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Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants   

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Abstract: Methods of forming semiconductor devices with a layered structure of thin and well defined layer of activated dopants, are disclosed. In a preferred method, a region in a semiconductor substrate is amorphized, after which the region is implanted with a first dopant at a first doping concentration. Then a solid phase epitaxy regrowth step is performed on a thin layer of desired thickness of the amorphized region, in order to activate the first dopant only in this thin layer. Subsequently, a second dopant is implanted in the remaining amorphous region at a second doping concentration. Subsequent annealing of the substrate activates the second dopant only in said remaining region, so a very abrupt transition between dopant characteristics of the thin layer with first dopant and the region with the second dopant is obtained. ...

Agent: Knobbe Martens Olson & Bear LLP - Irvine, CA, US
Inventor: Radu Catalin Surdeanu
USPTO Applicaton #: #20070267660 - Class: 257213000 (USPTO) - 11/22/07 - Class 257 
Related Terms: Annealing   Doping   Well Defined   
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Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Field Effect Device
The Patent Description & Claims data below is from USPTO Patent Application 20070267660, Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants.

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Annealing   Doping   Well Defined   


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