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  Method and apparatus of growing silicon single crystal and silicon wafer fabricated therebyUSPTO Application #: 20080053365Title: Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby Abstract: Disclosed is a method of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(ΔTmax−ΔTmin)/ΔTmin}×100≦10, wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal. (end of abstract)
Agent: Grossman, Tucker, Perreault & Pfleger, PLLC - Manchester, NH, US Inventor: Hyon-Jong Cho USPTO Applicaton #: 20080053365 - Class: 117013000 (USPTO) Related Patent Categories: Single-crystal, Oriented-crystal, And Epitaxy Growth Processes; Non-coating Apparatus Therefor, Processes Of Growth From Liquid Or Supercritical State, Having Pulling During Growth (e.g., Czochralski Method, Zone Drawing)
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