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Method of manufacturing thin film device, electro-optic device, and electronic instrumentRelated Patent Categories: Semiconductor Device Manufacturing: Process, Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions, On Insulating Substrate Or Layer (e.g., Tft, Etc.)Method of manufacturing thin film device, electro-optic device, and electronic instrument description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20080096329, Method of manufacturing thin film device, electro-optic device, and electronic instrument. Brief Patent Description - Full Patent Description - Patent Application Claims
RELATED APPLICATION INFORMATION [0001] This application is a divisional of U.S. patent application Ser. No. 11/220,842 filed Sep. 8, 2005. This application the benefit of Japanese Application No. 2004-304645, filed Oct. 19, 2004. The disclosures of the above applications are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Technical Field [0003] The present invention relates to a method of manufacturing a thin film device using an inter-substrate transfer technology for the thin film device. [0004] 2. Related Art [0005] In semiconductor application devices such as liquid crystal display devices (LCD) or electroluminescence (EL) display devices, plastic substrates are sometimes used preferably as base substrates for the reason of preventing breakdown caused by deformation or dropping impacts, flexibility, or demands for weight saving. However, since the plastic substrates do not have enough heat resistance for a high temperature process required for manufacturing semiconductor devices, it is impossible to form semiconductor devices on the plastic substrates by an ordinary manufacturing process. [0006] As a technology for forming a semiconductor device on a plastic substrate, a transfer technology has been proposed, in which a semiconductor application device is manufactured by attaching an element-forming layer (a layer to be transferred, hereinafter referred to as a transfer layer), which has a thin film semiconductor device formed therein and is detached from a heat resistive transfer-source substrate, to a plastic substrate, the transfer-target substrate after forming the thin film semiconductor device on the transfer-source substrate. Such a transfer technology is described as "a peeling method" or the like in, for example, Japanese Unexamined Patent Publications No. 10-125929, No. 10-125930, and No. 10-125931 in detail. [0007] However, electro-optic instruments or electronic instruments in recent years are required to be packaged in high-density and low profiled, and accordingly, the thin film devices manufactured using the transfer technology described above are also required to be packaged in high-density without increasing thickness. SUMMARY [0008] In view of the above, an advantage of the invention is to provide a method of manufacturing a thin film device capable of realizing high-density and low profile packaging utilizing a transfer technology. [0009] In view of the problem described above, a method of manufacturing a thin film device according to one aspect of the invention is a method of manufacturing a thin film device by transferring transfer layers to both surfaces of a transfer-target substrate and includes the step of forming a pair of multi-layered structures in which the transfer layer including a thin film device is bonded to a temporary transfer substrate, the step of respectively adhering the transfer layers of the pair of multi-layered structures to the both surfaces of the transfer-target substrate, the step of separating the temporary transfer substrate from each of the transfer layers adhered to the transfer-target substrate. The step of forming the pair of multi-layered structures includes the step of forming the transfer layer on a transfer-source substrate via a first separation layer separated in accordance with application of a predetermined amount of energy, the step of bonding the transfer layer to the temporary transfer substrate, and the step of separating the transfer-source substrate from the transfer layer by applying energy to the first separation layer to cause the boundary separation and/or the intra-layer separation. [0010] According to the method described above, since the pair of transfer layers is temporarily fixed to the temporary transfer substrate, and then adhered to be transferred to the both surfaces of the single transfer-target substrate, and finally the temporary transfer substrate is separated, a thin film device can be provided on each surface of the transfer-target substrate using the transfer technology. Therefore, the thin film devices can be mounted in a high density while preventing the thickness becoming larger. Further, since the transfer layer is transferred to the transfer-target substrate using the transfer technology, the transfer-target substrate itself is not required to withstand a high temperature process or other processes in the manufacturing processes of the transfer layer, and accordingly, the thin film device manufactured in the high temperature process can be provided to, for example, a plastic substrate or the like. [0011] Here, the transfer-target substrate in the invention is not limited to the plastic substrate, but various substrates such as a glass substrate or a ceramic substrate can be adopted. [0012] Further, the separation layer is preferably formed of a material in which the binding power between atoms or molecules disappears or is