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Miscellaneous active electrical nonlinear devices, circuits, and systems February patent applications/inventions, industry category 02/13

20130049809 - Micro electro-mechanical system circuit capable of compensating capacitance variation and method thereof: A micro electro-mechanical system (MEMS) circuit includes a MEMS differential capacitor, a read-out circuit, a control circuit, and a compensation circuit. The MEMS differential capacitor includes a first capacitor and a second capacitor. The read-out circuit is coupled to the MEMS differential capacitor for reading a difference between the first... Agent:

20130049810 - Methods and apparatus for time to current conversion: A time to current conversion apparatus and methods. An impedance having an input for selectively receiving a time varying periodic signal or a known voltage signal is provided; and a current output is coupled to the impedance. By observing the average current through the impedance for the known voltage signal... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130049811 - High efficiency driving circuit: A high efficiency driving circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, a first N-type metal-oxide-semiconductor transistor, a second N-type metal-oxide-semiconductor transistor, a current source, a third N-type metal-oxide-semiconductor transistor, a fourth N-type metal-oxide-semiconductor transistor, a fifth N-type metal-oxide-semiconductor transistor, a first resistor, and a second... Agent:

20130049813 - High-side switch circuit: The high-side switch circuit includes a first output MOS transistor that is connected, at a first end thereof, to a power supply terminal. The high-side switch circuit includes a second output MOS transistor that is connected to a second end of the first output MOS transistor at a first end... Agent: Kabushiki Kaisha Toshiba

20130049812 - Monolithic high-side switch control circuits: A high-side switch control circuit is provided. The high-side switch control circuit includes an on/off transistor, a bias resistor, a zener diode, a level-shifting transistor, and a current source. The on/off transistor operates as a switch. The bias resistor is coupled to turn off the on/off transistor. The zener diode... Agent: System General Corporation

20130049814 - Parallel connection methods for high performance transistors: Parallel transistor circuits with reduced effects from common source induction. The parallel transistors include physical gate connections that are located electrically close to one another. The parallel circuits are arranged such that the voltage at the common gate connection resulting from transient currents across common source inductance is substantially balanced.... Agent:

20130049818 - 20v to 250v high current asic pin diode driver: An integrated circuit including a first circuit, a second circuit, a third circuit, a first complementary pair of transistors, and a second complementary pair of transistors. The first circuit may be configured to generate a first input signal in response to a first control input signal. The second circuit may... Agent:

20130049815 - Method for transmitting a binary signal via a transformer: A method for the repetitive transmission of a signal representing a binary value via a transformer section of a driver of a power semiconductor. Transmitting for the first value a first pulse packet as a sequence of a positive pulse and a negative pulse or for the second value a... Agent: Semikron Elektronik Gmbh & Co. Kg

20130049817 - Methods, integrated circuits, apparatuses and buffers with adjustable drive strength: Buffers, integrated circuits, apparatuses, and methods for adjusting drive strength of a buffer are disclosed. In an example apparatus, the buffer includes a driver. The driver includes a pull-up circuit coupled to a supply voltage node and an output node, and also includes a pull-down circuit coupled to a reference... Agent: Micron Technology, Inc.

20130049816 - Power saving resonant gate driver and related method: According to one embodiment, a resonant gate driver comprises a resonant path configured to couple a gate of a power transistor to a supply capacitor, and a low impedance path configured to couple the gate of the power transistor to a voltage rail. The resonant gate driver selectively utilizes the... Agent: International Rectifier Corporation

20130049819 - Method and control unit for controlling an electrical component: An electrical component having a primary winding, a first field-effect transistor, configured as a switch of the primary winding, for switching the primary winding, a quench winding for quenching the inductive load of the primary winding when switching off the primary winding, and a second field-effect transistor, configured as a... Agent:

20130049820 - Clock divider unit: A clock divider unit includes a plurality of divider circuits which divides a common reference clock, and a gate circuit disposed before the plurality of divider circuits. The reference clock is supplied to the divider circuits via the gate circuit after a reset state of each divider circuit is released... Agent: Sanyo Electric Co., Ltd.

20130049821 - Fractional frequency divider: An oscillator may output phased signals to a phase interpolator which is to generate an adjustable output clock signal having a phase offset relative to at least one of the phased signals received from the oscillator. A divider may then divide the frequency of the output signal generated by the... Agent:

20130049822 - Integrated circuit: There is provided an integrated circuit in which a reference-signal source generates a reference signal having a basic frequency, a phase locked loop includes a voltage-controlled oscillator, a first frequency divider to generate a first frequency-divided signal based on the signal by N, a phase detector, a charge pump and... Agent: Kabushiki Kaisha Toshiba

20130049823 - Semiconductor device: A semiconductor device includes a variable resistor that sets a resistance value as a first resistance value in an emphasis mode, and as a second resistance value smaller than the first resistance value in a de-emphasis mode, a first driver that sets an output impedance as a third resistance value... Agent: Renesas Electronics Corporation

20130049824 - 3d chip stack skew reduction with resonant clock and inductive coupling: There is provided a clock distribution network for synchronizing global clock signals within a 3D chip stack having two or more strata. The clock distribution network includes a plurality of clock distribution circuits, each being arranged on a respective one of the two or more strata for providing the global... Agent: International Business Machines Corporation

20130049826 - 3d chip stack skew reduction with resonant clock and inductive coupling: There is provided a clock distribution network for synchronizing global clock signals within a 3D chip stack having two or more strata. The clock distribution network includes a plurality of clock distribution circuits, each being arranged on a respective one of the two or more strata for providing the global... Agent: International Business Machines Corporation

