|Miscellaneous active electrical nonlinear devices, circuits, and systems patents - Monitor Patents|
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Miscellaneous active electrical nonlinear devices, circuits, and systemsBelow are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 03/06/2014 > 55 patent applications in 33 patent subcategories.
20140062533 - Adaptive voltage adjustment based on temperature value: Various embodiments of a method and apparatus for performing adaptive voltage adjustment based on temperature value are disclosed. In one embodiment, and integrated circuit (IC) includes logic circuitry having at least one temperature sensor therein. The IC also includes a power management circuit coupled to receive temperature readings from the... Agent:
20140062534 - Integrated circuit: An integrated circuit includes a plurality of semiconductor devices. Each of the semiconductor devices includes an internal voltage generation unit configured to generate a plurality of internal voltages, a voltage select output unit configured to output a default voltage of a plurality of internal voltages to a preset pad in... Agent: Sk Hynix Inc.
20140062535 - Power-on reset circuit: A power-on reset circuit is disclosed. The power-on reset circuit includes a first resistor; a first transistor, including a first terminal coupled to a second terminal of the first resistor, and a control terminal for receiving a reference voltage; a second resistor, including a first terminal coupled to a second... Agent: Anpec Electronics Corporation
20140062536 - Output module and method for operating the output module: A method for operating an output module having an output circuit by which a voltage resulting in a current is connected to a load connected to an output, wherein a first driver module is operated and activated via a first control input to connect a voltage to the output, a... Agent: Siemens Aktiengesellschaft
20140062537 - Frequency synthesizer: Disclosed is a frequency synthesizer including first and second shift register circuits 3a and 3b each for outputting PLL setting data on a rising edge of a load enable signal, first and second fractional modulators 4a and 4b each for generating dividing number control data on the basis of the... Agent: Mitsubishi Electric Corporation
20140062539 - Current controlled actuator driver with improved accuracy at low current: Various exemplary embodiments relate to a current driver for controlling a current source controlled by an alternating current (AC) signal, including: a current sensor configured to measure an output current from the current source; a threshold detector configured to detect when the measured current is below a threshold value; and... Agent: Nxp B.v.
20140062540 - Output subassembly and method of operating the output subassembly: A method for operating an output subassembly in which a first driver module is operated between a power supply connection on the output subassembly, and an output and is actuated via a first control input to connect the voltage to the output, wherein a second driver module is operated in... Agent: Siemens Aktiengesellschaft
20140062538 - Systems and methods for de-emphasis level calibration in voltage mode drivers: A voltage mode driver circuit includes a plurality of VMD cells and a calibration component. The plurality of VMD cells are configured to generate a calibrated emphasis level according to a calibration signal. The calibration component is configured to determine a voltage dependence effect. Additionally, the calibration component is configured... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20140062541 - Drive unit for driving voltage-driven element: A controller of a drive unit is configured so as to control a voltage supplied to a gate resistor of a voltage-driven element by using of a voltage of a feedback connector when an electrical connection between the feedback connector and the gate resistor of the voltage-driven element is ensured.... Agent: Toyota Jidosha Kabushiki Kaisha
20140062543 - Dynamic driver circuit: A circuit usable as a word line driver includes a driver that switches in response to a voltage on a control node, and a circuit supplying a voltage to the control node. The circuit that applies a voltage to control node provides a first static current tending to pull the... Agent: Macronix International Co., Ltd.
20140062542 - Gate driver circuit and method: A driver circuit includes first switch, configured to selectively couple a first driving node to a power supply node, and a second switch, configured to selectively couple a second driving node to a ground node. The first driving node is coupled to each transistor in a first set of PMOS... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20140062544 - Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices: Disclosed is a semiconductor device arrangement including a first semiconductor device having a load path, and a plurality of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected... Agent: Infineon Technologies Austria Ag
20140062547 - Core voltage reset systems and methods with wide noise margin: Presented systems and methods facilitate efficient reset operation. In one embodiment, a system comprises a core domain portion an I/O domain portion and a core reset I/O by-pass component. The core domain portion is configured to operate at a nominal core domain voltage level. The I/O domain portion configured to... Agent: Nvidia Corporation
20140062545 - Method and apparatus for reducing the clock kick-back of adc comparators while maintaining transistor matching behavior: The core concept of this ADC is the high-speed fully-differential comparators which are clocked at 2.64 GHz and used in a 60 GHz transceiver. The comparator consists of a pre-amplifier stage, a capture stage, a regeneration cell and an output latch. The pre-amplifier stage is not clocked; therefore, the pre-amplifier... Agent: Tensorcom, Inc.
20140062546 - Semiconductor device and method of driving the same: A semiconductor device includes a division unit configured to divide an oscillation signal and to generate a plurality of divided signals having different division ratios each other, a delay amount determination unit configured to combine an source signal, the oscillation signal, and the plurality of divided signals and to generate... Agent: Sk Hynix Inc.
20140062548 - Wide-range glitch-free asynchronous clock switch: Embodiments include systems and methods for asynchronous, glitch-free clock switching across a wide range of clock frequencies with minimal clock down time. Embodiments effectively provide two stages of synchronization across two independent clock domains. In a first synchronization stage, a received, asynchronous clock select signal is translated into a synchronized... Agent:
20140062549 - Digital pll with dynamic loop gain control: The disclosed embodiments relate to a digital phase-locked loop (PLL) with dynamic gain control. This digital PLL includes a phase detector which receives a reference signal and a feedback signal as inputs and produces an output signal comprising up/down values. It also includes a digital loop filter which receives the... Agent: Rambus Inc.
20140062550 - Phase locked loop: A phase locked loop comprises a loop filter and a charge pump circuit. The loop filter comprises a parallel capacitor, a serial resistor and a serial capacitor. A first terminal of the serial resistor is electrically connected to a first terminal of the parallel capacitor. A first terminal of the... Agent: Realtek Semiconductor Corp.
