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  Method of manufacturing semiconductor device having oxide films with different thicknessRelated Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Field Effect Device, Having Insulated Electrode (e.g., Mosfet, Mos Diode), Gate Insulator Includes Material (including Air Or Vacuum) Other Than Sio 2The Patent Description & Claims data below is from USPTO Patent Application 20060125029. Brief Patent Description - Full Patent Description - Patent Application Claims
[0001] This application is a Continuation in Part of U.S. patent application Ser. No. 10/843,694, filed on May 12, 2004. This application claims priority to prior Japanese Application JP 2003-134265, the disclosure of which is incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] This invention relates to a method of manufacturing a semiconductor device, in particular, to a manufacturing method of a semiconductor device including transistors having gate insulating films with different thickness. [0003] There is a known semiconductor device, in which plural kinds of transistors having gate insulating films with different thickness are formed on a common substrate as a combination of a semiconductor memory and peripheral circuits thereof. [0004] A conventional method of manufacturing the semiconductor device of the above type uses an oxynitriding process for a thinner gate insulating film for one of the transistors. That is, nitrogen elements are mainly introduced into the thinner gate insulating film. No or few nitrogen elements are introduced into a thicker gate insulating film for another one of the transistors. [0005] Generally, when thickness of a gate oxide film is 7 nm or more as before, the oxynitriding process is unnecessary. This is because the thicker gate oxide film equal to or more than 7 nm has no problem such as leakage current and boron leakage. Moreover, the oxynitriding process is undesirable when the thickness of the gate oxide film is 5 nm or more because it deteriorates reliability of the gate oxide film. [0006] However, the gate oxide film of the transistor tends to become thin according to demands of miniaturizing, implementing thin design, and saving power consumption of the semiconductor device recently. Thus, importance of the oxynitriding process becomes high to suppress leakage current and to improve operating characteristics of the transistor. Therefore, in a case of manufacturing the semiconductor device including plural kinds of transistors having gate insulating films with different thickness, it becomes important to introduce nitrogen elements into not only the thinner gate insulating film but also the thicker gate insulating film. SUMMARY OF THE INVENTION [0007] In view of the foregoing and other exemplary problems, drawbacks, and disadvantages of the conventional methods and structures, an exemplary feature of the present invention is to provide a method of manufacturing a semiconductor device capable of introducing nitrogen elements into not only a thinner gate insulating film formed on a substrate but also a thicker gate insulating film formed on the substrate. [0008] Other exemplary features of this invention will become clear as the description proceeds. [0009] According to an exemplary aspect of this invention, a method of manufacturing semiconductor device includes multi-oxidation process for forming oxide films with different thickness on a substrate. The method includes executing an oxide film forming process for forming each of said oxide films on said substrate, and inevitably executing an oxynitriding process for forming nitride layer in each of said oxide films after the oxide film forming process. [0010] According to another exemplary aspect of this invention, a semiconductor device has a substrate with a plurality of regions. The semiconductor device comprises oxide films which are formed in the regions and which have different thickness. Nitride layers are formed at vicinities of interfaces between the oxide films and the substrate. BRIEF DESCRIPTION OF THE DRAWINGS [0011] FIGS. 1A-1F are schematic sectional views for describing a method of manufacturing a related semiconductor device including transistors having gate insulating films with different thickness; [0012] FIGS. 2A-2F are schematic sectional views for describing another method of manufacturing another related semiconductor device including transistors having gate insulating films with different thickness; [0013] FIGS. 3A-3F are schematic sectional views for describing a method of manufacturing a semiconductor device according to a first embodiment of this invention; [0014] FIG. 4 shows oxygen and nitrogen profiles before and after a second oxide film forming process using ISSG or plasma oxidation; [0015] FIG. 5 shows oxygen and nitrogen profiles before and after a second oxynitriding process; [0016] FIGS. 6A-6E are schematic sectional views for describing a method of manufacturing a semiconductor device according to a second embodiment of this invention; [0017] FIGS. 7A-7F are schematic sectional views for describing a method of manufacturing a semiconductor device according to a third embodiment of this invention; [0018] FIG. 8 depicts a semiconductor device according to an exemplary embodiment of this invention; [0019] FIGS. 9A-9E are schematic sectional views for describing a method of manufacturing a semiconductor device according to an exemplary embodiment of this invention; [0020] FIG. 10 depicts a semiconductor device according to an exemplary embodiment of this invention; [0021] FIGS. 11A-11B are schematic sectional views for describing a method of manufacturing a semiconductor device according to an exemplary embodiment of this invention; Continue reading... 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