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Optical proximity correction (opc) processing method for preventing the occurrence of off-gridOptical proximity correction (opc) processing method for preventing the occurrence of off-grid description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20080052661, Optical proximity correction (opc) processing method for preventing the occurrence of off-grid. Brief Patent Description - Full Patent Description - Patent Application Claims
[0001]This application claims the benefit under 35 U.S.C. 119 to Korean Patent Application No. 10-2006-0080095, filed on Aug. 23, 2006, which is hereby incorporated by reference in its entirety. BACKGROUND [0002]In many semiconductor applications, semiconductor devices are relatively highly integrated (e.g. the size of semiconductor devices is relatively small). In relatively highly integrated semiconductor devices, an arrangement density may be relatively high. In relatively highly integrated semiconductor devices, critical dimension of a mask pattern may be close to resolution thresholds of optical exposure devices (e.g. an optical light-exposure device). [0003]Optical proximity correction (OPC) may be used to compensate for resolution limitations in a photolithography process. In OPC, a mask pattern for a test may be manufactured as a test pattern. A pattern may be transcribed onto a semiconductor substrate using the mask pattern through photolithography. Etching of the pattern may be performed, such that a semiconductor pattern for a test is manufactured on the substrate. [0004]OPC may be utilized with design rules that are relatively small. However, bridge and/or pinching issues may arise due to OPC limitations, which may result in complications (e.g. a critical yield drop). For example, if a particular OPC can not draw a mask pattern according to a 0.16 .mu.m semiconductor design rule due to photolithography resolution limitations, shrinking (or minimizing) may be performed using a 0.18 .mu.m mask pattern to achieve 0.16 .mu.m dimensions. When shrinking is performed, an off-grid phenomenon may occur. [0005]An off-grid phenomenon may have a negative influence in many OPC applications (e.g. model-based OPC and rule-based OPC). For example, as illustrated in example FIG. 1A, if a mask is designed in a beam spot having a 4 nm size on the basis of a line critical dimension (CD) of 190 nm, a 15 nm off-grid phenomenon occurs at a pitch of 390 nm. However, for example, an off-grid phenomenon may not occur in a pitch between 450 nm and 515 nm. [0006]As illustrated in example FIG. 1B, a graphic design system (GDS) may be divided into several pattern pieces (e.g. pattern piece 1, pattern piece 2, pattern piece 4, pattern piece 5, and/or pattern piece 6) to manufacture a mask pattern 3. The pattern pieces may overlap each other to form mask pattern 3. [0007]Pattern piece 1, pattern piece 2, pattern piece 4, pattern piece 5, and/or pattern piece 6 may have different sizes. If pattern pieces are shrunk, mask pattern 3 may not satisfy a 1 nm grid of a minimum database unit. For example, a CD pattern of 105 nm is shrunk by 90%, the resulting CD pattern will be 94.5 nm. However, in this example, the size of the CD pattern will be randomly either 95 nm or 94 nm, since the size of 94.5 nm can not be drawn. Accordingly, as illustrated in example FIG. 1C, the off-grid phenomenon occurs at highlighted section A and highlighted section B, which may result in an unintended mask pattern. SUMMARY [0008]Embodiments relate to an optical proximity correction (OPC) processing method which may prevent and/or minimize an off-grid phenomenon. In embodiments, an OPC processing method may prevent and/or minimize an off-grid phenomenon when miniaturizing a pattern. [0009]In embodiments, an optical proximity correction (OPC) processing method may include at least one of the following steps: Detecting coordinate values of individual piece patterns constituting a graphic design system (GDS). Merging to the form of a specific pattern, composed of outermost coordinate values, on the basis of the detected coordinate values. Shrinking the merged GDS pattern and forming a GDS pattern having a desired magnifying power. Performing an optical proximity correction (OPC) process on the GDS pattern having the desired magnifying power. [0010]In embodiments, the step of detecting/storing the coordinate values of the piece patterns includes configuring the individual piece patterns in the form of a square pattern, with the coordinate values of each piece pattern indicating coordinate values of each edge of the squared piece pattern. In embodiments, the step of merging includes interconnecting the outermost coordinate values and forming a single pattern drawn by a single edge line. In embodiment, the step of forming the GDS pattern having the desired magnifying power includes shrinking the merged GDS patterns on the basis of a specific point of any one of the merged GDS patterns. In embodiments, the method includes a step of forming a predetermined mask pattern by transferring the OPC-processed GDS pattern information to a mask pattern fabrication device. DRAWINGS [0011]Example FIG. 1A is a graph illustrating an off-grid phenomenon. [0012]Example FIG. 1B illustrates a method of manufacturing a mask pattern. [0013]Example FIG. 1C illustrates a mask pattern including an off-grid phenomenon. [0014]Example FIG. 2 is a flow chart illustrating an OPC processing method, according to embodiments. [0015]Example FIG. 3A is a conceptual diagram illustrating a mask pattern processed by an OPC method, according to embodiments. [0016]Example FIG. 3B is a conceptual diagram illustrating a mask pattern, according to embodiments. DESCRIPTION [0017]Example FIG. 2 is a flow chart illustrating an OPC processing method, according to embodiments. An OPC processing method, in accordance with embodiments, may detect coordinate values of parts of a GDS pattern that may generate an off-grid phenomenon (S201). In embodiments, coordinate values that may generate an off-grid phenomenon may be from GDS patterns generated by a minimum jog area and/or an auto-CAD task. Detected coordinate values may be stored as database (DB) data, in accordance with embodiments. [0018]In embodiments, an OPC processing method may detect coordinate values of individual piece 4, individual piece 5, and individual piece 6 from GDS pattern 3 illustrated in example FIG. 1B. For example, an OPC processing method may detect edge coordinate values of individual piece 4, individual piece 5, and individual piece 6 and store detected edge coordinate values as DB data in a memory, according to embodiments. [0019]In embodiments, an OPC processing method may merge the detected individual pieces (e.g. individual pieces 4, 5, and 6 of GDS pattern 3) to make the form of a single pattern defined by outermost coordinate values (step S202). For example, a merge may detect outermost coordinate values of coordinate values of individual pieces 4, 5, and 6 included in GDS pattern 3 (illustrated in example FIG. 1B) and interconnect the outermost coordinate values to form a single edge line (e.g. edge line of single pattern 30 illustrated in example FIG. 3A). Accordingly, instead of a GDS pattern that includes multiple individual pieces (e.g. individual pieces 4, 5, and 6 of example FIG. 1B), GDS pattern 30 of example FIG. 3A has as a single clear GDS pattern, in accordance with embodiments. [0020]In embodiments, GDS pattern 30 may be shrunk (step S203), as illustrated in example FIG. 3A. A shrunk pattern may result in a pattern with a predetermined shape and having a desired magnifying power, in accordance with embodiments. For example, if a mask pattern for a 0.18 .mu.m--grade semiconductor design shrinks to form a mask pattern for a 0.16 .mu.m--grade semiconductor design rule, an OPC processing method may shrink the merged GDS pattern 30 by 89% based on a predetermined point C of the GDS pattern area. Accordingly, a GDS pattern based on a 0.16 .mu.m--grade semiconductor design can be formed, as shown in FIG. 3A, in accordance with embodiments. Continue reading about Optical proximity correction (opc) processing method for preventing the occurrence of off-grid... 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