20140062554 - Delay time control circuit and control method thereof: A delay time control circuit is provided which includes a delay locked loop generating a second clock signal delayed by a predetermined time in response to a first clock signal; a plurality of delay circuits each receiving the first and second clock signals and outputting third and fourth clock signals... Agent: Electronics And Telecommunications Research Institute
20140062552 - Dll circuit and delay-locked method using the same: A delay-locked loop (DLL) circuit having improved phase correction performance includes a variable delay unit configured to generate a DLL clock signal by delaying an input clock signal by a varied delay time in response to a delay control signal at timing corresponding to an update cycle signal, a delay... Agent: Sk Hynix Inc.
20140062551 - Method and systems for high-precision pulse-width modulation: In various embodiments, systems and methods for generating high-precision pulse-width modulation include a delay-locked loop comprising multiple delay units having time-variable delays, control logic for selecting a subset S of the multiple delay units to thereby generate a time-invariant shift amount having a precision finer than that of a system... Agent:
20140062553 - Semiconductor device including delay locked loop circuit and method: A semiconductor device includes a delay locked loop unit configured to compare a phase of an internal clock with a phase of a feedback clock to delay the internal clock by a delay amount corresponding to a comparison result, and to output a delay locked clock, a delay replica modeling... Agent: Sk Hynix Inc.
20140062555 - Propagation simulation buffer: Techniques are disclosed relating to detecting and minimizing timing problems created by clock domain crossing (CDC) in integrated circuits. In various embodiments, one or more timing parameters are associated with a path that crosses between clock domains in an integrated circuit, where the one or more timing parameters specify a... Agent: Advanced Micro Devices, Inc.
20140062556 - Multiphase clock divider: A multiphase clock divider includes: a reference clock generator for generating a plurality of reference clocks; and at least one output clock generator including a first multiplexer for selecting to output a selected reference clock, a second multiplexer for selecting to output a first selected input clock, a third multiplexer... Agent: Novatek Microelectronics Corp.
20140062558 - Current mode controlled power converter: A current mode controlled power converter controllable in a digitally processing current mode even during an on time. In the power converter, each control period based on a reference signal includes a slope calculation period in which a slope compensation signal for the control period is calculated by a slope... Agent: Denso Corporation
20140062557 - Method for reducing output data noise of semiconductor apparatus and semiconductor apparatus implementing the same: Provided is a method for reducing output data noise of a semiconductor apparatus which includes a plurality of output buffers to output data. The method includes the steps of: driving low data to a specific output buffer among the plurality of output buffers, and driving data transiting from a high... Agent: Sk Hynix Inc.
20140062559 - System and method of adjusting a clock signal: A method includes receiving an input clock signal at a programmable buffer. The method further includes filtering an output signal from the programmable buffer to generate a filtered signal having a voltage level, where the voltage level indicates a duty cycle of the output signal. The method further includes comparing... Agent: Qualcomm Incorporated
20140062560 - Reconfigurable flip-flop: A device (300, 1000) provides a dual-edge triggered flip-flop (DETFF) that is reconfigurable to a master-slave flip-flop (MSFF). The device includes a reconfigurable MUX-D flip-flop including two distinct circuit configurations. In a first configuration, two latches or storage elements (340, 360, 1040, 1060) are operating in series to provide a... Agent: Freescale Semiconductor, Inc.
20140062561 - Schmitt receiver systems and methods for high-voltage input signals: Presented systems and methods facilitate efficient switching operations for components operating at different voltage level than a received signal voltage level. In one embodiment, the components of a presented system are operable to perform switching operations for signals with a voltage level swing larger than the power rail of the... Agent: Nvidia Corporation
20140062565 - Clock driver for frequency-scalable systems: A clock driver for a resonant clock network includes a delay circuit that receives and supplies a delayed clock signal. A first transistor is coupled to receive a first pulse control signal and supply an output clock node of the clock driver. An asserted edge of the first control signal... Agent:
20140062562 - Constraining clock skew in a resonant clocked system: An integrated circuit includes a plurality of resonant clock domains of a resonant clock network. Each resonant clock domain has at least one clock driver that supplies a portion of clock signal to an associated resonant clock domain. The resonant clock network operates in a resonant mode with inductors connected... Agent:
20140062563 - Controlling impedance of a switch using high impedance voltage sources to provide more efficient clocking: A clock system of an integrated circuit includes first and second transistors forming a switch that is used when switching the clock system between a resonant mode of operation and a non-resonant mode of operation. An inductor forms a resonant circuit with capacitance of the clock system in resonant mode.... Agent:
20140062564 - Programmable clock driver: A clock driver circuit supplies a clock signal with a drive strength determined according to one or more control signals supplied to the clock driver that vary during run-time. The clock driver is operated with a first drive strength in a non-resonant mode of operation of an associated clock network... Agent:
20140062566 - Transitioning between resonant clocking mode and conventional clocking mode: A resonant clock network includes an inductor coupled to the clock network through a plurality of switches. When the clock network enters resonant mode, the turn-on of the switches to couple the inductor to the clock network is staggered. The clock network may be formed of multiple regions, each with... Agent: Advanced Micro Devices, Inc.
