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08/16/07 - USPTO Class 250 |  22 views | #20070187623 | Prev - Next | About this Page  250 rss/xml feed  monitor keywords

Method, system and device for microscopic examination employing fib-prepared sample grasping element

USPTO Application #: 20070187623
Title: Method, system and device for microscopic examination employing fib-prepared sample grasping element
Abstract: A method including, in one embodiment, severing a sample at least partially from a substrate by cutting the substrate with a focused ion beam (FIB), capturing the substrate sample by activating a grasping element, and separating the captured sample from the substrate. The captured sample may be separated from the substrate and transported to an electron microscope for examination. (end of abstract)



Agent: Haynes And Boone, LLP - Dallas, TX, US
Inventors: George SKIDMORE, Matthew D. ELLIS, Aaron GEISBERGER, Kenneth BRAY, Kimberly TUCK, Robert Folaron
USPTO Applicaton #: 20070187623 - Class: 250492210 (USPTO)

Related Patent Categories: Radiant Energy, Irradiation Of Objects Or Material, Irradiation Of Semiconductor Devices, Ion Bombardment

Method, system and device for microscopic examination employing fib-prepared sample grasping element description/claims


The Patent Description & Claims data below is from USPTO Patent Application 20070187623, Method, system and device for microscopic examination employing fib-prepared sample grasping element.

Brief Patent Description - Full Patent Description - Patent Application Claims
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CROSS-REFERENCE/RELATED APPLICATIONS

[0001] This application is a Divisional of U.S. patent application Ser. No. 10/948,385, filed Sep. 23, 2004, which is related to and claims the benefit of the filing date of U.S. Provisional Application No. 60/505,026, filed Sep. 23, 2003, the disclosure of which is hereby incorporated in its entirety herein.

[0002] The present application is also related to and claims the benefit of the filing date of U.S. Provisional Application No. 60/546,840, filed Feb. 23, 2004, entitled "AUTOMATED AND SEMI-AUTOMATED PROBING IN A CHARGED PARTICLE BEAM DEVICE," by Baur, et al, the disclosure of which is hereby incorporated in its entirety herein.

[0003] The present application is also related to: (1) PCT Application Number PCT/US03/16695 entitled "MANIPULATION SYSTEM FOR MANIPULATING A SAMPLE UNDER STUDY WITH A MICROSCOPE" by Dyer; and (2) U.S. patent application Ser. No. 10/173,543 entitled "MODULAR MANIPULATION SYSTEM FOR MANIPULATING A SAMPLE UNDER STUDY WITH A MICROSCOPE" by Yu, et al.; the disclosures of which are hereby incorporated in their entirety herein.

BACKGROUND

[0005] Electron microscope equipment is often required to examine and perform manipulation of micro- and nano-scale objects. In general, electron microscopes employ a beam of electrons to irradiate a sample under study, wherein the wavelength of the electron beam is much smaller than the wavelength of light used in optical microscopes. Modern electron microscopes can view details at the atomic level with sub-nanometer resolution (e.g., 0.1 nm resolution) at a magnification of up to about one million. Electron microscopes and others which may be similarly employed include atomic force microscopes, scanning probe microscopes, scanning tunneling microscopes, near field optical scanning microscopes and transmission electron microscopes, among others.

[0006] A scanning electron microscope (SEM) is another type of electron microscope. In an exemplary SEM, a beam of electrons is focused to a point and scanned over the surface of the specimen. Detectors collect the backscattered and secondary electrons reflected or otherwise originating from the surface and convert them into a signal that is used to produce a realistic, three-dimensional image of the specimen. During the scanning process, the detector receives fewer electrons from depressions in the surface, and therefore lower areas of the surface appear darker in the resulting image. SEMs can provide a magnification of up to about two hundred thousand, possibly higher.

[0007] A focused ion beam (FIB) system is similar to a scanning electron microscope, except that instead of employing an electron beam, a beam of ions is scanned across the sample. The ion beam is ejected from a liquid metal ion source (e.g., gallium) with a spot size that is usually less than about 10 nm. FIB techniques can be employed in the preparation of samples for subsequent examination by a TEM or other electron microscope.

[0008] FIB specimens prepared for TEM are often manufactured by the "lift-out" method to provide a rapid means of preparing an electron transparent cross-section from a specific site of interest. In the lift-out method, a relatively large bulk sample can be inserted into the FIB chamber such that a specimen can be created from the surface of the sample. The specimen is then "lifted out" by the use of an electrostatic probe, which retrieves the sample from its trench and deposits the sample on an examination grid.

[0009] However, it can be difficult to accurately position and/or orient the retrieved sample with the electrostatic probe. For example, because the sample is temporarily adhered to the probe merely by electrostatic forces, the sample is not positively secured and may dislodge and/or become contaminated or destroyed. Consequently, an examination grid to which the sample is adhered or welded may be required. Such processes permit examination of the sample in only a single orientation, possibly requiring examination of multiple samples to adequately examine a substrate or substrate region.

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is emphasized that, in accordance with the standard practice in the industry, various features may not be drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

[0011] FIG. 1 is a schematic view of at least a portion of one embodiment of a system for microscopic examination according to aspects of the present disclosure.

[0012] FIG. 2 is a schematic view of at least a portion of one embodiment of a grasping element according to aspects of the present disclosure.

[0013] FIG. 3 is a schematic view of at least a portion of another embodiment of a grasping element according to aspects of the present disclosure.

[0014] FIG. 4A is a schematic view of at least a portion of another embodiment of a grasping element according to aspects of the present disclosure.

[0015] FIGS. 4B and 4C are schematic views of at least a portion of another embodiment of a grasping element according to aspects of the present disclosure.

[0016] FIGS. 4D and 4E are schematic views of at least a portion of another embodiment of a grasping element according to aspects of the present disclosure.

[0017] FIG. 5 is a schematic view of at least a portion of another embodiment of a grasping element according to aspects of the present disclosure.

[0018] FIG. 6 is a sectional view of at least a portion of one embodiment of a substrate having an FIB-prepared sample according to aspects of the present disclosure.

[0019] FIG. 7 is a top view of at least a portion of one embodiment of a substrate having an FIB-prepared sample according to aspects of the present disclosure.

[0020] FIG. 8 is a block diagram of at least a portion of one embodiment of a system according to aspects of the present disclosure.

[0021] FIG. 9 is a block diagram of one embodiment of a portion of the system shown in FIG. 8 according to aspects of the present disclosure.

DETAILED DESCRIPTION

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