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  Method of manufacturing semiconductor device, apparatus of manufacturing semiconductor device and semiconductor deviceThe Patent Description & Claims data below is from USPTO Patent Application 20080076261. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS-REFERENCE TO RELATED APPLICATIONS [0001]This application is based upon and claims the benefit of priorities from the prior Japanese Patent Application No. 2006-258536, filed on Sep. 25, 2006, and the prior Japanese Patent Application No. 2007-70033, filed on Mar. 19, 2007; the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002]1. Field of the Invention [0003]The present invention relates to method of manufacturing a semiconductor device, apparatus of manufacturing a semiconductor device and semiconductor device, and in particular to method of manufacturing a semiconductor device and apparatus of manufacturing semiconductor device which are suitable to form a fine pattern accurately, and semiconductor device made by the method or apparatus. [0004]2. Background Art [0005]When a fine pattern of a semiconductor device is formed by dry etching, a reactive ion etching (RIE) method which is excellent in dimensional controllability is frequently used. In the reactive ion etching (RIE) method, an etching gas is decomposed and activated by plasma to generate ions and neutral active species, and a fine pattern is formed on the surface of a semiconductor wafer (hereafter "wafer") by the action of them. Volatile reaction products generated when forming the pattern are exhausted out of a chamber by an exhauster. [0006]However, in some cases, part of the reaction products are deposited on an inner wall, electrodes, a dielectric window, etc. in the chamber without being exhausted. The deposited reaction products have a large influence on etching characteristics such as an etching rate, which becomes a cause of reducing the accuracy of line width dimensions of the pattern and the uniformity in the wafer surface of the line width dimensions. Such reduction leads to reduction in reliability of the semiconductor device as a product. [0007]For this reason, cleaning technologies for removing deposited reaction products (see Japanese Unexamined Patent Publication No. 5-129246, for example), and technologies for changing deposited reaction products to a strong film to reduce the influence (see Japanese Patent No. 3712898, for example), etc. are proposed. SUMMARY OF THE INVENTION [0008]According to an aspect of the invention, there is provided a method of manufacturing a semiconductor device in which films provided on a wafer are sequentially and dry-etched in a chamber, including the steps of: etching a first film provided on the wafer; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause the distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film. [0009]According to other aspect of the invention, there is provided a method of manufacturing a semiconductor device in which films provided on a wafer are sequentially and dry-etched in a chamber, including the step of: etching a first film provided on the wafer placed in the chamber; removing at least part of reaction products deposited in the chamber by the etching; and etching a second film provided under the first film on the wafer, information regarding an amount of the reaction products deposited in the chamber being obtained in at least any of etching the first film, removing the reaction products and etching the second film and a feedback being conducted to at least any of etching the first film, removing the reaction products and etching the second film in regard to a next wafer. [0010]According to other aspect of the invention, there is provided a method of manufacturing a semiconductor device in which films provided on a wafer are sequentially and dry-etched in a chamber, including the step of: etching a first film provided on the wafer placed in the chamber; removing at least part of reaction products deposited in the chamber by the etching; etching a second film provided under the first film on the wafer; and etching a third film provided under the second film on the wafer, information regarding an amount of the reaction products deposited in the chamber being obtained in at least any of etching the first film, removing the reaction products and etching the second film and a feed forward being conducted to etching the third film. [0011]According to other aspect of the invention, there is provided a method of manufacturing a semiconductor device in which films provided on a wafer are sequentially and dry-etched in a chamber, including the steps of: etching a first film provided on the wafer to form a pattern; and adjusting the size of the pattern using radicals generated from reaction products, when a mask left on the pattern is removed, the reaction products having been deposited on a component in the chamber facing the wafer by the etching. [0012]According to other aspect of the invention, there is provided a method of manufacturing a semiconductor device in which films provided on a wafer are sequentially and dry-etched in a chamber, including the steps of: etching a first film provided on the wafer in the chamber; and removing at least part of reaction products deposited on a component in the chamber facing the wafer having been placed in the chamber to cause the distribution state of the deposited reaction products to get closer to a uniform state after the wafer has been carried out of the chamber. [0013]According to other aspect of the invention, there is provided an apparatus of manufacturing a semiconductor device including: a chamber configured to contain a wafer; an exhausting system configured to