|Miscellaneous active electrical nonlinear devices, circuits, and systems patents - Monitor Patents|
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Miscellaneous active electrical nonlinear devices, circuits, and systems May archived by USPTO category 05/11Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 05/26/2011 > 33 patent applications in 28 patent subcategories. archived by USPTO category
20110121863 - Sense amplifier for low voltage high speed sensing: A memory system includes a sense amplifier for detecting content of data memory cells by comparison with a voltage stored in a reference cell. The sense amplifier may comprise a comparator, first and second load circuits, and a low impedance circuit. A first input of the comparator is coupled to... Agent: Silicon Storage Technology, Inc.
20110121864 - Start signal detector circuit: The nonlinearity effect of a rectifying element is enhanced, and further a resonant circuit is used to enlarge the input amplitude. Furthermore, the rectifying efficiency of a detection rectifier circuit is enhanced, thereby allowing the gain of an amplifier circuit in the following stage to be set to a low... Agent: Nec Corporation
20110121865 - Systems and methods for detecting interference in an integrated circuit: Apparatus, systems and methods are provided for protecting a processing system from electromagnetic interference. An integrated circuit comprises a sensing arrangement configured to sense an interference signal and an interference detection module coupled to the sensing arrangement. The interference detection module is configured to detect when a power level associated... Agent: Freescale Semiconductor, Inc.
20110121866 - Frequency difference detection apparatus and method, frequency discrimination apparatus and method, and frequency synthesis apparatus and method: An apparatus having a complex sine wave generating circuit (3) that generates a complex sine wave, a multiplying circuit (4) that multiplies an input signal by the complex sine wave, a first integrating circuit (5) that integrates the product obtained by the multiplying circuit (4) in the time direction, a... Agent:
20110121867 - High-speed compression architecture for memory: Memory design techniques are disclosed that provide a high compression ratio at no loss in speed. The techniques can be embodied, for instance, in heterojunction bipolar transistor (HBT) based ROMs. By embedding compression logic (e.g., XOR) functionality directly into the address decoders and sense amplifiers of the memory device, a... Agent: Bae Systems Information And Electronic Systems Integration Inc.
20110121868 - Clock buffer: An apparatus is provided. The apparatus comprises a first bipolar junction transistor (BJT) differential pair having a first BJT and a second BJT, a second BJT differential pair having a third BJT and a fourth BJT, a first clamp having a fifth BJT and a sixth BJT, and a second... Agent: Texas Instruments Incorporated
20110121869 - Frequency divider systems and methods thereof: At least one example embodiment provides for a frequency divider system including a delay unit configured to receive a first input clock signal having a first input clock frequency and a requirement and output a modified clock signal, and a frequency divider configured to receive the modified clock signal and... Agent: Samsung Electronics Co., Ltd.
20110121870 - Voltage detector: A voltage detector includes a first input terminal, a second input terminal, a first voltage detection circuit, a second voltage detection circuit, and a logic holder circuit. The first input terminal receives a first input voltage. The second input terminal receives a second input voltage. The first voltage detection circuit... Agent: Ricoh Company, Ltd.
20110121871 - Current converting method, transconductance amplifier and filter circuit using the same: The present invention is intended to achieve a transconductance amplifier and a voltage/current converting method which can provide a sufficient amplitude and a high degree of design freedom. The method comprises the steps of converting a first voltage signal to a first current signal; converting a second voltage signal to... Agent: Nec Corporation
20110121873 - Phase locked loop including a frequency change module: A phase locked loop (PLL) includes a detector, a charge pump, a loop filter, a voltage controlled oscillator (VCO), a divider, and a frequency change module. The detector provides a phase difference based on a reference signal and a feedback signal. The charge pump provides a charge based on the... Agent: Broadcom Corporation
20110121872 - Semiconductor device, wireless communication device and method for generating a synthesized frequency signal: A semiconductor device comprises synthesized frequency generation logic arranged to receive a reference signal, and to generate a synthesized frequency signal from the reference signal. The synthesized frequency generation logic comprises programmable divider logic arranged to receive the reference signal and to generate a divided signal comprising a frequency with... Agent: Freescale Semiconductor, Inc.
20110121874 - Systems and methods for pll linearity measurement, pll output duty cycle measurement and duty cycle correction: Systems and methods for enabling the determination of voltage controlled oscillator (VCO) linearity, duty cycle determination and duty cycle correction in phase locked loop circuits (PLL's.) One embodiment comprises a method including the steps of determining the frequency response of a PLL's VCO as a function of duty cycle, applying... Agent:
20110121875 - Power-mode-aware clock tree and synthesis method thereof: A power-mode-aware (PMA) clock tree and a synthesis method thereof are provided. The clock tree includes a sub clock tree and a PMA buffer. The sub clock tree transmits a delayed clock signal to a function module, wherein a power mode of the function module is determined according to a... Agent: National Tsing Hua University
20110121877 - Self-timed rs-trigger with the enhanced noise immunity: The invention describes self-timed RS-trigger with the enhanced noise immunity. Declared effect is achieved due to that circuit containing storage unit (1), indication unit (2), paraphase data input (3, 4), paraphase data output (5, 6), and indication output (7), is modified by adding two inverters (8, 9) and preindication unit... Agent: Institute Of Informatics Problems Of The Russian Academy Of Sciences (ipi Ran)
20110121876 - State retention circuit and method of operation of such a circuit: A state retention circuit is provided comprising a pulse generator which is configured in a non-retention mode of operation to be responsive to a clock signal to periodically assert a pulse, and a storage structure that comprises a storage element for storing state and an isolation structure for responding to... Agent: Arm Limited
20110121878 - Nonvolatile latch circuit and logic circuit, and semiconductor device using the same: To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110121879 - Method of automatic gain modulation and apparatus implementing the same: Provided is method for automatic audio gain modulation and a related apparatus. In order to prevent the unstable signals as continuously increasing or decreasing the gain when the signals hover around an upper threshold, it's featured that the method is to predict the signal intensity as pre-adding a predict gain... Agent: C-media Electronics Inc.
20110121880 - Dc offset cancellation circuit: A DC offset cancellation circuit includes: a control signal generation unit generating i (i is a natural number) number of pulse signals having a pulse width corresponding to a DC offset amount; a current source supplying i number of currents each having a different current ratio; a switching unit determining... Agent: Electronics And Telecommunications Research Institute
20110121881 - Multiple input / gain stage gilbert cell mixers: Multiple input and/or gain stage Gilbert cell mixer designs are disclosed. The designs allow one input to be turned on at a time, and are suitable, for example, for use in receiver and transmitter applications. In addition, the designs allow for the inputs of the multi-input Gilbert cell mixer to... Agent: Bae Systems Information And Electric Systems Intergrations Inc.
