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Method of manufacturing thin film transistor and method of manufacturing liquid crystal display device using the same

Method of manufacturing thin film transistor and method of manufacturing liquid crystal display device using the same description/claims

This application claims the benefit of Korean Patent Application No. 2006-0124387 filed on Dec. 8, 2006, which is hereby incorporated by reference for all purposes as if fully set forth herein.

1. Field of the Invention

The present disclosure relates to a thin film transistor, and more particularly, to a method of manufacturing a thin film transistor including a nanomaterial and a method of manufacturing a liquid crystal display device using the same.

2. Discussion of the Related Art

Recently, research for utilizing a nanomaterial such as a nanowire, a carbon nanotube, and a nanocable is actively under development. Therefore, a semiconductor layer can be formed of the nanomaterial.

The nanomaterial itself is formed of a crystal, such that its electron mobility is almost identical to that of a metal oxide semiconductor field effect transistor (MOSFET).

In the case where a thin film transistor is manufactured using the nanomaterial, the size of the thin film transistor can be minimized, so that a trend for the high degree of integration and miniaturization can be satisfied.

However, due to the lack of technology for arranging the nanomaterial until now, there is a limitation in manufacturing a nano thin film transistor.

Accordingly, it takes quite a manufacturing time to arrange the nanomaterial.

Thus, technology for easily arranging the nanomaterial is urgently needed.

Especially, the nanowire needs to be arranged with directionality to increases electron mobility. However, it is extremely difficult to form the nanowire with directionality through a present technological level.

Accordingly, the present invention is directed to a method of manufacturing thin film transistor and method of manufacturing liquid crystal display device using the same that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.

An advantage of the present invention is to provide a method of manufacturing a thin film transistor capable of reducing a manufacturing time, and a method of manufacturing a liquid crystal display device using the same.

Another advantage of the present invention is to provide a method of manufacturing a thin film transistor capable of improving electron mobility.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will become apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposed of the present invention, as embodied and broadly described, a method of manufacturing a thin film transistor includes: forming a gate insulating layer on a substrate having a gate electrode; forming a semiconductor layer of nanomaterial on the gate insulating layer; forming a source electrode and a drain electrode on the gate insulating layer; and applying a voltage to the source electrode and the drain electrode to arrange a direction of the nanomaterial.

In another aspect of the present invention, a method of manufacturing a liquid crystal display device includes: forming a gate electrode and a gate line on a substrate; forming a gate insulating layer on the substrate having the gate electrode; forming a semiconductor layer of nanomaterial on the gate insulating layer; forming a source electrode and a drain electrode on the gate insulating layer; applying a voltage to the source electrode and the drain electrode to arrange a direction of the nanomaterial; forming a passivation layer on the substrate having the source electrode and the drain electrode, the passivation layer having a contact hole exposing the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connecting to the drain electrode.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory, and are intended to provide further explanation of the invention as claimed.

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