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Ming-Dou Ker patents

Recent bibliographic sampling of Ming-Dou Ker patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title):

07/21/16 - 20160209463 - Test method for eliminating electrostatic charges
In a test method for eliminating electrostatic charges, at least one test process is firstly performed by a test equipment comprising a tester and a platform, and electrostatic charges are generated on the test equipment in the test process. In the test process, the tester contacts and tests at least...
Inventors: Ming-dou Ker, Che-hao Chuang (Amazing Microelectronic Corp.)

07/21/16 - 20160209461 - Test device for eliminating electrostatic charges
In a test device for eliminating electrostatic charges, an elimination integrated circuit (IC) has a plurality of first pins, a second pin and a third pin. The first pins are respectively connected with a plurality of fourth pins of at least one tested integrated circuit (IC), and electrostatic charges are...
Inventors: Ming-dou Ker, Che-hao Chuang (Amazing Microelectronic Corp.)

07/21/16 - 20160206894 - Defibrillator device
A defibrillator device is provided. The defibrillator device includes a first electrode, a second electrode, a readout module, a USB interface, a voltage converter and a stimulation module. When the first and second electrodes contact the chest of a patient, the readout module obtains a physiologic rhythm signal of the...
Inventors: Ming-ying Kuo, Ming-dou Ker (Winbond Electronics Corp.)

11/05/15 - 20150318692 - Active guard ring structure to improve latch-up immunity
An active guard ring structure is provided, which is applicable to improving latch-up immunity during the latch-up current test (I-test). The proposed active guard ring structure comprises an I/O circuit and an active protection circuit, wherein the I/O circuit receives a trigger current via an input pad and generates a...
Inventors: Ming-dou Ker, Hui-wen Tsai (National Chiao Tung University)

06/18/15 - 20150171031 - Three-dimension (3d) integrated circuit (ic) package
A three-dimension (3D) integrated circuit (IC) package is disclosed. The 3D IC package has a package substrate having a surface. At least one integrated circuit (IC) chip with or without suppressing a transient voltage and at least one transient voltage suppressor (TVS) chip are arranged on the surface of the...
Inventors: Ming-dou Ker, Che-hao Chuang (Amazing Microelectronic Corp.)

03/06/14 - 20140063663 - Power-rail electro-static discharge (esd) clamp circuit
A power-rail ESD clamp circuit with a silicon controlled rectifier and a control module is provided. The silicon controlled rectifier is connected to a high voltage level and a low voltage level for bearing a current flow. The control module is connected to the silicon controlled rectifier in parallel, and...
Inventors: Federico Agustin Altolaguirre, Ming-dou Ker, Ryan Hsin-chin Jiang (Amazing Microelectronic Corp)

11/28/13 - 20130314826 - Electrostatic discharge protection circuit
An electrostatic discharge (ESD) protection circuit, suitable for an input stage circuit including a first N channel metal oxide semiconductor (NMOS) transistor, is provided. The ESD protection circuit includes an P channel metal oxide semiconductor (PMOS) transistor and an impedance device, in which the PMOS transistor has a source coupled...
Inventors: Ming-dou Ker, Chun-yu Lin, Chang-tzu Wang (United Microelectronics Corporation)

08/29/13 - 20130221834 - Planar mirco-tube discharger structure and method for fabricating the same
The present invention discloses a semiconductor-based planar micro-tube discharger structure and a method for fabricating the same. The method comprises steps: forming on a substrate two patterned electrodes separated by a gap and at least one separating block arranged in the gap; forming an insulating layer over the patterned electrodes...
Inventors: Tung-yang Chen, Ming-dou Ker, Ryan Hsin-chin Jiang

07/04/13 - 20130172958 - Current stimulator
The disclosure relates to a current stimulator, which comprises a high voltage output module, a voltage control module and a charge pump module. The high voltage output module includes a plurality of stacked transistors, and receives an input control signal able to turn on/off the current stimulator and a first...
Inventors: Chun-yu Lin, Yi-ju Li, Ming-dou Ker

04/18/13 - 20130094113 - Initial-on scr device for on-chip esd protection
A semiconductor device for electrostatic discharge (ESD) protection comprises a silicon controlled rectifier (SCR) including a semiconductor substrate, a first well formed in the substrate, a second well formed in the substrate, a first p-type region formed in the first well to serve as an anode, and a first n-type...
Inventors: Ming-dou Ker, Shih-hung Chen, Kun-hsien Lin (Industrial Technology Research Institute)

04/11/13 - 20130088801 - Electrostatic discharge protection apparatus
An electrostatic discharge (ESD) protection apparatus includes at least one first transistor and at least one second transistor. The first transistor includes a control terminal, a first terminal, a second terminal, and a bulk. The control terminal and the second terminal of the first transistor are coupled to each other....
Inventors: Fu-yi Tsai, Chia-ku Tsai, Yan-hua Peng, Ming-dou Ker (Faraday Technology Corp.)

