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08/17/06 - USPTO Class 700 | 19 views | #20060184266 | Prev - Next | About this Page

Method for making thin film devices intended for solar cells or silicon-on-insulator (soi) applications

Title: Method for making thin film devices intended for solar cells or silicon-on-insulator (soi) applications

Related Patent Categories: Data Processing: Generic Control Systems Or Specific Applications, Specific Application, Apparatus Or Process, Product Assembly Or Manufacturing, Particular Manufactured Product Or Operation, Integrated Circuit Production Or Semiconductor Fabrication

Brief Patent Description - Full Patent Description - Patent Claims

The Patent Description & Claims data below is from USPTO Patent Application 20060184266, Method for making thin film devices intended for solar cells or silicon-on-insulator (soi) applications.

1. A system for fabricating a thin film device comprising: an apparatus for transferring a thin semiconductor layer to a dummy substrate, the thin semiconductor layer not being attached to the dummy substrate; and an apparatus configured to fabricate a device on the thin semiconductor layer after the thin semiconductor layer is transferred to the dummy substrate.

2. The system of claim 1, further comprising an apparatus for forming the thin semiconductor layer on a substrate so that the thin semiconductor layer is free-standing on the substrate.

3. The system according to claim 2, further comprising an apparatus configured to separate the thin semiconductor layer from the substrate.

4. The system of claim 1, wherein the fabricating apparatus fabricates an epitaxial silicon layer on the thin semiconductor layer.

5. The system of claim 1, wherein the apparatus configured to fabricate a device is adapted for fabricating a first device on a first side of the thin semiconductor layer and for fabricating a second device on a second side of the thin semiconductor layer.

6. The system of claim 1, wherein the apparatus configured to fabricate a device is adapted for fabricating at least one of a front and a back side of a solar cell on the thin semiconductor layer.

7. The system of claim 1, wherein the fabricating apparatus deposits an active semiconductor layer on the thin semiconductor layer.

8. The system according to claim 7, wherein deposition of the active semiconductor layer is performed by epitaxial Chemical Vapor Deposition.

9. The system of claim 1, further comprising an apparatus for transferring the thin semiconductor layer, comprising the device, to a foreign substrate.

10. The system of claim 9, further comprising an apparatus for bonding the thin semiconductor layer to the foreign substrate.

11. The system of claim 1, wherein the device is a non-finished device that is further finished after attachment to a foreign substrate.

12. The system of claim 1, wherein the thin semiconductor layer is separated from the substrate by immersing the substrate in a HF solution in concentration between about 12 and 35% and using current densities between about 50 and 250 mA/cm.sup.2.

13. The system of claim 1, wherein the thin semiconductor layer is a double layer of crystalline or amorphous semiconductor material including silicone germanium, III-V materials such as Ga As, InGaAs and semiconducting polymers.

14. The system of claim 9, wherein the foreign substrate comprises a low-cost substrate.

15. The system of claim 1, wherein the thin film device comprises a solar cell.

16. The system of claim 9, wherein the foreign substrate comprises glass.

17. A system for manufacturing a thin film device comprising: means for transferring a thin semiconductor layer to a dummy substrate, the thin semiconductor layer not being attached to the dummy substrate; and means for fabricating a device on the thin semiconductor layer after being transferred to the dummy substrate.

18. The system of claim 17, further comprising means for forming the thin semiconductor layer on a substrate so that the thin semiconductor layer is free-standing on the substrate.

19. The system of claim 18, further comprising means for separating the thin semiconductor layer from the substrate.

20. The system of claim 17, further comprising means for attaching the device and the thin semiconductor layer on a foreign substrate.

21. The system of claim 17, further comprising means for bonding the thin semiconductor layer to the foreign substrate.

22. The system of claim 17, wherein the fabricating means comprises means for fabricating an epitaxial silicon layer.

23. The system of claim 17, wherein the fabricating means is adapted for fabricating a first device on a first side of the thin semiconductor layer and for fabricating a second device on a second side of the thin semiconductor layer.

24. The system of claim 17, wherein the fabricating means is adapted for fabricating at least one of a front and a back side of a solar cell on the thin semiconductor layer.

25. The system of claim 17, wherein the fabricating means deposits an active semiconductor layer on the thin semiconductor layer.

26. The system according to claim 25, wherein deposition of the active semiconductor layer is performed by epitaxial Chemical Vapor Deposition.

27. The system of claim 17, wherein the device is a non-finished device that is further finished after attachment to a foreign substrate.

28. The system of claim 17, wherein the thin semiconductor layer is separated from the substrate by immersing the substrate in a HF solution in concentration between about 12 and 35% and using current densities between about 50 and 250 mA/cm.sup.2.

29. The system of claim 1, wherein the thin semiconductor layer is a porous semiconductor layer.

30. The system of claim 17, wherein the thin semiconductor layer is a porous semiconductor layer.

31. The system of claim 1, further comprising means for clamping the thin semiconductor layer on the dummy substrate.

32. The system of claim 17, further comprising means for clamping the thin semiconductor layer on the dummy substrate.

33. A system for fabricating a thin film device, the system being configured to form a thin semiconductor layer on a substrate so that the thin semiconductor layer is free-standing on the substrate, separate the thin semiconductor layer from the substrate, and fabricate a device on the thin semiconductor layer after the thin semiconductor layer is separated from the substrate.

Brief Patent Description - Full Patent Description - Patent Claims

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