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Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

keyword monitor Monitor "Law Offices Of Charles Guenzer Attn: Applied Materials, Inc." patents

The following is a sampling of recent Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patent applications (USPTO Patent Application #, Patent Title) sorted by month.

April 2008 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20080096376 - Transparent zinc oxide electrode having a graded oxygen content
20080083610 - Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum

March 2008 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20080060938 - Coaxial shafts for radial positioning of rotating magnetron
20080061285 - Metal layer inducing strain in silicon

February 2008 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20080050922 - Chamber recovery after opening barrier over copper
20080029387 - Ganged scanning of multiple magnetrons, especially two level folded magnetrons

December 2007 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20070293058 - Method of laser annealing using two wavelengths of radiation
20070281479 - Process including silo-chloro passivation for etching tungsten silicide overlying polysilicon
20070281477 - Process for etching tungsten silicide overlying polysilicon particularly in a flash memory

September 2007 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20070209925 - Etch and sidewall selectivity in plasma sputtering

August 2007 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20070190266 - Water vapor passivation of a wall facing a plasma

July 2007 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20070151841 - Flexible magnetron including partial rolling support and centering pins

May 2007 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20070114214 - Scanning laser light source
20070102284 - Small scanned magentron
20070095654 - Controlled multi-step magnetron sputtering process

April 2007 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20070079936 - Bonded multi-layer rf window
20070077780 - Process to open carbon based hardmask

March 2007 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20070045103 - Aluminum sputtering while biasing wafer

February 2007 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20070023275 - Controllable target cooling
20070026693 - Method of thermally oxidizing silicon using ozone

January 2007 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20070017798 - Evacuable magnetron chamber
20070020783 - Method of feed forward control of scanned rapid thermal processing
20070012562 - Method and apparatus for sputtering onto large flat panels

December 2006 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20060289305 - Centering mechanism for aligning sputtering target tiles
20060289504 - Scanned rapid thermal processing with feed forward control
20060283703 - Bonding of target tiles to backing plate with patterned bonding agent
20060272935 - Multiple scanning magnetrons

November 2006 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20060266638 - Multiple target tiles with complementary beveled edges forming a slanted gap therebetween
20060266639 - Sputtering target tiles having structured edges separated by a gap
20060251872 - Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof

October 2006 - Law Offices Of Charles Guenzer Attn: Applied Materials, Inc. patents

20060240680 - Substrate processing platform allowing processing in different ambients
20060234458 - Dual wavelength thermal flux laser anneal
20060228818 - Edge temperature compensation in thermal processing particularly useful for soi wafers
20060223315 - Thermal oxidation of silicon using ozone



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