20140062567 - Auto-ranging for time domain extraction of perturbations to sinusoidal oscillation: A method for increasing the accuracy of a time-domain apparatus comprising the following steps: initiating a periodic oscillation with the time-domain apparatus; measuring time intervals between trigger events during each oscillation, wherein the trigger events correspond to the oscillation passing known values; detecting a perturbation to the oscillation by monitoring... Agent:
20140062568 - Output buffer circuit: A differential output buffer includes first and third switches and second and fourth switches which are connected in series respectively between a first voltage source and a current source, and a replica circuit includes a second voltage source which is equivalent to a first voltage source. A current control circuit... Agent: Megachips Corporation
20140062569 - Continuously self-calibrated latched comparator: A comparator apparatus includes an amplifier and one or more latched comparators connected to the amplifier that compares input voltage signals to predefined reference voltage signals. The comparator apparatus includes an offset that limits the minimum input differential voltage signal with respect to the predefined voltage signals. A calibration component... Agent: Lsi Corporation
20140062571 - Inverse level shift circuit: A voltage conversion mask signal generation circuit generates a first main signal and a first mask signal by converting an output signal of the first transistor to a low-side voltage, and generating a second main signal and a second mask signal by converting an output signal of the second transistor... Agent: Mitsubishi Electric Corporation
20140062573 - Level shift device: Disclosed is a level shift device. The level shift device to convert an input signal having a low-voltage level into an output signal having a high-voltage level includes a latch-type level shifter and a voltage generator. The latch-type level shifter includes two upper pull-up P channel transistors and two lower... Agent: Lsis Co., Ltd.
20140062570 - Overdrive circuits and related method: An overdrive circuit includes a pull-up circuit and a pull-down circuit. The pull-down circuit includes first, second and third transistors electrically connected in cascode between an output node and a low voltage supply node. A capacitor is electrically connected from a gate electrode of the third transistor to a gate... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140062572 - Single input level shifter: Provided is a single input level shifter. The single input level shifter includes: an input unit applying a power voltage to a first node in response to an input signal and applying the input signal to a second node in response to a reference signal; a bootstrapping unit applying the... Agent: Konkuk University Industrial Cooperation Corp.
20140062574 - Controlling output power of multiple-input single-output (miso) device: Methods and systems for vector combining power amplification are disclosed herein. In one embodiment, a plurality of signals are individually amplified, then summed to form a desired time-varying complex envelope signal. Phase and/or frequency characteristics of one or more of the signals are controlled to provide the desired phase, frequency,... Agent: Parkervision, Inc.
20140062575 - Rf switch branch having improved linearity: Disclosed is a radio frequency (RF) switch branch having a reduced nonlinearity and an associated method for reducing nonlinearity in a RF switch branch. The RF switch branch includes a primary transistor, a first transistor having power terminals electrically connected between a drain node and a body node of the... Agent: Newport Fab, LLC Dba Jazz Semiconductor
20140062576 - Semiconductor device: The semiconductor device includes first and second output terminals each coupled to one end side and another end side of an inductive or capacitive load, a first MOS transistor coupled between a first voltage and the first output terminal, a second MOS transistor coupled between a second voltage and the... Agent: Renesas Electronics Corporation
20140062577 - Rf switch with adaptive drain and source voltage: A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port... Agent: Richwave Technology Corp.
20140062578 - Semiconductor structure having an active device and method for manufacturing and manipulating the same: A semiconductor structure comprising a substrate, an active device, a field oxide layer and a poly-silicon resistor is disclosed. The active device is formed in a surface area of the substrate. The active device has a first doped area, a second doped area and a third doped area. The second... Agent: Macronix International Co., Ltd.
20140062579 - Apparatus for fluid control device monitoring: Apparatus for fluid control device monitoring are disclosed. An example apparatus includes a body through which a shaft extends. The shaft is to be coupled to an actuator. An angular position of the shaft is based on a position of the actuator. The apparatus includes a target coupled to the... Agent:
20140062580 - Diode formed of pmosfet and schottky diodes: A P-type Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) includes a gate, a first source/drain region connected to the gate, and a second source/drain region on an opposite side of the gate than the first source/drain region. A first Schottky diode includes a first anode connected to the first source/drain region, and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140062581 - Radiation hardened charge pump: This invention relates to radiation hardened charge pumps for electronic circuitry.... Agent: Microelectronics Research And Development Corporation
20140062583 - Integrated circuit and method of operating the same: An integrated circuit includes a first internal voltage generation unit configured to generate a first voltage and output the first voltage through an internal voltage terminal in an active operation period, a second internal voltage generation unit configured to generate a second voltage and output the second voltage through the... Agent: Sk Hynix Inc.
20140062582 - Sensor current interface transceiver with adaptive linearization: Some embodiments of the present disclosure relate to a sensor interface module having a linearization module that increase a size of a linear region of a current output from a high-side current source. The disclosed sensor interface module has a reference voltage source configured to generate a reference signal. An... Agent: Infineon Technologies Ag
20140062585 - Circuit arrangement with a first semiconductor device and with a plurality of second semiconductor devices: A circuit arrangement includes a first semiconductor device having a load path and a number of second semiconductor devices. Each second semiconductor device has a control terminal and a load path between a first load terminal and a second load terminal. The second semiconductor devices have their load paths connected... Agent: Infineon Technologies Dresden Gmbh
20140062584 - Semiconductor integrated circuit: A semiconductor integrated circuit includes a first internal voltage generator including a PMOS and a first comparator, and a second internal voltage generator including an NMOS, a second comparator, and a voltage pump generator configured to provide a pumping power voltage to the second comparator. A power control circuit switchably... Agent: Winbond Electronics Corp.
20140062586 - Double through silicon via structure: This invention discloses a double Through Silicon Via (TSV) structure, including a first die unit, a first signal path, a second signal path, a receiving unit and a second die unit. The first and the second signal paths respectively include a driving unit and a TSV unit. Each driving unit... Agent: National Tsing Hua University
20140062587 - Semiconductor device having stacked chips: According to one embodiment, a semiconductor device includes chips and a first selection circuit. Each of the chips has at least first and second vias for transmitting at least first and second address signals, these chips are stacked to be electrically connected via the first and second vias. The first... Agent:02/27/2014 > 30 patent applications in 20 patent subcategories.
20140055165 - Glitch filter circuit and method: A glitch filter circuit has a filter/delay part that always operates on rising or falling pulses for both rising edges and falling edges of the input signal. In this way, the filter delay can be made symmetrical and the circuit will have no duty cycle distortion. The rise and fall... Agent: Nxp B.v.
