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  Monolithic mosfet and schottky diode for mobile phone boost converterUSPTO Application #: 20060163658Title: Monolithic mosfet and schottky diode for mobile phone boost converter Abstract: A cell phone has a plurality of interconnected electronic components for performing the electrical functions of the phone. A DC/DC converter provides an operating voltage which is applied to power supply terminals of the plurality of interconnected electronic components. The DC/DC converter uses a monolithic semiconductor device containing a power metal oxide semiconductor field effect transistor (MOSFET) and Schottky diode. The semiconductor device has the lateral diffused MOSFET formed on a surface of the semiconductor device. The MOSFET is formed with a plurality conduction fingers. The Schottky diode is also formed on the surface of the semiconductor device and integrated between the plurality of conduction fingers of the MOSFET. The drain of the MOSFET is connected to the anode of the diode on the surface of the monolithic semiconductor device. (end of abstract)
Agent: Quarles & Brady LLP - Phoenix, AZ, US Inventors: Samuel J. Anderson, David N. Okada USPTO Applicaton #: 20060163658 - Class: 257355000 (USPTO) Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Field Effect Device, Having Insulated Electrode (e.g., Mosfet, Mos Diode), With Overvoltage Protective Means The Patent Description & Claims data below is from USPTO Patent Application 20060163658. Brief Patent Description - Full Patent Description - Patent Application Claims
CLAIM TO DOMESTIC PRIORITY [0001] The present non-provisional patent application claims priority to provisional application Ser. No. 60/646,120, entitled "Monolithic MOSFET and Schottky Diode for Mobile Phone Boost Converter," and filed on Jan. 21, 2005, by Anderson et al. FIELD OF THE INVENTION [0002] The present invention relates in general to electronic circuits and semiconductor devices and, more particularly, to an integrated or monolithic MOSFET and Schottky diode for mobile phone boost converters. BACKGROUND OF THE INVENTION [0003] Most modern electronic equipment require a power supply to provide a direct current (DC) operating potential to the electronic components contained therein. Common types of electronic equipment which use DC power supplies include cell phones, personal computers, energy systems, telecommunication systems, audio-video equipment, consumer electronics, automotive components, and other devices which utilize integrated circuits, semiconductor chips, or otherwise require DC operating potential. Most, if not all, semiconductor components require a low voltage DC operating potential. [0004] Not all semiconductor devices or electronic components operate with the same DC potential. Some integrated circuits (ICs) or discrete semiconductor devices require a higher DC supply voltage than others. A common approach in electronic systems requiring multiple DC operating voltage levels is to convert a base DC operating potential to other voltage levels. For example, the battery or main power supply to the electronic system may provide 3 volts DC. One or more DC/DC boost converters within the electronic system increase the voltage level to say 5 volts DC or 12 volts DC to supply power to certain components within the system. [0005] The DC/DC boost converter uses an inductor or coil having a first terminal coupled to the converter input and power metal oxide semiconductor field effect transistor (MOSFET) coupled between a second terminal of the coil and ground. The conduction through MOSFET is controlled by a pulse width modulated (PWM) controller. The PWM controller turns on the power MOSFET to enable a current conduction path through the coil and thereby store energy in the coil. When the PWM controller turns off the power MOSFET, the energy stored in the coil is transferred through a Schottky diode to an output of the DC/DC boost converter. The output voltage of the converter is used to generate a feedback signal to the PWM controller to control the on-time of the power MOSFET and regulate the DC output voltage of the boost converter. [0006] The power MOSFET and Schottky diode are typically discrete components in the DC/DC boost converter. In some electronic systems, such as cellular phones, space on the printed circuit board (PCB) is a premium. As cell phones reduce in feature size, the space required for discrete components becomes a design issue. In addition to surface area limitations, the need for low profile and small footprint semiconductor devices continues to grow as cell phones become thinner and smaller in design. [0007] A need exists for semiconductor devices and packages that are compatible with electronic systems having limited surface areas and low profiles. SUMMARY OF THE INVENTION [0008] In one embodiment, the