exhaust air from the chamber; a gas supply system configured to supply the chamber with a gas; a high frequency power supply configured to form a plasma of the gas in the chamber; a wafer carrying section configured to carry the wafer into the chamber; a measuring section configured to acquire information about a reaction product accumulated in the chamber; and a control section configured to control operation of the exhausting system, gas supply system, high frequency power supply and the wafer carrying section, the control section being capable to conduct steps of: bringing the wafer carrying section into carrying the wafer into the chamber, bringing the exhausting system, the gas supply system and the high frequency power supply into etching a first film provided on a first wafer placed in a chamber; bringing the exhausting system, the gas supply system and the high frequency power supply into removing at least part of reaction products deposited in the chamber by the etching; and bringing the exhausting system, the gas supply system and the high frequency power supply into etching a second film provided under the first film on the first wafer, information regarding an amount of the reaction products deposited in the chamber being obtained by the measuring section in at least one of etching the first film, removing the reaction products and etching the second film, and a feedback being conducted to at least one of etching the first film, removing the reaction products and etching the second film in regard to a next wafer. [0014]According to other aspect of the invention, there is provided an apparatus of manufacturing a semiconductor device including: a chamber configured to contain a wafer; an exhausting system configured to exhaust air from the chamber; a gas supply system configured to supply the chamber with a gas; a high frequency power supply configured to form a plasma of the gas in the chamber; a wafer carrying section configured to carry the wafer into the chamber; a measuring section configured to acquire information about a reaction product accumulated in the chamber; and a control section configured to control operation of the exhausting system, gas supply system, high frequency power supply and the wafer carrying section, the control section being capable to conduct steps of: bringing the wafer carrying section into carrying the wafer into the chamber, bringing the exhausting system, the gas supply system and the high frequency power supply into etching a first film provided on the wafer placed in the chamber; bringing the exhausting system, the gas supply system and the high frequency power supply into removing at least part of reaction products deposited in the chamber by the etching; bringing the exhausting system, the gas supply system and the high frequency power supply into etching a second film provided under the first film on the wafer; and bringing the exhausting system, the gas supply system and the high frequency power supply into etching a third film provided under the second film on the wafer, information regarding an amount of the reaction products deposited in the chamber being obtained by the measuring section in at least any of etching the first film, removing the reaction products and etching the second film, and a feedforward being conducted to etching the third film. [0015]According to other aspect of the invention, there is provided a semiconductor device manufactured using a method including: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film provided on the wafer in the chamber. [0016]According to other aspect of the invention, there is provided a semiconductor device manufactured using a method including: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited in the chamber by the etching; and etching a second film provided under the first film on the wafer, information regarding an amount of the reaction products deposited in the chamber being obtained in at least one of etching the first film, removing the reaction products and etching the second film, and a feedback being conducted to at least one of etching the first film, removing the reaction products and etching the second film in regard to a next wafer, based on the information. [0017]According to other aspect of the invention, there is provided a semiconductor device manufactured using a method including: etching a first film provided on a wafer placed in a chamber; removing at least part of reaction products deposited in the chamber by the etching; etching a second film provided under the first film on the wafer; and etching a third film provided under the second film on the wafer, information regarding an amount of the reaction products deposited in the chamber being obtained in at least one of etching the first film, removing the reaction products and etching the second film, and a feedforward being conducted to etching the third film. [0018]According to other aspect of the invention, there is provided a semiconductor device manufactured using a method including: etching a first film provided on a wafer to form a pattern in a chamber; and adjusting size of the pattern using radicals generated from reaction products, when a mask left on the pattern is removed, the reaction products having been deposited on a component in the chamber facing the wafer by the etching. BRIEF DESCRIPTION OF THE DRAWINGS [0019]FIG. 1 shows schematic process cross-sectional views illustrating a method of manufacturing a semiconductor device according to an embodiment of the invention. [0020]FIG. 2 is a graph illustrating the influence of reaction products deposited in the shape of a mountain on an upper electrode. Continue reading... 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