20110121882 - Circuit for detecting management engine state: A circuit for detecting management engine (ME) state of a computer includes first and second electrical switches, and an indicating circuit. The first and second electrical switches are connected to a south bridge of the computer and respectively receive an ME state signal and a startup signal from the south... Agent: Hon Hai Precision Industry Co., Ltd.
20110121884 - Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein: A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on... Agent: Semisouth Laboratories, Inc.
20110121883 - System and method for providing symmetric, efficient bi-directional power flow and power conditioning: A system and method for providing symmetric, efficient bi-directional power flow and power conditioning for high-voltage applications. Embodiments include a first vertical-channel junction gate field-effect transistor (VJFET), a second VJFET, a gate drive coupled to the first VJFET gate and the second VJFET gate. Both VJFETs include a gate, drain... Agent: Northrop Grumman Systems Corporation
20110121885 - Current reference source circuit that is independent of power supply: A current reference source circuit that is independent of power supply which is used for producing a current reference source that is independent of power supply, the circuit at least includes a resistor Rs and a mirror image circuit which is formed with four MOSs, M1, M2, M3, M4, there... Agent: Ipgoal Microelectronics (sichuan) Co., Ltd.
20110121886 - Clock detector and bias current control circuit: Provided are a clock detector and a bias current control circuit. The clock detector outputs a digital code corresponding to the frequency of an input clock, and the bias current control circuit controls a bias current supplied to an analog circuit according to the digital code output from the clock... Agent: Electronics And Telecommunications Research Institute
20110121887 - Semiconductor device: An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110121888 - Leakage current compensation: Implementations related to compensating for on-current leakage associated with current source arrangements are disclosed. An implementation may be provided that includes a replicated current mirror output stage. A circuit may be disposed between a current mirror output stage and the replicated current mirror output stage. The circuit may be implemented... Agent:
20110121889 - Temperature independent reference circuit: A temperature independent reference circuit includes first and second bipolar transistors with commonly coupled bases. First and second resistors are coupled in series between the emitter of the second bipolar transistor and ground. The first and second resistors have first and second resistance values, R1 and R2, and third and... Agent: Power Integrations, Inc.
20110121890 - Semiconductor device: This invention allows for stable operation of a circuit to which an output voltage is supplied. The invention resides in a semiconductor device comprising a VREF1 regulator to which a reference voltage Vref1 relative to a first potential is input; and an output circuit which generates an output voltage Vint... Agent: Renesas Electronics Corporation
20110121891 - Electronic control module for a jfet transistor: An electronic control module for a field effect transistor includes a gate, a drain and a source. The electronic control module includes: a control circuit including: a power supply able to provide a fixed potential to the gate of the field effect transistor; and an amplifier stage able to vary... Agent: Hispano Suiza
20110121892 - Motion triggered magnetic reading and compass heading calculations to reduce power consumption: A method for reducing power consumption of an electronic device is disclosed. In one embodiment, an indication that an electronic device is oriented in a first orientation is received. An indication of rotation of the electronic device around an axis is received. A command is then generated to cause an... Agent:
20110121893 - Charge domain filter: A charge domain filter having a phase divider, first switched capacitor networks, second switched capacitor networks and a connecting circuit. The phase divider receives a first and a second input signal to output first phase divided signals based on the first input signal and second phase divided signals based on... Agent: Industrial Technology Research Institute
20110121894 - Apparatus and method for power added efficiency optimization of high amplification applications: A power added efficiency optimizer apparatus is provided for measuring and monitoring input and output power of an amplifying device, and adjusting the load impedance seen by the amplifying device so that power added efficiency is maintained at optimum levels. A power added efficiency optimizing device includes a variable load... Agent: Onq Technology, Inc.
20110121895 - Control and readout of electron or hole spin: This invention concerns an electronic device for the control and readout of the electron or hole spin of a single dopant in silicon. The device comprises a silicon substrate in which there are one or more ohmic contact regions. An insulating region on top of the substrate. First and second... Agent:05/19/2011 > 32 patent applications in 25 patent subcategories. archived by USPTO category
20110115525 - Device for detecting the peak value of a signal: A device for detecting the peak value of a signal with crest factor not known a priori includes a pair of peak detectors, each of which includes a rectifier element and a discharge-current generator and generates a respective output signal that is a function of the ratio between a physical... Agent: St-ericsson Sa
20110115526 - Microcomputer, hysteresis comparator circuit, and voltage monitoring apparatus: A microcomputer includes a first comparator which compares a voltage to be monitored, with a first reference voltage, a second comparator which compares the voltage to be compared, with a second reference voltage, and an interrupt control circuit which monitors the voltage to be monitored by the first and second... Agent: Renesas Electronics Corporation
20110115527 - Method and detector for determining a state of a switch: In an integrated circuit, a state of a switch coupled to the integrated circuit is determined by comparing a switch voltage at a first terminal of the switch to a reference voltage at a first time. If the switch voltage is higher than the reference voltage, the switch is determined... Agent:
20110115528 - Reference voltage generating circuit and receiver circuit: Disclosed is a reference voltage generating circuit including a constant current circuit which comprises: a first resistive element and a bipolar transistor connected in series between a supply voltage terminal and a constant potential point; a first MOS transistor having a gate connected to a node connecting the first resistive... Agent: Mitsumi Electric Co., Ltd.
20110115529 - Latched comparator circuit: s
20110115530 - Output current detecting circuit and transmission circuit: An output current detecting circuit includes: a current detecting transistor having a size smaller than that of an output transistor and a control terminal, to which a voltage same as a control voltage of the output transistor is applied; a sensing resistor connected to the current detecting transistor in a... Agent: Mitsumi Electric Co., Ltd.