20130049825 - 3d integrated circuit stack-wide synchronization circuit: There is provided a synchronization circuit for a 3D chip stack having multiple circuits and multiple strata interconnected using a first and a second stack-wide broadcast connection chain. The synchronization circuit includes the following, on each stratum. A synchronizer connected to the first connection chain receives an asynchronous signal therefrom... Agent: International Business Machines Corporation

20130049827 - Synchronizing global clocks in 3d stacks of integrated circuits by shorting the clock network: There is provided a clock distribution network for synchronizing global clock signals within a 3D chip stack having two or more strata. On each of the two or more strata, the clock distribution network includes a clock grid having a plurality of sectors for providing the global clock signals to... Agent: International Business Machines Corporation

20130049828 - Ac supply noise reduction in a 3d stack with voltage sensing and clock shifting: There is provided an alternating current supply noise reducer for a 3D chip stack having two or more strata. Each of the strata has a respective one of a plurality of power distribution circuits and a respective one of a plurality of clock distribution circuits arranged thereon. The alternating current... Agent: International Business Machines Corporation

20130049829 - Variable delay line for delay locked loop: In a multi-stage switching-type delay circuit, occurrence of a hazard is inhibited at the time of the switching of the number of stages. With the multi-stage switching-type delay circuit, an input IN of the delay circuit is connected to a stage that is not selected as a path for causing... Agent: Hitachi, Ltd.

20130049830 - Delay lock loop circuit: The invention provides a delay lock loop circuit (DLL) for generating a locked signal, the DLL circuit includes: a phase detector, a first and a second voltage controlled delay chains, a charge pump and a duty cycle detection pump. The phase detector generates a phase detecting result by detecting a... Agent: Elite Semiconductor Memory Technology Inc.

20130049831 - Polyphase clock generator: A polyphase clock generator for use in clock data recovery (CDR) includes a phase selector and a four-to-eight phase converter further including a plurality of delay paths, switches, and phase interpolators. The switches switch over the delay paths so as to select a group of delay paths suited to a... Agent: Nec Corporation

20130049832 - Clock generator with duty cycle control and method: A clock generator circuit for producing a clock output having a controlled duty cycle is disclosed. A bi-stable circuit provides the clock output which is switchable to a first state in response to an edge of the input clock signal and to a second state in response to a feedback... Agent: National Semiconductor Corporation

20130049833 - Semiconductor apparatus: A semiconductor apparatus is provided. The apparatus includes a transmission control unit configured to generate, in response to a received pulse signal having a first pulse width, transmission control signals with a second pulse width larger than the first pulse width and synchronization control signals with a third pulse width... Agent: Hynix Semiconductor, Inc.

20130049834 - Packaging identical chips in a stacked structure: Methods and structures are provided for packaging identically processed chips in a stacked structure. A latch chain includes a first latch chain, having a single or multiple latches, associated with a first chip. The first latch chain is structured to read data information from the first chip. The latch chain... Agent: International Business Machines Corporation

20130049836 - Multi-threading flip-flop circuit: A flip-flop circuit includes a master latch, a master/slave gate, a slave latch, a slave gate, a feedback latch, and a master gate. The master latch has an input and an output. The master/slave gate has an input coupled to the output of the master latch and an output. The... Agent:

20130049835 - Soft error robust low power latch device layout techniques: A latch device and related layout techniques are provided to reduce soft error rates caused by radiation or other exposure to ionized/charged particles. The latch device comprises a pair of cross-coupled inverters forming a storage cell. A pair of clock pass transistors is coupled to the pair of cross-coupled inverters.... Agent: Cisco Technology, Inc.

20130049837 - System-on-a-chip integrated circuit having time code receiver clock source and method of operation thereof: A system-on-a-chip (SoC), a method of serving a Stratum-1 clock signal from an SoC and a device including the SoC. In one embodiment, the SoC includes: (1) a monolithic substrate, (2) a time code receiver clock source supported by the monolithic substrate and configured to receive a timing signal and... Agent:

20130049839 - Circuit arrangement and receiver including the circuit arrangement: According to embodiments of the present invention, a circuit arrangement is provided. The circuit arrangement includes a first input terminal and a second input terminal, a first transistor and a second transistor, each of the first transistor and the second transistor having a first controlled terminal, a second controlled terminal... Agent: Agency For Science, Technology And Research

20130049838 - Powering universal serial bus systems: Described embodiments provide for a regulated voltage supply to a Universal Serial Bus (USB) system. The regulator comprises a pass device that might be coupled to a host device providing a bus voltage. An integrated USB physical layer (PHY) is coupled to the pass device through a control voltage signal... Agent: Lsi Corporation

20130049840 - Implementing differential resonant clock with dc blocking capacitor: A method and circuit for implementing differential resonant clocking with a DC blocking capacitor, and a design structure on which the subject circuit resides are provided. An on-chip inductor and an on-chip capacitor are connected between a pair of differential active clock load nodes to form a resonant tank circuit.... Agent: International Business Machines Corporation

20130049841 - True rms power measurement: Systems and methods are provided for power measurement of signals such that the power measurement is insensitive to PVT variations of the measurement systems. A power measurement system includes an analog squarer circuitry, an integrating ADC, and a controller. The squarer circuitry calculates the power of a signal whose power... Agent: Scintera Networks, Inc.

20130049842 - Radio frequency circuit and mixer: A radio frequency circuit includes a transformer, a local oscillator, a first mixer, a second mixer, a first variable gain amplifier, and a second variable gain amplifier. The first mixer includes a first inductor that is coupled between a positive in-phase input and a negative in-phase input. The second mixer... Agent: Richwave Technology Corp.

