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Low selectivity deposition methodsRelated Patent Categories: Semiconductor Device Manufacturing: Process, Coating With Electrically Or Thermally Conductive Material, To Form Ohmic Contact To Semiconductive Material, Contacting Multiple Semiconductive Regions (i.e., Interconnects), Multiple Metal Levels, Separated By Insulating Layer (i.e., Multiple Level Metallization)Low selectivity deposition methods description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20070190775, Low selectivity deposition methods. Brief Patent Description - Full Patent Description - Patent Application Claims
TECHNICAL FIELD [0001] This invention relates to methods of atomic layer deposition and methods of low selectivity chemical vapor deposition. BACKGROUND OF THE INVENTION [0002] Atomic layer deposition (ALD) is recognized as a deposition technique that forms high quality materials with minimal defects and tight statistical process control. Even so, it is equally recognized that ALD can have limited application. In some circumstances, the theoretically expected quality of an ALD layer is not achieved. [0003] It can be seen that a need exists for an ALD method that forms a layer without introducing intolerable defects into the material. BRIEF DESCRIPTION OF THE DRAWINGS [0004] Preferred embodiments of the invention are described below with reference to the following accompanying drawings. [0005] FIG. 1 shows a cross-sectional fragmentary view of a deposition substrate at one processing step in accordance with an aspect of the invention. [0006] FIG. 2 shows the deposition substrate of FIG. 1 at a processing step subsequent to that shown in FIG. 1. [0007] FIG. 3 shows the deposition substrate of FIG. 1 at an alternative processing step subsequent to that shown in FIG. 1. [0008] FIG. 4 shows the deposition substrate of FIG. 1 at a processing step subsequent to that shown in FIG. 3. [0009] FIG. 5 shows a cross-sectional fragmentary view of a semiconductive wafer portion at a processing step in accordance with an aspect of the invention. [0010] FIG. 6 shows the semiconductive wafer of FIG. 5 at a processing step subsequent to that shown in FIG. 5. SUMMARY OF THE INVENTION [0011] One aspect of the invention provides a deposition method that includes forming a nucleation layer over a substrate, forming a layer of a first substance at least one monolayer thick chemisorbed on the nucleation layer, and forming a layer of a second substance at least one monolayer thick chemisorbed on the first substance. A chemisorption product of the first and second substance may include silicon and nitrogen, or aluminum and oxygen, or tantalum and oxygen. Also, the nucleation layer may comprise silicon nitride, aluminum oxide, or tantalum oxide. A thickness of the nucleation layer may be less than about 20 Angstroms. [0012] In another aspect of the invention, a low selectivity deposition method includes forming a first part of a nucleation layer on a first surface of a substrate and forming a second part of a nucleation layer on a second surface of a substrate. A deposition layer may then be formed on the first and second parts of the nucleation layer substantially non-selectively on the first part of the nucleation layer compared to the second part. Substantially non-selective deposition occurs even though the first and second surfaces of the substrate exhibit a property of the deposition layer forming less readily on the first surface compared to the second surface. The deposition layer may comprise a monolayer of a first chemisorbed specie. The deposition layer may be formed by chemical vapor deposition or atomic layer deposition. The first and second part of the nucleation layer may be formed simultaneously. Also, the nucleation layer may form substantially non-selectively on the first surface of the substrate compared to the second surface. Further, a thickness of the first part of the nucleation layer may be greater than 50% of a thickness of the second part, or even greater than 80% of the thickness of the second part. The first surface of the substrate may exhibit a property of chemisorbing the first specie at a slower rate compared to the second surface. [0013] In another aspect, a deposition method includes simultaneously forming a first part of a nucleation layer on an insulative oxide material and a second part of the nucleation layer on a semiconductive material. The nucleation layer may be contacted with an initiation precursor. An initiation layer at last one monolayer thick may be formed on the first and second parts of the nucleation layer substantially non-selectively on the first part of the nucleation layer compared to the second part. [0014] In another deposition method, a nucleation layer comprising silicon and nitrogen may be formed substantially non-selectively on a first and a second surface of a substrate. A monolayer of a first substance may be chemisorbed on the nucleation layer. A monolayer of a second substance may be chemisorbed on the first substance, wherein a chemisorption product of the first and second substances comprises silicon nitride. [0015] In a still further aspect, a deposition method may include atomic layer depositing a nucleation substance chemisorbed on a first surface and a second surface of a substrate substantially non-selectively. The first surface may exhibit a property of chemisorbing an atomic layer deposition precursor at a slower rate compared to the second surface. Also, the nucleation substance may exhibit a property of chemisorbing the precursor at an approximately equal rate over the first surface compared to over the second surface. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [0016] This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws "to promote the progress of science and useful arts" (Article 1, Section 8). [0017] Atomic layer deposition (ALD) involves formation of successive atomic layers on a substrate. Such layers may comprise an epitaxial, polycrystalline, amorphous, etc. material. ALD may also be referred to as atomic layer epitaxy, atomic layer processing, etc. Further, the invention may encompass other deposition methods not traditionally referred to as ALD, for example, chemical vapor deposition (CVD), but nevertheless including the method steps described herein. The deposition methods herein may be described in the context of formation on a semiconductor wafer. However, the invention encompasses deposition on a variety of substrates besides semiconductor substrates. [0018] In the context of this document, the term "semiconductor substrate" or "semiconductive substrate" is defined to mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials thereon), and semiconductive material layers (either alone or in assemblies comprising other materials). The term "substrate" refers to any supporting structure, including, but not limited to, the semiconductive substrates described above. [0019] Described in summary, ALD includes exposing an initial substrate to a first chemical specie to accomplish chemisorption of the specie onto the substrate. Theoretically, the chemisorption forms a monolayer that is uniformly one atom or molecule thick on the entire exposed initial substrate. Practically, as further described below, chemisorption might not occur on all portions of the substrate. Nevertheless, such an imperfect monolayer is still a monolayer in the context of this document. The first specie is purged from over the substrate and a second chemical specie is provided to chemisorb onto the first monolayer of the first specie. The second specie is then purged and the steps are repeated with exposure of the second specie monolayer to the first specie. In some cases, the two monolayers may be of the same specie. Also, additional species may be successively chemisorbed and purged just as described for the first and second species. Continue reading about Low selectivity deposition methods... Full patent description for Low selectivity deposition methods Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Low selectivity deposition methods patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. Start now! - Receive info on patent apps like Low selectivity deposition methods or other areas of interest. ### Previous Patent Application: Method of fabricating a semiconductor device Next Patent Application: Method for fabricating a metal-insulator-metal capacitor Industry Class: Semiconductor device manufacturing: process ### FreshPatents.com Support Thank you for viewing the Low selectivity deposition methods patent info. 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