20110115531 - Pll circuit: A PLL comprises a current-controlled oscillator (18) for generating an output clock signal based on a current signal generated based on a phase difference between a reference clock signal and a feedback clock signal, a current source (28), and an initialization switch (26) for performing an open/close operation based on... Agent: Panasonic Corporation
20110115532 - Multilevel converter operation: A method of operating a neutral point clamped (NPC) three level converter is provided. The NPC converter includes at least two legs, each leg comprising first and second top switches connected in series at a first mid point. The converter further includes first and second bottom switches connected in series... Agent: General Electric Company
20110115533 - Power-on-reset circuit with brown-out reset for multiple power supplies: A power-on reset circuit includes a first circuit and a second circuit. The first circuit include a first NMOS transistor having a gate controlled by a low voltage supply VDD_L, a resistor connected between the source of the first NMOS transistor and a voltage supply VSS that is lower than... Agent:
20110115534 - Optical frequency source: A frequency reference, comprising: an optical waveguide closed on itself so that a light pulse inserted into the waveguide circulates therein; a light source coupled to the waveguide and controllable to generate a light pulse that circulates in the waveguide; and a detector coupled to a region of the waveguide... Agent: Rad Data Communications Ltd.
20110115535 - Loop filter and phase locked loop including the same: Provided is a loop filter which receives first and second currents whose current ratio is n (where n is a natural number). The loop filter includes a first-order filter path, a second-order filter path, and a third-order filter path. The first-order filter path includes an operational amplifier generating an output... Agent: Electronics And Telecommunications Research Institute
20110115536 - Adc having inproved sample clock jitter performace: In conventional analog-to-digital converter (ADC) systems, jitter can be a problem because of delay circuits within the sample signal path. Here, an ADC system is provided with a modified delay locked loop (DLL), namely having a variable delay and a fixed delay. The modification to the delay line of DLL... Agent: Texas Instruments Incorporated
20110115537 - Circuit devices and methods for re-clocking an input signal: Embodiments include circuit devices and methods for re-clocking an input signal. In an embodiment, a circuit device includes a data storage element having a data input to receive a digital data stream having a first clock rate and including a clock input to receive a clock signal having a second... Agent: Silicon Laboratories, Inc.
20110115538 - High-speed latched comparator circuit: A latched comparator circuit. The latched comparator circuit comprises a first and a second output terminal (20a, 20b) for outputting a first and a second output voltage, respectively, of the latched comparator circuit (1). Furthermore, the latched comparator circuit comprises a cross-coupled pair of transistors (30a, 30b) operatively connected between... Agent: Zoran Corporation
20110115539 - Signal processing arrangement: A signal processing arrangement comprises a series of latches (XDL, L1, L2) arranged as a clocked delay line (CDL) having a data input and a data output that are coupled to each other so as to form an inverting loop. An enable circuit (ACDL) allows or prevents a latch (L2)... Agent: Nxp B.v.
20110115540 - Self-powered detection device with a non-volatile memory: The self-powered detection device comprises a Non-Volatile Memory (NVM) unit (52) formed at least by a NVM cell and a sensor which is activated by a physical or chemical action or phenomenon, this sensor forming an energy harvester that transforms energy from said physical or chemical action or phenomenon into... Agent: Em Microelectronic-marin Sa
20110115541 - Apparatuses and methods for a level shifter with reduced shoot-through current: A level shifting circuit with reduced shoot-through current includes an output circuit comprising high-voltage devices with a pull up circuit configured for pulling up a voltage on an output signal to a high voltage responsive to a high-side control signal. The output circuit may also include a pull down circuit... Agent: Integrated Device Technology, Inc.
20110115542 - Level shift circuit and switching power source apparatus: A level shift circuit includes a first resistor connected to a level shift power source, a first transistor having a drain connected to a second end of the first resistor and a source to the ground, a second resistor connected to the level shift power source, a second transistor having... Agent: Sanken Electric Co., Ltd.
20110115543 - Semiconductor device, method for controlling the same, and data processing system including semiconductor device: A semiconductor device includes a multiplexer and an output buffer. The multiplexer includes: n switches (n is an integer of 2 or greater) each including an input node receiving a different data signal and an output node coupled to an input node of the output buffer; and a plurality of... Agent: Elpida Memory, Inc.
20110115544 - Bootstrapped switch circuit: A bootstrapped switch circuit can include a switch transistor, having a drain configured as an input terminal to receive an input signal, and a voltage-controlled voltage source, configured to provide predetermined constant voltages between a gate and a source of the switch transistor in response to a control signal received... Agent: Analog Devices, Inc.
20110115545 - Semiconductor device: An object is to provide a semiconductor device that can realize a function of a thyristor without complication of the process. A semiconductor device including a memory circuit that stores a predetermined potential by reset operation and initialization operation is provided with a circuit that rewrite data in the memory... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110115546 - Semiconductor integrated circuit including circuit for driving electrostatic actuator, micro-electro-mechanical systems, and driving method of electrostatic actuator: A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed between the top electrode and the bottom electrode. The estimation circuit estimates the amount of a charge... Agent:
20110115547 - Pressure enabling device and method and electronic apparatus containing the same: A pressure enabling apparatus includes: a pressure sensor, a resistance wire and a pressure setting module, wherein a terminal of the resistance wire is connected to the pressure sensor and another terminal thereof is connected to an electronic apparatus. The pressure setting module is provided for receiving and converting a... Agent: Inventec Appliances (nanchang) Corporation
20110115548 - Self-powered event detection device: The self-powered detection device comprises at least a non-volatile memory cell (24) and a sensor (16) which is activated by a physical or chemical action or phenomenon, this sensor forming an energy harvester that transforms energy from said physical or chemical action or phenomenon into an electrical stimulus pulse, the... Agent: Em Microelectronic-marin Sa
20110115552 - Charge pump circuit: There is provided a charge pump circuit which can prevent EMI noise of a frequency component independent of an operation clock frequency from occurring at the time of a change from a disable state to an enable state. The charge pump circuit includes a detection signal synchronization circuit which outputs... Agent: Renesas Electronics Corporation
20110115549 - Charge pump for use with a synchronous load: A charge pump has circuitry and implements a method for monitoring a synchronous load by using a first voltage threshold below a target output voltage and a second voltage threshold above a target output voltage. An output terminal is coupled to the load. Charge is demanded by clocking the load.... Agent:
20110115551 - Charge pump utilizing external clock signal: A method of generating a pumping voltage in an integrated circuit includes receiving an external clock signal from outside of the integrated circuit. The frequency of the received external clock signal is changed according to one or more modulation ratios, resulting in one or more respective modulated external clock signal.... Agent: Macronix International Co., Ltd.