20130049843 - Reverse conduction mode self turn-off gate driver: There is provided a power electronic module that includes a power switch module and a drive circuit operatively coupled to the power switch module. The drive circuit is configured to enable and disable a forward conduction mode operation of the switch module. The drive circuit disables forward conduction mode operation... Agent:

20130049844 - Capacitive touch sensor having light shielding structures: This disclosure provides systems, methods, and apparatus related to a capacitive touch sensor with light shielding structures. In one aspect, a device includes an array formed by a plurality of row electrodes and a plurality of non-transparent column electrodes, wherein at least a first portion of the row electrodes is... Agent: Qualcomm Mems Technologies, Inc.

20130049845 - Differential integrated input circuit: An apparatus, system, and method are provided for a differential integrated input circuit. The apparatus includes n-type semiconductor devices and p-type semiconductor devices. The p-type semiconductor devices are cross-coupled with the n-type semiconductor devices. Each of the p-type semiconductor devices biases a corresponding n-type semiconductor device.... Agent: Nxp B.v.

20130049846 - Circuit structure with resistors or capacitors: A circuit structure with a capacitor or a resistor includes a semiconductor substrate, a first conductive region positioned in the semiconductor substrate, a plurality of second conductive regions and third conductive regions positioned in the first conductive region, a first depletion region positioned between the first conductive region and the... Agent: Nan Ya Technology Corporation

20130049847 - Bootstrapping techniques for control of cmos transistor switches: Techniques to provide bootstrap control of a CMOS transistor switch. The techniques may include driving a control terminal of a CMOS transistor switch to a first predetermined voltage to set the CMOS transistor switch to an off-state. The first predetermined voltage may be drained to a discharge voltage and the... Agent: Analog Devices, Inc.

20130049848 - Electronic component and reflected-wave cancelling method: An electronic component includes a driver that outputs a signal to a reception apparatus; a storage device storing therein reflection information related to a reflected wave that returns to the driver when the signal is reflected back by the reception apparatus; a reflected wave detector that based on the reflection... Agent: Fujitsu Limited

20130049849 - Filter system capable of automatically adjusting bandwidth and method of automatically adjusting bandwidth of a filter: A filter system capable of automatically adjusting bandwidth includes a filter and an adaptive unit. The filter is used for filtering a digital signal to generate an output signal to an application unit. The adaptive unit is used for generating an adjustment signal to the filter according to the digital... Agent:

20130049850 - Charge domain filter apparatus: A charge domain filter (CDF) apparatus having a bandwidth compensation circuit is provided. The bandwidth compensation circuit includes a configurable power-reference cell (CPC) and/or a programmable-delay cell (PDC). The CPC receives and adjusts an output of the CDF to obtain a sensing power, and outputs the sensing power to the... Agent: Industrial Technology Research Institute

20130049851 - Active pull-up/pull-down circuit: A circuit includes circuit portions operating from separate power supplies which are switched sequentially. An output of a first portion powered by a power supply (A) is provided as an input to a second portion powered by another power supply (B). Power supply (A) is switched-ON a delay interval later... Agent: Texas Instruments Incorporated

20130049852 - Mofset mismatch characterization circuit: A semiconductor device comprising a first inverter circuit including a first PMOS transistor and a first NMOS transistor, a drain electrode of the first PMOS transistor coupled to a drain electrode of the first NMOS transistor, and a second inverter circuit including a second PMOS transistor and a second NMOS... Agent:

20130049853 - Suppression of overvoltage caused by an indirect lightning strike: A coupling circuit for a bus subscriber on a bus line of a field bus with DC-voltage-free and differential EIA-485/EIA-422-compliant signal transmission according to a TTP protocol, in which the two inputs/outputs of a transmission/reception component of the bus subscriber are connected to a first winding of a signal transformer,... Agent: Fts Computertechnik Gmbh

20130043907 - Method and system for measuring amplitude and phase difference between two sinusoidal signals: A method and a system for measuring amplitude and phase difference between two sinusoidal signals, using an adaptive filter. The method generally comprises measuring a sample of an output signal of a system excited by a sample of a reference signal; using an adaptive filter and the sample of the... Agent: Soft Db Inc.

20130043908 - Sensor interface making use of virtual resistor techniques: Some embodiments of the present disclosure relate to a sensor interface module. The sensor interface module includes a comparator having a first comparator input, a second comparator input, and a comparator output. A current- or voltage-control element has a control terminal coupled to the comparator output and also has an... Agent: Infineon Technologies Ag

20130043909 - Phase adjustment apparatus and clock generator thereof and method for phase adjustment: A phase adjustment apparatus for providing a clock signal to a core circuit is provided. The core circuit is powered by a core voltage. The phase adjustment apparatus includes two clock receiving ends, a plurality of digital receiving ends and a combination circuit. The two clock receiving ends receive two... Agent: Mstar Semiconductor, Inc.

20130043910 - Driver circuit for driving a load circuit: Driver circuits (1) for driving load circuits (2, 3) receive source signals from sources and provide feeding signals to the load circuits (2,3) and charging signals to capacitor circuits (21). These capacitor circuits (21) provide supporting signals to the load circuits (2, 3) in addition to the feeding signals. By... Agent: Koninklijke Philips Electronics, N.v.

20130043911 - Semiconductor device and electronic device including semiconductor device: It is an object to suppress deterioration in characteristics of a transistor in a driver circuit. A driver circuit includes a first transistor, a second transistor including a gate and one of a source and a drain to which a second signal is inputted, a third transistor whose gate is... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130043912 - Start-up circuit: Aspects of the disclosure provide a circuit. The circuit includes a depletion mode transistor coupled to a power supply and a current path coupled with the depletion mode transistor in series to provide a current to charge a capacitor. The current path has a first resistance during a first stage,... Agent:

20130043913 - Frequency divider for generating output clock signal with duty cycle different from duty cycle of input clock signal: A frequency divider includes a plurality of logic circuit blocks. Each of the logic circuit blocks has a plurality of control terminals. At least one of the control terminals of one of the logic circuit blocks is arranged to receive an input clock signal having a first duty cycle. At... Agent: Mediatek Inc.

