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  Mesoporous film, laser emission assembly, and process for producing mesoporous filmUSPTO Application #: 20070023289Title: Mesoporous film, laser emission assembly, and process for producing mesoporous film Abstract: A novel structure is provided in which mesopores are oriented. Further a mesoporous film is provided which has two-branched diffraction peaks at intervals or 180° according to in-plane X-ray diffraction. (end of abstract) Agent: Fitzpatrick Cella Harper & Scinto - New York, NY, US Inventors: Hirokatsu Miyata, Masatoshi Watanabe, Takashi Noma, Kazuyuki Kuroda, Takashi Suzuki, Ayumu Fukuoka USPTO Applicaton #: 20070023289 - Class: 204515000 (USPTO) Related Patent Categories: Chemistry: Electrical And Wave Energy, Non-distilling Bottoms Treatment, Electrophoresis Or Electro-osmosis Processes And Electrolyte Compositions Therefor When Not Provided For Elsewhere, Inorganic Siliceous Or Calcareous Material Prepared, Separated, Or Treated (e.g., Clay, Earth, Concrete, Asbestos, Glass, Etc.) The Patent Description & Claims data below is from USPTO Patent Application 20070023289. Brief Patent Description - Full Patent Description - Patent Application Claims
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a mesoporous film, specifically to a mesoporous film useful as a catalyst carrier, an adsorbent, a separator, and the like. The present invention relates also to a process for producing the mesoporous film. More specifically, the present invention relates to a technique for controlling orientation of fine pores formed by self-organization macroscopically in a mesoporous film by utilizing structural anisotropy of a surface of a substrate; a technique for controlling orientation of polymer molecule chains by utilizing the oriented pores; and a technique for controlling a physical property such as light emission. [0003] 2. Related Background Art [0004] Semiconductor working techniques are progressing remarkably rapidly, and will achieve working accuracy of 100 nm very soon. Miniaturization of semiconductor elements enables increase of the switching speed and decrease of the power consumption. Therefore, the miniaturization of the semiconductor elements is indispensable for high-performance LSI. Until now, the integration degree of the semiconductor elements is increasing linearly with the year. However, the working by conventional photolithography will reach a working limit in near future, so that development of a novel process to replace the conventional photolithography is wanted urgently. [0005] A process utilizing self-organization is attracting attention as a working process exceeding the working limit of conventional photolithography. In this process, a fine structure is formed spontaneously by utilizing an inherent property of a material. Various types of fine structures can be formed by self-organization, including structures of layer types, fiber types, column types, sphere types, and porous material types. Promising uses are suggested for the fine structure. Among them, porous thin films formed on a substrate are useful in various industrial application fields and are most promising. [0006] One of the porous thin films attracting attention nowadays is a thin alumina nanohole film formed by anodization of aluminum. In the film, fine pores are formed, perpendicular to the face of the thin aluminum film by anodization under certain conditions, by focusing the electric field. Various applications are proposed for the alumina nanohole films, including electron-releasing elements, and recording mediums having magnetic substance introduced therein. [0007] Another type of materials attracting attention are mesoporous thin films prepared by a sol-gel process or a like process by using micelles of a surfactant as a template. These films can be formed to have a regular pore structure by a simple process like dip coating. This technique is described comprehensively in Angewandte Chemie International Edition, vol.38, pp. 56-57. Of the mesporous films, the most stable and industrially useful are mesoporous silica thin films. Many applications thereof are proposed, including catalysts, and light-emitting materials. [0008] The aforementioned mesoporous films have highly regular pore structure locally, but have generally no long-period structural regularity in planes, with pores directed at random macroscopically in planes. Several methods have been proposed regarding the orientation control of the pores in a macroscopic scale. [0009] The aforementioned methods for controlling the pore orientation have problems. The method described in Chemistry of Materials: vol.9, pp 1505-1507 utilizes shear stress caused by flow of a reaction solution for control of pore orientation. However, this method cannot achieve high conrollability in the pore orientation, and cannot readily form a uniform film over a large area, being not suitable inherently for an industrial process. [0010] In another method described in U.S. Pat. No. 6,004,444, an elastic resin stamp having a fine capillary is pressed against a substrate and a reaction solution is allowed to flow through a groove in the stamp by electro-osmosis. In this method, the pore orientation is controlled by shear stress in the solution flowing through the narrow capillary and formation of a mesoporous silica film is promoted by the generated joule heat. In this method, the mesoporous silica film should have a fine pattern for control of the pore orientation, and the uniform orientation over a large area cannot be achieved in principle. [0011] In both of these two methods, since the control of the pore orientation direction depends on the flow of the reaction solution, the orientation control is limited to one direction. [0012] The present invention intends to provide a method for controlling arbitrarily the orientation direction of pores in a mesoporous silica thin film beyond the limit of the conventional techniques. The present invention intends also to provide a novel mesoporous film having pores in a controlled pore orientation. SUMMARY OF THE INVENTION [0013] The present invention provides a simple method for controlling the direction of pores in a mesoporous material throughout the entire substrate. The present invention enables orientation of the pores, not in one direction, but in two independent directions. [0014] According to an aspect of the present invention, there is provided a mesoporous film formed on a substrate face and having tubular mesopores arranged in a state of a honeycomb-packed pore structure, wherein the substrate face has a structural anisotropy, the mesopores are controlled to orient in two directions in planes, and the tubular mesopores are arranged parallel to each other and parallel to the substrate face. [0015] In the mesoporous film, micelles of amphiphillic molecules are preferably filled in the mesopores. [0016] The wall of the mesopores is preferably formed from a material containing silica. [0017] The size distribution of the mesopores measured by nitrogen gas adsorption preferably has a single maximum, and 60% or more of the mesopores are distributed in the size distribution range of breadth of 10 nm. [0018] In the mesoporous film, of the two in-plane orientation directions, the region of a first orientation direction and the region of a second orientation direction are preferably and substantially the same in area. [0019] The in-plane orientation direction of the mesopores is preferably given by a rubbing treatment, and is controlled by the structural anisotropy of the face of the substrate in two directions, and the direction of the mesopore orientation is the same as the direction of the rubbing treatment. The in-plane orientation of the mesopores is preferably controlled to two directions by a Langmuir-Blodgett film of a polymer compound having structural anisotropy formed on the face of the substrate, and the orientation direction of the mesopores is the same as the direction of lifting-up of the substrate in the process of the Langmuir-Blodgett film formation. [0020] In the mesoporous film, a conjugated polymer compound is preferably held in a part or the entire of the mesopores. [0021] According to another aspect of the present invention, there is provided a laser emission assembly, comprising the mesoporous film just mentioned above. [0022] According to still another aspect of the present invention, there is provided a laser emission assembly, constituted of the mesoporous film just mentioned above and a medium having a refractivity nearly the same as the refractivity of the substrate carrying the mesoporous film. Continue reading... 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