20110115550 - System and method for communicating between multiple voltage tiers: A system includes first, second, and third circuits and first and second capacitors. The first capacitor has a first power supply terminal coupled to positive power supply terminal, a second power supply terminal, and an input/output. The second capacitor has a first power supply terminal coupled the second power supply... Agent:
20110115553 - Soi cmos structure having programmable floating backplate: SOI CMOS structures having at least one programmable electrically floating backplate are provided. Each electrically floating backplate is individually programmable. Programming can be performed by injecting electrons into each conductive floating backplate. Erasure of the programming can be accomplished by tunneling the electrons out of the floating backplate. At least... Agent: International Business Machines Corporation
20110115555 - Semiconductor device: In an RF tag, a mask ROM or a flash memory is used for storing data such as an ID number. Although the mask ROM can be realized at a low price, rewriting is not possible. In addition, in the flash memory, although electric rewriting is possible, production cost increases.... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110115554 - System having multiple voltage tiers and method therefor: A system includes a first circuit, a first charge pump, a second circuit, and a second charge pump. The first circuit has a first power supply terminal coupled to a positive power supply terminal and a second power supply terminal. The first charge pump has an input coupled to positive... Agent:
20110115556 - Circuit devices and methods of providing a regulated power supply: In an embodiment, a circuit includes a regulated power supply terminal, a processing circuit coupled to the regulated power supply terminal, and a low frequency responsive circuit having a first transistor adapted to be coupled to a power source and having first circuitry configured to control current flow from the... Agent: Silicon Laboratories, Inc.05/12/2011 > 38 patent applications in 31 patent subcategories. archived by USPTO category
20110109346 - Apparatus and methodology for maximum power point tracking for a solar panel: Circuitry and methodology for tracking the maximum power point (MPP) of a solar panel is disclosed. The voltage and current generated by the solar panel are monitored and used to generate a pulse signal for charging a capacitor. The changes in the voltage and current generated by the solar panel... Agent: Intersil Americas Inc.
20110109347 - Self-powered comparator: Embodiments of the invention relate to an input-powered comparator. Embodiments of the invention also pertain to an active diode that includes an input-powered comparator and a switch. In a specific embodiment, the input-powered comparator only consumes power when an input source provides sufficiently high voltage. Embodiments of the active diode... Agent: University Of Florida Research Foundation, Inc.
20110109348 - Dynamic comparator with background offset calibration: A dynamic comparator with background offset calibration is provided. The dynamic comparator includes at least one input differential pair, a first back-to-back inverter, a second back-to-back inverter, and an integrator. The input differential pair includes two current branches, wherein one of the current branches has an input referred offset. The... Agent: Industrial Technology Research Institute
20110109349 - Waveform generation from an input data stream: An output signal is generated from a received input data stream representing a sequence of digital data values. For each group of successive data values in the sequence of data values, a respective waveform pattern is assigned in dependence of the data content of the respective group of successive data... Agent: Agilent Technologies, Inc.
20110109350 - Stable current source for system integration to display substrate: A technique to implement a stable and high impedance current sink or source onto a display substrate using a single device. The high output current source or sink circuit includes an input that receives a fixed reference current and provides the reference current to a node in the current source... Agent: Ignis Innovation Inc.
20110109351 - Semiconductor device and manufacturing method thereof: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110109352 - Summation circuit in dc-dc converter: An integrated circuit includes a saw-tooth generator including a saw tooth node configured to have a saw-tooth voltage generated thereon; and a first switch having a first end connected to the saw tooth node. The integrated circuit further includes a second switch coupled between an output node and an electrical... Agent: Stmicroelectronics (shenzhen) R&d Co., Ltd.
20110109354 - Automatic control of clock duty cycle: In general, this disclosure is directed to a duty cycle correction (DCC) circuit that adjusts a falling edge of a clock signal to achieve a desired duty cycle. In some examples, the DCC circuit may generate a pulse in response to a falling edge of an input clock signal, delay... Agent: Honeywell International Inc.
20110109353 - Digital pll circuit and method of controlling the same: According to one embodiment, a PLL circuit generates a first signal of 1/m times from a reference clock and a second signal of 1/n times from an output of an oscillator, obtains a quantized phase difference corresponding to a shift amount between the both signals, integrates the phase difference, predicts... Agent:
20110109355 - Semiconductor integrated circuit device: To generate a highly accurate SSC while reducing the circuit area of a clock generation circuit that generates a normal clock and an SSC. A clock signal output from a voltage controlled oscillator is frequency-divided by a frequency divider, and is output as a first frequency-divided clock to a selector.... Agent: Renesas Electronics Corporation
20110109356 - Aperture generating circuit for a multiplying delay-locked loop: A multiplying delay-locked loop (MDLL) is described. In the MDLL, a phase interpolator (PI) provides a correction signal to selection control logic by phase mixing two internal signals (which have different phases) from a sequence of delay elements in the MDLL. This correction signal compensates for a delay associated with... Agent: Sun Microsystems, Inc.
20110109358 - Control voltage tracking circuits, methods for recording a control voltage for a clock synchronization circuit and methods for setting a voltage controlled delay: Memories, clock synchronization circuits, clock synchronization controller circuits, and methods for setting a voltage controlled delay of a clock synchronization circuit and tracking and recording the control voltage are disclosed. For example, a clock synchronization controller provides an initial control voltage to the voltage controlled delay during initialization of the... Agent: Micron Technology, Inc.
20110109357 - Delay locked loop circuit and semiconductor device having the delay locked loop circuit: A delay locked loop (DLL) circuit is disclosed. The DLL circuit includes a delay circuit and a phase adjusting circuit. The phase adjusting circuit is configured to receive a clock signal output from the delay circuit, pass the clock signal through a N-divider and a replica path to create a... Agent:
20110109359 - Variable capacitance with delay lock loop: An integrated circuit includes a delay lock loop (DLL) circuit that generates incremental delay line signals and a delay line output signal based on a received clock signal. A pulse-width modulation (PWM) control module generates a PWM control signal. A variable capacitance circuit is controlled based on the delay line... Agent:
20110109360 - System and method for improved timing synchronization: Embodiments of a method and system for both open-loop and closed-loop timing synchronization are provided in which a master clock signal, and a plurality of signals that define greater periods of time, are distributed to a plurality of host devices. A frame-sync signal is used to define a “frame” consisting... Agent: Bae Systems Information And Electronic Systems Integration Inc.
20110109361 - Semiconductor device and information processing system: The semiconductor device includes an output driver and a characteristic switching circuit that switches characteristics of the output driver. The characteristic switching circuit mutually matches a rising time and a falling time of an output signal output from the output driver, when a power voltage supplied to a power line... Agent: Elpida Memory, Inc.
