Light modulator with a light-absorbing layer

Title: Light modulator with a light-absorbing layer

Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Integrated Circuit Structure With Electrically Isolated Components

Brief Patent Description - Full Patent Description - Patent Claims

The Patent Description & Claims data below is from USPTO Patent Application 20070138591, Light modulator with a light-absorbing layer.

1. A method of making a spatial light modulator, comprising: providing a first region capable of light generation by modulation and a second region coupled thereto; establishing a sacrificial layer overlying at least a portion of the first region and the second region; removing a portion of the sacrificial layer from an area over the second region, thereby forming an exposed second region; establishing a light-absorbing layer on the exposed second region and on a remaining portion of the sacrificial layer overlying the second region, whereby a portion of the light-absorbing layer is in contact with the exposed second region, and a second portion of the light-absorbing layer is in contact with the remaining portion of the sacrificial layer and is suspended relative to the second region; and removing the remaining portion of the sacrificial layer.

2. The method as defined in claim 1 wherein establishing the light-absorbing layer further comprises: establishing a first layer having a reflectivity characteristic; and establishing a second layer connected to the first layer, the second layer having a reflectivity less than about 75%.

3. The method as defined in claim 2 wherein the first layer has a reflectivity greater than about 75%.

4. The method as defined in claim 2 wherein establishing the light-absorbing layer further comprises: establishing a standoff layer between the first and second layers; and establishing a transparent dielectric layer connected to the second layer.

5. The method as defined in claim 4 wherein the transparent dielectric layer is adapted to function as an anti-reflective coating.

6. The method as defined in claim 1 wherein the first region is a primary light reflective region, and the second region is an incidental light reflective region.

7. The method as defined in claim 1 wherein establishing the light-absorbing layer further comprises: establishing a first layer having a reflectivity less than about 75%; and establishing a tantalum aluminum layer connected to the first layer.

8. The method as defined in claim 7 wherein the light-absorbing layer further comprises a third layer interposed between the first layer and the tantalum aluminum layer.

9. The method as defined in claim 8 wherein the third layer is a standoff layer that has an optical transparency and a thickness so as to absorb at least a portion of the light.

10. A method of making a spatial light modulator, comprising the steps of: providing a substrate, the substrate having a first region and a second region disposed thereon, wherein the first region comprises a pixel, and wherein the second region comprises at least one post and at least one flexure; depositing a sacrificial layer over the pixel, the at least one flexure, and the at least one post; removing a portion of the sacrificial layer disposed on the at least one post, thereby forming a supportive connector region for a light-absorbing layer; depositing a light-absorbing layer on the supportive connector region and on the sacrificial layer disposed on the at least one flexure; and etching a portion of the sacrificial layer disposed on the at least one flexure, whereby a portion of the light-absorbing layer is connected to the at least one post, and a second portion of the light-absorbing layer is suspended relative to the at least one flexure.

11. An integrated circuit, comprising: a semiconductor substrate; a first region disposed on a first portion of the semiconductor substrate; a second region disposed on a second portion of the semiconductor substrate; a passivation layer disposed on the first region and the second region; and a light-absorbing layer disposed on the passivation layer and contacting at least a portion of the second region, the light-absorbing layer including: a first layer; and a second layer connected to the first layer, the second layer having a reflectivity less than about 75%.

12. An integrated circuit, comprising: a semiconductor substrate; a first region disposed on the semiconductor substrate; a second region disposed on the semiconductor substrate; and a light-absorbing layer suspended relative to the second region.

13. The integrated circuit as defined in claim 12 wherein the second region comprises at least one post and at least one flexure.

14. The integrated circuit as defined in claim 12 wherein the light-absorbing layer is in contact with the at least one post and is suspended in indirect contact with the at least one flexure.

15. The integrated circuit as defined in claim 12 wherein the light-absorbing layer includes: a reflective first layer having a reflectivity greater than about 75%; and a second layer connected to the reflective first layer, the second layer having a reflectivity less than about 75%.

16. The integrated circuit as defined in claim 12 wherein the first region is a primary light reflective region, and the second region is an incidental light reflective region.

17. The integrated circuit as defined in claim 15 wherein the second layer comprises at least one of tantalum aluminum alloys, tungsten silicon nitride alloys, tantalum nitride alloys, nickel, nickel alloys, titanium nitride alloys, and mixtures thereof.

18. The integrated circuit as defined in claim 15 wherein the second layer comprises tantalum aluminum.

19. The integrated circuit as defined in claim 15 wherein the second layer is capable of absorbing at least a portion of directed light having a wavelength between 400 and 700 nanometers.

Brief Patent Description - Full Patent Description - Patent Claims

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Industry Class:
Active solid-state devices (e.g., transistors, solid-state diodes)

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