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Mineo Shimotsusa patents

Recent patents with Mineo Shimotsusa listed as an inventor - additional entries may be under other spellings.


Mineo Shimotsusa - Related organizations: Canon Kabushiki Kaisha patents

Solid-state imaging device and manufacturing method therefor

12/08/16 - 20160360139 - A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion
Inventors: Mineo Shimotsusa, Fumihiro Inui

Solid-state image pickup device

11/03/16 - 20160322415 - A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material,
Inventors: Mineo Shimotsusa

Solid-state imaging apparatus

09/29/16 - 20160284756 - The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and
Inventors: Takeshi Ichikawa, Mineo Shimotsusa, Genzo Momma

Semiconductor apparatus

09/29/16 - 20160284755 - A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different
Inventors: Mineo Shimotsusa

Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device

09/08/16 - 20160260763 - A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the
Inventors: Mineo Shimotsusa, Takeshi Ichikawa, Yasuhiro Sekine

Solid-state imaging apparatus and imaging system

08/04/16 - 20160227139 - Provided is a solid-state imaging apparatus, including pixels each including: a photoelectric conversion unit; a charge accumulation unit; a transistor including a control electrode; a waveguide; and a light-shielding portion. The waveguide includes an incident portion and an output portion, the light-shielding portion includes a first portion that covers the
Inventors: Mineo Shimotsusa, Masatsugu Itahashi, Masahiro Kobayashi, Kazunari Kawabata, Takeshi Ichikawa

Solid-state imaging device and imaging system

05/05/16 - 20160126285 - A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the
Inventors: Masahiro Kobayashi, Mineo Shimotsusa

Photoelectric conversion device and manufacturing method of the photoelectric conversion device

05/05/16 - 20160126278 - A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS transistor on a substrate including a semiconductor region defined by an insulator region for element isolation, a second process for masking a portion
Inventors: Mineo Shimotsusa, Masatsugu Itahashi, Yusuke Onuki, Nobuaki Kakinuma, Masato Fujita

Solid-state image sensor and method of manufacturing the same

03/03/16 - 20160064432 - A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having first and second surfaces, the forming the first isolation region including first implantation for implanting ions into the semiconductor layer through the first surface, forming charge
Inventors: Mineo Shimotsusa

Solid-state imaging apparatus and manufacturing method of solid-state imaging apparatus

02/25/16 - 20160056189 - The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated
Inventors: Masahiro Kobayashi, Mineo Shimotsusa

Solid-state image pickup device

01/07/16 - 20160005776 - Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.
Inventors: Mineo Shimotsusa

Photoelectric conversion apparatus and image pickup system having photoelectric conversion apparatus

12/31/15 - 20150377700 - A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the
Inventors: Mineo Shimotsusa, Koichiro Iwata

Method of manufacturing solid-state image sensor

12/17/15 - 20150364522 - A method of manufacturing a solid-state image sensor includes forming a first element isolation and a first active region of a pixel area, and a second isolation and a second active region of a peripheral circuit area, forming a gate electrode film covering the first element isolation, the first active
Inventors: Masatsugu Itahashi, Nobuaki Kakinuma, Mineo Shimotsusa, Masato Fujita, Yusuke Onuki, Takumi Ogino, Keita Torii

Method of manufacturing solid-state image sensor and solid-state image sensor

12/17/15 - 20150364517 - A method of manufacturing a solid-state image sensor including preparing a wafer including a pixel region where a photoelectric conversion element is provided, a peripheral circuit region where a gate electrode of a peripheral MOS transistor for constituting a peripheral circuit is provided, and a scribe region. The method includes
Inventors: Yusuke Onuki, Masatsugu Itahashi, Nobuaki Kakinuma, Mineo Shimotsusa, Masato Fujita, Takumi Ogino, Keita Torii

Photoelectric conversion apparatus, manufacturing method thereof, and image pickup system

