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Law Office Of Robert M. Wallace patentsThe following is a sampling of recent Law Office Of Robert M. Wallace patent applications (USPTO Patent Application #, Patent Title) sorted by month.
February 2011 - Law Office Of Robert M. Wallace patents
20110040435 - Throttle-free transmissionless hybrid vehicle
January 2011 - Law Office Of Robert M. Wallace patents
20110005679 - Plasma uniformity control through vhf cathode ground return with feedback stabilization of vhf cathode impedance
20110005685 - Plasma reactor with uniform process rate distribution by improved rf ground return path
20110006044 - Pyrometer for laser annealing system compatible with amorphous carbon optical absorber layer
20110009999 - Plasma reactor with rf generator and automatic impedance match with minimum reflected power-seeking control
December 2010 - Law Office Of Robert M. Wallace patents
20100319851 - Plasma reactor with feed forward thermal control system using a thermal model for accommodating rf power changes or wafer temperature changes
20100319852 - Capacitivley coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
20100314046 - Plasma reactor with a multiple zone thermal control feed forward control apparatus
20100300621 - Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
20100303680 - Capacitively coupled plasma reactor having very agile wafer temperature control
September 2010 - Law Office Of Robert M. Wallace patents
20100248488 - Pulsed plasma high aspect ratio dielectric process
20100239373 - Soil vapor extraction remediation system with vapor stream separation
20100224322 - Endpoint detection for a reactor chamber using a remote plasma chamber
July 2010 - Law Office Of Robert M. Wallace patents
20100190324 - Reducing photoresist layer degradation in plasma immersion ion implantation
April 2010 - Law Office Of Robert M. Wallace patents
20100103411 - Spectrographic metrology of patterned wafers
20100106444 - Spectrometric metrology of workpieces using a permanent window as a spectral reference
20100106456 - Metrology of thin film devices using an addressable micromirror array
20100096085 - Plasma reactor with a ceiling electrode supply conduit having a succession of voltage drop elements
20100096261 - Physical vapor deposition reactor with circularly symmetric rf feed and dc feed to the sputter target
February 2010 - Law Office Of Robert M. Wallace patents
20100032289 - Method for ultra-uniform sputter deposition using simultaneous rf and dc power on target
January 2010 - Law Office Of Robert M. Wallace patents
20100018648 - Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
20100012029 - Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency rf impedance tuning
20100012480 - Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency rf impedance tuning
December 2009 - Law Office Of Robert M. Wallace patents
20090294061 - Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power rf generator
20090294062 - Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power rf generator
20090294065 - Ceiling electrode with process gas dispersers housing plural inductive rf power applicators extending into the plasma
20090294275 - Method of plasma load impedance tuning by modulation of a source power or bias power rf generator
20090294414 - Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power rf gererator
20090295295 - Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources
20090295296 - Method of plasma load impedance tuning by modulation of an unmatched low power rf generator
20090297404 - Plasma reactor with high speed plasma impedance tuning by modulation of source power or bias power
20090298287 - Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power rf generator
November 2009 - Law Office Of Robert M. Wallace patents
20090280628 - Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking
20090280628 - Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking
20090272492 - Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
20090272492 - Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
20090274590 - Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed
20090274590 - Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed
20090275206 - Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias
20090275206 - Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias
June 2009 - Law Office Of Robert M. Wallace patents
20090159002 - Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
20090159002 - Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
20090159213 - Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
20090159213 - Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
20090159439 - Apparatus for wafer level arc detection at an rf bias impedance match to the pedestal electrode
20090159439 - Apparatus for wafer level arc detection at an rf bias impedance match to the pedestal electrode
20090162260 - Plasma reactor gas distribution plate with radially distributed path splitting manifold
20090162261 - Plasma reactor gas distribution plate having a vertically stacked path splitting manifold
20090162262 - Plasma reactor gas distribution plate having path splitting manifold side-by-side with showerhead
20090162260 - Plasma reactor gas distribution plate with radially distributed path splitting manifold
20090162261 - Plasma reactor gas distribution plate having a vertically stacked path splitting manifold
20090162262 - Plasma reactor gas distribution plate having path splitting manifold side-by-side with showerhead
20090152247 - Fast axis beam profile shaping for high power laser diode based annealing system
20090156011 - Method of controlling cd bias and cd microloading by changing the ceiling-to-wafer gap in a plasma reactor
20090156013 - Method and apparatus for removing polymer from the wafer backside and edge
20090139963 - Multiple frequency pulsing of multiple coil source to control plasma ion density radial distribution
20090142930 - Gate profile control through effective frequency of dual hf/vhf sources in a plasma etch process
May 2009 - Law Office Of Robert M. Wallace patents
20090120367 - Plasma immersion ion implantation reactor with extended cathode process ring
April 2009 - Law Office Of Robert M. Wallace patents
20090097185 - Time-based wafer de-chucking from an electrostatic chuck having separate rf bias and dc chucking electrodes
20090084986 - Multiple band pass filtering for pyrometry in laser based annealing systems
20090084986 - Multiple band pass filtering for pyrometry in laser based annealing systems
March 2009 - Law Office Of Robert M. Wallace patents
20090081876 - Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls
20090056629 - Cathode liner with wafer edge gas injection in a plasma reactor chamber
20090057269 - Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
February 2009 - Law Office Of Robert M. Wallace patents
20090053836 - Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation
20090044748 - System with multi-location arc threshold comparators and communication channels for carrying arc detection flags and threshold updating
20090044750 - Apparatus for wafer level arc detection at an electrostatic chuck electrode
20090045046 - Method of multi-location arc sensing with adaptive threshold comparison
20090042352 - Gate interface relaxation anneal method for wafer processing with post-implant dynamic surface annealing
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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Law Office Of Robert M. Wallace in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Law Office Of Robert M. Wallace with additional patents listed. Browse our Agent directory for other possible listings.
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