20130043914 - Time-based apparatus and method to mitigate semiconductor aging effects: Systems, methods, and computer readable media that can mitigate the effects of semiconductor aging in a semiconductor device are described. Traditional methods of mitigating semiconductor aging can be wasteful since they overcorrect for aging using a high operational voltage. The approach discussed herein steps up the operational voltage for the... Agent: Broadcom Corporation

20130043915 - Circuits and methods for signal transfer between different clock domains: In certain embodiments, a circuit for transferring signals from a source clock domain to a destination clock domain comprises a first pulse generation circuit, a hold flip-flop circuit, a clocked synchronizer circuit and a second pulse generation circuit. The first pulse generation circuit, operable in the source clock domain, generates... Agent: Texas Instruments Incorporated

20130043916 - Wave clocking: Embodiments provide systems and methods for dynamically regulating the clock frequency of an integrated circuit (IC) based on the IC supply voltage. By doing so, the clock frequency is no longer constrained by a worst-case voltage level, and a higher effective clock frequency can be supported, increasing the IC performance.... Agent: Broadcom Corporation

20130043917 - Hardware controlled pll switching: A system and method for efficiently managing multiple PLLs on a system on a chip (SOC). A SOC includes a hardware phase lock loop (PLL) switching control block coupled to a software interface. The hardware PLL switching (HPS) control block receives PLL switch requests from software. The request identifies a... Agent:

20130043918 - Multi phase clock signal generator, signal phase adjusting loop utilizing the multi phase clock signal generator, and multi phase clock signal generating method: A multi-phase clock signal generator, comprising: a ring phase shifting loop, including a plurality of controllable delay cells, for generating output clock signals having different phases via the controllable delay cells according to a input clock signal, wherein delay amount of the controllable delay cells are determined by a biasing... Agent:

20130043919 - Semiconductor device having delay line: Disclosed herein is a device that includes a plurality of one-shot pulse generation circuits connected in series between an input node and an output node. Each of the one-shot pulse generation circuits receives an input clock signal supplied from previously connected one-shot pulse generation circuit to output an output clock... Agent: Elpida Memory, Inc.

20130043920 - Digital phase-locked loop apparatus using frequency shift keying and method of controlling the same: A digital phase-locked loop apparatus using FSK includes a PFD detecting phase differences between a reference clock and a frequency-divided signal, and a first adder for generating first digital control codes by adding first digital codes, second digital codes, and channel frequency codes including channel information to each other, the... Agent: Electronics And Telecommunications Research Institute

20130043921 - Glitch hardened flop repeater: A repeater circuit is disclosed. The circuit includes an input stage configured to receive an input signal and a clock signal. An output stage is configured to drive an output signal on an output node to a first state responsive to a first transition of the input signal on the... Agent:

20130043922 - Supply collapse detection circuit: A supply collapse detection circuit is described. The supply collapse detection circuit includes threshold detection circuitry coupled to a first power supply and to a second power supply that provides a second voltage. The supply collapse detection circuit also includes supply collapse output circuitry coupled to the threshold detection circuitry... Agent: Qualcomm Incorporated

20130043923 - Uniform-footprint programmable multi-stage delay cell: Described embodiments provide a delay cell for a complementary metal oxide semiconductor integrated circuit. The delay cell includes a delay stage to provide an output signal having a programmable delay through the delay cell. The delay cell has a selectable delay value from a plurality of delay values, where the... Agent: Lsi Corporation

20130043924 - Systems, methods, and apparatus for high-speed signal buffer circuitry: Certain embodiments of the invention may include systems, methods, and apparatus for providing an integrated high-speed signal buffer circuit. According to an example embodiment of the invention, a method is provided for driving a clock signal. The method includes configuring a clock driver circuit with a differential clock buffer output... Agent: The Aerospace Corporation

20130043925 - Semiconductor integrated circuit having voltage stabilizing circuit: A semiconductor integrated circuit includes a first voltage supply unit, a second voltage supply unit configured to supply a voltage with a level different from that of the first voltage supply unit, and a voltage stabilizing unit connected between the first and second voltage supply units, and including at least... Agent:

20130043926 - Level shift circuit: In a level shift circuit allows satisfactory operation with short delay time in the case of low-voltage setting of a low-voltage source, for example, when a state of an input signal IN transitions from a H (VDD) level to a L level, a node W2 precharged to a H (VDD3)... Agent: Panasonic Corporation

20130043927 - Integrated circuit with pre-heating for reduced subthreshold leakage: Certain semiconductor processes provide for the use of multiple different types of transistors with different threshold voltages in a single IC. It can be shown that in certain ones of these semiconductor processes, the speed at which high threshold transistors can operate at decreases with decreasing temperature. Thus, the overall... Agent: Broadcom Corporation

20130043928 - Motion sensing switch: Disclosed is a motion detection switch, and more particularly a motion detection switch which can recognize motion of a reflector moved at an upper side of a display part of a mobile phone, and can control the mobile phone without any touching operation. The motion detection switch recognizes motion of... Agent: Hysonic Co., Ltd.

