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07/26/07 - USPTO Class 205 |  114 views | #20070170064 | Prev - Next | About this Page  205 rss/xml feed  monitor keywords

Method of electrolytically depositing materials in a pattern directed by surfactant distribution

USPTO Application #: 20070170064
Title: Method of electrolytically depositing materials in a pattern directed by surfactant distribution
Abstract: In accordance with the invention, a surface of a substrate is patterned by the steps of providing the substrate, forming a surfactant pattern on the surface and using electroless deposition or electrodeposition to deposit material on the surface in a pattern directed by the surfactant pattern. The material will preferentially deposit either under the surfactant pattern or outside the surfactant pattern depending on the material and the conditions of deposition. The surfactant pattern is conveniently formed by printing on the surface a surfactant that forms a self assembled monolayer (SAM). The method can be adapted to build complex structures in one, two and three dimensions. (end of abstract)



Agent: Patent Docket Administrator Lowenstein Sandler PC - Roseland, NJ, US
Inventors: Noshir Sheriar Pesika, Kathleen Joan Stebe, Peter Searson
USPTO Applicaton #: 20070170064 - Class: 205118000 (USPTO)

Related Patent Categories: Electrolysis: Processes, Compositions Used Therein, And Methods Of Preparing The Compositions, Electrolytic Coating (process, Composition And Method Of Preparing Composition), Coating Selected Area

Method of electrolytically depositing materials in a pattern directed by surfactant distribution description/claims


The Patent Description & Claims data below is from USPTO Patent Application 20070170064, Method of electrolytically depositing materials in a pattern directed by surfactant distribution.

Brief Patent Description - Full Patent Description - Patent Application Claims
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CROSS REFERENCE TO RELATED APPLICATIONS

[0001] This is a divisional of U.S. patent application Ser. No. 10/836,021 filed on Apr. 29, 2004 entitled "Method of Electrolytically Depositing Materials in a Pattern Directed by Surfactant Distribution", which is hereby incorporated herein by reference. U.S. patent application Ser. No. 10/836,021, in turn, claims the benefit of U.S. Provisional Application Ser. No. 60/467,248 filed on May 1, 2003 by the present inventors and entitled "Patterned Deposition of Materials as Directed by Surfactant Distribution on Electrodes". It also claims the benefit of identically titled Provisional Application Ser. No. 60/523,498 filed by the present inventors on Nov. 18, 2003. Both provisional applications are incorporated herein by reference.

FIELD OF THE INVENTION

[0003] This invention relates to lithography and, in particular, to a method of high resolution lithography using a surfactant pattern to direct the electrolytic deposition of materials on a substrate surface. The process can be used to produce structures patterned in one, two and three dimensions.

BACKGROUND OF THE INVENTION

[0004] Lithographic processes are crucial for the manufacture of many microelectronic, optical and nanoscale devices, including computer chips, data storage devices, flat screen displays and sensors. Lithographic processes are used to create patterned areas on the surface of a substrate which, in turn, can be further processed as by etching, doping, oxidizing, growing or other processing to form the features of a desired component, circuit or other device.

[0005] The competitive pressure to increase the functionality of such devices has required smaller and smaller patterns. As a consequence, manufacturers are pressing the limits of conventional optical and electron beam lithography. Optical lithography forms a pattern by exposing a photoresist to light through an exposure mask. As is well known, optical lithography is limited by the wavelength of the exposure light. Shorter wavelength light, now in the ultraviolet range, is being used to expose smaller patterns, but the shorter the wavelength, the more complex and expensive the equipment required to generate the light and pattern the substrate.

[0006] Electron beam lithography (e-beam lithography) forms a pattern on a resist-covered substrate by projecting an electron beam line-by-line onto the resist to form the pattern. However e-beam lithography is limited in resolution by the need for special stencil masks and, because of its line-by-line exposure, is too limited in speed for satisfactory manufacturing. Moreover both optical and electron beam lithography typically use polymer resists which require time consuming steps to develop and remove.

[0007] Accordingly there is a need for simpler, faster and less expensive processes for high resolution lithography.

SUMMARY OF THE INVENTION

[0008] In accordance with the invention, a surface of a substrate is patterned by the steps of providing the substrate, forming a surfactant pattern on the surface and using electroless deposition or electrodeposition to deposit material on the surface in a pattern directed by the surfactant pattern. The material will preferentially deposit either under the surfactant pattern in the pattern of the surfactant or outside the surfactant pattern in the complement of the surfactant pattern depending on the material and the conditions of deposition. The surfactant pattern is conveniently formed by printing on the surface a surfactant that forms a self assembled monolayer (SAM). The method can be adapted to build complex structures in one, two and three dimensions.

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The nature, advantages and various additional features of the invention will appear more fully upon consideration of the illustrative embodiments of the invention described in detail in connection with the accompanying drawings. In the drawings:

[0010] FIG. 1 is a schematic block diagram showing the steps in patterning a surface of a substrate in accordance with the invention;

[0011] FIGS. 2A, 2B and 2C illustrate steps of an advantageous method of forming a pattern of surfactant on a substrate;

[0012] FIGS. 3A, 3B show apparatus for electrodeposition and for electroless deposition respectively;

[0013] FIG. 4 schematically illustrates a stamp for forming a surfactant pattern on a substrate;

[0014] FIG. 5 is an AFM image of a pattern of electrodeposited material;

[0015] FIG. 6 is an AFM image of a pattern of electrodeposited material;

[0016] FIGS. 7A, 7B and 7C are a series of AFM images of material deposited at various deposition potentials.

[0017] FIG. 8 is an AFM image of nanoscale-width deposited stripes;

[0018] FIG. 9 illustrates adaptation of the FIG. 1 process to grow a second material between stripes of a first material;

[0019] FIGS. 10A and 10B show a multicomponent structure formed by the process of FIG. 1;

[0020] FIG. 11 illustrates adaptation of the FIG. 1 process to form a composite 3D structure;

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