20110109362 - Circuit for controlling an enabling time of an internal control signal according to an operating frequency of a memory device and the method thereof: Provided is a circuit for controlling a data bus connecting a bitline sense amplifier to a data sense amplifier in accordance with a variation of an operating frequency of a memory device, being comprised of a pulse width adjusting circuit for varying a pulse width of an input signal in... Agent: Hynix Semiconductor Inc.
20110109363 - Power supply controller and method: A power supply controller and method for improving the transient response of the power supply controller. The power supply controller includes a pulse width modulation control module connected to a feedback network. The feedback network is composed of an amplifier having an inverting input terminal, a non-inverting input terminal, and... Agent:
20110109364 - Input circuit: Provided is an input circuit having hysteresis characteristics that is capable of operating in a wide range of power supply voltage conditions while suppressing power supply voltage dependence of a hysteresis voltage and a response speed. The input circuit is provided with: a circuit for obtaining a small hysteresis voltage... Agent:
20110109365 - Delay locked loop circuit: The disclosure relates to phase detectors. Charge up and charge down signals that are generated by a phase detector cause i) following detection of a first edge of a reference clock signal, switching on of a switching transistor of sink current; ii) following detection of an edge of a feedback... Agent: Mosaid Technologies Incorporated
20110109366 - Method and apparatus to limit circuit delay dependence on voltage for single phase transition: A delay circuit receives a data input having an input transition and that generates a data output having an output transition. The delay circuit is powered by a voltage source having a voltage. A first delay element is configured to generate a first data signal with a first edge that... Agent: International Business Machines Corporation
20110109367 - Multi-phase duty-cycle corrected clock signal generator and memory having same: Memories, multi-phase clock signal generators, and methods for generating multi-phase duty cycle corrected clock signals are disclosed. For example, one such clock signal generator includes a delay-locked loop having a first multi-tap adjustable delay line configured to delay a reference signal to provide a plurality of clock signals having different... Agent: Micron Technology, Inc.
20110109368 - Sensor connection circuit: A circuit for converting the state of a sensor into a signal interpretable by an electronic circuit, including: a comparator of the voltage level of an input terminal with respect to a reference level, the sensor being intended to be connected between a terminal of application of a first power... Agent: Stmicroelectronics (tours) Sas
20110109370 - Level converter: A level converter for providing an output signal at a circuit output based on an input signal includes an output coupling circuit formed to provide an output signal based on a first partial output signal and a second partial output signal, a driver circuit formed to provide the second partial... Agent: Infineon Technologies Ag
20110109369 - Low voltage input level shifter circuit and method for utilizing same: According to one embodiment, a level shifter circuit operable with a low voltage input comprises first and second pull-down switches configured to receive the low voltage input as respective non-inverted and inverted control voltages, first and second pull-up switches coupled between the respective first and second pull-down switches and an... Agent: Broadcom Corporation
20110109371 - Energy-saving circuit for a peripheral device, peripheral device, switching device and method of operation: An energy-saving circuit applies to a peripheral device for connection to a data bus of a host system. The energy-saving circuit includes a monitoring circuit for monitoring a communication via the data bus, a holding circuit for holding a connection state of the peripheral device, at least one switching element... Agent: Fujitsu Technology Solutions Intellectual Property Gmbh
20110109372 - Semiconductor device with thermal fault detection: A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the... Agent:
20110109373 - Temperature coefficient modulating circuit and temperature compensation circuit: In the conventional temperature compensation circuit, the thermal resistor is used to perform the temperature compensation, but the provided compensation range is limited due to the temperature coefficient of the thermal resistor. The embodiment of the invention provides a temperature coefficient modulating circuit capable of amplifying the temperature coefficient of... Agent: Green Solution Technology Co., Ltd.
20110109374 - Dying gasp charge controller: In many applications, “dying gasp” periods following power down are used. Conventional circuits supply energy for the “dying gasp” periods generally by use of large external capacitors that are bulky and expensive. Here, a dying gasp charge controller is employed that allows for the use of smaller capacitors at higher... Agent: Texas Instruments Incorporated
20110109375 - Charge pump apparatus and charge pumping method: A charge pumping method includes: generating a first boosted voltage by boosting an input voltage by a boosting mode of a first multiplier; changing the level of a voltage charged in at least one capacitor provided in the inside of a charge pump circuit, in preparation for a change in... Agent: Magnachip Semiconductor, Ltd.
20110109376 - Circuits and methods for controlling a charge pump system: A circuit includes a charge pump and a feedback circuit. The charge pump coupled to a switch provides a control signal to the switch. The feedback circuit coupled to the charge pump receives the control signal and adjusts an operating frequency of the charge pump based upon the control voltage.... Agent:
20110109377 - Semiconductor integrated circuit: A circuit block operates while receiving a clock from an external circuit. A load balance circuit is connected to a shared power supply terminal together with the circuit block, and provides predetermined power consumption. A clock detection unit detects input of the clock from an external circuit. When the clock... Agent: Advantest Corporation
20110109378 - Method and device for supplying power to a microelectronic chip: A method and a device for supplying power to one or more microelectronic chips. The method comprises the steps of reading a process characteristic parameter associated with the chip from a non-volatile storage, wherein the process characteristic parameter represents a manufacturing process characteristics of the chip; determining a minimal voltage... Agent: International Business Machines Corporation
20110109379 - Differential transmission circuit: A differential transmission circuit comprises a sending unit that generates a pair of differential signals from an input signal, and sends the differential signals; a receiver that receives the differential signals sent by the sending unit; and a transmission path that transmits the differential signals from the sending unit to... Agent: Canon Kabushiki Kaisha
20110109380 - Active analog filter having a mos capacitor device with improved linearity: An active analog filter (700, 1000) having a MOS capacitor device (730, 1030) with improved linearity is proposed. In an exemplary embodiment, dc bias voltage sources (755, 745) alter the capacitance of MOS varactors (740, 750) connected in anti parallel so that the total capacitance of the MOS capacitor device... Agent: Qualcomm Incorporated
20110109381 - Integrated circuit die stacks with rotationally symmetric vias: An integrated circuit die stack including a first integrated circuit die mounted upon a substrate, the first die including pass-through vias (‘PTVs’) composed of conductive pathways through the first die with no connection to any circuitry on the first die; and a second integrated circuit die, identical to the first... Agent: International Business Machines Corporation
20110109382 - Semiconductor apparatus: A semiconductor apparatus having a plurality of semiconductor chips is configured in such a manner that the plurality of semiconductor chips share one or more source voltages generated in one of the plurality of semiconductor chips.... Agent: Hynix Semiconductor Inc.