20130043929 - Power supply devices and control method thereof: A power supply device is provided. The power supply device provides a maintenance voltage at an output terminal to a system chip of a system and includes a first battery, a capacitor, a charging circuit, and a monitoring circuit. The first battery provides a battery voltage. The capacitor stores a... Agent: Wistron Corporation

20130043930 - Charge pump: A charge pump exhibiting a voltage compensation function is provided. The charge pump includes: a first current generator, a first semiconductor device, a second current generator, a second semiconductor device, and a voltage regulator. The voltage regulator dynamically adjusts a voltage level at the gate of the first or second... Agent: United Microelectronics Corporation

20130043932 - Charge-pump system for providing independent voltages: Disclosed is a charge pump system having a charge pump with a switch control input, a voltage output terminal, a high voltage terminal coupled to a high voltage node and a low voltage terminal coupled to a low voltage node. Also included is a first buck/boost switch having a first... Agent: Rf Micro Devices, Inc.

20130043933 - Internal voltage generator and semiconductor memory device including the same: A semiconductor device including an internal voltage generator circuit that provides an internal voltage having a different level depending on the operation speed is provided. The semiconductor device includes an internal voltage generator circuit configured to receive operation speed information to generate an internal voltage having a different level depending... Agent:

20130043931 - Single charge-pump buck-boost for providing independent voltages: Disclosed is a charge pump having first and second outputs and at least one capacitor. A plurality of switches are coupled to the at least one capacitor for selectively coupling the at least one capacitor between a high voltage node and a low voltage node, and for selectively coupling the... Agent: Rf Micro Devices, Inc.

20130043934 - Analog floating gate charge loss compensation circuitry and method: An analog floating gate circuit (10-3, 10-4) includes a first sense transistor (21, 3), a first storage capacitor (20, 5), and first (24, 4) and second (31A, 42) tunneling regions. Various portions of a first floating gate conductor (12, 2) form a floating gate of the first sense transistor, a... Agent: Texas Instruments Incorporated

20130043936 - Method and apparatus for controlling power supply: A method for controlling the power supply of an integrated circuit, the power supply comprising a power supply unit powered by a main voltage and possessing several transistor groups, comprising turning on in succession at least two transistor groups in order to deliver, as an output from each group, to... Agent: Stmicroeletronics Sa

20130043935 - Power boosting circuit for semiconductor packaging: A microelectronic package includes a microelectronic element operable to output a discrete-value logic signal indicating an imminent increase in demand for current by at least some portion of the microelectronic element. An active power delivery element within the package is operable by the logic signal to increase current delivery to... Agent: Tessera, Inc.

20130043937 - Apparatus and method for electrical biasing: As provided herein, in some embodiments, power consumption and/or chip area is reduced by bias circuits configured to provide bias conditions for more than one active circuit, thereby reducing the number of bias circuits in a design. Shared bias circuits may reduce the aggregate amount of on-chip area utilized by... Agent: Analog Devices, Inc.

20130043938 - Low voltage analog switch: A switch for an analog signal may include a main MOS transistor whose source forms an input terminal of the switch and whose drain forms an output terminal of the switch, a capacitor having a first terminal permanently connected to the source of the main transistor, a circuit for charging... Agent: Stmicroelectronics (grenoble 2) Sas

20130043940 - Back-to-back stacked dies: Embodiments disclosed herein provide for a circuit including first die having an active side and a backside, wherein the first die is flip-chip mounted to a carrier. The circuit also includes a second die stacked on the backside of the first die, wherein the second die is stacked on the... Agent: Intersil Americas LLC

20130043939 - Integrated circuit with an adaptable contact pad reconfiguring architecture: An apparatus and method are disclosed for providing test mode contact pad reconfigurations that expose individual internal functional modules or block groups in an integrated circuit for testing and for monitoring. A plurality of switches between each functional module switches between passing internal signals among the blocks and passing in/out... Agent: Broadcom Corporation

20130043941 - Current-sensing circuit: In one embodiment, a circuit is provided. The circuit includes a low-ohmic circuit and a a power supply node configured and arranged for providing a supply voltage across the low-ohmic circuit to a load from which current can be drawn. The circuit also includes a current reference circuit, configured and... Agent:

20130038351 - Phase detector: A phase detection system for providing a phase signal indicative of a phase difference between first and second input signals, with the system including a pair of amplification channels for receiving the input signals, with each channel including a plurality of amplifier stages. The outputs of the two amplification channels... Agent: National Semiconductor Corporation

20130038352 - Circuits and methods for clock malfunction detection: Circuit for detecting malfunction of a primary clock in SoCs comprises a primary clock circuit having a GRAY code counter for generating a GRAY code sequence based on a number of clock pulses generated Primary clock. A secondary clock circuit is configured to output a secondary clock pulse on each... Agent: Texas Instruments Incorporated

20130038353 - System and method for simulating biofidelic signals: A system for simulating biofidelic signals includes a transducer and a neural transmitter port. The transducer is affected by a parameter and provides an alternating electrical signal based on an effect of the parameter. The neural transmitter port receives a processed electrical signal and outputs the processed electrical to a... Agent: The Johns Hopkins University

20130038354 - Discharge path circuit of an input terminal for driver ic: Disclosed is a discharge path circuit of input terminal for a driver IC (Integrated Chip), the circuit providing a discharge path to the input terminal of the driver IC including a power input port connected to a first input and an operation mode selection port connected to a second input,... Agent: Lg Innotek Co., Ltd.