20140055166 - Reference voltage circuits: A reference voltage circuit corrects for bandgap voltage shifts induced during fabrication. The reference voltage circuit generates a reference voltage using first and second base-emitter pairs. The reference voltage circuit sums the voltage across the first base-emitter pair with a difference voltage. During a first time period, the difference voltage... Agent: Atmel Corporation
20140055167 - Earphone connection interface and method of operating earphone, and terminal for supporting the same: An earphone connection interface is provided. The earphone connection interface includes a first detector disposed at a first area to detect an electrical change according to a contact state of the first area, and a second detector disposed at a second area different from the first area to detect an... Agent: Samsung Electronics Co. Ltd.
20140055169 - Load driving device: A load driving device includes a pulse driving circuit which has a capacitor between an output terminal and a ground potential, a level detection circuit which detects whether an output terminal voltage on the output terminal of the pulse driving circuit is at high level or at low level, a... Agent: Ngk Spark Plug Co., Ltd.
20140055168 - Source-electrode driving control circuit and control method thereof: Disclosed are driving control methods and circuits for quasi-resonant control of a main power switch of a switching power supply. In one embodiment, a driving control circuit can include: (i) a clamp circuit coupled to a gate of the main power switch, where the clamp circuit is configured to clamp... Agent: Silergy Semiconductor Technology (hangzhou) Ltd
20140055171 - Driver circuit: A driver circuit has a detector circuit including a high side detection transistor, a resistor, and a low side detection transistor connected to a high side output transistor and a low side output transistor. A clamping circuit converts a high voltage amplitude change signal generated at a connection point of... Agent: Fuji Electric Co., Ltd.
20140055175 - High-voltage driver integratable with an integrated circuit: A high-voltage driver integratable with an integrated circuit has a switching transistor, a switching diode, a first resistor, a second resistor, and a control transistor. The anode of the switching diode is connected to the source of the switching transistor. The cathode of the switching diode is connected to the... Agent: Luxul Technology Incorporation
20140055174 - Low current start up including power switch: The present document relates to a start-up circuit comprising a power switch wherein a circuit charges a supply voltage capacitor. The capacitor provides a supply voltage to a power switch; the power switch forms a switched power converter with a power converter network. The circuit comprises a source and gate... Agent:
20140055170 - Method, system, and apparatus for efficiently driving a transistor with a booster in voltage supply: A method, system, and apparatus for driving a Silicon Carbide (SiC) Junction Field Effect Transistor (JFET) are provided. A boosting capacitor is used in combination with two drivers to efficiently provide a boosting current to the SiC JFET and then a holding current to the SiC JFET. The boosting capacitor,... Agent: Avago Technologies GeneralIP(singapore) Pte. Ltd.
20140055173 - Power module: A power module includes an IGBT; a MOSFET connected in parallel with the IGBT; a lead frame having a first frame portion on which the IGBT is mounted and a second frame portion on which the MOSFET is mounted, and having a step by which the first frame portion is... Agent: Mitsubishi Electric Corporation
20140055172 - Switch driving circuit: A switch driving circuit for driving a full-controlled power switch is disclosed, including a pulse-width modulation unit, a pulse transformer, an anti-interference module, a pulse-width demodulation unit and a driving-power amplifier. The pulse-width modulation unit converts a driving input signal into a positive-negative narrow pulse-width signal. The anti-interference module is... Agent: Delta Electronics, Inc.
20140055176 - Low noise accelerated continuous-time ramp generator: A ramp generator circuit, e.g. foreign analog-to-digital converter. The ramp generator circuit has first and second current sources that are maintained in the on condition whether they are being used or not. A switched capacitor connects to the current source in order to create a multi-slope ramp.... Agent: Forza Silicon Corporation
20140055177 - Reset circuit for gate driver on array, array substrate, and display: A reset circuit for Gate Driver on Array, an array substrate and a display is used for increasing reliability and long-term stability of a GOA circuit and thus improving performance of the GOA circuit. The GOA reset circuit includes a first electronic switch circuit (301) connected to an input terminal... Agent: Beijing Boe Optoelectronics Technology Co., Ltd.
20140055178 - Adaptive phase-shifted synchronization clock generation circuit and method for generating phase-shifted synchronization clock: The present invention discloses an adaptive phase-shifted synchronization clock generation circuit and a method for generating phase-shifted synchronization clock. The adaptive phase-shifted synchronization clock generation circuit includes: a current source generating a current which flows through a node to generate a node voltage on the node; a reverse-proportional voltage generator... Agent: Richtek Technology Corporation, R.o.c.
20140055181 - Clock generating circuit: A clock generating circuit includes: a counter that counts a number of pulses of an oscillation clock signal existed within one cycle of a reference clock signal; a first time-to-digital converter that generates a plurality of phases of first clock signals by delaying the oscillation clock signal; a second time-to-digital... Agent: Fujitsu Limited
20140055180 - Distributed resonate clock driver: A clock driver includes a clock interconnect running to multiple lanes of an integrated circuit chip, the interconnect including a positive clock line and a negative clock line. A clock generator generates a clock signal and a source inductor, through which the clock generator draws DC power, helps drive the... Agent: Broadcom Corporation
20140055179 - Interpolative divider linearity enhancement techniques: A flexible clock synthesizer technique includes generating a phase interpolator calibration signal to adjust a phase interpolator output signal generated by a phase interpolator of an interpolative divider. The phase interpolator is responsive to a phase interpolator control code and an output signal of a fractional-N divider of the interpolative... Agent:
20140055182 - Power control system and method: A system and method for controlling an electrical device is provided. The method comprises receiving three phase power from a source, decomposing signals representative of power in each phase of the three phase power to provide a positive-sequence component of each phase and tracking the positive-sequence component of each phase... Agent: Rockwell Automation Technologies, Inc.
