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Method for forming barrier metal of semiconductor deviceRelated Patent Categories: Semiconductor Device Manufacturing: Process, Coating With Electrically Or Thermally Conductive Material, To Form Ohmic Contact To Semiconductive Material, Contacting Multiple Semiconductive Regions (i.e., Interconnects), Multiple Metal Levels, Separated By Insulating Layer (i.e., Multiple Level Metallization), With Formation Of Opening (i.e., Viahole) In Insulative LayerMethod for forming barrier metal of semiconductor device description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20060292862, Method for forming barrier metal of semiconductor device. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS REFERENCE TO RELATED APPLICATIONS [0001] This application is a divisional of U.S. application Ser. No. 10/725,381, filed Dec. 3, 2003, which claimed priority to Korean Application 10-2002-0080010, filed Dec. 14, 2002, the entire contents of both applications being incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a method for forming a barrier metal of a semiconductor device, particularly for forming a thick layer of TiSiN for a barrier metal having a low resistivity, using an atomic layer deposition (ALD) process. [0004] 2. Description of the Prior Art [0005] Generally, with high integration of semiconductor devices, a design rule also becomes elaborated, and thus a size of a source/drain and a line width of a gate electrode of a MOS transistor and a line width of metallization become diminished. In particular, when the line width of the metallization is diminished, a size of a contact hole is also diminished, in which the contact hole is either for contacting the gate electrode and the metallization or for contacting the source/drain and the metallization. If so, since contact resistances of the gate electrode and the metallization are incased, a resistance of the metalization is increased. Consequently, an operation speed of the semiconductor device is delayed. Nevertheless, it is true that a demand for speedup of the semiconductor device is more enhanced together with its high integration. [0006] As one scheme for satisfying this demand, a layer of a high fusion metal, e.g. tungsten (W) has been recently used to reduce the contact resistance. Further, in order to reduce contact resistances of the tungsten layer and the contact region, a barrier metal is formed between the tungsten layer and the contact region. Among the barrier metals, it is a TiSiN layer that is considered as one having an excellent characteristic. However, the TiSiN layer is generally layered by a sputtering process, thus having a very high resistivity. As a result, the TiSiN layer has no choice but to have limited application as the barrier metal. Recently, in order to solve this problem, a method for forming a new layer of TiSiN has been proposed. [0007] According to a conventional method for forming a layer of TiSiN, as shown in FIGS. 1 to 3, an insulating layer 11 is formed on a semiconductor substrate 10. Here, even though not shown in the drawings, it is apparent to those skilled in the art that, in order to define an active region of the substrate 10, a field oxide layer may be formed on a field region of the substrate 10, while a source/drain, a gate electrode, etc. of a transistor may be previously formed on the active region of the substrate 10. Subsequently, in order to expose a contact part (not shown) of the semiconductor substrate 10 using a photolithography process, the insulating layer 11 on the contact part of the semiconductor substrate 10 is etched to form a contact hole 12. Next, a precursor layer 13, for exampleatetakis dimethyl amido titanium ("TDMAT") layer is layered inside the contact hole 12 and on the insulating layer 11 at a desired thickness. Then, the precursor layer 13 is plasma processed and transformed into a TN layer 15. Finally, the surface of the TiN layer 15 is brought into a repetitive contact with a SiH.sub.4 gas using a chemical vapor deposition (CVD) process, so that the TiN layer 15 is transformed into a TiSiN layer 17. [0008] However, it is difficult to perform thick deposition of the TiSiN layer 17. Further, because resistivity of the TiSiN layer 17 is rather high, the TiSiN layer 17 can be only used as the barrier metal within a limited range. [0009] Meanwhile, U.S. Pat. No. 6,271,136, titled "MULTI-STEP PLASMA PROCESS FOR FORMING TiSiN BARRIER" and issued to TSMC Company of Tiwan, discloses a method for improving a TiSiN layer as a copper barrier metal by means of Metal Organic Chemical Vapor Deposition (MOCVD) and multi-step plasma process. However, the disclosed document does not offer a solution to form a TiSiN layer for a barrier metal having a low specific resistance and a thick thickness. SUMMARY OF THE INVENTION [0010] Accordingly, the present invention has been made to solve the above-mentioned problems occurring in the prior art, and an object of the present invention is to provide a method for forming a barrier metal, capable of reducing a contact resistance of a TiSiN layer for the barrier metal using an atomic layer deposition process. [0011] It is another object of the present invention is to provide a method for forming a barrier metal, capable of readily performing deposition of a TiSiN layer at a desired thickness. [0012] It is yet another object of the present invention is to provide a method for forming a barrier metal, capable of reducing resistivity of a TiSiN layer. [0013] In order to accomplish these objects, there is provided a method for forming a barrier metal of a semiconductor device, including: forming an insulating layer on a semiconductor substrate and forming an opening in the insulating layer, forming a TiSN layer having a desired thickness by repeatedly performing a process of forming a TiSIN layer having an atomic layer thickness, which performs deposition of a SiH.sub.4 layer inside the opening and on the insulating layer using an atomic layer deposition process and performs deposition of a certain precursor layer on the SiH.sub.4 layer, and performing plasma processing for the TiSiN layer so as to remove impurities contained in the TiSIN layer. [0014] Preferably, an Si layer may be deposited, instead of the Si layer. [0015] The SiH.sub.4 layer may be preferably deposited using an SiH.sub.4 gas. [0016] Further, the Si layer may be preferably deposited using the SiH.sub.4 gas. [0017] Preferably, the precursor layer may be formed by any one of a Tetrakis DiMethyl Amido Titanium (TDMAT) layer, a Tetrakis DiEthyl Amido Titanium (TDEAT) layer and a TiCl.sub.4 layer. [0018] Particularly, the TiSiN layer having the atomic layer thickness is formed by reacting the precursor layer by thermal decomposition at a temperature ranging from 350 to 450.quadrature.. [0019] Preferably, the TiSiN layer may be plasma processed so as to remove CH based impurities contained in the TiSIN layer. [0020] Specifically, the TiSIN layer may be plasma processed under any one atmosphere of a nitrogen gas and a hydrogen gas, or an ammonia gas. [0021] Preferably, the opening may be formed into any one of a contact hole and a via hole. Continue reading about Method for forming barrier metal of semiconductor device... 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