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  Method and apparatus for fabricating nanostructure multi-element compoundUSPTO Application #: 20080107826Title: Method and apparatus for fabricating nanostructure multi-element compound Abstract: A method and an apparatus for fabricating a multi-element compound nanostructure are provided. The method includes steps of providing a substrate in a chamber, providing a particle-beam having plural first particles, providing a particle source having plural second particles to fill the chamber therewith and focusing the particle-beam on the substrate and depositing the first particles with the second particles on the substrate to form the multi-element compound nanostructure. In comparison with the conventional ones, the provided method is more simplified and has a great potentiality for being applied. (end of abstract) Agent: Volpe And Koenig, P.c. - Philadelphia, PA, US Inventors: Jyh Shin Chen, Sheng-Yuan Chen, Yi-Chiuen Hu, Shao-Chang Cheng, Hsiao-yu Chou USPTO Applicaton #: 20080107826 - Class: 427595 (USPTO) The Patent Description & Claims data below is from USPTO Patent Application 20080107826. Brief Patent Description - Full Patent Description - Patent Application Claims
FIELD OF THE INVENTION [0001]The present invention relates to a method and an apparatus for fabricating a nanostructure, and more particularly to a method and an apparatus for fabricating a multi-element compound nanostructure. BACKGROUND OF THE INVENTION [0002]Recently, the development of the nano-technology attracts much attention and brings a great amount of demands and improvements for the relevant techniques. Techniques for fabricating and analyzing various nano structures are also highly improved accordingly. However, people still know little about the physical properties of a material with a nano-scaled structure and still keep making more and more efforts therefor, while they have known much about a material with an atomic-scaled structure as well as a general-sized material. [0003]While the scale of the material is reduced to a level of nanometer, which is called a "nano-material" hereafter, the physical and chemical properties thereof are completely different from those of the typical bulk due to the quantum confinement effect and the improving surface effect. Therefore, the essential properties of the material, such as the melting point, the color, the optical property, the electrical property and the magnetic property, are different if the size and the shape of the material are changed, even though the composition thereof remains unchanged. [0004]The compound semiconductor is the most important material in the optoelectronic application, which is composed of different components having different gaps so as to form a quantum well thereof. The carrier mobility and the photo efficiency of the compound semiconductor could be enhanced since the threshold current thereof is reduced by the quantum well. [0005]The optoelectronic compound semiconductor is typically fabricated by means of the epitaxy techniques including the liquid-phase epitaxy (LPE), the molecular beam epitaxy (MBE) and the metalorganic vapor-phase epitaxy (MOVPE), which may make the fabricated compound semiconductor have different optoelectronic properties. The typical principle adopted in the epitaxy technique relates to the atom stacking. More specifically, the compound semiconductor relates to a specific structure formed by stacking several materials whose lattice constants are different on a common substrate. While forming a compound semiconductor, the problem of lattice mismatch therefor should be seriously taken into considered, and hence a "system" having different materials of similar lattice constants, such as the AlGaAs/GaAs system and the InGaAsP/InP system, is preferably applied. [0006]Among the mentioned epitaxy techniques, MOVPE is the most typical one which has gradually replaced the prior LPE and MBE techniques. The principle adopted in MOVPE is simple, but the processing steps thereof are quite complicated. Gaseous compounds of the III-V group, so-called precursors, are needed as starting materials and fed into the reactor with the aid of a carrier gas. The carrier gas flow and the feeding period thereof are controllable for reducing the growth rate of the compound semiconductor, so as to perform a desired epitaxy growth. In general, MOVPE is suitable for mass production, but it is difficult to be improved due to the complexity thereof. [0007]In order to enhance the performance of the optoelectronic devices and improve the fabrication of novel materials therefor, a great effort has been made in researching the quantum structure of the multi-element compound, such as the quantum dots and the quantum wires, in which the low dimensional quantum confinement structure thereof makes it possible to realize the optoelectronic device for the high speed and high performance applications. As for the optoelectronic device, there are various processes for fabricating the multi-element compound, which include the lithography and the ball-milling process in addition to the mentioned epitaxy growth. Alternatively, MBE and the vapor phase deposition which adopts the catalyst-template Stranski-Krastanov growth mode are also applicable for fabricating the multi-element compound for the optoelectronic device. However, all of the mentioned processes are extremely complicated and difficult to be performed. [0008]In addition to the problem of complication, the mentioned processes are still disadvantageous because additional processes are always necessary therefor and the growth position of the quantum structure is unable to be precisely controlled therethrough. [0009]In order to overcome the above drawbacks in the processes according to the prior art, the present invention provides a novel method and apparatus for fabricating a multi-element compound nanostructure. In comparison with the conventional ones, the provided method is more simplified and has a great potentiality for being applied. SUMMARY OF THE INVENTION [0010]In accordance with a first aspect of the present invention, a method for fabricating a multi-element compound nanostructure is provided. The method includes steps of providing a substrate in a chamber, providing a particle-beam having plural first particles, providing a particle source having plural second particles to fill the chamber therewith and focusing the particle-beam on the substrate and depositing the first particles with the second particles on the substrate to form the multi-element compound nanostructure. [0011]Preferably, the method further includes a step of heating the substrate. [0012]Preferably, the substrate is heated to a growth temperature of the multi-element compound nanostructure. [0013]Preferably, the method further includes a step of scanning the substrate for a growth position of the multi-element compound nanostructure via an electron-beam. [0014]Preferably, the substrate is patterned via the electron-beam. [0015]Preferably, the chamber is in vacuum. [0016]Preferably, the method further includes a step of drawing out and accelerating the particle beam via a high voltage. [0017]Preferably, the particle beam is a metal ion-beam. [0018]Preferably, the metal ion-beam is one of a liquidized metal ion-beam and a vaporized metal ion-beam. [0019]Preferably, the particle source is an atom source. [0020]Preferably, the atom source is a vaporized atom source. [0021]Preferably, the particle-beam is focused via one of an electromagnetic lens and an optical lens with an objective. Continue reading... Full patent description for Method and apparatus for fabricating nanostructure multi-element compound Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Method and apparatus for fabricating nanostructure multi-element compound patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. 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