20140055183 - Domain crossing circuit of semiconductor apparatus: A domain crossing circuit of a semiconductor apparatus includes a delay-locked loop block configured to generate a delay-locked loop clock signal in response to a clock signal and a clock enable signal; a clock enable block configured to generate the clock enable signal in response to the clock signal and... Agent: Sk Hynix Inc.
20140055184 - Apparatuses, integrated circuits, and methods for synchronizing data signals with a command signal: Apparatuses, integrated circuits, and methods are disclosed for synchronizing data signals with a command signal. In one such example apparatus, an input control circuit is configured to provide an input clock signal responsive to a data clock signal. A delay circuit is configured to delay the data clock signal corresponding... Agent: Micron Technology, Inc
20140055185 - Integrated circuit having latch circuits and using delay circuits to fetch data bits in synchronization with clock signals: A semiconductor integrated circuit includes a delay circuit connected between a source of data bits and a data input terminal of a latch circuit. The delay circuit includes a first delay section formed by connecting logic devices in series corresponding to a number of logic devices included in a clock... Agent: Lapis Semiconductor Co., Ltd.
20140055186 - Asymmetric propagation delays in level shifters and related circuits: Aspects of the present disclosure are directed towards apparatus useful for processing communications between different signaling voltage levels. Different signaling voltage levels are accomplished by creating true and complement signals from at least one input signal, each of which are subject to different delays, and level shifting the true and... Agent: Nxp B.v.
20140055187 - Clock integrated circuit: The clock circuit of an integrated circuit operates with variations such as temperature, ground noise, and power noise. Various aspects of an improved clock integrated circuit address one or more of the variations in temperature, ground noise, and power noise.... Agent: Macronix International Co., Ltd.
20140055188 - Transmission channel for ultrasound applications: A transmission channel configured to transmit high-voltage pulses and to receive echos of the high-voltage pulses includes a high voltage buffer, a voltage clamp and a switch. The voltage clamp may include clamping transistors and switching off transistors coupled together in series with body diodes in anti-series. The transmission channel... Agent: Stmicroelectronics S.r.l.
20140055189 - Mixer circuit, semiconductor device, receiving circuit, receiving device, and communication device: According to an embodiment, a mixer circuit includes first transistors each having a charge storage layer, a second transistor, a group of first nodes, and an output node. The first transistors as a pair receive a differential signal having a first frequency. The second transistor receives a signal having a... Agent:
20140055190 - Gate drive circuit: A gate drive circuit for driving an IGBT serving as a power semiconductor device includes a constant-current gate drive circuit that charges a gate capacity of the IGBT at a constant current, and a constant-voltage gate drive circuit that is connected in parallel to the constant-current gate drive circuit between... Agent: Mitsubishi Electric Corporation
20140055191 - Low power rf switch: Disclosed is a low power RF switch, and more particularly, disclosed is a low power RF switch which does not use a negative voltage when being driven. The low power RF switch includes: a switch unit which including a transistor which receives a high (H) control signal or a low... Agent: Hideep Inc
20140055192 - Saturation current limiting circuit topology for power transistors: A circuit topology for limiting saturation current in power transistors is disclosed. The circuit topology includes a normally-on transistor and a normally-off transistor coupled in series. A limiter circuit is coupled between a gate of the normally-on transistor and a source of the normally-off transistor for limiting the steady-state maximum... Agent:
20140055193 - Switch system and method for vehicle: The present invention relates to a switch system for a vehicle. The switch system, facilitates a desired switch to be accurately and conveniently manipulated in a state where a driver views information of the switch displayed through an display device while remaining focused during the vehicle operation. The switch system... Agent: Hyundaii Motor Company
20140055194 - Low noise charge pump method and apparatus: A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control... Agent: Peregrine Semiconductor Corporation02/20/2014 > 27 patent applications in 19 patent subcategories.
20140049290 - Integrated circuit: There is disclosed an integrated circuit comprising a management unit for managing the occurrence of predetermined events in the integrated circuit. The management unit comprises: a processing unit adapted to determine the occurrence of a predetermined event in the integrated circuit; a data storage unit adapted to store information regarding... Agent: Nxp B.v.
20140049291 - Noise-resistant sampling circuit and image sensor: An approach for a sampling circuit to reduce noise in signals (e.g., as received from photo diodes or the like) is provided. In one embodiment of the present invention, there is a sampling circuit comprising: an amplifier, which amplifies charge signals generated at photo diodes and converts them to voltage... Agent: Luxen Technologies, Inc.
20140049292 - Integrated circuit package having medium-independent signaling interface coupled to connector assembly: An integrated circuit (IC) package includes electrical contacts disposed at a first surface of the IC package, an integrated circuit implementing an electrical signaling interface, and a connector assembly accessible at a second surface of the IC package. The connector assembly is to mechanically attach to another connector assembly and... Agent: Advanced Micro Devices, Inc.
20140049294 - Input buffer: According to one embodiment, an input buffer includes a comparator that compares an input signal with a reference voltage, an inverter that inverts an output signal of the comparator, and a drive adjusting circuit that adjusts a current driving force of the inverter.... Agent: Kabushiki Kaisha Toshiba
20140049293 - Three-dimensional high voltage gate driver integrated circuit: A three-dimensional (3D) gate driver integrated circuit includes a high-side integrated circuit stacked on a low-side integrated circuit where the high-side integrated circuit and the low-side integrated circuit are interconnected using through-silicon vias (TSV). As thus formed, the high-side integrated circuit and the low-side integrated circuit can be formed without... Agent: Alpha & Omega Semiconductor, Inc.
20140049296 - Electronic device including transistor and method of operating the same: An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply... Agent: Samsung Electronics Co., Ltd.
20140049297 - Gate drive circuit: A gate drive circuit includes: an input port for receiving a control signal; an output port; a capacitor connected to the output port; a modulation unit which generates (i) a first modulated signal indicating timing of a first logical value of the control signal and (ii) a second modulated signal... Agent: Panasonic Corporation
20140049295 - Switch-driving circuit: A switch-driving circuit suitable for driving a full-controlled power switch combination is disclosed. The switch-driving circuit includes a first pulse-width modulator, a high-voltage isolation pulse transformer module and a plurality of output modules. The high-voltage isolation pulse transformer module includes a magnetic core connected to multiple output modules in a... Agent: Delta Electronics, Inc.
