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Method to obtain contamination free laser mirrors and passivation of these

USPTO Application #: 20050153470
Title: Method to obtain contamination free laser mirrors and passivation of these
Abstract: A method to obtain contamination free surfaces of a material chosen from the group comprising GaAs, GaAlAs, InGaAs, InGaAsP and InGaAs at crystal mirror facets for GaAs based laser cavities. The crystal mirrors facets are cleaved out exposed to an ambient atmosphere containing a material from the group comprising air, dry air, or dry nitrogen ambients. Any oxides and other foreign contaminants obtained during the ambient atmosphere exposure of the mirror facets are removed by dry etching in vacuum. Thereafter, a native nitride layer is grown on the mirror facets by treating them with nitrogen. (end of abstract)
Agent: Heller Ehrman LLP - Menlo Park, CA, US
Inventors: L. Karsten V. Lindstrom, N. Peter Blixt, Svante H. Soderholm, Anand Srinivasan, Carl-Fredrik Carlstorm
USPTO Applicaton #: 20050153470 - Class: 438029000 (USPTO)
Related Patent Categories: Semiconductor Device Manufacturing: Process, Making Device Or Circuit Emissive Of Nonelectrical Signal, Including Integrally Formed Optical Element (e.g., Reflective Layer, Luminescent Material, Contoured Surface, Etc.)

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Method of manufacturing group-iii nitride crystal
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Thin film formation method, thin film formation equipment, method of manufacturing organic electroluminescence device, organic electroluminescence device, and electronic apparatus
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Semiconductor device manufacturing: process

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