20130038357 - Dynamic switch driver for low-distortion programmable-gain amplifier: A switching circuit for switching a time-varying input signal, the switching circuit comprising: at least one switch including a N-channel MOSFET and a P-channel MOSFET, each having a gate configured to receive a drive signal to change the ON/OFF state of the switch; and a drive circuit configured and arranged... Agent: That Corporation

20130038355 - Output driving circuit and transistor output circuit: The present invention relates to an output driving circuit and a transistor output circuit. In accordance with an embodiment of the present invention, an output driving circuit including: a first driving circuit unit driven according to on operation of a first switch to supply high voltage power source to a... Agent:

20130038356 - Output driving circuit and transistor output circuit: Disclosed herein are an output driving circuit and a transistor output circuit. The output driving circuit includes: a reference voltage generating unit generating a reference voltage; a level shift unit including a transistor latch and turning off a first transistor of a driving circuit or driving the first transistor; a... Agent:

20130038359 - Digital glitch filter: A digital glitch filter for filtering glitches in an input signal includes first and second flip-flops and a synchronizer. The synchronizer includes third and fourth flip-flops. A glitch prone input signal is provided to the first and second flip-flops. Additionally, an input clock signal is provided to the first and... Agent: Freescale Semiconductor, Inc

20130038360 - Timing control device and control method thereof: Provided is a timing control device including: a storage unit that stores multiple pieces of timing control information including identification information and expected value data; a first selector that selectively outputs any of the multiple pieces of timing control information; a second selector that selectively outputs any of data items... Agent: Renesas Electronics Corporation

20130038358 - Wireless sensor node and method: Determining time latency at a sensor node in a mesh network. A beacon time is received at the sensor node from an upstream node, the beacon time offset from global time by the latency. The latency, the global time, and a corresponding local time are determined at the sensor node.... Agent:

20130038361 - Power-switch test apparatus and method: Power switching is facilitated. In accordance with one or more embodiments, a power-switch apparatus includes a plurality of switches coupled between a voltage supply and a switched voltage output. A test control circuit operates the switches for testing a subset thereof, therein indicating a condition of the subset, which may... Agent:

20130038362 - Semiconductor switch: According to one embodiment, a semiconductor switch includes a voltage generator, a driver, a switch section, and a power supply controller. The voltage generator is configured to generate a first potential and a negative second potential. The first potential is higher than a power supply voltage supplied to a power... Agent: Kabushiki Kaisha Toshiba

20130038363 - Delay locked loop: A delay locked loop includes a delay adjusting unit configured to delay a first clock signal in outputting a second clock signal phase-locked with the first clock signal and generate a delay control signal in response to the first clock signal and the second clock signal and a variable delay... Agent:

20130038364 - Oscillation circuit and semiconductor integrated circuit including the same: An oscillation circuit includes an RS flip-flop for generating output signals based on a set signal and a reset signal, an electric-charge charge/discharge unit which has first and second capacitors and charges or discharges the first and second capacitors complementarily based on the output signals, a first comparator which compares... Agent: Renesas Electronics Corporation

20130038365 - Sampling phase lock loop (pll) with low power clock buffer: A sampling phase locked loop (PLL) circuit includes a pull-up/down buffer configured to convert an oscillator reference clock into a square wave sampling control signal input to a sampling phase detector. The buffer circuit is configured to reduce power by controlling the switching of the pull-up and pull-down transistors (and... Agent: Texas Instruments Incorporated

20130038366 - Bist circuit for phase measurement: A BIST circuit for high speed applications includes a phase difference detection circuit, a period-to-current conversion circuit having an input coupled to an output of the phase difference detection circuit and a current-to-voltage conversion circuit coupled to an output of the period-to-current conversion circuit. The phase difference detection circuit includes... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130038367 - Device with automatic de-skew capability: A source driver with an automatic de-skew capability is configured to receive a data signal and a clock signal from a timing controller, which are configured to drive a liquid crystal display panel. The source driver includes a signal delay unit, a setup time register, a hold time register, a... Agent: Raydium Semiconductor Corporation

20130038368 - Semiconductor device: A semiconductor device including a common delay circuit configured to delay an input signal in response to a delay control code to output a first delayed input signal and a second delayed input signal; a first delay circuit configured to delay the first delayed input signal in response to the... Agent: Sk Hynix Inc.

20130038369 - Delay cell and digitally controlled oscillator: A delay cell includes a first inverted transistor pair, a second inverted transistor pair and a plurality of delay units. The first inverted transistor pair is used to receive an input signal. The second inverted transistor pair is electrically cross-coupled to the first inverted transistor pair and cross-controlled by the... Agent: National Chiao Tung University

20130038370 - Multi-phase clock generator: A clock generator includes a first latch configured to output a first intermediate clock phase signal based on a first clock signal and a second intermediate clock phase signal. A first phase interpolation circuit has a first input coupled to a first input of the first latch and a second... Agent: Initio Corporation

20130038371 - Scan testing: An electronic system is configured for scan testing, with a clock distribution network going to a plurality of blocks of the system, and a test capture clock being generated locally at each block. Capture clock pulses may optionally be generated at different times for different blocks, and may optionally be... Agent: Texas Instruments Incorporated

20130038373 - Integrated circuit device, calibration module, and method therefor: An integrated circuit device comprising at least one calibration module for calibrating an impedance of at least one on-die interconnect line driver in order to adaptively match an impedance between the at least one on-die interconnect line driver and at least one on-die interconnect line conjugated thereto. The at least... Agent: Freescale Semiconductor , Inc.