present invention is a monolithic semiconductor device, comprising a lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) formed with a plurality conduction fingers on a surface of the monolithic semiconductor device. A diode is formed on the surface of the monolithic semiconductor device and integrated between the plurality of conduction fingers of the LDMOSFET. A first conduction terminal of the LDMOSFET is connected to a first terminal of the diode on the surface of the monolithic semiconductor device. [0009] In another embodiment, the present invention is a semiconductor package, comprising a monolithic semiconductor device including a lateral double diffused metal oxide semiconductor field effect transistor formed on a surface of the monolithic semiconductor device and a diode formed on the surface of the monolithic semiconductor device and integrated between a plurality of conduction fingers of the LDMOSFET. [0010] In another embodiment, the present invention is a monolithic semiconductor device, comprising a lateral double diffused metal oxide semiconductor field effect transistor formed with a plurality conduction fingers on a surface of the monolithic semiconductor device. A diode is formed on the surface of the monolithic semiconductor device and integrated between the plurality of conduction fingers of the LDMOSFET. [0011] In another embodiment, the present invention is a method of making a monolithic semiconductor device comprising the steps of forming a lateral double diffused metal oxide semiconductor field effect transistor with a plurality conduction fingers on a surface of the monolithic semiconductor device, and forming a diode on the surface of the monolithic semiconductor device integrated between the plurality of conduction fingers of the LDMOSFET. BRIEF DESCRIPTION OF THE DRAWINGS [0012] FIG. 1 illustrates a cellular telephone with a printed circuit board containing integrated circuits and semiconductor devices; [0013] FIG. 2 is a schematic diagram of a DC/DC boost converter; [0014] FIG. 3 is a monolithic integrated circuit package containing the power MOSFET and Schottky diode of FIG. 2; [0015] FIG. 4 is a cross-sectional view of the monolithic power MOSFET and Schottky diode; and [0016] FIG. 5 is a top view of the monolithic power MOSFET and Schottky diode. DETAILED DESCRIPTION OF THE DRAWINGS [0017] The present invention is described in one or more embodiments in the following description with reference to the Figures, in which like numerals represent the same or similar elements. While the invention is described in terms of the best mode for achieving the invention's objectives, it will be appreciated by those skilled in the art that it is intended to cover alternatives, modifications, and equivalents as may be included within the spirit and scope of the invention as defined by the appended claims and their equivalents as supported by the following disclosure and drawings. [0018] Referring to FIG. 1, a cellular phone 10 is shown having a front body 12 housing keyboard 14 and liquid crystal display (LCD) 16. Cell phone 10 further includes a rear body 20 housing PCB 22. PCB 22 is separated into radio frequency (RF) signal processing section 24 and digital signal processing section 26, separated by shielding. The RF signal processing section 24 includes electronic components such as RF amplifier, modulator, demodulator, oscillator, and power management. The RF signal processing section receives RF signals, downconverts, and demodulates the signals to baseband signals. The digital signal processing section 24 includes electronic components such as microprocessor, analog to digital converter, digital to analog converter, memory, and control logic. The digital signal processing section 26 processes the baseband information so the user can hear and speak over the cell phone. Continue reading... Full patent description for Monolithic mosfet and schottky diode for mobile phone boost converter Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Monolithic mosfet and schottky diode for mobile phone boost converter patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. Start now! - Receive info on patent apps like Monolithic mosfet and schottky diode for mobile phone boost converter or other areas of interest. ### Previous Patent Application: Method to reduce leakage in a protection diode structure Next Patent Application: Compound semiconductor switch circuit device Industry Class: Active solid-state devices (e.g., transistors, solid-state diodes) ### FreshPatents.com Support Thank you for viewing the Monolithic mosfet and schottky diode for mobile phone boost converter patent info. IP-related news and info Results in 3.99158 seconds Other interesting Feshpatents.com categories: Novartis , Pfizer , Philips , Polaroid , Procter & Gamble , |
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