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Method of forming a multi-layer semiconductor structure having a seam-less bonding interfaceRelated Patent Categories: Semiconductor Device Manufacturing: Process, Coating With Electrically Or Thermally Conductive Material, To Form Ohmic Contact To Semiconductive Material, Contacting Multiple Semiconductive Regions (i.e., Interconnects)Method of forming a multi-layer semiconductor structure having a seam-less bonding interface description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20060099796, Method of forming a multi-layer semiconductor structure having a seam-less bonding interface. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS REFERENCE TO RELATED APPLICATIONS [0001] This application claims the benefit under 35 U.S.C. .sctn.119(e) of U.S. Provisional Application No. 60,437,549, filed on Dec. 31, 2002, entitled, A Multi-Layer Integrated Semiconductor Structure, and is a continuation of U.S. patent application Ser. No. 10/655,670, filed on Sep. 5, 2003, entitled, Method of Forming A Multi-Layer Semiconductor Structure Having A Seam-Less Bonding Interface, both of which are hereby incorporated by reference in its entirety. FIELD OF THE INVENTION [0002] The present invention relates generally to a method of forming a multi-layer semiconductor structure and, more specifically, to a method of forming an integrated multi-layer semiconductor structure that includes a number of semiconductor structures bonded together by one or more seamless conductive bonding interfaces, which are adapted to provide a strong and reliable bond, as well as, to provide electrical communications between the number of semiconductor structures. BACKGROUND [0003] A number of individual integrated circuit structures can be aligned and bonded together to form an interconnected multi-layer semiconductor structure, which is commonly referred to as a three-dimensional semiconductor structure. Typically, the number of individual integrated circuits can be bonded together to form the three-dimensional semiconductor structure using various adhesives, as are known. [0004] One potential problem that may occur in bonding a first individual integrated circuit structure to a second individual integrated circuit structure, for example, is related to the formation of a bonding structure seam or more simply, a "bonding seam" at the interface between the bonded first and second individual integrated circuit structures. The bonding seam is a seam or delineation between adhesive materials which are applied to each opposing surface of the first and second individual integrated circuit structures prior to bonding. In other words, the bonding seam delineates bonding adhesive material associated with the first individual integrated circuit structure from bonding adhesive material associated with the second individual integrated circuit structure. A number of small air gaps can be formed on the bonding seam, which may significantly reduce the strength of the bond formed between the first and second integrated circuit structures. Furthermore, the number of small air gaps formed on the bonding seam can also have an adverse impact on electrical properties formed between the bonded first and second integrated circuit structures. [0005] Therefore, it would be desirable to provide a method of forming a seamless coupling or bonding structure for coupling a number of individual integrated circuit structures of a multi-layer semiconductor structure, which has a relatively high bonding strength. SUMMARY OF THE INVENTION [0006] A method of forming a multi-layer semiconductor structure is set forth in accordance with principles of the present invention. The method of forming the multi-layer semiconductor structure includes providing, to a first predetermined thickness, a first patterned bond film onto a first surface of a first semiconductor structure. A second patterned bond film is provided, to a second predetermined thickness, onto a first surface of a second semiconductor structure. The first patterned bond film of the first semiconductor structure and the second patterned bond film of the second semiconductor structure are aligned using a fixture. Thereafter, a bond is formed between the first and second patterned bond films to provide the first and second semiconductor structures as the multi-layer semiconductor structure. [0007] In one aspect of the present invention, forming the bond includes heating or annealing the first and second patterned bond films to a predetermined temperature. Further, a force is applied to at least one of the first and the second semiconductor structures for a predetermined period of time to maintain contact between the first and second patterned bond films for the predetermined period of time. [0008] In one aspect of the present invention, aligning the first and second semiconductor structures using the fixture includes disposing the first and second semiconductor structures on the fixture. While the first and second semiconductor structures are disposed on the fixture, a predetermined space is maintained between the first and second semiconductor structures using a plurality of spacers, which are disposed between the first and second semiconductor structures. [0009] In another aspect of the present invention, forming the bond includes disposing the fixture and the first and second semiconductor structures in a bonding chamber. Thereafter, undesired impurities are purged from the bonding chamber. A first predetermined force is applied to the first and the second semiconductor structures for a first predetermined time interval. While the first predetermined force is applied, the plurality of spacers are removed from between the first and second semiconductor structures. The first and second semiconductor structures are heated at a first predetermined rate to a predetermined bonding temperature. A second predetermined force is applied to the first and the second semiconductor structures for a second predetermined time interval while heating the first and second semiconductor structures at the first predetermined rate. A third predetermined force is applied to the first and second semiconductor structures for a third predetermined time interval after reaching the predetermined bonding temperature. [0010] In an aspect of the present invention, after purging undesirable impurities from the bonding chamber, such as oxygen and/or water vapor, the method further includes evacuating the bonding chamber to a predetermined pressure. In another aspect, a non-oxidizing ambient can be formed in