20110109383 - Mems varactors: MEMS varactors capable of handling large signals and/or achieving a high capacitance tuning range are described. In an exemplary design, a MEMS varactor includes (i) a first bottom plate electrically coupled to a first terminal receiving an input signal, (ii) a second bottom plate electrically coupled to a second terminal... Agent: Qualcomm Incorporated05/05/2011 > 58 patent applications in 40 patent subcategories. archived by USPTO category
20110102020 - Balanced phase detector: Methods and apparatus are disclosed, such as those involving a digital phase detector that includes a phase detection circuit configured to detect which one of two clock signals leads the other. One such phase detector includes a balancer configured to prepare the phase detection circuit for a phase detection. The... Agent: Micron Technology Inc.
20110102021 - Differential hysteresis comparator circuits and methods: A comparator circuit for providing hysteresis comprises first and second differentially coupled transistors. The first of the differentially coupled transistors provides drain current to first and second load transistors. The second of the differentially coupled transistors provides drain current to third and fourth load transistors. In one example embodiment, the... Agent:
20110102022 - Input unit of portable terminal, portable terminal using the same, and operation method thereof: A portable terminal includes: a key row including a reference resistor, switches separately connected to the reference resistor, and a plurality of resistors connected to the switches, respectively; a reference voltage unit connected to the reference resistor and providing a reference voltage; and a first comparator and a second comparator... Agent: Samsung Electronics Co., Ltd.
20110102023 - Current-to-voltage converters with dynamic feedback: An apparatus for modifying an output signal indicative of a downhole parameter that may include a carrier conveyable in a wellbore; a negative error compensator; and an output signal device. The negative error compensator may be configured to modify the output of the device to increase or decrease a characteristic... Agent: Baker Hughes Incorporated
20110102024 - Data output circuit: The data output circuit includes a pull-up signal generator, a pull-down signal generator and a driver. The pull-up signal generator is configured to generate a pull-up signal that is driven to a first level state when a pre-pull-up signal is activated and driven to a second level state after a... Agent: Hynix Semiconductor Inc.
20110102025 - Data output circuit: The data output circuit includes a first decoder, a second decoder, a first selective output circuit, a second selective output circuit, and an output driver. The first decoder is configured to generate a pull-up selection signal by decoding a pull-up code. The second decoder is configured to generate a pull-down... Agent: Hynix Semiconductor Inc.
20110102026 - Antenna driving device: The antenna driving device of the present invention is composed of a trapezoidal-wave signal generating circuit for generating a trapezoidal-wave signal from a reculangular-wave signal having a predetermined frequency; and a trapezoidal-wave signal amplifying circuit for amplifying the trapezoidal-wave signal and feeding the amplified signal to an antenna load.... Agent: Rohm Co., Ltd.
20110102027 - Semiconductor integrated device and control method thereof: Provided is a semiconductor integrated device that selects one or more of a plurality of functional blocks and resets the selected functional block, and a control method of the semiconductor integrated device. The semiconductor integrated circuit includes a functional block that is reset when a clock signal and a reset... Agent: Renesas Electronics Corporation
20110102028 - Multiphase clock generation circuit: The multiphase clock generation circuit includes a variable slew rate circuit and a phase interpolation circuit. In the variable slew rate circuit, the slew rate varies according to a first control signal. Two reference clocks having a phase difference of 90° from each other are supplied to the phase interpolation... Agent:
20110102029 - Delay lines, methods for delaying a signal, and delay lock loops: Locked loops, delay lines and methods for delaying signals are disclosed, such as a delay line and delay lock loop using the delay line includes a series of delay stages, each of which consists of a single inverting delay device. The inputs and outputs of a selected stage are applied... Agent: Micron Technology, Inc.
20110102031 - Semiconductor device and operating method thereof: A semiconductor device includes a control voltage generating block configured to generate a control voltage corresponding to a phase difference between a reference clock signal and an internal clock signal, a control voltage restoring block configured to store the control voltage as a restoring voltage when entering into a low... Agent:
20110102030 - System and method for dynamically switching between low and high frequency reference clock to pll and minimizing pll output frequency changes: A circuit is provided for use with a clock signal having a plurality of clock pulses, each clock pulse having a rising edge and a falling edge. The circuit is operable to receive a reference signal and to output an output signal. The circuit includes an input divider portion, a... Agent:
20110102034 - Charge pump for pll/dll: A charge pump for use in a Phase Locked Loop/Delay Locked Loop minimizes static phase error through the use of an operational amplifier. The operational amplifier also mitigates the effects of low power supply voltage.... Agent: Mosaid Technologies Incorporated
20110102032 - Loop filter: A loop filter having a first node on which to receive an input signal to the loop filter, a second node on which to provide an output signal of the loop filter, and a cascade arrangement of at least a first circuit that generates a zero, a second circuit that... Agent: Stmicroelectronics Design & Application Gmbh
20110102033 - Low power clocking scheme for a pipelined adc: Delay locked loops or DLLs are oftentimes employed in pipelined analog-to-digital converters (ADCs). Conventional DLLs, though, can consume an excessive amount of power. Here, a DLL is provided with a modified charge pump that allows for reduced power consumption.... Agent: Texas Instruments Incorporated
20110102036 - Phase splitter using digital delay locked loops: A phase splitter uses digital delay locked loop (DLL) to receive complementary input clock signals to generate a plurality of output signals having different phase shifts. When the DLL is locked, the delay resolution of the phase splitter is equal to two delay stages of the DLL.... Agent: Round Rock Research, LLC
20110102035 - Semiconductor integrated circuit having delay locked loop circuit: A semiconductor integrated circuit is provided. The semiconductor integrated circuit includes: a delay locked loop (DLL) output block configured to delay an input clock signal by a predetermined time in response to a plurality of delay control signals and provide a DLL clock signal; a locking control block configured to... Agent: Hynix Semiconductor Inc.