reduced by irradiation with a light beam. This is because, by using the material having such characteristics, the irradiation with a light beam can easily make the physical binding power disappear or be reduced, thus making the separating operation easy. [0013] Such a material preferably includes amorphous silicon. This is because, amorphous silicon has such characteristics as described above, and is easily separated from the transfer-source substrate. [0014] Here, the step of bonding the transfer layer to the temporary transfer substrate includes the step of forming a second separation layer separated in accordance with application of a predetermined amount of energy on the temporary transfer substrate, and the step of bonding the second separation layer formed on the temporary transfer substrate and the transfer layer via an adhesive layer, and the step of separating the temporary transfer substrate can include the step of separating the temporary transfer substrate from the transfer layer by applying energy to the second separation layer to cause a boundary separation and/or all intra-layer separation in the second separation layer. According to the process described above, since the temporary transfer substrate is bonded via the second separation layer, the temporary transfer substrate can easily be separated by application of energy. [0015] Further, in the step of respectively adhering the transfer layers to the both surfaces of the transfer-target substrate, the transfer layers are preferably adhered via adhesive layers. Since only the adhesive layer intervenes between the layers, the thin film device can be prevented from becoming thicker. [0016] Further, a method of manufacturing a thin film device according to another aspect of the invention includes the step of manufacturing a multi-layered structure in which a transfer layer including a thin film device is transferred to a first surface of the transfer-target substrate, and the step of adhering a second surface of the transfer-target substrate having the transfer layer transferred to the first surface thereof to the other substrate provided with a thin film device while the second surface faces the other substrate [0017] According to the processes described above, the transfer layer is adhered to the first surface of the transfer-target substrate, and the second surface, the backside thereof is adhered to the other substrate having a thin film device, thus the thin film devices can be manufactured on both surfaces of the substrate. Therefore, high-density packaging is possible, and the whole of the thin film device can be made as a thin film by forming the substrate as thin as possible. [0018] For example, if the other substrate is also the transfer-target substrate having the same transfer layer transferred thereon, the pair of such substrates can be provided with flexibility in each of the substrates. [0019] Further, if the other substrate is a substrate having a thin film device stacked therein using a typical manufacturing method, for example, one of the substrates can be provided with higher rigidity than the other, and can be a glass substrate, for example. If the glass substrate is used, it is possible that the thin film device is directly formed on the substrate used as the transfer-source substrate, and then bonded with the other substrate. [0020] For example, the step of manufacturing the multi-layered structure includes the step of forming the transfer layer on the transfer-source substrate via the first separation layer separated in accordance with application of energy, the step of bonding the transfer layer to the temporary transfer substrate, the step of separating the transfer-source substrate from the transfer layer by applying energy to the first separation layer to cause the boundary separation and/or the intra-layer separation, the step of adhering the transfer layer to the first surface of the transfer-target substrate, and the step of separating the temporary transfer substrate from the transfer layer. According to these steps, since each of the transfer layers is adhered to the transfer-target substrate after being formed on the transfer-source substrate, the substrate itself does not need to withstand the high temperature process in the manufacturing processes of the transfer layer, and accordingly, the thin film device manufactured using a high temperature process can be provided on, for example, a plastic substrate. [0021] For example, the step of bonding the transfer layer to the temporary transfer substrate includes the step of forming the second separation layer separated in accordance with application of a predetermined amount of energy on the temporary transfer substrate, and the step of bonding the second separation layer formed on the temporary transfer substrate and the transfer layer to each other via the adhesive layer. Further, the step of separating the temporary transfer substrate includes the step of separating the temporary transfer substrate from the transfer layer by applying the second separation layer with energy to cause the boundary separation and/or the intra-layer separation in the second separation layer. According to this step, since the temporary transfer substrate is bonded via the second separation layer, the temporary transfer substrate can easily be separated by application of energy. Continue reading about Method of manufacturing thin film device, electro-optic device, and electronic instrument... 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