20130038372 - Semiconductor device: A second driver is provided in addition to a first driver outputting an output signal in accordance with a voltage of an input signal. When the output signal changes from a first voltage level to a second voltage level in accordance with a voltage change of the input signal, a... Agent: Fujitsu Semiconductor Limited

20130038374 - Buffer circuit with regulating function and regulating circuit thereof: A regulating circuit is used with a buffer circuit. The buffer circuit at least includes a metal-oxide-semiconductor transistor and a voltage output terminal. The voltage output terminal is connected to a drain terminal of the metal-oxide-semiconductor transistor of the buffer circuit. The regulating circuit includes a first metal-oxide-semiconductor transistor and... Agent: United Microelectronics Corporation

20130038375 - Voltage level shifter: A circuit includes a power switch and a level shifter. The level shifter has a node and an assistant circuit. The node is configured to control the power switch. The assistant circuitry is coupled to the node and configured for the node to receive a first voltage value through the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130038376 - Frequency tunable signal source: A frequency tunable signal source (100) with first (105) and a second (115, 315) oscillators, each of which outputs a signal at a fundamental frequency (f1, f2) and at least one signal at a harmonic frequency (f1′, f2′) and a mixer (120) with first (121) and second (122) input ports... Agent: Telefonaktiebolaget L M Ericsson (publ)

20130038377 - Pooled-resource architecture with asynchronous packet-based communication: A chip includes a pool of blocks. Each block is adapted to implement a communication protocol. A cross-connect configurably connects between the blocks. A configured connection through the cross-connect between a sending block and a receiving block includes a lane with a toggle line and multiple data lines. The receiving... Agent: Exar Corporation

20130038379 - Micro structure substrates for sensor panels: A sensor panel comprises a flexible film of a thickness having a first surface and a second surface spaced apart from the first surface by the thickness of the film; an array of micro structures in the flexible film, each micro structure including a chamber formed into the flexible film... Agent:

20130038378 - Touch sensing with a common driver: In one embodiment, an apparatus includes a touch sensor including drive electrodes. The apparatus also includes sense electrodes arranged along a first axis and a second axis. The first and second axes are substantially perpendicular to each other. The apparatus also includes one or more computer-readable non-transitory storage media coupled... Agent:

20130038380 - Iimplementing chip to chip calibration within a tsv stack: A method and circuit for implementing a chip to chip calibration in a chip stack, for example, with through silicon vias (TSV) stack, and a design structure on which the subject circuit resides are provided. A first chip and a second chip are included within a semiconductor chip stack. The... Agent: International Business Machines Corporation

20130038381 - Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances: Improvements in the efficiency of two charge pump designs are presented. As a charge pump switches between modes, capacitances are charged. Due to charge sharing between capacitances, inefficiencies are introduced. Techniques for reducing these inefficiencies are presented for two different charge pump designs are presented. For a clock voltage doubler... Agent: Sandisk Technologies Inc.

20130038382 - Adjustable body bias circuit: Body biasing circuit and methods are implemented in a variety of different instances. One such instance involves placing, a first well of a first body bias island and a second well of a second body bias island in a first bias mode by controlling switches of a body bias switch... Agent:

20130038384 - Canceling third order non-linearity in current mirror-based circuits: A current mirror circuit is described. The current mirror circuit includes a first transistor and a second transistor. The gates of the first transistor and the second transistor are coupled at a bias voltage. The current mirror circuit also includes an auxiliary transistor that is biased into weak inversion by... Agent: Qualcomm Incorporated

20130038383 - Piezoelectric electromechanical devices: An piezoelectric electromechanical transistor has first and second terminals formed in a semiconductor region, a gate and a piezoelectric region between the gate and the semiconductor region. The piezoelectric region may be configured to drive the semiconductor region to vibrate in response to a signal applied to the gate. The... Agent: Massachusetts Institute Of Technology

20130038385 - Semiconductor device and voltage divider: A semiconductor device includes first and second resistors. The first resistor is formed in a first substrate region and coupled between a first node and an output node. The second resistor is formed in a second substrate region and coupled between the output node and a second node. The first... Agent: Fujitsu Semiconductor Limited

20130038386 - Differential transmission circuit: A differential transmission circuit comprises a sending unit that generates a pair of differential signals from an input signal, and sends the differential signals; a receiver that receives the differential signals sent by the sending unit; and a transmission path that transmits the differential signals from the sending unit to... Agent: Canon Kabushiki Kaisha

20130038387 - Detector circuit: A detector circuit can be used for determining the reflection coefficients of HF signals in a signal path. The detector circuit includes a bidirectional hybrid coupler, logarithmic amplifiers connected to the hybrid couple, and a subtractor having an offset connection.... Agent: Epcos Ag

20130033290 - Apparatuses and methods of communicating differential serial signals including charge injection: Apparatuses and methods are disclosed, including an apparatus that includes a differential driver with charge injection pre-emphasis. One such apparatus includes a pre-emphasis circuit and an output stage circuit. The pre-emphasis circuit is configured to receive differential serial signals, and buffer the differential serial signals to provide buffered differential serial... Agent:

20130033291 - Multi-output-resistance switch driver circuits: A switch circuit can include an impedance selection switch and a multi-output-resistance switch driver. The impedance selection switch can electrically connect an impedance to an input of an amplifier in response to a driver output signal, and include at least one transistor. The multi-output-impedance switch driver may provide the driver... Agent: Analog Devices, Inc.