20140049298 - Frequency generation apparatus and frequency generation method: There are provided a frequency generation apparatus and a frequency generation method. The frequency generation apparatus includes a current generation unit varying an amount of current with respect to a temperature change; a capacitor in which charges are charged by the current generation unit; a discharge circuit unit comparing a... Agent: Samsung Electro-mechanics Co., Ltd.
20140049299 - Programmable ultrasound transmit beamformer integrated circuit and method: An electrical waveform generating circuit has a programmable current source-driver. A digital switched current source is coupled to the programmable current source-driver and controlled by waveforms stored in the programmable current source-driver. A plurality of MOSFETs is coupled to the programmable current source driver. A first coupled inductor is connected... Agent:
20140049300 - Power-on reset circuit: A power on reset circuit is capable of changing logic level of reset signal at different threshold voltages.... Agent: Raydium Semiconductor Corporation
20140049301 - Semiconductor switch with reliable blackout behavior and low control power: The present invention relates to a bidirectional semiconductor switch (M1, M2) with extremely low control power consumption and a bootstrap circuit which allows reliable start of operation of the switch and the hosting device after unlimited duration of mains interruptions. Intelligent control options are provided by operating from a small... Agent: Koninklijke Philips N.v.
20140049304 - Double output linearized low-noise charge pump with loop filter area reduction: According to embodiments, dual path loop filter circuits are described which have, for example, a single charge pump. The current flow in the DPLF circuit is architected to source, during an injection time period, a first current to the loop filter, sink, also during the injection time period, a second... Agent: St-ericsson Sa
20140049303 - Frequency generating system, voltage-controlled oscillator module and method for adjusting signal frequency: A voltage controlled oscillator module including a VCO unit and a gain adjustment unit is provided. The VCO unit is configured to generate a frequency signal based on a control voltage. The gain adjustment unit is coupled to the VCO unit and configured to receive a first adjustment voltage, a... Agent: Phison Electronics Corp.
20140049302 - Phase-locked loop and method for clock delay adjustment: In a phase frequency detector, a control signal is generated in accordance with a phase difference and a frequency difference between the output clock signal and a feedback signal generated by a voltage controlled oscillator coupled to the phase frequency detector. The control signal is then fed through a charge... Agent: Nanya Technology Corporation
20140049305 - Fast measurement initialization for memory: Systems and methods for synchronization of clock signals are disclosed. In a feedback system such as a delay-lock loop circuit, delays to be applied can be determined adaptively based on a phase difference between a reference signal and a clock signal being delayed. Such adaptive decisions can be made during... Agent: Micron Technology, Inc.
20140049306 - Signal transmission circuits: A signal transmission circuit includes a pre-driver and a driver. The pre-driver is configured to generate a first drive signal in response to a first delay signal and a first selection signal and to generate a second drive signal in response to a second delay signal, a second selection signal,... Agent: Sk Hynix Inc.
20140049307 - Circuits and methods for sharing bias current: The present disclosure includes systems and methods for sharing bias current. In one embodiment, shared bias current passes through a first level device to one or more second level devices along a bias current path. Multiple active devices may share bias current along a bias current path and process signal... Agent:
20140049308 - Level shift circuit: According to one embodiment, a first CMOS inverter receives an input signal corresponding to a first power supply voltage, and is driven by a second power supply voltage which is smaller than the first power supply voltage; a second CMOS inverter is connected to a rear stage of the first... Agent: Kabushiki Kaisha Toshiba
20140049309 - Up-conversion mixer having a reduced third order harmonic: An up-conversion mixer includes a mixer cell having at least one output node configured to generate an output. The up-conversion mixer further includes a first cascaded transconductance input stage coupled to the mixer cell, the first cascaded transconductance input stage configured to receive an input signal and to reduce a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140049310 - Semiconductor device, semiconductor system, and monitoring method thereof: A semiconductor device includes a plurality of oscillation signal generation units configured to output a plurality of oscillation signals whose cycles are adjusted according to a PN ratio, which is a size ratio of a PMOS transistor to an NMOS transistor, and a selection unit configured to selectively output the... Agent: Sk Hynix Inc.
20140049312 - Rf switch with complementary switching devices: A radio frequency (RF) switch including a common port, a first port, a second port, a first RF pathway extending between the common port and the first port, a second RF pathway extending between the common port and the second port, a first shunt path extending between the first RF... Agent: Richwave Technology Corp.
20140049311 - Switching device with non-negative biasing: Embodiments provide a switching device including one or more field-effect transistors (FETs) and bias circuitry. The one or more FETs may transition between an off state and an on state to facilitate switching of a transmission signal. The one or more FETs may include a drain terminal, a source terminal,... Agent: Triquint Semiconductor, Inc.
20140049313 - Latch-up robust pnp-triggered scr-based devices: An approach for providing a latch-up robust PNP-triggered SCR-based device is disclosed. Embodiments include providing a silicon control rectifier (SCR) region; providing a PNP region having a first n-well region proximate the SCR region, a first N+ region and a first P+ region in the first n-well region, and a... Agent: Globalfoundries Singapore Pte. Ltd.
