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Minoru Ikarashi patents

Recent patents with Minoru Ikarashi listed as an inventor - additional entries may be under other spellings.


Minoru Ikarashi - Related organizations: Sony Corporation patents

Storage device and storage unit

03/17/16 - 20160079526 - A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150
Inventors: Hiroaki Sei, Kazuhiro Ohba, Takeyuki Sone, Minoru Ikarashi

Memory device and method of manufacturing memory device

11/12/15 - 20150325628 - Provided is a storage apparatus provided with a plurality of storage elements having storage layers comprising a plurality of layers and electrodes, one layer among the plurality of layers being extended in a first direction and being shared by the plurality of storage elements disposed in the first direction, the
Inventors: Seiji Nonoguchi, Takeyuki Sone, Minoru Ikarashi, Hiroaki Narisawa, Katsuhisa Aratani

Storage device and storage unit

12/19/13 - 20130334489 - A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150
Inventors: Hiroaki Sei, Kazuhiro Ohba, Takeyuki Sone, Minoru Ikarashi

Storage device and storage unit

10/03/13 - 20130256622 - A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer includes a chalcogen element, oxygen, and one or more transition metal elements
Inventors: Hiroaki Sei, Kazuhiro Ohba, Takeyuki Sone, Minoru Ikarashi

Memory device

02/16/12 - 20120037873 - A memory device includes: first and second electrodes; a semiconductor layer of a first conduction type provided on the first electrode side; a solid electrolyte layer containing movable ions and provided on the second electrode side; and an amorphous semiconductor layer of a second conduction type which is provided between
Inventors: Minoru Ikarashi, Katsuhisa Aratani

Memory device

02/16/12 - 20120037872 - A memory device includes: an amorphous semiconductor layer of a first conduction type; a solid electrolyte layer containing movable ions and provided in contact with a part of one of faces of the amorphous semiconductor layer; a first electrode electrically connected to the amorphous semiconductor layer via the solid electrolyte
Inventors: Minoru Ikarashi, Katsuhisa Aratani

Recording method for magnetic memory device

02/10/11 - 20110032744 - [Solving Means] A recording method for a magnetic memory device includes applying, when recording one piece of information, one or more main pulses and one or more sub-pulses in the same direction and applying the one or more sub-pulses after the one or more main pulses, the one or more
Inventors: Hiroyuki Ohmori, Masanori Hosomi, Minoru Ikarashi, Tetsuya Yamamoto, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano

Memory and write control method

12/30/10 - 20100328998 - A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data
Inventors: Yutaka Higo, Masanori Hosomi, Minoru Ikarashi, Hiroshi Kano, Shinichiro Kusunoki, Hiroyuki Ohmori, Yuki Oishi, Kazutaka Yamane, Tetsuya Yamamoto, Kazuhiro Bessho

Recording method of nonvolatile memory and nonvolatile memory

12/30/10 - 20100328993 - A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a
Inventors: Hiroyuki Ohmori, Tetsuya Yamamoto, Masanori Hosomi, Yutaka Higo, Kazutaka Yamane, Kazuhiro Bessho, Hiroshi Kano, Minoru Ikarashi, Yuki Oishi, Shinichiro Kusunoki

Memory

12/30/10 - 20100328992 - A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free
Inventors: Hiroshi Kano, Yutaka Higo, Tetsuya Yamamoto, Hiroyuki Ohmori, Masanori Hosomi, Shinichiro Kusunoki, Yuki Oishi, Kazutaka Yamane, Kazuhiro Bessho, Minoru Ikarashi

Memory device and memory

12/16/10 - 20100314673 - A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on
Inventors: Kazutaka Yamane, Masanori Hosomi, Hiroshi Kano, Hiroyuki Ohmori, Minoru Ikarashi, Tetsuya Yamamoto, Kazuhiro Bessho, Yutaka Higo, Yuki Oishi, Shinichiro Kusunoki

Storage element and memory

08/12/10 - 20100200939 - A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer
Inventors: Masanori Hosomi, Hiroyuki Ohmori, Minoru Ikarashi, Tetsuya Yamamoto, Yutaka Higo, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano

Resistance variable memory device

06/03/10 - 20100135069 - A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset
Inventors: Minoru Ikarashi, Yutaka Higo, Masanori Hosomi, Hiroshi Kano, Shinichiro Kusunoki, Hiroyuki Ohmori, Yuki Oishi, Tetsuya Yamamoto, Kazutaka Yamane

Resistance-change memory device

06/03/10 - 20100135068 - A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing
Inventors: Minoru Ikarashi, Yutaka Higo, Masanori Hosomi, Hiroshi Kano, Shinichiro Kusunoki, Hiroyuki Ohmori, Yuki Oishi, Tetsuya Yamamoto, Kazutaka Yamane


### Minoru Ikarashi patent invention listings

The bibliographic references displayed about Minoru Ikarashi's patents are for a recent sample of Minoru Ikarashi's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Minoru Ikarashi filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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