20130033292 - Circuits and methods for latch-tracking pulse generation: Circuits and methods for latch-tracking pulse generation across process, voltage and temperature (PVT) variations are disclosed in one embodiment, the method includes receiving a clock input at a pulse generation circuit and generating a pulse at the pulse generation circuit in response to the clock input. The method further includes... Agent: Qualcomm Incorporated

20130033293 - Phase locked loop with phase correction in the feedback loop: A frequency synthesizer circuit is disclosed. The frequency synthesizer circuit includes a comparator circuit coupled to a reference clock and a phase-corrected output signal. The frequency synthesizer circuit also includes a loop filter coupled to the comparator circuit. The frequency synthesizer circuit also includes an oscillator coupled to the loop... Agent: Qualcomm Incorporated

20130033294 - Counting circuit of semiconductor device and duty correction circuit of semiconductor device using the same: A counting circuit of a semiconductor device includes a plurality of counting units configured to count respective bits of counting codes in response to a plurality of counting clocks, respectively, and to control in a counting direction in response to a counting control signal; a clock toggling control unit configured... Agent:

20130033295 - Clock phase compensation for adjusted voltage circuits: Clock phases of clock signals in a dual clock tree are adjusted to compensate for variances in propagation delays of buffers in the clock tree. A first input clock and a second input clock are generated with the second input clock having a phase that is programmably shifted relative to... Agent:

20130033296 - Phase shifter: A 0-to-90-degree phase shifter (13) includes a voltage-variable power supply (16), a transistor (17), a 90-degree divider (18), gain-variable amplifiers (19) (19-1 and 19-2), and a combiner (20). The 90-degree divider (18) divides an input signal into a signal to which a 90-degree phase is given and a signal to... Agent: Nec Corporation

20130033297 - Semiconductor circuit: The present invention relates to a semiconductor circuit including: a delay unit for delaying an input signal by a predetermined time to output the delayed signal; a voltage adjusting unit for charging and discharging voltage according to a level of the input signal; and a combination unit for controlling the... Agent:

20130033298 - Double-swing clock generator and charge pump: A double-swing clock generator includes a first double-swing clock generation circuit and a second double-swing clock generation circuit. The first double-swing clock generation circuit is used for receiving a first voltage, a second voltage, a first clock, an inverse first clock, and a third voltage, and outputting a first double-swing... Agent:

20130033299 - Apparatus for interfacing circuit domains: An interface circuit for controlling a cross-domain signal link between a first circuit domain and a second circuit domain in a circuit may include first and second controllers, each of the first and second controllers including a first input coupled to a first voltage source of the first circuit domain... Agent: Analog Devices, Inc.

20130033300 - Semiconductor device and solid state relay using same: A semiconductor device includes one or more transistor cells mounted on a first conductive type silicon carbide (SiC) substrate, wherein each of the transistor cells includes a second conductive type wall region formed on a first surface of the SiC substrate, a first conductive type source region formed in the... Agent: Panasonic Corporation

20130033301 - Structure of output stage: A structure of an output stage, and the structure includes a first electrode, a second electrode, a third electrode, a plurality of first auxiliary electrodes, a plurality of second auxiliary electrodes, a plurality of third auxiliary electrodes, a plurality of fourth auxiliary electrodes, a first switching unit, and a second... Agent: Himax Technologies Limited

20130033302 - Input switches in sampling circuits: A switch may include a MOS transistor alternatively operating in an ON phase and an OFF phase, a first voltage level shifter, and a second voltage level shifter. The MOS transistor may include a source for receiving an input signal, a drain for connecting to a load, and a gate.... Agent: Analog Devices, Inc.

20130033303 - Integrated circuit: An integrated circuit is provided with a substrate, an electrode, two diffusion areas, and a resistance heater. The substrate includes a first surface and second surface that are substantially parallel to each other. The electrode is laminated onto the first surface. The two diffusion areas are disposed within the substrate... Agent:

20130033304 - Two-stage pulse signal controller: An apparatus and method for controlling a device using pulse signals. In the apparatus and method, a two-stage control is used to generate pulse signals, which can be a PWM signal, a pulse signal including a PWM signal with a sleeping time, or a PDM signal. The two-stage control includes... Agent:

20130033305 - Reference voltage generating circuit: A reference voltage generating circuit that accurately corrects temperature characteristics of a BGR (bandgap reference) circuit and a regulator. A voltage dividing circuit outputs first and second voltages obtained by dividing a BGR voltage. The regulator includes a differential amplifier, first and second resisters coupled in series between the output... Agent: Renesas Electronics Corporation

20130033306 - Performance of digital circuits using current management: A method, system, and computer program product for improving the performance of a digital circuit are provided in the illustrative embodiments. A real frequency of operation of the digital circuit is adjusted using a control loop in the digital circuit, the adjusting the real frequency being responsive to a change... Agent: International Business Machines Corporation

20130033307 - High accuracy rc calibradion circuit: In an RC calibration circuit, a single reference current is used to generate voltages across both a resistive and capacitive element. The component value of one of the resistive and capacitive element is successively altered until the voltages are substantially equal. Additionally, parasitic capacitances in the circuit are precharged to... Agent:

20130033308 - Semiconductor device: A semiconductor integrated circuit device includes a functional circuit part that includes a plurality of field effect transistors, a mode control circuit that receives a first control signal and that generates a second control signal that is used to change a logic state of the functional circuit part, an output... Agent: Renesas Electronics Corporation

20130033309 - Poly silicon resistor, reference voltage circuit comprising the same, and manufacturing method of poly silicon resistor: The present invention relates to a polysilicon resistor, a reference voltage circuit including the same, and a method for manufacturing the polysilicon resistor. The polysilicon resistor according includes a first polysilicon resistor and at least one of second polysilicon resistors, coupled to the first polysilicon resistor in series. The first... Agent:

20130033310 - Carbon nanotube crossbar based nano-architecture: Carbon nanotubes (CNTs) and carbon nanotube field effect transistors (CNFETs) have demonstrated extraordinary properties and are widely accepted as the building blocks of next generation VLSI circuits. A CNT crossbar based nano-architecture, includes layers of orthogonal carbon nanotubes with electrically bistable and charge holding molecules at each crossing, forming a... Agent:

20130033311 - Cell interface: The invention related in cell interface is a circuit of diode D1 to D4, comprises: a first terminal connected to positive voltage terminal of first cell E1; a second terminal connected to positive voltage terminal of second cell E2; and a third terminal connected to external positive terminal VP, the... Agent: