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Method of forming a gate oxide film for a high voltage region of a flash memory device

Abstract: A method of forming a gate oxide film for high voltage region of semiconductor devices includes forming patterns on a semiconductor substrate having a high voltage region, thereby exposing only a gate oxide film formation region for high voltage, forming a metal oxidization layer on the entire surface, and performing a process of removing the patterns, thereby forming the metal oxidization layer only in the gate oxide film formation region for high voltage. ...

Agent: Marshall, Gerstein & Borun LLP - Chicago, IL, US
Inventor: Eun Soo Kim
USPTO Applicaton #: #20070210358 - Class: 257288000 (USPTO) - 09/13/07 - Class 257

Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Field Effect Device, Having Insulated Electrode (e.g., Mosfet, Mos Diode)
The Patent Description & Claims data below is from USPTO Patent Application 20070210358, Method of forming a gate oxide film for a high voltage region of a flash memory device.

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