02/21/13 - 20130044397 - Esd protection circuit
ESD protection circuit including a resistor and at least one protection transistor; the resistor coupled between an I/O signal node and an internal node of internal circuit, the protection transistors serially coupled between the internal node and a voltage node with each protection transistor comprising a gate and a drain...
Inventors: Fu-yi Tsai, Yan-hua Peng, Chia-ku Tsai, Ming-dou Ker (Faraday Technology Corporation)

11/15/12 - 20120290046 - Load-adaptive bioelectric current stimulator
The disclosure relates to a load-adaptive bioelectrical current stimulator, which comprises a current output module, an adaptation module and a control module. The current output module generates a stimulus current to an electrode. The adaptation module detects the electrical status of the stimulus current passing through the electrode and generates...
Inventors: Ming-dou Ker, Wei-ling Chen, Chun-yu Lin

06/14/12 - 20120146151 - Electrostatic discharge protection device
An electrostatic discharge (ESD) protection device including a substrate, a first doped region, a second doped region, and a third doped region, a gate and a plurality of contacts is disclosed. The substrate includes a first conductive type. The first doped region is formed in the substrate and includes a...
Inventors: Yeh-jen Huang, Yeh-ning Jou, Ming-dou Ker, Wen-yi Chen, Chia-wei Hung, Hwa-chyi Chiou

02/23/12 - 20120044605 - Esd protection for high-voltage-tolerance open-drain output pad
A high-voltage NMOS transistor for ESD protection is coupled between a high-voltage I/O pad and a low-voltage terminal, and has a parasitic component between its source and drain. A trigger has an input coupled to the high-voltage I/O pad and an output coupled to the parasitic component. When the voltage...
Inventors: Wu-tsung Hsihe, Ming-chun Chou, Ming-dou Ker (Elan Microelectronics Corporation)

10/20/11 - 20110255200 - Electrostatic discharge circuit for integrated circuit with multiple power domain
An ESD protection circuit with multiple domains, which comprises: an ESD protection device, coupled between a first power supplying line and a first ground line; a first internal circuit, having a first terminal coupled to the first power supplying line; a first switch, coupled between a second terminal of the...
Inventors: Fu-yi Tsai, Ming-dou Ker

08/18/11 - 20110198678 - Electrostatic discharge protection circuit
An electrostatic discharge (ESD) protection circuit, suitable for an input stage circuit including a first N channel metal oxide semiconductor (NMOS) transistor, is provided. The ESD protection circuit includes an P channel metal oxide semiconductor (PMOS) transistor and an impedance device, in which the PMOS transistor has a source coupled...
Inventors: Ming-dou Ker, Chun-yu Lin, Chang-tzu Wang (National Chiao Tung University)

06/23/11 - 20110149449 - High-voltage-tolerant esd clamp circuit with low leakage current fabricated by low-voltage cmos process
An electrostatic discharge (ESD) clamp circuit is provided, which includes a plurality of identical module circuits. The anode of the first module circuit is coupled to the cathode of the ESD clamp circuit. The anode of each of the other module circuits is coupled to the cathode of the previous...
Inventors: Chun-yu Lin, Ming-dou Ker, Fu-yi Tsai (Faraday Technology Corp.)

02/24/11 - 20110043953 - Esd protection circuit with merged triggering mechanism
An ESD protection circuit has a merged triggering mechanism. The ESD protection circuit comprises: an ESD detection circuit, for detecting an ESD voltage to generate a control signal; a first type ESD protection device, for outputting a first trigger current; a second type ESD protection device, for receiving a second...
Inventors: Ming-dou Ker, Chun-yu Lin, Fu-yi Tsai

06/10/10 - 20100140659 - Electrostatic discharge protection device and related circuit
An ESD protection device comprises a P-type substrate, a first substrate-triggered silicon controlled rectifiers (STSCR) disposed in the P-type substrate and a second STSCR disposed in the P-type substrate. The first STSCR comprises a first N-well, a first P-well, a first N+ diffusion region, a first P+ diffusion region, and...
Inventors: Ming-dou Ker, Yuan-wen Hsiao, Chang-tzu Wang

05/13/10 - 20100118454 - Esd protection circuitry with multi-finger scrs
Self-triggered Multi-finger SCRs used in ESD protection circuitry capable of turning on all SCR fingers of the multi-finger SCRs include a first source, a second source, N SCR units, (N−1) diodes, and N resistors. Each of the N SCR units includes a first node, a second node coupled to the...
Inventors: Ming-dou Ker, Chun-yu Lin, Chang-tzu Wang

07/16/09 - 20090179222 - Silicon controlled rectifier
A silicon controlled rectifier structure of polygonal layouts is provided. The polygonal first conductive type doped region is located in the middle of the polygonal second conductive type well. The first conductive type well shaped as a polygonal ring surrounds the second conductive type well and the second conductive type...
Inventors: Ming-dou Ker, Chun-yu Lin, Chang-tzu Wang (United Microelectronics Corp.)

Amazing Microelectronic Corp., Winbond Electronics Corp., National Chiao Tung University, Amazing Microelectronic Corp, United Microelectronics Corporation, Industrial Technology Research Institute, Faraday Technology Corp., Faraday Technology Corporation, Elan Microelectronics Corporation, United Microelectronics Corp.

(*May have duplicates - we are upgrading our archive.)

20090179222 - Silicon controlled rectifier
20090015974 - Esd detection circuit
20080297238 - Current source circuit
20080106835 - Active device array substrate having electrostatic discharge protection capability
20070205800 - High-voltage tolerant power-rail esd clamp circuit for mixed-voltage i/o interface


The bibliographic references displayed about Ming-Dou Ker's patents are for a recent sample of Ming-Dou Ker's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the website. If Ming-Dou Ker filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the website.


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