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02/28/08 - USPTO Class 430 |  38 views | #20080050659 | Prev - Next | About this Page  430 rss/xml feed  monitor keywords

Method of patterning self-organizing material, patterned substrate of self-organizing material and method of producing the same, and photomask using patterned substrate of self-organizing material

USPTO Application #: 20080050659
Title: Method of patterning self-organizing material, patterned substrate of self-organizing material and method of producing the same, and photomask using patterned substrate of self-organizing material
Abstract: It is intended to provide a method of patterning a self-organizing material whereby a self-organizing material having a self-organization ability such as a nucleic acid can be aligned and immobilized in a desired manner on a substrate by using the imprint process, a patterned substrate of a self-organizing material and a method of producing the same, and a photomask. An immobilization layer containing a binder capable of binding to a self-organizing material is formed on a substrate. Then this immobilization layer is patterned by transferring an uneven pattern formed in a mold thereto by the imprint process. The self-organizing material is supplied onto the face having the uneven pattern of the immobilization layer transferred thereto. Thus, the self-organizing material is immobilized following the uneven pattern of the immobilization layer owing to the self-organization ability of the material per se and the binding ability of the binder contained in the immobilization layer.
(end of abstract)
Agent: Harness, Dickey & Pierce, P.L.C - Reston, VA, US
Inventors: Toshihito Ohtake, Ken-ichiro Nakamatsu, Shinji Matsui, Hitoshi Tabata, Tomoji Kawai
USPTO Applicaton #: 20080050659 - Class: 430005000 (USPTO)

Related Patent Categories: Radiation Imagery Chemistry: Process, Composition, Or Product Thereof, Radiation Modifying Product Or Process Of Making, Radiation Mask
The Patent Description & Claims data below is from USPTO Patent Application 20080050659.
Brief Patent Description - Full Patent Description - Patent Application Claims  monitor keywords

TECHNICAL FIELD

[0001] The present invention relates to a patterning method for immobilizing a self-organizing material in a desired pattern on a substrate by utilizing an imprinting process, the self-organizing material (such as nucleic acid or the like) having a self-organizing function, a self-organizing material-patterned substrate patterned with the self-organizing material in a desired pattern, and a method of producing the same, and a photomask made of the self-organizing material-patterned substrate.

BACKGROUND ART

[0002] In industrial materials and the like such as semiconductors typically, photolithography is generally used to perform micro fabrication. The photolithography is a technique for transferring or reprinting by radiating light, through a photomask, a photoresist applied on a silicon substrate thereby to perform reduced projection of a pattern of the photomask on the photoresist (see Non-Patent Citation 1). The photolithography makes it possible to produce wiring with fine diameters that had been impossible to make by conventional methods for processing parts in micro sizes.

[0003] For finer wirings, techniques to replace the techniques using light have been developed recently: a lithography techniques using an X ray (non-Patent citation 1), lithography techniques in which drawing is carried out by an electron beam directly (Non-Patent Citation 2, 3, and 4), lithography technique using an ion beam (non-Patent Citation 5), and the like techniques.

[0004] As they become capable of processing finer, these lithography techniques requires an exponential increase in an initial cost for an exposing apparatus itself. Moreover, some of the lithography techniques using masks face an increase in a cost of masks that make it possible to attain resolutions as much as the light wavelength to use.

[0005] In view of this, imprinting process has been remarked as a processing technique that attains a resolution of the order of 10 nm with low cost (Non-Patent Citation 6). The imprinting process is a processing technique for transferring a fine pattern of a mold on a resist by pressing the mold on the resist. The imprinting process makes it possible to perform microfabrication easily with low cost. With the imprinting process, a nano-scale structure can be formed quite easily.

[0006] Moreover, inventors of the present invention has already proposed a patterning method in which a poly-L-lysine layer is formed as a DNA immobilization layer on a glass substrate, and a DNA layer is immobilized on the DNA immobilization layer, and the DNA layer is patterned by imprinting process (Non-Patent Citation 7).

[0007] As an art in which a nucleic acid (typically DNA) is provided on a substrate, there is an attempt in for extending DNA straightly on a glass substrate by adding DNA in a gap between a pair of aluminum electrodes provided on the glass substrate and applying static electricity thereon (Non-Patent Citation 8). This technique, however, cannot form a pattern in a desired shape.

[0008] Furthermore, a micro contact printing method is also known (Non-Patent Citations 9 and 10). In the micro contact printing method, a stamp is prepared by transferring a micro-meter-sized pattern of a structure onto a rubber-like plastic, and molecules such as thiol or aminosilane, which forms a self-organizing film, are applied on surfaces of protrusions of the stamp. Then, the stamp is pressed against the substrate so as to form a patterned molecular film on the substrate by utilizing a chemical reaction between the molecules and the surface of the substrate. For example, in case where a molecular is formed using aminosilane, DNA is adsorbed to the molecular film if the DNA solution is applied onto the molecular film.

[Non-Patent Citation 1]

[0009] Radiation Application Development Association: Radiation Application Research Database; data number 018015

[Non-Patent Citation 2]

[0010] L. R. Harriot., S. D. Berger., C. Biddick., M. I. Blakey., S. W. Bowler., K. Brady., R. M. Camarda., W. F. Connelly., A. Crorken., J. Custy., R. Dimarco., R. C. Farrow., J. A. Felker., L. Fetter., R. Freeman., L. Hopkins., H. A. Huggins., C. S. Knurek., J. S. Kraus., J. A. Liddle., M. Mkrtychan., A. E. Novembre., M. L. Peabody., R. G. Tarascon., H. H. Wade., W. K. Waskiewicz., G. P. Watson., K. S. Werder and D. Windt., J. Vac. Sci. Technol. B14(6), 3825-3828, 1996

[Non-Patent Citation 3]

[0011] T. Yoshimura., H. Shiraishi., J. Yamamoto., and S. Okazaki., Appl. Phys. Lett. (63), 764-766, 1993

[Non-Patent Citation 4]

[0012] J. Yamamoto., S. Uchino., T. Hattori., T. Yoshimura., and F. Murai., Jpn. J. Appl. Phys. (35), 6511-6516, 1996

[Non-Patent Citation 5]

[0013] G. Gross., and R. Kaesmaier., J. Vac. Sci. Technol. B16(6), 1998

[Non-Patent Citation 6]

[0014] Jun TANIGUCHI, Iwao MIYAMOTO, Masanori FURUMURO, and Shinji MATSUI, Journal of the Japan Society for Abrasive Technology, vol. 46, No.6, 282-285, 2002

[Non-Patent Citation 7]

[0015] Toshihito OTAKE, Kenichiro NAKAMATSU, Shinji MATSUI, Hitoshi TABATA, and Tomoji KAAI, The spring meeting of Jpn. Soci. of Appl. Phys. in 2004 (Mar. 30, 2004), Digest of the spring meeting in 2004, No. 3, p. 1503

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