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03/27/08 - USPTO Class 216 | 1 views | #20080073321 | Prev - Next | About this Page

Method of patterning an anti-reflective coating by partial etching

USPTO Application #: 20080073321
Title: Method of patterning an anti-reflective coating by partial etching

Abstract: A method of patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming an anti-reflective coating (ARC) layer on the thin film, and forming a mask layer on the ARC layer. Thereafter, the mask layer is patterned to form a pattern therein, and the pattern is partially transferred to the ARC layer using a transfer process, such as an etching process. Once the mask layer is removed, the pattern is completely transferred to the ARC layer using an etching process, and the pattern in the ARC layer is transferred to the underlying thin film using another etching process.

(end of abstract)
USPTO Applicaton #: 20080073321 - Class: 216 41 (USPTO)

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Industry Class:
Etching a substrate: processes

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