12/17/15 - 20150364511 - A light guide portion includes a low refractive index portion and a high refractive index portion. The low refractive index portion has a refractive index equal to or lower than that of an insulating layer. The high refractive index portion has a refractive index higher than that of the low
Inventors: Hiroshi Echizen, Mineo Shimotsusa

Solid-state image sensor, method of manufacturing the same, and camera

11/12/15 - 20150325620 - A solid-state image sensor includes a pixel area and a peripheral circuit area. The pixel area includes a first MOS, and the peripheral circuit area includes a second MOS. A method includes forming a gate of the first MOS and a gate of the second MOS, forming a first insulating
Inventors: Masatsugu Itahashi, Seiichi Tamura, Nobuaki Kakinuma, Mineo Shimotsusa, Masato Fujita, Yusuke Onuki

Solid-state imaging apparatus and imaging system

09/17/15 - 20150264287 - Provided is a solid-state imaging apparatus, including pixels each including: a photoelectric conversion unit; a charge accumulation unit; a transistor including a control electrode; a waveguide; and a light-shielding portion. The waveguide includes an incident portion and an output portion, the light-shielding portion includes a first portion that covers the
Inventors: Mineo Shimotsusa, Masatsugu Itahashi, Masahiro Kobayashi, Kazunari Kawabata, Takeshi Ichikawa

Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device

08/06/15 - 20150221687 - A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the
Inventors: Mineo Shimotsusa, Takeshi Ichikawa, Yasuhiro Sekine

Solid-state image pickup device and method of making the same

07/30/15 - 20150214271 - A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite
Inventors: Mineo Shimotsusa, Masahiro Kobayashi

Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus

06/25/15 - 20150179700 - A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding
Inventors: Takehito Okabe, Kentarou Suzuki, Takashi Usui, Taro Kato, Mineo Shimotsusa, Shunsuke Takimoto

Solid-state imaging apparatus

06/25/15 - 20150179694 - The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and
Inventors: Takeshi Ichikawa, Mineo Shimotsusa, Genzo Momma

Solid-state imaging apparatus and manufacturing method of solid-state imaging apparatus

04/30/15 - 20150118782 - The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated
Inventors: Masahiro Kobayashi, Mineo Shimotsusa

Solid-state imaging device and manufacturing method therefor

03/19/15 - 20150076574 - A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion
Inventors: Mineo Shimotsusa, Fumihiro Inui

Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device

01/29/15 - 20150031162 - A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the
Inventors: Mineo Shimotsusa, Takeshi Ichikawa, Yasuhiro Sekine

Solid-state imaging apparatus and camera

11/20/14 - 20140340541 - A solid-state imaging apparatus which includes a semiconductor portion having a first face on the light incident side and a second face opposite to the first face, and an optical system arranged on the first face, comprising a first semiconductor region of a first conductivity type provided on the second
Inventors: Mineo Shimotsusa, Takehiko Soda

Photoelectric conversion apparatus

10/16/14 - 20140306309 - A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the
Inventors: Taro Kato, Mineo Shimotsusa, Hiroaki Sano, Takeshi Ichikawa, Yasuhiro Sekine, Mahito Shinohara, Genzo Momma

Solid-state image sensor and camera

08/07/14 - 20140217538 - A solid-state image sensor includes a structure having a semiconductor layer in which a plurality of photoelectric converters are arranged, a light blocking member arranged above a face of the structure and including a plurality of circular openings each corresponding to at least one of the photoelectric converters, a first
Inventors: Mineo Shimotsusa

Photoelectric conversion device and camera

06/19/14 - 20140168492 - A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and
Inventors: Hajime Ikeda, Yoshihisa Kabaya, Takanori Watanabe, Takeshi Ichikawa, Mineo Shimotsusa

Solid-state image sensor and method of manufacturing the same

06/12/14 - 20140160335 - A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having first and second surfaces, the forming the first isolation region including first implantation for implanting ions into the semiconductor layer through the first surface, forming charge
Inventors: Mineo Shimotsusa