20110102037 - Circuit for resetting system and delay circuit: A reset circuit and a delay circuit are provided. The delay circuit includes a first resistor module, a second resistor module, a switch module and a capacitor module. First terminals of the first and the second resistor modules are coupled respectively to a first voltage and a second voltage. The... Agent: Himax Technologies Limited
20110102039 - Apparatus and method for correcting duty cycle of clock signal: A clock correction circuit includes a delay locked loop (DLL) configured to delay an external clock signal and to generate an internal clock signal, a first duty cycle correction (DCC) unit configured to correct a duty cycle of the external clock signal in response to a first duty cycle code,... Agent:
20110102038 - Duty ratio control apparatus and duty ratio control method: There are provided a duty ratio control apparatus for altering a duty ratio of a clock signal to output an altered clock signal, including a first variable delay section that outputs a first delayed clock signal generated by delaying the clock signal by a predetermined first delay time, and a... Agent: Advantest Corporation
20110102040 - Semiconductor device: A semiconductor device includes: a voltage-control-type clock generation circuit having a plurality of stages of first delay elements and whose oscillation frequency is controlled according to a control voltage applied to the first delay elements; a delay circuit having a plurality of stages of second delay elements connected serially; and... Agent: Kabushiki Kaisha Toshiba
20110102041 - Method and device for generating pwm signals: A PWM signal for driving power transistors of a half-bridge of a converter is generated with the aid of a digital circuit, in which an internal reference value is compared to the counter content of a counting ramp. In this context, a logic state of the PWM signal depends upon... Agent:
20110102042 - Apparatus and method for hardening latches in soi cmos devices: A method of determining one or more transistors within a particular circuit to be respectively replaced with a hardened transistor includes: identifying, as not requiring hardening, one or more transistors; identifying, as candidates for hardening, each transistor in the circuit not previously identified as not requiring hardening; and employing the... Agent: International Business Machines Corporation
20110102043 - Reducing power-supply-induced jitter in a clock-distribution circuit: A system for compensating for power-supply-induced jitter (PSIJ) in a chain of clock buffers within an integrated circuit is described. During operation, the system couples a first supply voltage from a first voltage source to a supply node of each clock buffer in a first chain of clock buffers. Note... Agent: Rambus Inc.
20110102044 - Clocking architecture in stacked and bonded dice: A method and apparatus for distributing clock signals throughout an integrated circuit is provided. An embodiment comprises a distribution die which contains either the clock signal distribution network by itself, or the clock signal distribution network in tandem with a clock signal generator. The distribution die is electrically connected through... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110102048 - Bias voltage generation to protect input/output (io) circuits during a failsafe operation and a tolerant operation: A method includes controllably generating a first bias voltage from a supply voltage to be within an upper tolerable limit of an operating voltage of one or more constituent active circuit element(s) of an Input/Output (IO) core device of an integrated circuit (IC) to be interfaced with an IO pad,... Agent: Lsi Corporation
20110102045 - Interfacing between differing voltage level requirements in an integrated circuit system: A method includes controllably generating a first bias voltage from a supply voltage to be within an upper tolerable limit of an operating voltage of an IO receiver, and controllably generating a second bias voltage from an external voltage supplied through an IO pad to be within the upper tolerable... Agent:
20110102046 - Interfacing between differing voltage level requirements in an integrated circuit system: A method includes controllably generating a first bias voltage from a supply voltage to be within an upper tolerable limit of an operating voltage of one or more constituent active circuit element(s) of an Input/Output (IO) core device of an integrated circuit (IC) to be interfaced with an IO pad,... Agent:
20110102047 - Radio frequency (rf) power detector suitable for use in automatic gain control (agc): In one form, a power detector includes first and third transistors of a first conductivity type, and second and fourth transistors of a second conductivity type. A control electrode of the first transistor receives a first bias voltage plus a positive component of a differential input signal. The second transistor... Agent: Silicon Laboratories, Inc.
20110102049 - Circuit for generating a reference voltage with compensation of the offset voltage: An embodiment of a circuit includes first and second branches, an amplifier, a compensation circuit, and a bias unit. The first and second branches are respectively operable to generate first and second currents. The amplifier has a first amplifier input node coupled to the first branch, a second amplifier input... Agent: Stmicroelectronics S.r.l.
20110102050 - Attenuator: An attenuator includes a T-type two terminal pair network including first and second terminals, first, second and third circuits, wherein the first terminal receives an input signal to be attenuated, wherein the first circuit is connected between the first and second terminals, wherein the second circuit is connected between the... Agent: Renesas Electronics Corporation
20110102051 - Harmonic rejection mixer: A harmonic rejection mixer includes a differential in-phase signal path and a differential quadrature signal path, a shared differential transconductor for generating a shared transconductor output signal from a mixer input signal, a first selective mixing circuit disposed in the differential quadrature signal path and coupled to the shared differential... Agent: Stmicroelectronics Design And Application Gmbh
20110102052 - Hybrid switch circuit: A hybrid switch circuit includes a hybrid switch that couples an input conductor connected to an AC power supply to an output conductor connected to a load. The hybrid switch includes a power semiconductor in parallel with an electromagnetic relay. A control circuit turns on the hybrid switch by turning... Agent: Electronic Systems Protection, Inc.
20110102053 - Method and soc for implementing time division multiplex of pin: A method for using pins in different mode during different time is provided. The method is able to make at least one pin of a SOC be used in a first interface mode or a second interface mode during different time; wherein the SOC comprises a first interface circuit, a... Agent: Actions Semiconductor Co., Ltd.
20110102054 - Power semiconductor module and method for operating a power semiconductor module: A power semiconductor module includes a normally on, controllable first power semiconductor switch including at least one first power semiconductor chip, and a normally off, controllable second power semiconductor switch including at least one second power semiconductor chip. The load paths of the first power semiconductor switch and of the... Agent: Infineon Technologies Ag
20110102055 - Low-side driver high-voltage transient protection circuit: A low-side driver circuit includes a low-side driver integrated circuit and a controllable switch. The low-side driver integrated circuit is responsive to an on-off command input signal to selectively operate in an ON mode and an OFF mode. The controllable switch is responsive to the on-off command signal to selectively... Agent: Honeywell International Inc.
20110102056 - Method for switching without any interruption between winding taps on a tap-changing transformer: The invention relates to a method for switching without any interruption between two winding taps (tap n, tap n+1) of a tap-changing transformer, wherein each of the two winding taps is connected to the common load output line via in each case one mechanical switch (Ds) and a series circuit,... Agent:
20110102058 - Circuit for generating a reference voltage: An embodiment of a bandgap voltage reference circuit for generating a bandgap voltage reference. Said embodiment comprises a current generator controlled by a first driving voltage for generating a first current depending on the driving voltage, and a first reference circuit element coupled to the controlled current generator for receiving... Agent: Stmicroelectronics S.r.l.
