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Keiji Tatani patents

Recent patents with Keiji Tatani listed as an inventor - additional entries may be under other spellings.


Keiji Tatani - Related organizations: Sony Corporation patents

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

09/22/16 - 20160276392 - A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in
Inventors: Takuji Matsumoto, Keiji Tatani, Yasushi Tateshita, Kazuichiro Itonaga

Semiconductor device, solid-state imaging device and electronic apparatus

07/28/16 - 20160218135 - A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor
Inventors: Taku Umebayashi, Keiji Tatani, Hajime Inoue, Ryuichi Kanamura

Solid-state imaging device, production method thereof, and electronic device

07/07/16 - 20160197109 - Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel
Inventors: Keiji Tatani, Takuji Matsumoto, Yasushi Tateshita, Fumihiko Koga, Takashi Nagano, Takahiro Toyoshima, Tetsuji Yamaguchi, Keiichi Nakazawa, Naoyuki Miyashita, Yoshihiko Nagahama

Solid-state imaging device, method of manufacturing the same, and imaging apparatus

04/21/16 - 20160111459 - A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a
Inventors: Takuji Matsumoto, Keiji Tatani, Tetsuji Yamaguchi, Masashi Nakata

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

01/21/16 - 20160020236 - Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device (1) includes a silicon substrate (22), and at least a first photodiode (33) formed in the silicon substrate. The device also includes an epitaxial layer (21) with a first
Inventors: Yosuke Tanaka, Toshifumi Wakano, Keiji Tatani, Takashi Nagano, Hayato Iwamoto, Keiichi Nakazawa, Tomoyuki Hirano, Shinpei Yamaguchi, Shunsuke Maruyama

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

12/31/15 - 20150380456 - A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in
Inventors: Takuji Matsumoto, Keiji Tatani, Yasushi Tateshita, Kazuichiro Itonaga

Solid-state imaging device, method of manufacturing the same, and imaging apparatus

10/08/15 - 20150287759 - A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a
Inventors: Takuji Matsumoto, Keiji Tatani, Tetsuji Yamaguchi, Masashi Nakata

Semiconductor device, solid-state imaging device and electronic apparatus

09/24/15 - 20150270307 - A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor
Inventors: Taku Umebayashi, Keiji Tatani, Hajime Inoue, Ryuichi Kanamura

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

04/30/15 - 20150115341 - A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in
Inventors: Takuji Matsumoto, Keiji Tatani, Yasushi Tateshita, Kazuichiro Itonaga

Solid-state imaging device, production method thereof, and electronic device

11/06/14 - 20140327052 - Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel
Inventors: Keiji Tatani, Takuji Matsumoto, Yasushi Tateshita, Fumihiko Koga, Takashi Nagano, Takahiro Toyoshima, Tetsuji Yamaguchi, Keiichi Nakazawa, Naoyuki Miyashita, Yoshihiko Nagahama

Solid-state image pickup device and method for producing the same

08/21/14 - 20140231948 - A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation
Inventors: Keiji Tatani, Hideshi Abe, Masanori Ohashi, Atsushi Masagaki, Atsuhiko Yamamoto, Masakazu Furukawa

Solid-state imaging device, method of manufacturing the same, and imaging apparatus

02/20/14 - 20140051204 - A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a
Inventors: Takuji Matsumoto, Keiji Tatani, Tetsuji Yamaguchi, Masashi Nakata

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

10/31/13 - 20130285131 - A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in
Inventors: Takuji Matsumoto, Keiji Tatani, Yasushi Tateshita, Kazuichiro Itonaga

Solid-state imaging device, method of producing the same, and imaging device

05/03/12 - 20120104479 - A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of
Inventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki

Solid-state imaging device, production method thereof, and electronic device

11/03/11 - 20110269259 - A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The
Inventors: Keiji Tatani, Takuji Matsumoto, Yasushi Tateshita, Fumihiko Koga, Takashi Nagano, Takahiro Toyoshima, Tetsuji Yamaguchi, Keiichi Nakazawa, Naoyuki Miyashita, Yoshihiko Nagahama

Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera

11/03/11 - 20110267512 - A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in
Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato

Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera

10/13/11 - 20110248146 - A solid-state image pickup device including a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in
Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato

Solid-state image pickup device and method for producing the same

02/10/11 - 20110033968 - A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation
Inventors: Keiji Tatani, Hideshi Abe, Masanori Ohashi, Atsushi Masagaki, Atsuhiko Yamamoto, Masakazu Furukawa

Solid-state image pickup device and method for producing the same

02/03/11 - 20110027932 - A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation
Inventors: Keiji Tatani, Hideshi Abe, Masanori Ohashi, Atsushi Masagaki, Atsuhiko Yamamoto, Masakazu Furukawa

Solid-state imaging device and method of manufacturing the same and electronic apparatus

11/25/10 - 20100295107 - A solid-state imaging device is provided. The solid-state imaging device includes a pixel section, a peripheral circuit section, a silicide blocking layer formed in the pixel section except for part or whole of an area above an isolation portion in the pixel section, and a metal-silicided transistor formed in the
Inventors: Keiji Tatani

Solid state imaging device

08/05/10 - 20100194940 - In a solid-state imaging device, a primary-color Bayer color filter is provided on an imaging pixel area defined by pixels having different structures. Color-component filters for the same color in the color filter are disposed correspondingly to pixels having the same structure. More specifically, pixels are arranged in consideration of
Inventors: Keiji Tatani

Solid-state imaging device, method of manufacturing the same, and imaging apparatus

05/13/10 - 20100118170 - A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a
Inventors: Takuji Matsumoto, Keiji Tatani, Tetsuji Yamaguchi, Masashi Nakata

Solid-state image pickup device and method for producing the same

03/25/10 - 20100075454 - A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation
Inventors: Keiji Tatani, Hideshi Abe, Masanori Ohashi, Atsushi Masagaki, Atsuhiko Yamamoto, Masakazu Furukawa

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

02/04/10 - 20100026866 - A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of a MOS transistor
Inventors: Takuji Matsumoto, Keiji Tatani, Yasushi Tateshita, Kazuichiro Itonaga

Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera

02/04/10 - 20100025571 - A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in
Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato

Solid-state imaging device, method of producing the same, and imaging device

02/04/10 - 20100025569 - A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of
Inventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki

Solid-state imaging device and imaging apparatus

11/12/09 - 20090278031 - There is provided a solid-state imaging device, including: a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion portion, formed therein; and a laminated film formed on said semiconductor substrate; wherein said laminated film includes a hydrogen desorbing film for desorbing hydrogen, and a hydrogen blocking-off film
Inventors: Yoshiaki Kitano, Keiji Tatani, Shinya Watanabe, Kouji Yahazu, Yosuke Isoo, Masaru Suzuki

Solid-state imaging device, production method thereof, and electronic device

10/15/09 - 20090256226 - Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel
Inventors: Inventors: Keiji TataniKeiji Tatani, Keiji Tatani, Takuji Matsumoto, Yasushi Tateshita, Fumihiko Koga, Takashi Nagano, Takahiro Toyoshima, Tetsuji Yamaguchi, Keiichi Nakazawa, Naoyuki Miyashita, Yoshihiko Nagahama

Solid-state imaging device, method of manufacturing the same, and camera

06/11/09 - 20090147101 - A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and an inner-layer lens. Each of the plurality of arrayed pixels includes a photoelectric conversion portion and a pixel transistor. The optical inner filter layer is configured to block
Inventors: Keiji Tatani, John Rennie, Susumu Inoue, Atsushi Toda

Cmos solid-state imaging device and method of manufacturing the same as well as drive method of cmos solid-state imaging device

04/16/09 - 20090098679 - Adjacent pixels are separated by an element isolation portion formed of a diffusion layer and an insulating layer thereon, and the insulating layer of the element isolation portion is formed in a position equal to or shallower than the position of a pn junction on the side of an accumulation
Inventors: Hideshi Abe, Keiji Tatani, Kazuichiro Itonaga

Solid-state imaging device and method for fabricating same

04/02/09 - 20090085142 - A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region
Inventors: Keiji Tatani, Hideshi Abe, Masanori Ohashi, Atsushi Masagaki, Atsuhiko Yamamoto, Masakazu Furukawa


### Keiji Tatani patent invention listings

The bibliographic references displayed about Keiji Tatani's patents are for a recent sample of Keiji Tatani's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Keiji Tatani filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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