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Method for manufacturing image sensor

Method for manufacturing image sensor description/claims

The present application claims the benefit under 35 U.S.C. §119 of Korean Patent Application No. 10-2007-0050617, filed May 25, 2007, which is hereby incorporated by reference in its entirety.

According to a related art, a microlens photo process is performed by using a special photoresist used to form a microlens and then performing a reflowing process relative to the special photoresist to form the microlens of an image sensor.

However, according to the related art, a gap may be formed between the microlenses during the reflow process of the photoresist, so that an amount of light incident into a photodiode is reduced, causing defect of an image.

In addition, when a microlens including an organic substance is manufactured through the related art, particles can be generated when a wafer is sawn in a subsequent process, such as a packaging process or a bumping process of a semiconductor chip mounting process. The particles may collide with the microlens or adhere to the microlens, thereby causing defect of an image.

In addition, according to the related art, the margin of the microlens may be insufficient and curvature of the lens may be very small, so that the microlens cannot effectively collect the light.

Embodiments of the present invention provide a method of manufacturing an image sensor, and in particular, a method of fabricating a microlens. Embodiments of the subject method are capable of minimizing a gap between microlenses.

An embodiment of the present invention also provides a method of manufacturing an image sensor capable of improving a curvature of a microlens.

According to embodiments, the manufacturing process for a microlens can be simplified while enabling mass-production of the microlenses.

In one embodiment, the method can include forming an interlayer dielectric layer on a substrate; forming a color filter on the interlayer dielectric layer; and forming photoresist bubbles on the color filter to form a microlens.

In another embodiment, the method can include: forming an interlayer dielectric layer on a substrate; and forming color photoresist bubbles on the interlayer dielectric layer to form a color microlens.

FIGS. 1 to 3 are cross-sectional views showing a method of manufacturing an image sensor according to an embodiment of the present invention.

FIGS. 4 and 5 are cross-sectional views showing a method of manufacturing an image sensor according to an embodiment of the present invention.

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