the bonding chamber, after purging undesirable impurities from the bonding chamber. In yet another aspect, a non-oxidizing ambient that includes hydrogen can be formed in the bonding chamber. [0011] The method can further include cooling the first and second semiconductor structures. Thereafter, the multi-layer semiconductor structure can be heated at a predetermined temperature for a fourth predetermined time interval. [0012] In an aspect of the present invention, providing the first patterned bond film includes providing at least one of a metallic bond film, such as a copper bond film, or an alloy bond film. Similarly, providing the second patterned bond film includes providing at least one of a metallic bond film, such as a copper bond film, or an alloy bond film. [0013] In an aspect of the present invention, providing the first patterned bond film onto the first surface of the first semiconductor structure includes providing the first patterned bond film onto the first surface of a first semiconductor wafer structure. Similarly, providing the second patterned bond film onto the first surface of the second semiconductor structure includes providing the second patterned bond film onto the first surface of a second semiconductor wafer structure. [0014] In another aspect of the present invention, providing the first patterned bond film onto the first surface of the first semiconductor structure includes providing the first patterned bond film onto a first surface of a first semiconductor die structure. Similarly, providing the second patterned bond film onto the first surface of the second semiconductor structure includes providing the second patterned bond film onto a first surface of a second semiconductor die structure. In another aspect, providing the second patterned bond film onto the first surface of the second semiconductor structure includes providing the second patterned bond film onto at least a portion of a first surface of a second semiconductor wafer structure. [0015] Another method of forming a multi-layer semiconductor structure is set forth in accordance with principles of the present invention. The method of forming the multi-layer semiconductor structure includes retaining a first semiconductor structure to a second semiconductor structure using a fixture, such that the first and second semiconductor structures are separated by a predetermined distance. A number of spacer flaps are employed to maintain the predetermined distance or spacing between the first and second semiconductor structures, while the first and second semiconductor structures are retained on the fixture. In one aspect, retaining may include pressing and/or clamping the first semiconductor structure to the second semiconductor structure using the fixture. [0016] The fixture, which includes at least the first and second semiconductor structures, is disposed in a bonding chamber. The bonding chamber is purged to remove undesirable impurities, such as oxygen and/or water vapor. A first predetermined force is applied to the first and the second semiconductor structures for a first predetermined time interval. While the first and second semiconductor structures are under the first predetermined force, the spacer flaps are removed from between the first and second semiconductor structures. A second predetermined force is applied to the first and the second semiconductor structures for a second predetermined time interval while heating the first and second semiconductor structures at a first predetermined rate. A third predetermined force is applied to the first and second semiconductor structures for a third predetermined time interval. The first and second semiconductor structures are subsequently cooled. The method further includes heating the multi-layer semiconductor structure at a predetermined temperature for a fourth predetermined time interval. [0017] In one aspect of the present invention, after the bonding chamber is purged the method further includes evacuating the bonding chamber to a predetermined pressure. In another aspect, after the bonding chamber is purged the method further includes forming a non-oxidizing ambient in the bonding chamber. In yet another aspect, after the bonding chamber is purged the method further includes forming a non-oxidizing ambient in the bonding chamber, which includes hydrogen. [0018] In an aspect of the present invention, retaining the first semiconductor structure to the second semiconductor structure includes retaining a first semiconductor wafer structure to a second semiconductor wafer structure. Similarly, in another aspect, retaining the first semiconductor structure to the second semiconductor structure includes retaining a first semiconductor die structure to a second semiconductor die structure. In a further aspect, retaining the first semiconductor structure to the second semiconductor structure includes retaining a first semiconductor die structure to at least a portion of a second semiconductor wafer structure. [0019] In another method of forming a multi-layer semiconductor structure in accordance with the present invention, the method includes providing, to a first predetermined thickness, a first patterned bond film onto a first surface of a first semiconductor structure. The method further includes providing, to a second predetermined thickness, a second patterned bond film onto a first surface of a second semiconductor structure. The first patterned bond film of the first semiconductor structure and the second patterned bond film of the second semiconductor structure are aligned with predetermined portions of a third semiconductor structure. A bond is formed between the first, second and third semiconductor structures using the first and second patterned bond films to provide the multi-layer semiconductor structure. [0020] In an aspect of the present invention, forming the bond between the first, second and third semiconductor structures includes forming a bond between first, second and third semiconductor die elements to provide the multi-layer semiconductor structure. Furthermore, forming the bond between the first, second and third semiconductor die elements includes forming a bond between the first semiconductor die element having a first geometry and/or shape, the second semiconductor die element having a second geometry and/or shape and the third semiconductor die element having a third geometry and/or shape. Continue reading about Method of forming a multi-layer semiconductor structure having a seam-less bonding interface... 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