic EL device including a film that is provided with high gas barrier characteristics, has gas barrier characteristics that are difficult to be lowered by bending, and is capable of being formed in a short time by simple process.

Solution to Problem

The present invention relates to an organic EL element including a first film, a second film disposed facing the first film, and an organic EL element disposed between the first film and the second film. The second film seals the organic EL element in conjunction with the first film. The second film has a gas barrier layer containing silicon (silicon atoms), oxygen (oxygen atoms) and carbon (carbon atoms). A distribution curve of silicon, a distribution curve of oxygen and a distribution curve of carbon each showing the relationship between the ratio of the amount (number) of the silicon atoms (the atomic ratio of the silicon), the ratio of the amount (number) of the oxygen atoms (the atomic ratio of the oxygen) and the ratio (number) of the carbon atoms (the atomic ratio of the carbon) relative to the total amount of silicon atoms, oxygen atoms and carbon atoms, and the distance from one surface of the gas barrier layer in the thickness direction (in the film thickness direction) of the gas barrier layer, meets the following conditions (i) to (iii).

(i) In 90% or more of the region of the gas barrier layer in the thickness direction (film thickness direction), the atomic ratio of silicon is the second largest value among the atomic ratio of silicon, the atomic ratio of oxygen and the atomic ratio of carbon.

(ii) The distribution curve of carbon has at least one extremum.

(iii) The absolute value of the difference between the maximum value and the minimum value of the atomic ratio of the carbon in the distribution curve of carbon is 5 atom % (at %) or more.

The first film may be a metallic film.

The first film may have a second gas barrier layer containing silicon, oxygen and carbon. The distribution curve of silicon, the distribution curve of oxygen and the distribution curve of carbon of the second gas barrier layer according to an embodiment meet the conditions (i), (ii) and (iii).

In another aspect, the present invention relates to an illuminating device, a surface light source device and a display device having the organic EL device.

Advantageous Effects of Invention

According to the present invention, it is possible to realize an organic EL device including a film that is provided with high gas barrier characteristics, has gas barrier characteristics hardly lowered by bending, and is capable of being formed in a short time by a simple process.



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Molecular memory
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Active solid-state devices (e.g., transistors, solid-state diodes)
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stats Patent Info
Application #
US 20130328025 A1
Publish Date
12/12/2013
Document #
13877767
File Date
10/04/2011
USPTO Class
257 40
Other USPTO Classes
International Class
01L51/52
Drawings
13


Atoms
Carbon Atoms


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