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  Method for fabricating semiconductor deviceUSPTO Application #: 20070202666Title: Method for fabricating semiconductor device Abstract: After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface. (end of abstract) Agent: Mcdermott Will & Emery LLP - Washington, DC, US Inventors: Hideo Nakagawa, Masaru Sasago, Masayuki Endo, Yoshihiko Hirai USPTO Applicaton #: 20070202666 - Class: 438478000 (USPTO) Related Patent Categories: Semiconductor Device Manufacturing: Process, Formation Of Semiconductive Active Region On Any Substrate (e.g., Fluid Growth, Deposition) The Patent Description & Claims data below is from USPTO Patent Application 20070202666. Brief Patent Description - Full Patent Description - Patent Application Claims
RELATED APPLICATIONS [0001] The present application is a Continuation of U.S. application Ser. No. 10/399,755, filed on Apr. 22, 2003, which claims priority of Japanese Application No. 2000-350934 filed Nov. 17, 2000, the contents of which are hereby incorporated by reference. [0002] 1. Technical Field [0003] The present invention relates to a method for fabricating a semiconductor device and, particularly, to a method for forming a film with a planar surface on a substrate. [0004] 2. Background Art [0005] In recent years, semiconductor devices have been fabricated by defining feature sizes as small as around 100 nm or less through miniaturization using lithographic technology which employs, as exposing light, a beam at a wavelength of about 100 nm or less. [0006] In such lithographic technology using short-wavelength light, a focal depth is extremely lowered so that it is inevitable to constantly keep planar a surface of a film formed on a substrate. In fabricating a next-generation semiconductor device (100 nm or less in feature size), therefore, the technology for planarizing the film on the substrate is significantly important. In the present specification, a substrate is defined as a substrate on which a semiconductor device is formed such as a semiconductor substrate, a liquid crystal substrate (LCD), or the like. [0007] At present, CMP (Chemical Mechanical Polishing) is main-stream technology for planarizing a film in a device ranging in size from 0.13 .mu.m to 0.25 .mu.m. There has also been proposed a method for forming a planar film (planarized film) by laminating two films that have been formed preliminarily. [0008] The description of the former CMP technology will be omitted since it has been well known. Instead, a description will be given herein below to a method for forming a planar film by laminating two films disclosed in, e.g., Japanese Laid-Open Patent Publication No. HEI 10-32198. [0009] First, as shown in FIG. 20(a), a semiconductor device is constructed on a substrate 101 through a microfabrication process performed with respect thereto so that a stepped layer 102 is formed. Hereinafter, the substrate 101 formed with the stepped layer 102 will be termed a stepped substrate (101, 102). [0010] Then, a plate 104 to which a film 103 formed as a sheet has been adhered preliminarily is disposed such that the sheet-like film 103 and the stepped layer 102 are opposed to each other. [0011] Next, as shown in FIG. 20(b), the plate 104 formed with the sheet-like film 103 and the stepped substrate (101, 102) are brought closer to each other and pressed against each other with the application of heat. [0012] Next, as shown in FIG. 20(c), only the plate 104 is peeled off, while the sheet-like film 103 is left on the stepped substrate (101, 102). [0013] As a result, the sheet-like film 103 with a planar surface is formed on the stepped substrate (101, 102), as shown in FIG. 20(d). In FIG. 20(d), 105 denotes an unburied portion resulting from a depressed portion with a high aspect ratio formed between interconnect patterns which has remained unfilled. [0014] However, the conventional method for fabricating a semiconductor device has the problem that a global step (a difference in height from the substrate surface between locations at a distance), e.g., a step between the points A and B in FIG. 20(d) occurs, though a step in a dense pattern portion adjacent the point A is removed and the film 103 can be planarized. [0015] If the spacing between the interconnect patterns, i.e., the spacing between step patterns is 100 nm or less, the aspect ratio of a depressed portion formed between the step patterns is increased so that the depressed portion is not filled consistently. [0016] Although the use of the CMP technology prevents the occurrence of the problem that a depressed portion with a high aspect ratio remains unfilled, the essential problem that the global step cannot be suppressed remains unsolved. DISCLOSURE OF THE INVENTION [0017] In view of the foregoing, it is therefore an object of the present invention to allow the formation of a film without a global step, having a planar surface across the entire substrate, and capable of consistently filling a depressed portion with a high aspect ratio. [0018] To attain the object, a first method for fabricating a semiconductor device according to the present invention comprises: a film forming step of supplying a material with fluidity to a surface of a substrate to form a film with fluidity; a planarizing step of pressing the film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the film with fluidity; and a solidifying step of solidifying the film with fluidity having the surface planarized. [0019] Since the first method for fabricating a semiconductor device forms the film with fluidity (fluid film) on the surface of the substrate, planarizes the fluid film by pressing the fluid film by the planar pressing surface of the pressing member, and solidifies the fluid film having the planarized surface, a global step does not occur and a depressed portion with a high aspect ratio is filled completely so that an unburied portion is not formed. [0020] In the first method for fabricating a semiconductor device, the pressing surface of the pressing member preferably has a hydrophobic property. [0021] The arrangement allows easy removal of the pressing member from the solidified film so that a planar film with a smaller number of defects is formed. [0022] In the first method for fabricating a semiconductor device, the material with fluidity is preferably an insulating material. Continue reading... Full patent description for Method for fabricating semiconductor device Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Method for fabricating semiconductor device patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. 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