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Manufacturing method of semiconductor chipManufacturing method of semiconductor chip description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20080096322, Manufacturing method of semiconductor chip. Brief Patent Description - Full Patent Description - Patent Application Claims
BACKGROUND OF THE INVENTION [0001]The present invention relates to a method of manufacturing a semiconductor chip such as a sensor chip formed with an adhesive film at its back surface. [0002]A conventional semiconductor package is formed in the following manner. Paste comprised of a polyimide resin having thermal plasticity is applied onto a back surface of a semiconductor wafer by a spin coat method and thereafter dried by heating to form a polyimide resin layer. The semiconductor wafer in which a UV tape reduced in adhesive power due to the application of ultraviolet rays is attached onto the polyimide resin layer is divided by dicing to form pieces or fractions. The pieces are taken or peeled off from the UV tape to form semiconductor chips each formed with an adhesive film comprised of the polyimide resin layer at its back surface. The polyimide resin layer of each semiconductor chip is pressed against a die pad used as a bonding plate, and the die pad is heated by a heat stage to bond each semiconductor chip onto the die pad (refer to, for example, a patent document 1 (Japanese Unexamined Patent Publication No. Hei 8(1996)-236554 (Paragraphs 0034-0038 in page 5 and FIGS. 2 and 3)). [0003]In general, spatial apertures or openings are formed at a back surface of a semiconductor wafer in order to form space around a plumb portion of each sensor chip used as a semiconductor chip provided in a semiconductor acceleration sensor. [0004]In the related art referred above, however, the paste comprised of the polyimide resin used as a dicing material is applied onto the back surface of the semiconductor wafer by the spin coat method and thereafter dried by heating to form the adhesive film. Therefore, there is a fear that in the case of the semiconductor wafer having the openings at its back surface as in the semiconductor wafer for forming the sensor chips each used for the semiconductor acceleration sensor, the paste is intruded into the space through the openings, and thereafter, the plumb portions or the like are fixed when the paste is dried by heating, [0005]Therefore, there are problems in that when the dicing material is applied to a die bond portion of a dicing member using an applying nozzle connected to a mechanical or air-pump type dispenser, and the back surface of each sensor chip is placed thereon, non-uniformity is easy to occur in the thickness of a coating film upon application of the dicing material, and the characteristic of the semiconductor acceleration sensor changes due to distortion of the sensor chip caused by the deviation of thermal expansion, thereby degrading its quality. SUMMARY OF THE INVENTION [0006]The present invention has been made to solve the above problems. It is an object of the present invention to provide means for forming an adhesive film having a uniform thickness on a back surface of each of semiconductor chips formed by fractionalizing a semiconductor wafer. [0007]According to one aspect of the present invention, for attaining the above object, there is provided a method of manufacturing a semiconductor chip formed with an adhesive film at a back surface thereof, comprising the steps of applying a die bond material onto a dummy wafer by a spin coat method to form a coating film, bonding a back surface of a semiconductor wafer onto the coating film of the die bond material formed over the dummy wafer, performing fractionalization for dividing the semiconductor wafer to form pieces, and peeling off the pieces from above the dummy wafer and transferring the coating film of the die bond material to back surfaces of the pieces to form adhesive films. [0008]Thus, the present invention can obtain an advantageous effect in that a coating film of a die bond material having a uniform thickness, which is formed on a dummy wafer, is transferred when pieces or fractions are peeled off, thereby making it possible to form an adhesive film of a uniform thickness on a back surface of each semiconductor chip. BRIEF DESCRIPTION OF THE DRAWINGS [0009]While the specification concludes with claims particularly pointing out and distinctly claiming the subject matter which is regarded as the invention, it is believed that the invention, the objects and features of the invention and further objects, features and advantages thereof will be better understood from the following description taken in connection with the accompanying drawings in which: [0010]FIG. 1 is an explanatory diagram showing an upper surface of a semiconductor acceleration sensor illustrative of an embodiment of the present invention; [0011]FIG. 2 is an explanatory diagram illustrating a section taken along sectional line A-A of FIG. 1; and [0012]FIG. 3 is an explanatory diagram showing a method of manufacturing sensor chips employed in the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [0013]A preferred embodiment of a semiconductor chip manufacturing method according to the present invention will hereinafter be described with reference to the accompanying drawings. [0014]FIG. 1 is an explanatory diagram showing an upper surface of a semiconductor acceleration sensor illustrative of an embodiment, FIG. 2 is an explanatory diagram showing a section taken along sectional line A A of FIG. 1, and FIG. 3 is an explanatory diagram illustrating a method of manufacturing semiconductor chips employed in the embodiment, respectively. [0015]Incidentally, FIG. 1 is shown in a cover-free state. [0016]In FIGS. 1 and 2, reference numeral 1 indicates the semiconductor acceleration sensor used as a semiconductor package. [0017]Reference numeral 2 indicates a case which is a measure-shaped member fabricated by ceramic or the like having a concave portion 4 formed with an intermediate stage portion 3. A plurality of internal terminals 7 electrically connected to external terminals 6 for taking out signals to the outside formed at a back surface 2b of the case 2 through plugs 5 having conductivity, which extend through the intermediate stage portion 3 in the direction of depth of the concave portion 4 from a step or steplike surface 3a of the intermediate stage portion 3, are provided at the step surface 3a. [0018]Reference numeral 9 indicates a sensor chip used as a semiconductor chip. It is a sensor chip which outputs acceleration components of three axes comprising an X axis, a Y axis and a Z axis orthogonal to one another, using piezoelements 10 used as measuring elements. Reference numeral 11 indicates a support portion which is a rectangular frame body comprised of silicon (Si), which is formed at the edge portion of the sensor chip 9. A plumb portion 13 suspended by flexible portions 12 formed of thin silicon, which are disposed crosswise, is swingably accommodated inside the support portion 11. [0019]The piezoelements 10 are respectively formed at the flexible portions 12 supported at the respective centers of the four sides of the support portion 11. Pads 15 each formed of a conductive material such as aluminum (Al) are formed at their corresponding surfaces of the opposite two sides of the support portion 11, which are located on the same sides as the surfaces of the flexible portions 12, formed with the piezoelements 10 (the surface of the support portion 11 on the formed side of each pad 15 is called "the front surface of the sensor chip 9" and its opposite side is called "its back surface"). [0020]The piezoelements 10 formed at the flexible portions 12 are respectively internally connected to the predetermined pads 15 formed in the support portion 11. 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