Manufacturing method of semiconductor apparatus

04/03/14 - 20140094030 - A first wiring part has an intermediate layer made of a material different from materials of a first insulator layer and a first conductor layer and located between the first insulator layer and the first conductor layer. In a step of forming a first hole, which penetrates through a first
Inventors: Mineo Shimotsusa

Semiconductor apparatus

04/03/14 - 20140091414 - A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different
Inventors: Mineo Shimotsusa

Solid-state image sensor and method of manufacturing the same

08/29/13 - 20130222657 - A solid-state image sensor includes a semiconductor layer, a multilayer wiring layer, an opening which extends through the semiconductor layer, and reaches an electrically conductive layer in the multilayer wiring layer, an electrically conductive member arranged in the opening so as to be connected to the electrically conductive layer, and
Inventors: Mineo Shimotsusa

Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device

08/29/13 - 20130221473 - A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the
Inventors: Mineo Shimotsusa, Takeshi Ichikawa, Yasuhiro Sekine

Photoelectric conversion apparatus and image pickup system having photoelectric conversion apparatus

08/29/13 - 20130221197 - A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the
Inventors: Mineo Shimotsusa, Koichiro Iwata

Solid-state imaging device

05/09/13 - 20130112854 - The present invention provides a solid-state imaging device including a first substrate provided with a plurality of photoelectric conversion units thereon, and a second substrate provided with a reading circuit and parallel processing circuits thereon. The solid-state imaging device includes a DC voltage supply wiring configured to supply a DC
Inventors: Mineo Shimotsusa

Solid-state image pickup device

05/09/13 - 20130112849 - A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material,
Inventors: Mineo Shimotsusa

Solid-state imaging device and imaging system

05/02/13 - 20130107075 - A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the
Inventors: Masahiro Kobayashi, Mineo Shimotsusa

Solid-state imaging apparatus and manufacturing method of solid-state imaging apparatus

05/02/13 - 20130105924 - The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated
Inventors: Masahiro Kobayashi, Mineo Shimotsusa

Solid-state imaging device and manufacturing method therefor

04/25/13 - 20130099291 - A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion
Inventors: Mineo Shimotsusa, Fumihiro Inui

Solid-state imaging apparatus

04/18/13 - 20130092822 - The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and

Photoelectric conversion apparatus

08/09/12 - 20120200751 - A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the

Solid-state image pickup device and method of making the same

08/09/12 - 20120199927 - A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite

Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus

08/09/12 - 20120199893 - A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding

Photoelectric conversion element, and photoelectric conversion apparatus and imaging system using the same

08/09/12 - 20120199725 - A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending

Manufacturing method of a photoelectric conversion device

07/19/12 - 20120181582 - A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second

Photoelectric conversion device and camera

10/13/11 - 20110249163 - A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and

Image sensing device and camera

10/06/11 - 20110242388 - An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has

Photoelectric conversion apparatus and imaging system

09/29/11 - 20110234868 - A photoelectric conversion apparatus comprises multiple photoelectric conversion portions (51) disposed in a semiconductor substrate (5B) wherein each photoelectric conversion portion (51) includes: a P-type charge accumulating area (107) containing a first impurity; and an N-type well portion (102) that, along with the P-type charge accumulating area, configures a photodiode,

Manufacturing method of a photoelectric conversion device

07/14/11 - 20110171770 - A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second

Manufacturing method of a photoelectric conversion device

07/08/10 - 20100173444 - A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second

Photoelectric conversion device, imaging system, photoelectric conversion device designing method, and photoelectric conversion device manufacturing method

10/08/09 - 20090250778 - A photoelectric conversion device comprises a plurality of photoelectric conversion units, a first antireflection portion including a first insulation film which has a first refractive index and a second insulation film which has a second refractive index, and a second antireflection portion including an element isolation portion which includes an


### Mineo Shimotsusa patent invention listings

The bibliographic references displayed about Mineo Shimotsusa's patents are for a recent sample of Mineo Shimotsusa's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Mineo Shimotsusa filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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