20140049314 - Mos resistor apparatus and methods: Apparatus and methods disclosed herein implement a MOS resistor using the current channel of a MOS transistor. The MOS resistance R(DS) is dependent upon MOS transistor geometry and nominal gate voltage. MOS resistor terminal-to-gate voltages are averaged and applied to the MOS transistor gate such as to maintain the MOS... Agent: Texas Instruments Incorporated
20140049315 - Inversion mode varactor: In one exemplary embodiment of the invention, a method includes: providing an inversion mode varactor having a substrate, a backgate layer overlying the substrate, an insulating layer overlying the backgate layer, a semiconductor layer overlying the insulating layer and at least one metal-oxide semiconductor field effect transistor (MOSFET) device disposed... Agent: International Business Machines Corporation
20140049316 - Semiconductor integrated circuit and control method for the same: A semiconductor integrated circuit includes a user circuit and a power supply noise suppression circuit. The user circuit includes a plurality of circuit modules each containing an operation ratio control circuit. The power supply noise suppression circuit judges an amount of current fluctuation occurring in the user circuit by monitoring... Agent: Fujitsu Limited02/13/2014 > 34 patent applications in 29 patent subcategories.
20140043064 - Detection of bad clock conditions: There is provided a circuit and method for detecting a bad clock condition on a clock signal that includes sampling the value of the clock signal at a first plurality of time delays following a rising edge on the clock signal. This method also includes sampling the value of the... Agent: Stmicroelectronics (research & Development) Limited
20140043065 - Driver circuit, driver architecture and driving method thereof: A driver architecture includes multiple drivers connected in series. An (i)th driver includes a reading circuit, a configuration circuit, a clock generator and a data input/output start pulse (DIO) generation circuit. The reading circuit reads an (i)th DIO outputted from an (i−1)th driver according to multiple reading pulses. The (i)th... Agent: Novatek Microelectronics Corp.
20140043066 - Gate driving circuit and display apparatus having the same: A gate driving circuit includes a pull-up control part, a pull-up part, a carry part, a first pull-down part and a second pull-down part. The pull-up control part applies a carry signal from a previous stage to a first node. The pull-up part outputs an N-th gate output signal based... Agent: Samsung Display Co., Ltd.
20140043068 - Method for driving semiconductor device: To provide a driving method of a semiconductor device for reducing power consumption. In a method for driving a semiconductor device of one embodiment of the present invention, in a first period, a switch configured to control an electrical connection between a first wiring and a second wiring together with... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140043069 - Power saving driver design: In an asymmetrically terminated communication system, the power consumed to transmit a particular bit value is adjusted based on whether the bit being output is the second, third, fourth, etc. consecutive bit with the same value after a transition to output the particular bit value. The adjustment of the power... Agent: Rambus Inc.
20140043067 - Semiconductor structure and manufacturing method and operating method of the same: A semiconductor structure and a manufacturing method and an operating method of the same are provided. The semiconductor structure includes a substrate, a main body structure, a first dielectric layer, a first conductive strip, a second conductive strip, a second dielectric layer, and a conductive structure. The main body structure... Agent: Macronix International Co., Ltd.
20140043070 - Class resonant-h electrosurgical generators: A generator for use with an electrosurgical device is provided. The generator has a gain stage electrically disposed between a first voltage rail and a second voltage rail, wherein the gain stage includes an input and an output. A voltage source operably coupled to the gain stage input and configured... Agent: Covidien Lp
20140043071 - Self-initializing on-chip data processing apparatus and method of self-initializing an on-chip data processing apparatus: An on-chip data processing apparatus has an operating supply voltage selected from a range of supply voltages and has voltage level detection circuitry configured to determine the level of the operating supply voltage. The voltage level detection circuitry comprises adaptive circuitry responsive to a variation in the reference voltage. Phase... Agent: Arm Limited
20140043072 - Semiconductor device and power control method therefor: A semiconductor device comprises a plurality of circuit blocks, a plurality of local wirings which supply power to the plurality of circuit blocks, respectively, a global wiring which supplies the power to the plurality of local wirings, a plurality of first switches which are disposed between the plurality of local... Agent:
20140043073 - Clock synchronization circuit and semiconductor device: A clock synchronization circuit is configured to capture an input data bit according to an input clock signal, and to synchronize and output the input data bit. The clock synchronization circuit includes a clock buffer for generating an internal clock signal according to the input clock signal and transmitting the... Agent: Lapis Semiconductor Co., Ltd.
20140043074 - Frequency tuning based on characterization of an oscillator: Aspects of a method and system for frequency tuning based on characterization of an oscillator are provided. In this regard, a frequency of an oscillator in an integrated circuit may be controlled based on a first digital control word, a frequency of a tuned circuit may be controlled based on... Agent: Broadcom Corporation
20140043075 - Semiconductor device and electronic device: A semiconductor device includes a clock input circuit that receives an external clock signal, a PLL circuit for input timing control that performs phase adjustment between the external clock signal and a delayed clock signal to generate an internal clock signal used to acquire input data, and a delay circuit... Agent: Renesas Mobile Corporation
20140043077 - Method and system for controlling hs-nmos power switches with slew-rate limitation: A method and system for limiting the slew rate of the output voltage of one or more high side (HS) NMOS power switches is disclosed. A circuit arrangement configured to control a first NMOS switch is described. The arrangement comprises voltage provisioning means configured to supply a gate voltage to... Agent: Dialog Seminconductor Gmbh
20140043076 - Pulsed gate driver: A gate driver includes a control input receiving a control signal, an output to provide an amplified output signal to the gate, and controller. The controller produces an adaptive pulse train varying with the control signal. An adaptive incrementer produces a sequence of numbers that set a slew rate of... Agent: Fairchild Semiconductor Corporation
20140043078 - Optimized flip-flop device with standard and high threshold voltage mos devices: A flip-flop operating with standard threshold voltage MOS devices as compared with high threshold voltage MOS devices may have improved speed performance, but greater leakage current. Likewise, a flip-flop operating with high threshold voltage MOS devices may reduce the leakage current and have better power efficiency, but decreased speed and... Agent: Sandisk Technologies Inc.