20110102059 - Location-related adjustment of the operatng temperature distribution or power distribution of a semiconductor power component, and component for carrying out said method: Described is a method for adjusting an operating temperature of MOS power components composed of a plurality of identical individual cells and a component for carrying out the method. As a characteristic feature, the gate electrode network (4) of the active chip region is subdivided into several gate electrode network... Agent: X-fab Semiconductor Foundries Ag
20110102057 - Temperature and process driven reference: A reference voltage generation circuit for generating a reference voltage that can adaptively depend on temperature and process includes: a comparator, having a process, temperature and voltage (PVT) insensitive reference as a first input, and a feedback of the output as a second input, for generating a voltage reference output;... Agent:
20110102060 - Resistive sheet, pressure-sensitive switch, and input device: A resistive sheet includes a flexible cover sheet, a wiring part provided on the bottom face of the cover sheet, and ring, circular-arc, or spiral resistive layer connected to the wiring part. This resistive layer has uneven bottom face. The resistive sheet also includes a spacer layer whose bottom face... Agent:
20110102061 - Touch panel sensing circuit: A touch panel sensing circuit senses a voltage variation of a coupling capacitor formed between a first directional signal line and a second directional signal line separated from the first directional signal line by a dielectric when an object approaches. The sensing circuit eliminates the parasitic capacitance effect on the... Agent: Orise Technology Co., Ltd.
20110102062 - Multi-supply voltage compatible i/o ring: Systems and methods for achieving multiple supply voltage compatibility of an input/output (I/O) ring of an integrated circuit (IC) chip. The IC chip includes a core surrounded by the I/O ring which includes a voltage detector circuit. An I/O supply voltage of the IC chip is sensed by the voltage... Agent: Stmicroelectronics Pvt. Ltd.
20110102063 - Current-controlled resistor: A current-controlled resistor comprises a first input terminal configured to receive an input signal and a second input terminal configured to receive a current control signal. The resistor comprises a first stage configured to receive the current control signal; the first stage includes first and second PN diodes having first... Agent: Stmicroelectronics Design & Application Gmbh
20110102064 - Electronic age detection circuit: An aging detection circuit is disclosed. An aging detection circuit may include at least an inverter and a half-latch. During a power-up sequence, if an input voltage of the first inverter changes sufficiently to cause the output of the inverter to change states, the output of the half-latch may be... Agent:
20110102065 - Semiconductor apparatus and chip selection method thereof: A semiconductor apparatus having a plurality of stacked chips includes: a plurality of latch units, each of which is disposed in a corresponding one of the plurality of chips and is configured to latch a clock signal and a frequency-divided signal at mutually different points of time to generate an... Agent: Hynix Semiconductor Inc.
20110102066 - Semiconductor apparatus and chip selection method thereof: A semiconductor apparatus having a plurality of stacked chips includes: a through silicon via (TSV) configured to couple the plurality of chips together and configured to be coupled in series to a plurality of voltage drop units; a plurality of signal conversion units, each of which is configured to convert... Agent: Hynix Semiconductor Inc.
20110102067 - Fuse devices and methods of operating the same: A fuse device includes a fuse unit, which includes a cathode, an anode, and a fuse link coupling the cathode and the anode. A transistor includes at least a portion of the fuse unit to be used as an element of the transistor.... Agent:
20110102068 - Graphene device and method of using graphene device: An embodiment of a graphene device includes a layered structure, first and second electrodes, and a dopant island. The layered structure includes a conductive layer, an insulating layer, and a graphene layer. The electrodes are coupled to the graphene layer. The dopant island is coupled to an exposed surface of... Agent: The Regents Of The University Of California
20110102069 - Charge pump circuit and driving method thereof: A charge pump circuit includes an input end, a first reservoir capacitor, a second reservoir capacitor, two output ends, a charge pump unit and a charge module. The input end receives an input voltage, and the two output ends output a positive pumping voltage and a negative pumping voltage, respectively.... Agent:
20110102070 - Voltage pumping circuit: In a first pair of stacked PMOS devices comprising a first PMOS device and a second PMOS device, the first pumping circuit is coupled between a gate of the first PMOS device and a P pre-driver signal. In a second pair of stacked NMOS devices comprising a first NMOS device... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110102071 - Curvature-compensated band-gap voltage reference circuit: A band-gap reference voltage is developed by a phase-clocked band-gap circuit including a single PN junction through which first and second constant currents are alternately directed. A current proportional to absolute temperature is selectively added to one of the first and second constant currents to curvature-compensate the developed band-gap reference... Agent: Delphi Technologies, Inc.
20110102072 - Power management of an integrated circuit: An integrated circuit 2 includes logic circuitry 4 connected to virtual power rails 6, 8. These virtual power rails are connected via power control transistors 10, 16 to a power supply 14. A power controller 20 produces control signals which determines a number of the power control transistors 10, 16... Agent: Arm Limited
20110102073 - Semiconductor device, system with semiconductor device, and calibration method: Variations of the impedance of each output driver of a semiconductor device can be reduced, and high-speed calibration is achieved. A calibration circuit including a replica circuit having the same configuration as each pull-up circuit or pull-down circuit included in an output driver of a semiconductor device is provided within... Agent: Elpida Memory, Inc.
20110102075 - Power distribution system for integrated circuits: A power distribution system for integrated circuits includes methods to damp resonance between a bypass capacitor network and a power/ground cavity of the printed circuit board that (a) does not require excessive quantities of bypass/damping components or (b) does not require high plane cavity capacitance or in the alternative can... Agent: Teraspeed Consulting Group LLC
20110102074 - Programmable rf array: The present disclosure relates to radio frequency integrated circuits. More particularly, systems, devices and methods related to field programmable, software implemented, radio frequency integrated circuits are disclosed. In accordance with an exemplary embodiment, a field programmable, software implemented, radio frequency integrated circuit may comprise a high frequency IF embodiment. An... Agent: Viasat, Inc.
20110102076 - Semiconductor integrated circuit: A semiconductor integrated circuit including: a circuit block having an internal voltage line; an annular rail line forming a closed annular line around the circuit block and supplied with one of a power supply voltage and a reference voltage; and a plurality of switch blocks arranged around the circuit block... Agent: Sony Corporation
20110102077 - Semiconductor device with feedback control: An electronic element (39′, 39, 40) having feedback control is provided by placing an inductive interposer (42) between the output connection or bus (382) and the input connection or bus (381), wherein the inductive interposer (42) forms part of a closed circuit (47) with the inductive interposer (42) substantially parallel... Agent: Freescale Semiconductor, Inc.Previous industry: Electronic digital logic circuitry
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