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07/26/07 - USPTO Class 148 |  144 views | #20070169853 | Prev - Next | About this Page  148 rss/xml feed  monitor keywords

Magnetic sputter targets manufactured using directional solidification

USPTO Application #: 20070169853
Title: Magnetic sputter targets manufactured using directional solidification
Abstract: A sputter target includes a metal alloy having a target surface, a rear surface and a thickness between the target and rear surfaces. The target surface and rear surface are outer surfaces of the metal alloy. The metal alloy has a thickness direction substantially along the thickness. The target surface is substantially normal to the thickness direction. The metal alloy has a single substantially homogenous microstructural zone across substantially the entire thickness. The metal alloy further includes dendrites. The dendrites at the target surface are oriented along substantially one direction, and the dendrites at a center plane of the metal alloy are oriented along substantially the same one direction. A sputter target may include a metal alloy which is a cobalt (Co) based, and may have a [0001] hexagonal close-packing (HCP) direction oriented substantially normal to the target surface. The sputter target may be formed by directional solidification at near-equilibrium temperature conditions by withdrawing the metal alloy at a first rate through a temperature gradient. The sputter target is for forming one or more magnetic layers on a substrate for, among other purposes, data storage. (end of abstract)



Agent: Mcdermott Will & Emery LLP - Irvine, CA, US
Inventors: Bernd Kunkel, David Long, Abdelouahab Ziani, Anirban Das, Jun Hui
USPTO Applicaton #: 20070169853 - Class: 148425000 (USPTO)

Related Patent Categories: Metal Treatment, Stock, Cobalt Base

Magnetic sputter targets manufactured using directional solidification description/claims


The Patent Description & Claims data below is from USPTO Patent Application 20070169853, Magnetic sputter targets manufactured using directional solidification.

Brief Patent Description - Full Patent Description - Patent Application Claims
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FIELD OF THE INVENTION

[0001] The present invention generally relates to sputter targets and, in particular, relates to sputter targets with improved microstructural homogeneity and pass through flux ("PTF"), and to the products produced therefrom such as thin film magnetic media.

BACKGROUND OF THE INVENTION

[0002] Cathodic sputtering processes are widely used for the deposition of thin films of material onto desired substrates. In particular, thin film magnetic media can be manufactured using a cathodic sputtering process. Concomitant with the ever increasing demand for improved magnetic storage media has been an increasing need for thin films of magnetic media with improved magnetic characteristics and uniformity. To obtain thin films with these desired attributes, it is necessary to use sputter targets with improved microstructural homogeneity.

[0003] One approach to improving the microstructural homogeneity of sputter targets is a process using vacuum induction melting and ingot solidification, followed by thermo-mechanical working. These techniques are limited in effectiveness due to the increased manufacturing time required by thermo-mechanical working processes, such as rolling and heat treatment. Moreover, these processes may significantly limit the yield of sputter targets composed of low-ductility alloys, as the risk of ingot cracking during the thermo-mechanical working is higher with these difficult-to-roll alloys. Further, any deviation from the rolling and heat treatment process window can result in un-precedent microstructural non-homogeneity across the target thickness (e.g., along the sputter direction).

[0004] Additionally, for adequate material removal and deposition during the cathodic sputtering process, the PTF of the applied magnetic field through the sputter target is critical. A lower PTF necessitates a higher voltage/power compensation to sputter the target and hence limit its maximum utilization. The techniques to improve PTF made by standard solidification practices followed by thermo-mechanical working discussed above suffer from drawbacks of high expense, long processing time, and low yield.

[0005] What is needed is a sputter target with improves microstructural homogeneity and PTF. The present invention satisfies this need and provides other advantages.

SUMMARY OF THE INVENTION

[0006] In accordance with the present invention, a sputter target is provided that has improved microstructural homogeneity and higher PTF than was previously possible. The sputter target is formed by directionally solidifying a metal alloy at near-equilibrium temperature conditions by withdrawing the metal alloy at a first rate through a temperature gradient. A sputter target thus manufactured has a single substantially homogenous microstructural zone substantially across its entire thickness.

[0007] According to one embodiment, the present invention is a sputter target including a metal alloy. The metal alloy has a target surface, a rear surface and a thickness between the target surface and the rear surface. The target surface and rear surface are outer surfaces of the metal alloy. The metal alloy has a single substantially homogenous microstructural zone across substantially the entire thickness.

[0008] According to another embodiment, a sputter target of the present invention includes a metal alloy having a target surface, a rear surface and a thickness between the target surface and the rear surface. The target surface and rear surface are outer surfaces of the metal alloy. The metal alloy has dendrites. The dendrites at the target surface are oriented along substantially one direction, and the dendrites at a center plane of the metal alloy are oriented along substantially the same one direction.

[0009] According to another embodiment, a sputter target of the present invention includes a metal alloy which is a cobalt (Co) based alloy. The metal alloy has a target surface, a rear surface and a thickness between the target surface and the rear surface. The target surface and rear surface are outer surfaces of the metal alloy. The target surface is substantially normal to the thickness direction. A [0001] hexagonal close-packing (HCP) direction of the metal alloy is oriented substantially normal to the target surface.

[0010] Additional features and advantages of the invention will be set forth in the description below, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

[0011] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The accompanying drawings, which are included to provide further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings:

[0013] FIG. 1 depicts a sputter target according to one embodiment of the present invention;

[0014] FIG. 2 depicts a partial view of a target surface of a sputter target according to one aspect of the present invention;

[0015] FIG. 3 depicts a partial cross-sectional view of a sputter target according to another aspect of the present invention;

[0016] FIG. 4 depicts a partial view of a target surface of a sputter target according to yet another aspect of the present invention;

[0017] FIG. 5 depicts a partial view of a center plane of a sputter target according to yet another aspect of the present invention;

[0018] FIG. 6 illustrates a directionally-solidified metal alloy according to yet another aspect of the present invention;

[0019] FIG. 7 illustrates a partial view of a target surface of a sputter target;

[0020] FIG. 8 illustrates a partial view of a center plane of a sputter target; and

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