20140043079 - Interchannel skew adjustment circuit: An interchannel skew adjustment circuit adjusts signal skew between a first channel and a second channel. The circuit includes a phase adjustment circuit configured to receive a signal of the first channel, delay the signal by a discretely variable delay amount, and output a delayed signal; a channel coupling circuit... Agent: Panasonic Corporation
20140043080 - Methods and systems for controlling a power converter: A line angle shift logic controller for use with a power generation system coupled to an electrical grid is disclosed. The line angle shift controller includes a line angle shift controller configured to receive a phase locked loop (PLL) error signal representative of a difference between a phase angle of... Agent:
20140043081 - Sample-and-hold circuit for generating a variable sample delay time of a transformer and method thereof: A sample-and-hold circuit for generating a variable sample delay time of a transformer includes a discharge detection unit, a sample delay time generation unit, and a comparator. The discharge detection unit generates a first voltage according to a first turning-on signal and a first reference current. Length of the first... Agent: Leadtrend Technology Corp.
20140043082 - Clock generation method and system: The clock generation method contains the following steps. In a pulse recognition step, an input pulse signal is first filtered to remove a shorter signal. Then, a width digitization calculation is conducted on the remaining pulse signal. Based on the width digitization calculation, a signal is recorded and a period... Agent: M31 Technology Corporation
20140043083 - Pulse generator: A pulse generator 100 allows a high-frequency oscillator 101 to output a high frequency signal and allows an amplifier 102 to amplify and output the signal. The amplifier 102 amplifies the high frequency signal from the high-frequency oscillator 101 and outputs the signal only for a period of time when... Agent: Furukawa Electric Co., Ltd.
20140043084 - Signal electric potential conversion circuit: In a signal electric potential conversion circuit, a capacitor has one end receiving an input signal CIN, and the other end connected to a termination node N1. A conversion circuit receives a potential IN of the termination node N1. A connection element is provided between a power supply VDDH and... Agent: Panasonic Corporation
20140043085 - Feedback control circuit for a hall effect device: A feedback control circuit comprises an adjustable element, a main signal path and a feedback control loop. The adjustable element is configured to offset a signal in accordance with an offset control signal and output an offset signal. The main signal path comprises a first comparator to process the offset... Agent: Infineon Technologies Ag
20140043086 - Mixer: A frequency converter, capable of obtaining resonance characteristics having a high Q factor and a high multiplication signal and having a narrow-band frequency selectivity function, is provided by the following configuration. A magnetoresistance effect element includes a pinned magnetization layer, a free magnetization layer, and a non-magnetic spacer layer disposed... Agent: Tdk Corporation
20140043087 - High accuracy bipolar current multiplier with base current compensation: A bipolar current multiplier apparatus and method includes a group of negative feedback loop circuits for compensating base current loss, and multiple bipolar devices that communicate electronically with the negative feedback loop circuits, wherein the bipolar devices are responsive to base currents capable of being self-cancelled due to a presence... Agent: Lsi Corporation
20140043088 - Semiconductor device and receiver: According to one embodiment, there is provided a semiconductor device including a first amplifier and a second amplifier. The first amplifier has an input terminal to receive a first signal and an output terminal to output a second signal. The second amplifier is configured to receive the first signal and... Agent:
20140043089 - Digitally controlled high speed high voltage gate driver circuit: The present invention relates to semiconductor technology. In particular, the present invention relates to high-speed, high voltage switching for a high voltage generator for an X-ray system. Switching elements, e.g. IGBTs or MOS-FETs, are employed for high-speed high voltage switching. However, circuit elements or parasitic elements at an input of... Agent: Koninklijke Philips N.v.
20140043090 - Output buffer and signal processing method: An output buffer comprises a series connection of a first field effect transistor and a second field effect transistor, wherein the first field effect transistor is connected to a first supply potential terminal and the second field effect transistor is connected to a second supply potential terminal. An output terminal... Agent: Ams Ag
20140043091 - Voltage output circuit and apparatus for selectively outputting negative voltage using the same: An apparatus selectively outputs one negative voltage from among a plurality of negative voltages. The apparatus includes a first switching unit configured to perform a switching operation and output a first voltage-on signal and a first voltage-off signal according to a selection signal and a first negative voltage signal, and... Agent:
20140043092 - Input switches in sampling circuits: A switch may include a MOS transistor alternatively operating in an ON phase and an OFF phase, a first voltage level shifter, and a second voltage level shifter. The MOS transistor may include a source for receiving an input signal, a drain for connecting to a load, and a gate.... Agent: Analog Devices, Inc.
20140043093 - Semiconductor device and method for driving semiconductor device: Direct-path current is reduced in a semiconductor device including CMOS circuits. One embodiment of the present invention is a method for driving a semiconductor device that includes a first CMOS circuit between power supply lines, a first transistor between the power supply lines, a second CMOS circuit between the power... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140043094 - Semiconductor device and method for driving semiconductor device: A semiconductor device includes a first transistor having a p-channel type, a second transistor having an n-channel type, and a third transistor with low off-state current between a high potential power supply line and a low potential power supply line, and a source terminal and a drain terminal of the... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140043095 - Voltage-stabilizing circuit: A voltage-stabilizing circuit for stabilizing an output voltage of a power integrated circuit (IC) includes an electronic switch and an RC circuit. The RC circuit includes a resistor and a capacitor. A first terminal of the resistor receives an enable signal and is connected to a control terminal of the... Agent: Hong Fu Jin Precision Industry (shenzhen) Co., Ltd.
20140043096 - Polysilicon diode bandgap reference: Representative implementations of devices and techniques provide a bandgap reference voltage using at least one polysilicon diode and no silicon diodes. The polysilicon diode is comprised of three portions, a lightly doped portion flanked by a more heavily doped portion on each end.... Agent:
20140043097 - Electronic device and noise reducing method: An electronic device includes a first electronic component and a second electronic component that is connected to the first electronic component via a signal line in which a signal is transmitted and received. An electronic device includes a plurality of conductive lines that is arranged in parallel with the signal... Agent:Previous industry: Electronic digital logic circuitry
Next industry: Demodulators
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