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  Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the sameUSPTO Application #: 20070020799Title: Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same Abstract: In methods of manufacturing a variable resistance structure and a phase-change memory device, after forming a first insulation layer on a substrate having a contact region, a contact hole exposing the contact region is formed through the first insulation layer. After forming a first conductive layer on the first insulation layer to fill up the contact hole, a first protection layer pattern is formed on the first conductive layer. The first conductive layer is partially etched to form a contact and to form a pad on the contact. A second protection layer is formed on the first protection layer pattern, and then an opening exposing the pad is formed through the second protection layer and the first protection layer pattern. After formation of a first electrode, a phase-change material layer pattern and a second electrode are formed on the first electrode and the second protection layer. (end of abstract) Agent: Marger Johnson & Mccollom, P.C. - Portland, OR, US Inventors: Suk-Hun CHOI, Chang-Ki HONG, Yoon-Ho SON, Jang-Eun HEO USPTO Applicaton #: 20070020799 - Class: 438103000 (USPTO) Related Patent Categories: Semiconductor Device Manufacturing: Process, Having Selenium Or Tellurium Elemental Semiconductor Component, Direct Application Of Electrical Current The Patent Description & Claims data below is from USPTO Patent Application 20070020799. Brief Patent Description - Full Patent Description - Patent Application Claims Continue reading... Full patent description for Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. Start now! - Receive info on patent apps like Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same or other areas of interest. ### Previous Patent Application: Methods to minimize contact resistance Next Patent Application: Etch stop layer for silicon (si) via etch in three-dimensional (3-d) wafer-to-wafer vertical stack Industry Class: Semiconductor device manufacturing: process ### FreshPatents.com Support Thank you for viewing the Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same patent info. IP-related news and info Results in 0.74339 seconds Other interesting Feshpatents.com categories: Accenture , Agouron Pharmaceuticals , Amgen , AT&T , Bausch & Lomb , Callaway Golf |
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